AMD AM29DL400BT-120EF 4 megabit (512 k x 8-bit/256 k x 16-bit) cmos 3.0 volt-only, simultaneous operation flash memory Datasheet

Am29DL400B
Data Sheet
RETIRED
PRODUCT
This product has been retired and is not recommended for designs. For new and current designs,
S29AL004D supersedes Am29DL400B and is the factory-recommended migration path. Please refer
to the S29AL004D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
April 2005
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that
originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 21606
Revision E
Amendment +4
Issue Date June 7, 2005
THIS PAGE LEFT INTENTIONALLY BLANK.
Am29DL400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
This product has been retired and is not recommended for designs. For new and current designs, S29AL004D supersedes Am29DL400B and is the factory-recommended migration path.
Please refer to the S29AL004D datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
DISTINCTIVE CHARACTERISTICS
■ Simultaneous Read/Write operations
— Host system can program or erase in one bank,
then immediately and simultaneously read
from the other bank
— Zero latency between read and write
operations
— Read-while-erase
— Read-while-program
■ Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
■ Manufactured on 0.32 µm process
technology
■ High performance
— Access times as fast as 70 ns
■ Low current consumption (typical
values at 5 MHz)
— 7 mA active read current
— 21 mA active read-while-program or readwhile-erase current
— 17 mA active program-while-erase-suspended
current
— 200 nA in standby mode
— 200 nA in automatic sleep mode
— Standard tCE chip enable access time applies to
transition from automatic sleep mode to active
mode
■ Flexible sector architecture
— Two 16 Kword, two 8 Kword, four 4 Kword, and
six 32 Kword sectors in word mode
— Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and
six 64 Kbyte sectors in byte mode
— Any combination of sectors can be erased
— Supports full chip erase
■ Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■ Sector protection
— Hardware method of locking a sector to
prevent any program or erase operation within
that sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows
code changes in previously locked sectors
■ Top or bottom boot block configurations
available
■ Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases sectors or entire chip
— Embedded Program algorithm automatically
programs and verifies data at specified address
■ Minimum 1 million program/erase cycles
guaranteed per sector
■ 20-year data retention at 125° C
— Reliable operation for the life of the system
■ Package options
— 44-pin SO
— 48-pin TSOP
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
— Superior inadvertent write protection
■ Data# Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or
erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends or resumes erasing sectors to allow
reading and programming in other sectors
— No need to suspend if sector is in the other
bank
■ Hardware reset pin (RESET#)
— Hardware method of resetting the device to
reading array data
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21606
Rev: E Amendment/+4
Issue Date: June 7, 2005
GENERAL DESCRIPTION
The Am29DL400B is an 4 Mbit, 3.0 volt-only flash
memory device, organized as 262,144 words or
524,288 bytes. The device is offered in 44-pin SO
and 48-pin TSOP packages. The word-wide (x16)
data appears on DQ0–DQ15; the byte-wide (x8)
data appears on DQ0–DQ7. This device requires only
a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM
programmer can also be used to program and erase
the device.
The standard device offers access times of 70, 80,
90, and 120 ns, allowing high-speed microprocessors
to operate without wait states. Standard control
pins—chip enable (CE#), write enable (WE#), and
output enable (OE#)—control read and write operations, and avoid bus contention issues.
The device requires only a single 3.0 volt power
supply for both read and write functions. Internally
generated and regulated voltages are provided for
the program and erase operations.
Simultaneous Read/Write Operations with
Zero Latency
The Simultaneous Read/Write architecture provides
simultaneous operation by dividing the memory
space into two banks. Bank 1 contains boot/parameter sectors, and Bank 2 consists of larger, code
sectors of uniform size. The device can improve
overall system performance by allowing a host system to program or erase in one bank, then
immediately and simultaneously read from the other
bank, with zero latency. This releases the system
from waiting for the completion of program or erase
operations.
Am29DL400B Features
The device offers complete compatibility with the
JEDEC single-power-supply Flash command set
standard. Commands are written to the command
register using standard microprocessor write timings. Register contents serve as input to an internal
state machine that controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and
erase operations. Reading data out of the device is
similar to reading from other Flash or EPROM
devices.
Device programming occurs by executing the prog ra m c o m m a n d s e q u e n c e . T h i s i n i t i a t e s t h e
Embedded Program algorithm—an internal algorithm that automatically times the program pulse
widths and verifies proper cell margin. The Unlock
Bypass mode facilitates faster programming times
2
by requiring only two write cycles to program data
instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed) before executing the erase operation.
During erase, the device automatically times the
erase pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device automatically returns to reading array data.
The sector erase architecture allows memory sectors to be erased and reprogrammed wi thout
affecting the data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware
sector protection feature disables both program
and erase operations in any combination of the sectors of memory. This can be achieved in-system or
via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data
from, or program data to, any sector within that
bank that is not selected for erasure. True background erase can thus be achieved. There is no need
to suspend the erase operation if the read data is in
the other bank.
The hardware RESET# pin terminates any operation in progress and resets the internal state
machine to reading array data. The RESET# pin may
be tied to the system reset circuitry. A system reset
would thus also reset the device to reading array
data, enabling the system microprocessor to read
the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly reduced in both these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
hi ghe st l evels of qua lity, rel iabi lity, and cost
effectiveness. The device electrically erases all bits
within a sector simultaneously via Fowler-Nordheim
tunneling. The bytes are programmed one byte or
word at a time using hot electron injection.
Am29DL400B
TABLE OF CONTENTS
Product Selector Guide ..........................................
Block Diagram.........................................................
Connection Diagrams .............................................
Connection diagramS .............................................
Pin Description........................................................
Logic Symbol ..........................................................
Ordering Information ..............................................
Device Bus Operations...........................................
4
4
5
6
7
7
8
9
RY/BY#: Ready/Busy# ............................................................ 21
DQ6: Toggle Bit I .................................................................... 22
DQ2: Toggle Bit II ................................................................... 22
Reading Toggle Bits DQ6/DQ2 ............................................... 22
Table 1. Am29DL400B Device Bus Operations ................................9
Absolute Maximum Ratings................................. 25
Word/Byte Configuration .......................................................... 9
Requirements for Reading Array Data ..................................... 9
Writing Commands/Command Sequences .............................. 9
Simultaneous Read/Write Operations with Zero
Latency ................................................................................... 10
Standby Mode ........................................................................ 10
Automatic Sleep Mode ........................................................... 10
RESET#: Hardware Reset Pin ............................................... 10
Output Disable Mode .............................................................. 11
Figure 7. Maximum Negative Overshoot Waveform ..................... 25
Figure 8. Maximum Positive Overshoot Waveform....................... 25
Table 2. Am29DL400BT Top Boot Sector
Architecture .....................................................................................11
Table 3. Am29DL400BB Bottom Boot Sector
Architecture .....................................................................................12
Autoselect Mode ..................................................................... 12
Table 4. Am29DL400B Autoselect Codes (High Voltage Method) ..13
Sector Protection/Unprotection ............................................... 13
Temporary Sector Unprotect .................................................. 13
Figure 1. Temporary Sector Unprotect Operation........................... 13
Figure 2. In-System Sector Protect/Unprotect
Algorithms ....................................................................................... 14
Hardware Data Protection ...................................................... 15
Low VCC Write Inhibit ............................................................ 15
Write Pulse “Glitch” Protection ............................................... 15
Logical Inhibit .......................................................................... 15
Power-Up Write Inhibit ............................................................ 15
Command Definitions ........................................... 15
Reading Array Data ................................................................ 15
Reset Command ..................................................................... 15
Autoselect Command Sequence ............................................ 15
Byte/Word Program Command Sequence ............................. 16
Unlock Bypass Command Sequence ..................................... 16
Figure 3. Program Operation .......................................................... 17
Chip Erase Command Sequence ........................................... 17
Sector Erase Command Sequence ........................................ 17
Erase Suspend/Erase Resume Commands ........................... 18
Figure 4. Erase Operation............................................................... 19
Command Definitions ........................................... 20
Table 5. Am29DL400B Command Definitions ................................20
Write Operation Status ......................................... 21
DQ7: Data# Polling ................................................................. 21
Figure 5. Data# Polling Algorithm ................................................... 21
Figure 6. Toggle Bit Algorithm........................................................ 23
DQ5: Exceeded Timing Limits ................................................ 23
DQ3: Sector Erase Timer ....................................................... 23
Table 6. Write Operation Status ..................................................... 24
Operating Ranges ................................................. 26
DC Characteristics................................................ 27
CMOS Compatible .................................................................. 27
Figure 9. ICC1 Current vs. Time (Showing Active
and Automatic Sleep Currents) ...................................................... 28
Figure 10. Typical ICC1 vs. Frequency ........................................... 28
Test Conditions..................................................... 29
Figure 11. Test Setup.................................................................... 29
Table 7. Test Specifications ........................................................... 29
Key to Switching Waveforms .................................................. 29
Figure 12. Input Waveforms and Measurement
Levels............................................................................................. 29
AC Characteristics................................................ 30
Read-Only Operations ........................................................... 30
Figure 13. Read Operation Timings ...............................................
Figure 14. Reset Timings ...............................................................
Figure 15. BYTE# Timings for Read Operations............................
Figure 16. BYTE# Timings for Write Operations............................
Figure 17. Program Operation Timings..........................................
Figure 18. Chip/Sector Erase Operation Timings ..........................
Figure 19. Back-to-Back Read/Write Cycle Timings ......................
Figure 20. Data# Polling Timings (During Embedded Algorithms).
Figure 21. Toggle Bit Timings (During Embedded Algorithms)......
Figure 22. DQ2 vs. DQ6.................................................................
Figure 23. Temporary Sector Unprotect Timing
Diagram..........................................................................................
Figure 24. Sector Protect/Unprotect Timing
Diagram..........................................................................................
30
31
32
32
34
34
35
35
36
36
37
38
Alternate CE# Controlled Erase/Program
Operations .............................................................................. 39
Figure 25. Alternate CE# Controlled Erase/Program
Operation Timings.......................................................................... 40
Erase and Programming Performance ............... 41
Latchup Characteristics ....................................... 42
TSOP and SO Pin Capacitance............................ 42
Data Retention....................................................... 42
Physical Dimensions*........................................... 43
TS 048—48-Pin Standard TSOP ............................................ 43
TSR048—48-Pin Reverse TSOP ........................................... 44
SO 044—44-Pin Small Outline ............................................... 45
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 46
Am29DL400B
3
PRODUCT SELECTOR GUIDE
Family Part Number
Am29DL400B
Speed Options (Full Voltage Range: VCC = 2.7 – 3.6 V)
-70
-80
-90
-120
Max Access Time (ns)
70
80
90
120
CE# Access (ns)
70
80
90
120
OE# Access (ns)
30
30
35
50
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
RY/BY#
X-Decoder
A0–A17
RESET#
WE#
CE#
BYTE#
Upper Bank
DQ0–DQ15
A0–A17
Y-Decoder
Upper Bank Address
A0–A17
Latches and Control Logic
OE# BYTE#
VCC
VSS
STATE
CONTROL
&
COMMAND
REGISTER
Status
DQ0–DQ15
Control
Lower Bank Address
Lower Bank
Latches and
Control Logic
A0–A17
Y-Decoder
A0–A17
X-Decoder
OE# BYTE#
4
Am29DL400B
DQ0–DQ15
DQ0–DQ15
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
NC
A17
A7
A6
A5
A4
A3
A2
A1
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard TSOP
Reverse TSOP
Am29DL400B
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
NC
A17
A7
A6
A5
A4
A3
A2
A1
5
CONNECTION DIAGRAMSPIN DESCRIPTION
RY/BY#
NC
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
SO
RESET#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
PIN DESCRIPTION
A0-A17
= 18 Addresses
DQ0-DQ14 = 15 Data Inputs/Outputs
DQ15/A-1 = DQ15 (Data Input/Output, word mode),
A-1 (LSB Address Input, byte mode)
CE#
= Chip Enable
OE#
= Output Enable
WE#
= Write Enable
BYTE#
= Selects 8-bit or 16-bit mode
RESET#
= Hardware Reset Pin, Active Low
RY/BY#
= Ready/Busy Output
VCC
= 3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
VSS
NC
6
LOGIC SYMBOL
18
= Device Ground
= Pin Not Connected Internally
Am29DL400B
A0–A17
16 or 8
DQ0–DQ15
(A-1)
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following:
Am29DL400B
T
70
E
I
TEMPERATURE RANGE
C
= Commercial (0°C to +70°C)
I
= Industrial (–40°C to +85°C)
E
= Extended (–55°C to +125°C)
D
= Commercial (0°C to +70°C) for Pb-free Package
F
= Industrial (-40°C to +85°C) for Pb-free Package
K
= Extended (-55°C to +125°C) for Pb-free Package
PACKAGE TYPE
E
= 48-Pin Thin Small Outline Package
(TSOP) Standard Pinout (TS 048)
F
= 48-Pin Thin Small Outline Package (TSOP)
Reverse Pinout (TSR048)
S
= 44-Pin Small Outline Package (SO 044)
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
=
Top sector
B
=
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29DL400B
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program, and Erase
Valid Combinations
Valid Combinations
AM29DL400BT-70
AM29DL400BB-70
EC, EI, FC, FI, ED, EF
SC, SI, SD, SF
AM29DL400BT-80
AM29DL400BB-80
AM29DL400BT-90
AM29DL400BB-90
Valid Combinations list configurations planned to be
supported in volume for this device. Consult the local
AMD sales office to confirm availability of specific
valid combinations to check on newly released combinations.
EC, EI, EE, ED, EF, EK
FC, FI, FE,
SC, SI, SE, SD, SF, SK
AM29DL400BT-120
AM29DL400BB-120
Am29DL400B
7
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated
through the internal command register. The command register itself does not occupy any addressable
memory location. The register is a latch used to
store the commands, along with the address and
data information needed to execute the command.
Table 1.
The contents of the register serve as inputs to the internal state machine. The state machine outputs
dictate the function of the device. Table 1 lists the
device bus operations, the inputs and control levels
they require, and the resulting output. The following
subsections describe each of these operations in further detail.
Am29DL400B Device Bus Operations
DQ8–DQ15
Operation
CE#
OE#
WE
#
RESET#
Addresses
(Note 1)
DQ0–
DQ7
BYTE#
= VIH
BYTE#
= VIL
Read
L
L
H
H
AIN
DOUT
DOUT
Write
L
H
L
H
AIN
DIN
DIN
DQ8–DQ14 = High-Z,
DQ15 = A-1
VCC ±
0.3 V
X
X
VCC ±
0.3 V
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
High-Z
High-Z
High-Z
Sector Protect (Note 2)
L
H
L
VID
Sector Address,
A6 = L, A1 = H,
A0 = L
DIN
X
X
Sector Unprotect (Note 2)
L
H
L
VID
Sector Address,
A6 = H, A1 = H,
A0 = L
DIN
X
X
Temporary Sector Unprotect
X
X
X
VID
AIN
DIN
DIN
High-Z
Standby
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A17:A0 in word mode (BYTE# = VIH), A17:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector Protection/Unprotection” section.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins operate in the byte or word configuration. If the
BYTE# pin is set at logic ‘1’, the device is in word
configuration, DQ0-15 are active and controlled by
CE# and OE# .
If the BYTE# pin is set at logic ‘0’, the device is in
byte configuration, and only data I/O pins DQ0–DQ7
are active and controlled by CE# and OE#. The data
I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin
is used as an input for the LSB (A-1) address
function.
Requirements for Reading Array Data
To read array data from the outputs, the system
must drive the CE# and OE# pins to VIL. CE# is the
power control and selects the device. OE# is the output control and gates array data to the output pins.
WE# should remain at VIH . The BYTE# pin determines whether the device outputs array data in
words or bytes.
The internal state machine is set for reading array
data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the
8
memory content occurs during the power transition.
No command is necessary in this mode to obtain
array data. Standard microprocessor read cycles that
assert valid addresses on the device address inputs
produce valid data on the device data outputs. Each
bank remains enabled for read access until the command register contents are altered.
See “Reading Array Data” for more information.
Refer to the AC Read-Only Operations table for timing specifications and to Figure 13 for the timing
diagram. ICC1 in the DC Characteristics table represents the active current specification for reading
array data.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines
whether the device accepts program data in bytes or
words. Refer to “Word/Byte Configuration” for more
information.
Am29DL400B
The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four.
The “Byte/Word Program Command Sequence” section has details on programming data to the device
using both standard and Unlock Bypass command
sequences.
An erase operation can erase one sector, multiple
sectors, or the entire device. Tables 2 and 3 indicate
the address space that each sector occupies. The device address space is divided into two banks: Bank 1
contains the boot/parameter sectors, and Bank 2
contains the larger, code sectors of uniform size. A
“bank address” is the address bits required to
uniquely select a bank. Similarly, a “sector address”
is the address bits required to uniquely select a
sector.
If the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory
array) on DQ7–DQ0. Standard read cycle timings
apply in this mode. Refer to the Autoselect Mode and
Autoselect Command Sequence sections for more
information.
ICC2 in the DC Characteristics table represents the
active current specification for the write mode. The
AC Characteristics section contains timing specification tables and timing diagrams for write operations.
Simultaneous Read/Write Operations with
Zero Latency
This device is capable of reading data from one bank
of memory while programming or erasing in the
other bank of memory. An erase operation may also
be suspended to read from or program to another location within the same bank (except the sector being
erased). Figure 19 shows how read and write cycles
may be initiated for simultaneous operation with
zero latency. ICC6 and ICC7 in the DC Characteristics
table represent the current specifications for readwhile-program and read-while-erase, respectively.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range
than VIH.) If CE# and RESET# are held at VIH, but
not within V CC ± 0.3 V, the device will be in the
standby mode, but the standby current will be
greater. The device requires standard access time
(tCE) for read access when the device is in either of
these standby modes, before it is ready to read data.
The device also enters the standby mode when the
RESET# pin is driven low. Refer to the next section,
“RESET#: Hardware Reset Pin”.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
ICC3 in the DC Characteristics table represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically enables this mode when addresses remain stable for
tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals.
Standard address access timings provide new data
when addresses are changed. While in sleep mode,
output data is latched and always available to the
system. ICC4 in the DC Characteristics table represents the automatic sleep mode current
specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the
RESET# pin is driven low for at least a period of tRP,
the device immediately terminates any operation
in progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET# pulse. The device also resets the internal state
machine to reading array data. The operation that
was interrupted should be reinitiated once the device
is ready to accept another command sequence, to
ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4 ). If RESET# is
held at V IL but not within VSS ±0.3 V, the standby
current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the
Flash memory, enabling the system to read the
boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until
the internal reset operation is complete, which requires a time of tREADY (during Embedded
Algorithms). The system can thus monitor RY/BY# to
determine whether the reset operation is complete.
If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the
reset operation is completed within a time of tREADY
(not during Embedded Algorithms). The system can
read data tRH after the RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET#
parameters and to Figure 14 for the timing diagram.
Am29DL400B
9
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the
high impedance state.
Table 2.
Am29DL400BT Top Boot Sector Architecture
Sector Address
Bank
Address
Bank
Bank 2
Bank 1
Sector
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
SA0
0
0
0
X
X
X
64/32
00000h–0FFFFh
00000h–07FFFh
SA1
0
0
1
X
X
X
64/32
10000h–1FFFFh
08000h–0FFFFh
SA2
0
1
0
X
X
X
64/32
20000h–2FFFFh
10000h–17FFFh
SA3
0
1
1
X
X
X
64/32
30000h–3FFFFh
18000h–1FFFFh
SA4
1
0
0
X
X
X
64/32
40000h–4FFFFh
20000h–27FFFh
SA5
1
0
1
X
X
X
64/32
50000h–5FFFFh
28000h–2FFFFh
SA6
1
1
0
0
0
X
16/8
60000h–63FFFh
30000h–31FFFh
SA7
1
1
0
0
1
X
1
0
X
32/16
64000h–6BFFFh
32000h–35FFFh
SA8
1
1
0
1
1
0
8/4
6C000h–6DFFFh
36000h–36FFFh
SA9
1
1
0
1
1
1
8/4
6E000h–6FFFFh
37000h–37FFFh
SA10
1
1
1
0
0
0
8/4
70000h–71FFFh
38000h–38FFFh
SA11
1
1
1
0
0
1
8/4
72000h–73FFFh
39000h–39FFFh
SA12
1
1
1
0
1
X
1
0
X
32/16
74000h–7BFFFh
3A000h–3DFFFh
SA13
1
1
1
1
1
X
16/8
7C000h–7FFFFh
3E000h–3FFFFh
(x8)
Address Range
(x16)
Address Range
Note: The address range is A17:A-1 if in byte mode (BYTE# = VIL). The address range is A17:A0 if in word mode (BYTE# =
VIH).
10
Am29DL400B
Table 3. Am29DL400BB Bottom Boot Sector Architecture
Sector Address
Bank
Address
Bank
Bank 2
Bank 1
Sector
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/Kwords)
(x8)
Address Range
(x16)
Address Range
SA13
1
1
1
X
X
X
64/32
70000h–7FFFFh
38000h–3FFFFh
SA12
1
1
0
X
X
X
64/32
60000h–6FFFFh
30000h–37FFFh
SA11
1
0
1
X
X
X
64/32
50000h–5FFFFh
28000h–2FFFFh
SA10
1
0
0
X
X
X
64/32
40000h–4FFFFh
20000h–27FFFh
SA9
0
1
1
X
X
X
64/32
30000h–3FFFFh
18000h–1FFFFh
SA8
0
1
0
X
X
X
64/32
20000h–2FFFFh
10000h–17FFFh
SA7
0
0
1
1
1
X
16/8
1C000h–1FFFFh
0E000h–0FFFFh
SA6
0
0
1
1
0
X
0
1
X
32/16
14000h–1BFFFh
0A000h–0DFFFh
SA5
0
0
1
0
0
1
8/4
12000h–13FFFh
09000h–09FFFh
SA4
0
0
1
0
0
0
8/4
10000h–11FFFh
08000h–08FFFh
SA3
0
0
0
1
1
1
8/4
0E000h–0FFFFh
07000h–07FFFh
SA2
0
0
0
1
1
0
8/4
0C000h–0DFFFh
06000h–06FFFh
SA1
0
0
0
1
0
X
0
1
X
32/16
04000h–0BFFFh
02000h–05FFFh
SA0
0
0
0
0
0
X
16/8
00000h–03FFFh
00000h–01FFFh
Note: The address range is A17:A-1 if in byte mode (BYTE# = VIL). The address range is A17:A0 if in word mode (BYTE# =
VIH).
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipm e nt to a u t o m a t i ca l l y m a t c h a d e v i ce t o b e
programmed with its corresponding programming algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown
in Table 4. In addition, when verifying sector protec-
tio n, the sec tor add re ss mu st app ear on the
appropriate highest order address bits (see Tables 2
and 3). Table 4 shows the remaining address bits
that are don’t care. When all necessary bits have
been set as required, the programming equipment
may then read the corresponding identifier code on
DQ7-DQ0.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 5. This method
does not require VID. Refer to the Autoselect Command Sequence section for more information.
Am29DL400B
11
Table 4.
Description
Mode
Manufacturer ID: AMD
Am29DL400B Autoselect Codes (High Voltage Method)
A17 A11
to
to
WE# A12 A10
CE#
OE#
L
L
H
L
L
H
Device ID:
Am29DL400B
(Top Boot Block)
Word
Byte
L
L
H
Device ID:
Am29DL400B
(Bottom Boot Block)
Word
L
L
H
Byte
Sector Protection Verification
L
L
L
L
H
H
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ8
to
DQ15
DQ7
to
DQ0
X
01h
22h
0C
X
0C
22h
0F
X
0F
X
01h
(protected)
X
00h
(unprotected
)
BA
X
VID
X
L
X
L
L
BA
X
VID
X
L
X
L
H
BA
X
VID
X
L
X
L
H
SA
X
VID
X
L
X
H
L
Note: L = Logic Low = VIL, H = Logic High = VIH, BA = Bank
Address, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
program and erase operations in any sector. The
hardware sector unprotection feature re-enables
both program and erase operations in previously
protected sectors. Sector protection/unprotection
can be implemented via two methods.
mode, formerly protected sectors can be programmed or erased by selecting the sector
addresses. Once VID is removed from the RESET#
pi n , a l l the p re v i ou sl y p r ot e cte d se c tor s a re
protected again. Figure 1 shows the algorithm, and
Figure 23 shows the timing diagrams, for this
feature.
The primary method requires VID on the RESET# pin
only, and can be implemented either in-system or via
programming equipment. Figure 2 shows the algorithms and Figure 24 shows the timing diagram. This
method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors
must first be protected prior to the first sector unprotect write cycle.
START
RESET# = VID
(Note 1)
The alternate method intended only for programming equipment requires VID on address pin A9 and
OE#. This method is compatible with programmer
routines written for earlier 3.0 volt-only AMD flash
devices. Publication number 22145 contains further
details; contact an AMD representative to request a
copy.
Perform Erase or
Program Operations
RESET# = VIH
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See the Autoselect Mode
section for details.
Temporary Sector Unprotect
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once again.
This feature allows temporary unprotection of previously protected sectors to change data in-system.
The Sector Unprotect mode is activated by setting
the RESET# pin to VID (11.5 V – 12.5 V). During this
12
Am29DL400B
Figure 1.
Temporary Sector Unprotect
Operation
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 μs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 μs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Wait 15 ms
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
PLSCNT
= 1000?
Protect another
sector?
No
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Protect
Algorithm
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Sector Protect
complete
Set up
next sector
address
No
Data = 00h?
Yes
Last sector
verified?
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 2.
In-System Sector Protect/Unprotect Algorithms
Am29DL400B
13
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data
protection against inadvertent writes (refer to Table
5 for command definitions). In addition, the following hardware data protection measures prevent
accidental erasure or programming, which might
otherwise be caused by spurious system level signals
during VCC power-up and power-down transitions, or
from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than
VLKO. The system must provide the proper signals to
the control pins to prevent unintentional writes when
VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE#
= VIL, CE# = V IH or WE# = VIH. To initiate a write
cycle, CE# and WE# must be a logical zero while
OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = V IL and OE# = VIH during power
up, the device does not accept commands on the rising edge of WE#. The internal state machine is
auto mat icall y r ese t to re ading arra y d ata on
power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device
operations. Table 5 defines the valid register command sequences. Writing incorrect address and
data values or writing them in the improper sequence resets the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched
on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams
in the AC Characteristics section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. Each bank is ready to read array data
after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the corresponding bank enters the erasesuspend-read mode, after which the system can
read data from any non-erase-suspended sector
within the same bank. After completing a programming operation in the Erase Suspend mode, the
system may once again read array data with the
same exception. See the Erase Suspend/Erase Resume Commands section for more information.
The system must issue the reset command to return
a bank to the read (or erase-suspend-read) mode if
DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See
t he ne x t s ec ti o n, Res e t C o mm a n d, fo r m o re
information.
See also Requirements for Reading Array Data in the
Device Bus Operations section for more information.
The “Read-Only Operations” table provides the read
pa rame te rs, and Fig ur e 13 shows the ti ming
diagram.
14
Reset Command
Writing the reset command resets the banks to the
read or erase-suspend-read mode. Address bits are
don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the bank to which the
system was writing to reading array data. Once erasure begins, however, the device ignores reset
commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence
before programming begins. This resets the bank to
which the system was writing to the reading array
data. If the program command sequence is written
to a bank that is in the Erase Suspend mode, writing
the reset command returns that bank to the erasesuspend-read mode. Once programming begins,
however, the device ignores reset commands until
the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to reading array data. If a
bank entered the autoselect mode while in the Erase
Suspend mode, writing the reset command returns
that bank to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to
reading array data (or erase-suspend-read mode if
that bank was in Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices
codes, and determine whether or not a sector is prote c te d . Ta b l e 5 s ho w s th e a d d r es s a n d d a ta
Am29DL400B
requirements. This method is an alternative to that
shown in Table 4, which is intended for PROM programmers and requires VID on address pin A9. The
autoselect command sequence may be written to an
address within a bank that is either in the read or
erase-suspend-read mode. The autoselect command may not be written while the device is actively
programming or erasing in the other bank.
The autoselect command sequence is initiated by
first writing two unlock cycles. This is followed by a
third write cycle that contains the bank address and
the autoselect command. The addressed bank then
enters the autoselect mode. The system may read at
any address within the same bank any number of
times without initiating another autoselect command
sequence:
■ A read cycle at address (BA)XX00h (where BA is
the bank address) returns the manufacturer code.
■ A read cycle at address (BA)XX01h in word mode
(or (BA)XX02h in byte mode) returns the device
code.
■ A read cycle to an address containing a sector address (SA) within the same bank, and the address
02h on A7–A0 in word mode (or the address 04h
on A6–A-1 in byte mode) returns 01h if the sector
is protected, or 00h if it is unprotected. Refer to
Tables 2 and 3 for valid sector addresses.
The system may continue to read array data from
the other bank while a bank is in the autoselect
mode. To exit the autoselect mode, the system must
write the reset command to return both banks to
reading array data. If a bank enters the autoselect
mode while erase suspended, a reset command returns that bank to the erase-suspend-read mode. A
subsequent Erase Resume command returns the
bank to the erase operation.
Byte/Word Program Command Sequence
The system may program the device by word or
byte, depending on the state of the BYTE# pin. Prog ram ming is a four-bus-cycle op eration. The
program command sequence is initiated by writing
two unlock write cycles, followed by the program
set-up command. The program address and data are
written next, which in turn initiate the Embedded
Program algorithm. The system is not required to
provide further controls or timings. The device automatically generates the program pulses and verifies
the programmed cell margin. Table 5 shows the address and data requirements for the byte program
command sequence.
When the Embedded Program algorithm is complete,
that bank then returns to reading array data and ad-
dresses are no longer latched. The system can
determine the status of the program operation by
using DQ7, DQ6, or RY/BY#. Note that while the Embedded Program operation is in progress, the system
can read data from the non-programming bank.
Refer to the Write Operation Status section for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the program operation. The program command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from “0” back to a “1.” Attempting to do so may
cause that bank to set DQ5 = 1, or cause the DQ7
and DQ6 status bits to indicate the operation was
successful. However, a succeeding read will show
that the data is still “0.” Only erase operations can
convert a “0” to a “1.”
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to a bank faster than using the
standard program command sequence. The unlock
bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third
write cycle containing the unlock bypass command,
20h. That bank then enters the unlock bypass mode.
A two-cycle unlock bypass program command sequence is all that is required to program in this
mode. The first cycle in this sequence contains the
unlock bypass program command, A0h; the second
cycle contains the program address and data. Additional data is programmed in the same manner. This
mode dispenses with the initial two unlock cycles required in the standard program command sequence,
resulting in faster total programming time. Table 5
shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset
command sequence. The first cycle must contain the
bank address and the data 90h. The second cycle
need only contain the data 00h. The bank then returns to reading array data.
Figure 3 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations
table in the AC Characteristics section for parameters, and Figure 17 for timing diagrams.
Am29DL400B
15
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations
tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams.
START
Write Program
Command Sequence
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock cycles are written, and are then followed by the address of the sector to be erased, and
the sector erase command. Table 5 shows the address and data requirements for the sector erase
command sequence.
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
3. Note: See Table 5 for program command sequence.
Figure 3. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by
the chip erase command, which in turn invokes the
Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero
data pattern prior to electrical erase. The system is
not required to provide any controls or timings during these operations. Table 5 shows the address and
data requirements for the chip erase command
sequence.
When the Embedded Erase algorithm is complete,
that bank returns to reading array data and addresses are no longer latched. The system can
determine the status of the erase operation by using
DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write Operation Status section for information on these status
bits.
The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm
automatically programs and verifies the entire memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any
controls or timings during these operations.
After the command sequence is written, a sector
erase time-out of 50 µs occurs. During the time-out
period, additional sector addresses and sector erase
commands may be written. Loading the sector erase
buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors.
The time between these additional cycles must be
less than 50 µs, otherwise the last address and command may not be accepted, and erasure may begin.
It is recommended that processor interrupts be disabled during this time to ensure all commands are
accepted. The interrupts can be re-enabled after the
last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend
during the time-out period resets that bank to
reading array data. The system must rewrite the
command sequence and any additional addresses
and commands.
The system can monitor DQ3 (in the erasing bank)
to determine if the sector erase timer has timed out
(See the section on DQ3: Sector Erase Timer.). The
time-out begins from the rising edge of the final
WE# pulse in the command sequence.
When the Embedded Erase algorithm is complete,
the bank returns to reading array data and addresses are no longer latched. Note that while the
Embedded Erase operation is in progress, the system
can read data from the non-erasing bank. The system can determine the status of the erase operation
by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing
bank. Refer to the Write Operation Status section for
information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the chip erase command sequence
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands are ignored. However, note that a hardware
reset immediately terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once that bank has returned to
reading array data, to ensure data integrity.
16
Am29DL400B
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations
tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams.
In the erase-suspend-read mode, the system can
also issue the autoselect command sequence. Refer
to the Autoselect Mode and Autoselect Command Sequence sections for details.
Erase Suspend/Erase Resume Commands
To resume the sector erase operation, the system
must write the Erase Resume command. The bank
address of the erase-suspended bank is required
when writing this command. Further writes of the
Resume command are ignored. Another Erase Suspend command can be written after the chip has
resumed erasing.
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then
read data from, or program data to, any sector not
selected for erasure. The bank address is required
when writing this command. This command is valid
only during the sector erase operation, including the
50 µs time-out period during the sector erase command sequence. The Erase Suspend command is
ignored if written during the chip erase operation or
Embedded Program algorithm.
START
When the Erase Suspend command is written during
the sector erase operation, the device requires a
maximum of 20 µs to suspend the erase operation.
However, when the Erase Suspend command is written during the sector erase time-out, the device
immediately terminates the time-out period and suspends the erase operation.
After the erase operation has been suspended, the
bank enters the erase-suspend-read mode. The system can read data from or program data to any
sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Reading
at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erasesuspended. Refer to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard Byte Program operation.
Refer to the Write Operation Status section for more
information.
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 5 for erase command sequence.
2. See the section on DQ3 for information on the sector erase timer.
Figure 4.
Erase Operation
Am29DL400B
17
COMMAND DEFINITIONS
Cycles
Table 5.
Command
Sequence
(Note 1)
Read (Note 6)
Reset (Note 7)
Autoselect (Note 8)
Manufacturer ID
Word
Byte
Device ID,
Top Boot Block
Word
Device ID,
Bottom Boot Block
Word
Sector Protect Verify
(Note 9)
Program
Unlock Bypass
Byte
Byte
Am29DL400B Command Definitions
Bus Cycles (Notes 2–5)
First
Second
Addr Data Addr Data
1
RA
RD
1
XXX
F0
4
4
4
Word
555
AAA
555
AAA
555
AAA
AA
AA
AA
555
4
2AA
555
2AA
555
2AA
555
55
55
55
2AA
AA
(BA)555
(BA)AAA
(BA)555
(BA)AAA
AAA
555
(BA)AAA
Word
555
2AA
555
Word
Byte
4
3
AAA
555
AAA
AA
AA
555
2AA
555
55
55
2
XXX
A0
PA
PD
2
BA
90
XXX
00
Word
Byte
Word
Byte
6
6
555
AAA
555
AAA
AA
AA
Erase Suspend (Note 12)
1
BA
B0
Erase Resume (Note 13)
1
BA
30
2AA
555
2AA
555
55
55
AAA
555
AAA
555
AAA
555
AAA
Fifth
Addr
Data
90
(BA)X00
01
(BA)X01
220C
90
90
90
Byte
Byte
Fourth
Data
(BA)555
Unlock Bypass Reset (Note 11)
Sector Erase
(BA)555
(BA)AAA
55
Unlock Bypass Program (Note 10)
Chip Erase
Third
Addr
A0
(BA)X02
0C
(BA)X01
220F
(BA)X02
0F
(SA)
X02
XX00
(SA)
X04
00
PA
PD
Sixth
Addr Data
Addr
Data
XX01
01
20
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A17–A12 uniquely select any sector.
BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. Address bits A17–
A16 select a bank.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus
cycles are write operations.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles in word mode.
5. Address bits A17–A11 are don’t cares for unlock and
command cycles, unless bank address (BA) is required.
6. No unlock or command cycles required when bank is in
read mode.
7. The Reset command is required to return to reading
array data (or to the erase-suspend-read mode if
previously in Erase Suspend) when a bank is in the
autoselect mode, or if DQ5 is goes high (while the bank
is providing status information).
8. The fourth cycle of the autoselect command sequence is
a read cycle. The system must provide the bank address
to obtain the manufacturer or device ID information.
9. The data is 00h for an unprotected sector and 01h for a
protected sector. See the Autoselect Command
Sequence section for more information.
10. The Unlock Bypass command is required prior to the
Unlock Bypass Program command.
11. The Unlock Bypass Reset command is required to return
to reading array data when the bank is in the unlock
bypass mode.
12. The system may read and program in non-erasing
sectors, or enter the autoselect mode, when in the Erase
Suspend mode. The Erase Suspend command is valid
only during a sector erase operation, and requires the
bank address.
13. The Erase Resume command is valid only during the Erase
Suspend mode, and requires the bank address.
18
Am29DL400B
WRITE OPERATION STATUS
The device provides several bits to determine the
status of a write operation in the bank where a program or erase operation is in progress: DQ2, DQ3,
DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections describe the function of these
bits. DQ7, RY/BY#, and DQ6 each offer a method for
determining whether a program or erase operation is
complete or in progress. These three bits are discussed first.
20 in the AC Characteristics section shows the Data#
Polling timing diagram.
START
DQ7: Data# Polling
Read DQ7–DQ0
Addr = VA
The Data# Polling bit, DQ7, indicates to the host system whether a n E mbed ded Prog ram or E rase
algorithm is in progress or completed, or whether a
bank is in Erase Suspend. Data# Polling is valid after
the rising edge of the final WE# pulse in the command sequence.
DQ7 = Data?
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status information on DQ7. If a program address falls
within a protected sector, Data# Polling on DQ7 is
active for approximately 1 µs, then that bank returns
to reading array data.
No
No
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change
asynchronously with DQ0–DQ6 while Output Enable
(OE#) is asserted low. That is, the device may
change from providing status information to valid
data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid
data. Even if the device has completed the program
or erase operation and DQ7 has valid data, the data
outputs on DQ0–DQ6 may be still invalid. Valid data
on DQ0–DQ7 will appear on successive read cycles.
Table 6 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm. Figure
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the bank enters the
Erase Suspend mode, Data# Polling produces a “1”
on DQ7. The system must provide an address within
any of the sectors selected for erasure to read valid
status information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is active for approximately 100 µs,
then the bank returns to reading array data. If not all
selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
However, if the system reads DQ7 at an address
within a protected sector, the status may not be
valid.
Yes
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is any sector address
within the sector being erased. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7
may change simultaneously with DQ5.
Figure 5. Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin
that indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid
after the rising edge of the final WE# pulse in the
command sequence. Since RY/BY# is an open-drain
output, several RY/BY# pins can be tied together in
parallel with a pull-up resistor to VCC.
Am29DL400B
19
If the output is low (Busy), the device is actively
erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is
high (Ready), the device is ready to read array data,
is in the standby mode, or one of the banks is in the
erase-suspend-read mode.
Table 6 shows the outputs for RY/BY#.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Em bedde d Era se a lg orithm is i n
progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of
the final WE# pulse in the command sequence.
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address within the programming or erasing bank, and
is valid after the rising edge of the final WE# pulse in
the command sequence (prior to the program or
erase operation), and during the sector erase timeout.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erasesuspended. DQ6, by comparison, indicates whether
the device is actively erasing, or is in Erase Suspend,
but cannot distinguish which sectors are selected for
erasure. Thus, both status bits are required for sector and mode information. Refer to Table 6 to
compare outputs for DQ2 and DQ6.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address within
the programming or erasing bank cause DQ6 to toggle. The system may use either OE# or CE# to
control the read cycles. When the operation is complete, DQ6 stops toggling.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains
the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 21 shows the toggle bit timing diagram.
Figure 22 shows the differences between DQ2 and
DQ6 in graphical form.
DQ6: Toggle Bit I
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to
reading array data. If not all selected sectors are
protected, the Embedded Erase algorithm erases the
unprotected sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When a bank is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6
toggles. When that bank enters the Erase Suspend
mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7:
Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to
reading array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 6 shows the outputs for Toggle Bit I on DQ6.
Figure 6 shows the toggle bit algorithm. Figure 21 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
20
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typically, the system would note and store the value of
the toggle bit after the first read. After the second
read, the system would compare the new value of
the toggle bit with the first. If the toggle bit is not
toggling, the device has completed the program or
erase operation. The system can read array data on
DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle bit is still toggling,
the system also should note whether the value of
DQ5 is high (see the section on DQ5). If it is, the
system should then determine again whether the
toggle bit is toggling, since the toggle bit may have
stopped toggling just as DQ5 went high. If the toggle
bit is no longer toggling, the device has successfully
completed the program or erase operation. If it is
still toggling, the device did not completed the operation successfully, and the system must write the
reset command to return to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5
has not gone high. The system may continue to
monitor the toggle bit and DQ5 through successive
read cycles, determining the status as described in
the previous paragraph. Alternatively, it may choose
to perform other system tasks. In this case, the system must start at the beginning of the algorithm
when it returns to determine the status of the operation (top of Figure 6).
Am29DL400B
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time
has exceeded a specified internal pulse count limit.
Under these conditions DQ5 produces a “1,” indicatin g t ha t t he pr o gra m o r e ra se cycl e wa s no t
successfully completed.
START
Read DQ7–DQ0
The device may output a “1” on DQ5 if the system
tries to program a “1” to a location that was previously programmed to “0.” Only an erase operation
can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the
timing limit has been exceeded, DQ5 produces a “1”.
Read DQ7–DQ0
Toggle Bit
= Toggle?
Under both these conditions, the system must write
the reset command to return to reading array data
(or to the erase-suspend-read mode if a bank was
previously in the erase-suspend-program mode).
No
DQ3: Sector Erase Timer
Yes
No
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not
erasure has begun. (The sector erase timer does not
apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also
applies after each additional sector erase command.
When the time-out period is complete, DQ3 switches
from a “0” to a “1”. If the system can guarantee the
time between additional sector erase commands to
be less than 50 µs, it need not monitor DQ3. See
also the Sector Erase Command Sequence section.
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Note: The system should recheck the toggle bit even if DQ5
= “1” because the toggle bit may stop toggling as DQ5
changes to “1.” See the subsections on DQ6 and DQ2 for
more information.
Figure 6.
Toggle Bit Algorithm
After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or
DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3.
If DQ3 is “1”, the Embedded Erase algorithm has begun; all further commands (except Erase Suspend)
are ignored until the erase operation is complete. If
DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status of DQ3 prior to and following each subsequent
sector erase command. If DQ3 is high on the second
status check, the last command might not have been
accepted.
Table 6 shows the status of DQ3 relative to the other
status bits.
Am29DL400B
21
Table 6.
Write Operation Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
DQ7#
Toggle
0
N/A
No toggle
0
0
Toggle
0
1
Toggle
0
Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
DQ7#
Toggle
0
N/A
N/A
0
Status
Standard
Mode
Embedded Program Algorithm
Erase
Suspend
Mode
Erase-SuspendRead
Embedded Erase Algorithm
Erase-Suspend-Program
RY/BY#
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading
status information. Refer to the appropriate subsection
for further details.
3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in
progress. The device outputs array data if the system addresses a non-busy bank.
22
Am29DL400B
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . .–65°C to +150°C
A9, OE#,
and RESET# (Note 2). . . . . . . –0.5 V to +12.5 V
Ambient Temperature
with Power Applied . . . . . . . . . . . .–65°C to +125°C
All other pins
(Note 1) . . . . . . . . . . . . . . –0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3) . . . . . 200 mA
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . .–0.5 V to +4.0 V
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
undershoot VSS to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is VCC +0.5 V.
See Figure 7. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to 20
ns. See Figure 8.
2. Minimum DC input voltage on pins A9, OE#, and
RESET# is –0.5 V. During voltage transitions, A9, OE#,
and RESET# may undershoot VSS to –2.0 V for periods
of up to 20 ns. See . Maximum DC input voltage on pin
A9 is +12.5 V which may overshoot to 14.0 V for periods
up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions
for extended periods may affect device reliability.
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
20 ns
Figure 7. Maximum Negative
Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 8. Maximum Positive
Overshoot Waveform
Am29DL400B
23
OPERATING RANGES
Commercial (C) Devices
Extended (E) Devices
Ambient Temperature (TA). . . . . . . . . 0°C to +70°C
Ambient Temperature (TA). . . . . . –55°C to +125°C
Industrial (I) Devices
VCC Supply Voltages
Ambient Temperature (TA). . . . . . . –40°C to +85°C
VCC for all devices . . . . . . . . . . . . . . 2.7 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is guaranteed.
24
Am29DL400B
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ICC1
VCC Active Read Current
(Notes 1, 2)
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
CE# = VIL, OE# = VIH,
Byte Mode
5 MHz
7
12
1 MHz
2
4
CE# = VIL, OE# = VIH,
Word Mode
5 MHz
7
12
1 MHz
2
4
mA
ICC2
VCC Active Write Current
(Notes 2, 3)
CE# = VIL, OE# = VIH, WE# = VIL
15
30
mA
ICC3
VCC Standby Current
(Note 2)
OE# = VIL;
CE#, RESET# = VCC ± 0.3 V
0.2
5
µA
ICC4
VCC Reset Current (Note 2)
RESET# = VSS ± 0.3 V
0.2
5
µA
ICC5
Automatic Sleep Mode
(Notes 2, 4)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
0.2
5
µA
VCC Active Read-WhileProgram Current (Notes 1, 2,
5)
CE# = VIL,
OE# = VIH
Byte
21
45
ICC6
Word
21
45
ICC7
VCC Active Read-While-Erase
Current (Notes 1, 2, 5)
CE# = VIL,
OE# = VIH
Byte
21
45
Word
21
45
ICC8
VCC Active Program-WhileErase-Suspended Current
(Notes 2, 5)
CE# = VIL,
OE# = VIH
17
35
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 3.0 V ± 10%
11.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
0.45
V
VOH1
VOH2
VLKO
Output High Voltage
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
IOH = –100 µA, VCC = VCC min
VCC–0.4
Low VCC Lock-Out Voltage
(Note 5)
2.3
mA
mA
V
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC =
VCCmax.
3. ICC active while Embedded Erase or Embedded Program
is in progress.
4. Automatic sleep mode enables the low power mode
when addresses remain stable for tACC + 30 ns. Typical
sleep mode current is 200 nA.
5. Not 100% tested.
Am29DL400B
25
DC CHARACTERISTICS
Zero-Power Flash
Supply Current in mA
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 9.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
Supply Current in mA
8
3.6 V
6
2.7 V
4
2
0
1
2
3
Frequency in MHz
Note: T = 25 °C
Figure 10.
26
Typical ICC1 vs. Frequency
Am29DL400B
4
5
TEST CONDITIONS
3.3 V
2.7 kΩ
Device
Under
Test
CL
6.2 kΩ
Note: Diodes are IN3064 or equivalent
Figure 11.
Test Setup
Table 7.
Test Specifications
Test Condition
-70, -80
All others
Output Load
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
30
Input Rise and Fall Times
100
pF
5
ns
0.0–3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input Pulse Levels
Key to Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 12.
Input Waveforms and Measurement Levels
Am29DL400B
27
AC CHARACTERISTICS
Read-Only Operations
Parameter
Speed Options
JEDEC
Std
Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
Test Setup
-70
-80
-90
-120
Unit
Min
70
80
90
120
ns
CE#, OE# =
VIL
Max
70
80
90
120
ns
OE# = VIL
Max
70
80
90
120
ns
Output Enable to Output Delay
Max
30
30
35
50
ns
tDF
Chip Enable to Output High Z (Note 1)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
16
ns
tAXQX
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
ns
Read
Min
0
ns
tOEH
Output Enable Hold
Time (Note 1)
Toggle and
Data# Polling
Min
10
ns
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 7 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tRH
tRH
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 13. Read Operation Timings
28
Am29DL400B
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
All Speed Options
Unit
tReady
RESET# Pin Low (During Embedded Algorithms)
to Read Mode (See Note)
Max
20
µs
tReady
RESET# Pin Low (NOT During Embedded
Algorithms) to Read Mode (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
Reset High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14.
Reset Timings
Am29DL400B
29
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Std
Speed Options
Description
-70
-80
-90
5
Unit
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
25
25
30
30
ns
tFHQV
BYTE# Switching High to Output Active
Min
70
80
90
120
ns
CE#
OE#
BYTE#
BYTE#
Switching
from word
to byte
mode
DQ0–DQ14
tELFL
Data Output
(DQ0–DQ14)
Address
Input
DQ15
Output
DQ15/A-1
Data Output
(DQ0–DQ7)
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte
to word
mode
Data Output
(DQ0–DQ7)
DQ0–DQ14
Address
Input
DQ15/A-1
Data Output
(DQ0–DQ14)
DQ15
Output
tFHQV
Figure 15. BYTE# Timings for Read Operations
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 16.
30
-120
BYTE# Timings for Write Operations
Am29DL400B
AC CHARACTERISTICS
Erase and Program Operations
Parameter
Speed Options
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tASO
Address Setup Time to OE# low during toggle bit
polling
Min
45
45
45
50
ns
tAH
Address Hold Time
Min
45
45
45
50
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
tDVWH
tDS
Data Setup Time
Min
tWHDX
tDH
Data Hold Time
Min
tOEPH
Output Enable High during toggle bit polling
Min
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Zero Latency Between Read and Write Operations
Min
0
ns
Byte
Typ
9
Word
Typ
11
tWLAX
-70
-80
-90
-120
Unit
70
80
90
120
ns
0
ns
0
35
35
ns
45
50
0
20
35
20
ns
20
35
ns
35
25
50
ns
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Min
90
ns
tBUSY
µs
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Am29DL400B
31
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
Read Status Data (last two cycles)
555h
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
DOUT
tBUSY
tRB
RY/BY#
VCC
tVCS
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17.
Program Operation Timings
tAS
tWC
2AAh
Addresses
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status” ).
2. Illustration shows device in word mode.
Figure 18. Chip/Sector Erase Operation Timings
32
Am29DL400B
AC CHARACTERISTICS
Addresses
tWC
tWC
tRC
Valid PA
Valid RA
tWC
Valid PA
Valid PA
tAH
tCPH
tACC
tCE
CE#
tCP
tOE
OE#
tOEH
tGHWL
tWP
WE#
tDF
tWPH
tDS
tOH
tDH
Valid
Out
Valid
In
Data
Valid
In
Valid
In
tSR/W
WE# Controlled Write Cycle
Read Cycle
Figure 19.
CE# Controlled Write Cycles
Back-to-Back Read/Write Cycle Timings
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
True
Valid Data
High Z
True
Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 20. Data# Polling Timings (During Embedded Algorithms)
Am29DL400B
33
AC CHARACTERISTICS
tAHT
tAS
Addresses
tAHT
tASO
CE#
tCEPH
tOEH
WE#
tOEPH
OE#
tDH
DQ6/DQ2
tOE
Valid Data
Valid
Status
Valid
Status
Valid
Status
(first read)
(second read)
(stops toggling)
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 21. Toggle Bit Timings (During Embedded Algorithms)
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle
DQ2 and DQ6.
Figure 22.
34
DQ2 vs. DQ6
Am29DL400B
AC CHARACTERISTICS
Temporary Sector Unprotect
Parameter
JEDEC
Std
tVIDR
Description
VID Rise and Fall Time (See Note)
All Speed Options
Unit
Min
500
ns
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
µs
tRRB
RESET# Hold Time from RY/BY# High for
Temporary Sector Unprotect
Min
4
µs
Note: Not 100% tested.
12 V
RESET#
0 V or 3 V
0 V or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRRB
tRSP
RY/BY#
Figure 23.
Temporary Sector Unprotect Timing Diagram
Am29DL400B
35
AC CHARACTERISTICS
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Protect/Unprotect
Data
60h
Verify
60h
40h
Sector Protect: 100 µs
Sector Unprotect: 10 ms
1 µs
CE#
WE#
OE#
* For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 24.
36
Valid*
Sector Protect/Unprotect Timing Diagram
Am29DL400B
Status
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program
Operations
Parameter
Speed Options
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
45
tDVEH
tDS
Data Setup Time
Min
35
35
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
tWHWH1
tWHWH1
Programming Operation (Note
2)
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
-70
-80
-90
-120
Unit
70
80
90
120
ns
0
35
35
ns
45
50
45
50
35
30
Byte
Typ
9
Word
Typ
11
Typ
0.7
50
ns
ns
ns
ns
µs
sec
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Am29DL400B
37
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data, DQ7# = complement of the data written to the device,
DOUT = data written to the device.
3. Waveforms are for the word mode.
Figure 25. Alternate CE# Controlled Erase/Program Operation Timings
38
Am29DL400B
ERASE AND PROGRAMMING PERFORMANCE
Typ (Note 1)
Max (Note
2)
Unit
Comments
Sector Erase Time
0.7
15
sec
Chip Erase Time
10
Excludes 00h programming
prior to erasure (Note 4)
Parameter
sec
Byte Program Time
9
300
µs
Word Program Time
11
360
µs
Byte Mode
4.5
13.5
Word Mode
2.9
8.7
Chip Program Time
(Note 3)
Notes:
1. Typical program and erase times assume the following
conditions: 25°C, 3.0 V VCC, 1,000,000 cycles.
Additionally, programming typicals assume
checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V,
1,000,000 cycles.
3. The typical chip programming time is considerably less
than the maximum chip programming time listed, since
most bytes program faster than the maximum program
times listed.
Excludes system level
overhead (Note 5)
sec
4. In the pre-programming step of the Embedded Erase
algorithm, all bytes are programmed to 00h before
erasure.
5. System-level overhead is the time required to execute
the two- or four-bus-cycle sequence for the program
command. See Table 5 for further information on
command definitions.
6. The device has a guaranteed minimum erase and program
cycle endurance of 1,000,000 cycles.
Am29DL400B
39
LATCHUP CHARACTERISTICS
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter Description
Minimum Pattern Data Retention Time
40
Am29DL400B
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
PHYSICAL DIMENSIONS*
TS 048—48-Pin Standard TSOP
Dwg rev AA; 10/99
* For reference only. BSC is an ANSI standard for Basic Space Centering
Am29DL400B
41
PHYSICAL DIMENSIONS (continued)
TSR048—48-Pin Reverse TSOP
Dwg rev AA; 10/99
* For reference only. BSC is an ANSI standard for Basic Space Centering.
42
Am29DL400B
PHYSICAL DIMENSIONS (continued)
SO 044—44-Pin Small Outline
Dwg rev AC; 10/99
Am29DL400B
43
REVISION SUMMARY
Revision A (January 1998)
Distinctive Characterisitics
Added 20 Year data retention at 125° C bullet.
Initial release.
Revision B (March 1998)
Ordering Information
Expanded data sheet from Advance Information to
Preliminary version.
Revision D+1 (March 23, 1999)
Corrected TSOP description to 48-pin.
Revision C (April 1998)
AC Characteristics, Read-only Operations table
Global
Corrected tRC, tACC, and tCE for 90 ns speed option to
90 ns.
Changed -70R speed option to -70.
Figure 1, In-system Sector Protect/Unprotect
Algorithm
Added “PSLSCNT=1” to sector protect algorithm.
Reset Command
Deleted last paragraph; applies only to hardware
reset.
Revision E (December 7, 1999)
AC Characteristics—Figure 17. Program
Operations Timing and Figure 18. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start
at high.
Physical Dimensions
DQ6: Toggle Bit I
Replaced figures with more detailed illustrations.
First and second para., clarified that the toggle bit
may be read “at any address within the programming or erasing bank,” not at “any address.” Fourth
para., clarified “device” to “bank”
Revision E+1 (May 12, 2000)
Operating Ranges
Ordering Information
Optional processing: Deleted the burn-in option
AC Characteristics—Read-Only Operations
Deleted reference to regulated voltage range
Changed tDF to 16 ns for all speeds.
DC Characteristics
Revision E+2 (November 21, 2000)
Added Note 4 reference to ICC6 and ICC7.
Added table of contents.
Erase and Program Operations
Revision E+3 (January 7, 2005)
Corrected note references for tWHWH1, tWHWH2,
and tVCS
Global
Temporary Sector Unprotect
Added Colophon
Added note reference to tVIDR.
Updated Trademark
Figure 24, Sector Protect/Unprotect Timing
Diagram
Updated fonts
Updated figure to correct address waveform—valid address not required in first cycle.
Alternate CE# Controlled Erase/Program
Operations
Ordering Information
Added temperature ranges for Pb-free (Lead-free)
Packages
Added new valid combinations.
Revision E+4 (June 7, 2005)
Corrected note references for tWHWH1, tWHWH2
Erase and Programming Performance
Cover page and Title page
In Note 2, changed worst case endurance to 1 million
cycles.
Updated EOL disclaimers. Added notation to
superseding documents.
Revision D (June 1999)
44
Am29DL400B
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion LLC will not be liable to you and/or any third party for any claims or damages arising in connection with abovementioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such
failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels
and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the
prior authorization by the respective government entity will be required for export of those products.
Trademarks
Copyright © 2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies
Am29DL400B
45
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