TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) l High forward transfer admittance: |Yfs| = 10 S (typ.) l Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) l Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20kΩ) VDGR 20 V Gate-source voltage VGSS ±12 V Drain curren DC (Note 1) ID 5 Pulse (Note 1) IDP 20 PD (1) 1.1 Single-device operation (Note 3a) Drain power dissipation (t = 10s) Single-device value (Note 2a) at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 10s) Single-device value (Note 2b) at dual operation (Note 3b) A 0.5 PD (1) 0.6 ― JEITA ― TOSHIBA W PD(2) JEDEC 2-3R1E Weight: 0.035 g (typ.) Circuit Configuration W PD (2) 0.35 Single pulse avalanche energy (Note 4) EAS 32.5 mJ Avalanche current IAR 5 A Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) EAR 0.05 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-02-20 TPCS8205 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 114 Rth (ch-a) (2) 250 Rth (ch-a) (1) 208 Rth (ch-a) (2) 357 Unit °C/W Marking (Note 6) Type S8205 ※ Lot No. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 16 V, Tch = 25°C (Initiaal), L = 1.0 mH, RG = 25 Ω, IAR = 5.0 A Note 5: Repetitive rating: pulse width limited by max channel temperature Note 6: ○ on lower right of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-02-20 TPCS8205 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 V ¾ ¾ ±10 µA Drain cut-OFF current IDSS VDS = 20 V, VGS = 0 V ¾ ¾ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 20 ¾ ¾ V (BR) DSX ID = 10 mA, VGS = −12 V 8 ¾ ¾ Vth VDS = 10 V, ID = 200 µA 0.5 ¾ 1.2 RDS (ON) VGS = 2.0 V, ID = 3.5 A ¾ 60 90 RDS (ON) VGS = 2.5 V, ID = 3.5 A ¾ 40 60 RDS (ON) VGS = 4 V, ID = 4 A ¾ 30 45 VDS = 10 V, ID = 2.5 A 5 10 ¾ S ¾ 760 ¾ pF ¾ 110 ¾ pF pF Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance V V mΩ Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss ¾ 130 ¾ tr ¾ 7 ¾ ton ¾ 13 ¾ tf ¾ 13 ¾ toff ¾ 49 ¾ Total gate charge (gate-source plus gate-drain) Qg ¾ 11 ¾ nC Gate-source charge Qgs ¾ 8 ¾ nC Gate-drain (“miller”) charge Qgd ¾ 3 ¾ nC Rise time Turn-ON time VDS = 10 V, VGS = 0 V, f = 1 MHz ns Switching time Fall time Turn-OFF time VDD ≈ 16 V, VGS = 5 V, ID = 5 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP — — — 20 A — — −1.2 V VDSF IDR = 5 A, VGS = 0 V 3 2003-02-20 TPCS8205 4 2003-02-20 TPCS8205 DRAIN POWER DISSIPATION PD (W) PD – Ta 2 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) 1.6 1.2 (1) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s 0.8 (3) 0.4 (2) (4) 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta (°C) 5 2003-02-20 TPCS8205 SAFE OPERATING AREA 100 SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DRAIN CURRENT ID (A) 50 30 ID max (PULSE) * 1 ms * 10 5 3 10 ms * 1 0.5 0.3 0.1 0.05 0.03 * SINGLE PULSE Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 0.01 0.03 0.1 0.3 1 VDSS max 3 DRAIN-SOURCE VOLTAGE 10 VDS 30 100 (V) 6 2003-02-20 TPCS8205 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2003-02-20