VHB25-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28S is an NPN power transistor, designed 108-175 MHz applications. The device utilizes diffused emitter resistors to achieve good VSWR capability PACKAGE STYLE .380 4L STUD .112x45° A B C FEATURES: E • Common Emitter-Class-C • PG = 10 dB at 30 W/150 MHz • Omnigold™ Metalization System ØC E B D H I J G #8-32 UNC-2A MAXIMUM RATINGS F E IC 4.0 A VCBO 36 V VCEO 18 V VEBO PDISS 4.0 V 40 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 4.4 °C/W CHARACTERISTICS MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10725 TC = 25 °C NONETEST CONDITIONS SYMBOL MAXIMUM DIM MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCC = 28 V IC = 200 mA 35 f = 1.0 MHz POUT = 25 W f = 175 MHz 8.5 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.0 mA --- --- 250 pF dB % REV. C 1/1