NXP BC869-25 20 v, 2 a pnp medium power transistor Datasheet

BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
Rev. 7 — 12 October 2011
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Type number[1]
Package
NXP
JEITA
JEDEC
BCP69
SOT223
SC-73
-
BCP68
BC869
SOT89
SC-62
TO-243
BC868
BC69PA
SOT1061
-
-
BC68PA
[1]
NPN complement
Valid for all available selection groups.
1.2 Features and benefits






High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
 Linear voltage regulators
 High-side switches
 Battery-driven devices
 Power management
 MOSFET drivers
 Amplifiers
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
-
20
V
IC
collector current
-
-
2
A
ICM
peak collector current
-
-
3
A
single pulse; tp  1 ms
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
Table 2.
Quick reference data …continued
Symbol
Parameter
Conditions
Min
Typ
Max
hFE
DC current gain
VCE = 1 V;
IC = 500 mA
[1]
85
-
375
hFE selection -16
VCE = 1 V;
IC = 500 mA
[1]
100
-
250
hFE selection -25
VCE = 1 V;
IC = 500 mA
[1]
160
-
375
[1]
Unit
Pulse test: tp  300 s;  = 0.02.
2. Pinning information
Table 3.
Pin
Pinning
Description
Simplified outline
Graphic symbol
SOT223
1
base
2
collector
3
emitter
4
collector
2, 4
4
1
1
2
3
3
sym028
SOT89
1
emitter
2
collector
3
base
2
3
3
2
1
1
006aaa231
SOT1061
1
base
2
emitter
3
collector
3
3
1
2
1
2
sym013
Transparent top view
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
2 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
3. Ordering information
Table 4.
Ordering information
Type number[1]
Package
Name
Description
Version
BCP69
SC-73
plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
BC869
SC-62
plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads
SOT89
BC69PA
HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2  2  0.65 mm
[1]
SOT1061
Valid for all available selection groups.
4. Marking
Table 5.
BCP69_BC869_BC69PA
Product data sheet
Marking codes
Type number
Marking code
BCP69
BCP69
BCP69-16
BCP69/16
BCP69-25
BCP69/25
BC869
CEC
BC869-16
CGC
BC869-25
CHC
BC69PA
B3
BC69-16PA
BM
BC69-25PA
BN
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Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
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BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
32
V
VCEO
collector-emitter voltage
open base
-
20
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
2
A
ICM
peak collector current
-
3
A
IB
base current
-
0.4
A
IBM
peak base current
single pulse;
tp  1 ms
-
0.4
A
Ptot
total power dissipation
Tamb  25 C
[1]
-
0.65
W
[2]
-
1.00
W
[3]
-
1.35
W
[1]
-
0.50
W
[2]
-
0.95
W
[3]
-
1.35
W
[1]
-
0.42
W
[2]
-
0.83
W
[3]
-
1.10
W
[4]
-
0.81
W
[5]
-
1.65
W
single pulse;
tp  1 ms
BCP69
BC869
BC69PA
BCP69_BC869_BC69PA
Product data sheet
Tj
junction temperature
-
150
C
Tamb
ambient temperature
55
+150
C
Tstg
storage temperature
65
+150
C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
4 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac674
1.5
006aac675
1.5
(1)
(1)
Ptot
(W)
Ptot
(W)
(2)
1.0
(2)
1.0
(3)
(3)
0.5
0.5
0.0
–75
–25
25
75
0.0
–75
125
175
Tamb (°C)
–25
25
75
125
175
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 6 cm2
(1) FR4 PCB, mounting pad for collector 6 cm2
cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, mounting pad for collector 1
(3) FR4 PCB, standard footprint
Fig 1.
(3) FR4 PCB, standard footprint
Power derating curves SOT223
Fig 2.
Power derating curves SOT89
006aac676
2.0
Ptot
(W)
(1)
1.5
(2)
1.0
(3)
(4)
0.5
(5)
0.0
–75
–25
25
75
125
175
Tamb (°C)
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3.
Power derating curves SOT1061
BCP69_BC869_BC69PA
Product data sheet
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Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
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BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
-
-
192
K/W
[2]
-
-
125
K/W
[3]
-
-
93
K/W
[1]
-
-
250
K/W
[2]
-
-
132
K/W
[3]
-
-
93
K/W
[1]
-
-
298
K/W
[2]
-
-
151
K/W
[3]
-
-
114
K/W
[4]
-
-
154
K/W
[5]
-
-
76
K/W
BCP69
-
-
16
K/W
BC869
-
-
16
K/W
BC69PA
-
-
20
K/W
BCP69
BC869
BC69PA
Rth(j-sp)
BCP69_BC869_BC69PA
Product data sheet
thermal resistance from
junction to solder point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
6 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac677
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
10–1
10–5
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
006aac678
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.2
0.1
10
0.05
1
0
10–1
10–5
0.02
0.01
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
7 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac679
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
0.2
0.1
10
0.05
1
0
10–1
10–5
0.02
0.01
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 6.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
006aac680
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
0.2
102
0.1
0.05
10
0.02
0.01
1
0
10–1
10–5
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 7.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
8 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac681
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
0.2
102
0.1
10
0.05
0.02
0.01
1
0
10–1
10–5
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 8.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aac682
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
10
0.05
1
0
10–1
10–5
0.02
0.01
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 9.
Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
9 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac683
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
102
0.1
0.05
10
0.02
1
0.01
0
10–1
10–5
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, single-sided copper, standard footprint
Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac684
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
1
0.01
0
10–1
10–5
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
10 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac685
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
102
0.1
10
1
0
10–1
10–5
0.05
0.02
0.01
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
006aac686
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.25
0.33
0.2
0.1
10
0.05
0.02
1
0
10–1
10–5
0.01
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, 4-layer copper, standard footprint
Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
11 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac687
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.25
10
0.1
1
0
10–1
10–5
0.33
0.2
0.05
0.02
0.01
10–4
10–3
10–2
10–1
1
10
102
103
tp (s)
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061;
typical values
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
12 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 25 V; IE = 0 A
-
-
100
nA
VCB = 25 V; IE = 0 A;
Tj = 150 C
-
-
10
A
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 10 V
50
-
-
IC = 5 mA
DC current gain
DC current gain
VCEsat
VBE
Product data sheet
IC = 500 mA
[1]
85
-
375
IC = 1 A
[1]
60
-
-
IC = 2 A
[1]
40
-
-
VCE = 1 V
hFE selection -16
IC = 500 mA
[1]
100
-
250
hFE selection -25
IC = 500 mA
[1]
160
-
375
-
-
0.5
V
0.6
V
0.7
V
collector-emitter
saturation voltage
IC = 1 A; IB = 100 mA
[1]
IC = 2 A; IB = 200 mA
[1]
base-emitter voltage
VCE = 10 V; IC = 5 mA
[1]
VCE = 1 V; IC = 1 A
[1]
-
-
-
-
1
V
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
28
-
pF
fT
transition frequency
VCE = 5 V; IC = 50 mA;
f = 100 MHz
40
140
-
MHz
[1]
BCP69_BC869_BC69PA
VCE = 1 V
Pulse test: tp  300 s;  = 0.02.
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Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
13 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac697
300
hFE
006aab403
−2.4
IC
(A)
−2.0
(1)
IB (mA) = −18.0
−14.4
−1.6
200
−16.2
(2)
−12.6
−10.8
−9.0
−1.2
−7.2
100
−5.4
−0.8
(3)
−3.6
−0.4
0
-10-4
-10-3
-10-2
-10-1
−1.8
0
-1
-10
0
IC (A)
VCE = 1 V
−1
−2
−3
−4
VCE (V)
−5
Tamb = 25 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 15. hFE selection -16: DC current gain as a
function of collector current; typical values
006aac698
-1.2
Fig 16. hFE selection -16: collector current as a
function of collector-emitter voltage; typical
values
006aac699
-1
VCEsat
(V)
VBE
(V)
(1)
-10-1
-0.8
(1)
(2)
(2)
(3)
-10-2
-0.4
0.0
-10-1
-1
-10
-102
-103
-104
IC (mA)
VCE = 1 V
(3)
-10-3
-10-1
-1
(1) Tamb = 100 C
(2) Tamb = 25 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 55 C
Fig 17. hFE selection -16: base-emitter voltage as a
function of collector current; typical values
Product data sheet
-102
-103
-104
IC (mA)
IC/IB = 10
(1) Tamb = 55 C
BCP69_BC869_BC69PA
-10
Fig 18. hFE selection -16: collector-emitter saturation
voltage as a function of collector current;
typical values
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Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
14 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac707
400
(1)
hFE
006aab404
−2.4
IC
(A)
IB (mA) = −12.0
−2.0
−10.8
300
(2)
−9.6
−1.6
−8.4
−7.2
−6.0
−1.2
200
−4.8
(3)
−3.6
−0.8
−2.4
100
−0.4
0
-10-4
-10-3
-10-2
-10-1
−1.2
0
-1
-10
0
IC (A)
VCE = 1 V
−1
−2
−3
−4
VCE (V)
−5
Tamb = 25 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 19. hFE selection -25: DC current gain as a
function of collector current; typical values
006aac708
-1.2
Fig 20. hFE selection -25: collector current as a
function of collector-emitter voltage; typical
values
006aac709
–1
VCEsat
(V)
VBE
(V)
(1)
–10–1
-0.8
(1)
(2)
(2)
(3)
–10–2
-0.4
(3)
0.0
-10-1
-1
-10
-102
-103
-104
IC (mA)
VCE = 1 V
–10–3
–10–1
–1
(1) Tamb = 55 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 100 C
(3) Tamb = 55 C
Fig 21. hFE selection -25: base-emitter voltage as a
function of collector current; typical values
Product data sheet
–102
–103
–104
IC (mA)
IC/IB = 10
(2) Tamb = 25 C
BCP69_BC869_BC69PA
–10
Fig 22. hFE selection -25: collector-emitter saturation
voltage as a function of collector current;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
15 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
6.7
3.7
3.3
1
2
3
0.32
0.22
0.8
0.6
2.3
4.6
Dimensions in mm
04-11-10
Fig 23. Package outline SOT223 (SC-73)
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1
2
1.2
0.8
3
0.53
0.40
1.5
0.48
0.35
0.44
0.23
3
Dimensions in mm
06-08-29
Fig 24. Package outline SOT89 (SC-62/TO-243)
BCP69_BC869_BC69PA
Product data sheet
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Rev. 7 — 12 October 2011
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BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
1.3
0.65
max
0.35
0.25
1
1.05
0.95
2
0.45
0.35
1.1
0.9
0.3
0.2
2.1
1.9
3
1.6
1.4
Dimensions in mm
2.1
1.9
09-11-12
Fig 25. Package outline SOT1061 (HUSON3)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type
number[2]
Package
BCP69
SOT223
BC869
BC69PA
BCP69_BC869_BC69PA
Product data sheet
Description
Packing quantity
8 mm pitch, 12 mm tape and reel
SOT89
SOT1061
-
-135
8 mm pitch, 12 mm tape and reel; T1
-115
-
-135
8 mm pitch, 12 mm tape and reel; T3
[4]
-146
-
-
-
-115
-
4 mm pitch, 8 mm tape and reel
For further information and the availability of packing methods, see Section 14.
Valid for all available selection groups.
T1: normal taping
T3: 90 rotated taping
4000
-115
[2]
[4]
3000
[3]
[1]
[3]
1000
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
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BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
11. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig 26. Reflow soldering footprint SOT223 (SC-73)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
8.7
occupied area
Dimensions in mm
1
2
3
1.9
(3×)
2.7
preferred transport
direction during soldering
2.7
1.1
1.9
(2×)
sot223_fw
Fig 27. Wave soldering footprint SOT223 (SC-73)
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
18 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
4.75
2.25
2
1.9
1.2
0.2
0.85
solder lands
1.7
1.2
4.6
solder resist
0.5
4.85
solder paste
occupied area
1.1
(2×)
1
(3×)
1.5
Dimensions in mm
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig 28. Reflow soldering footprint SOT89 (SC-62/TO-243)
6.6
2.4
3.5
solder lands
7.6
0.5
solder resist
occupied area
1.8
(2×)
Dimensions in mm
preferred transport direction during soldering
1.9
1.5
(2×)
1.9
0.7
5.3
sot089_fw
Fig 29. Wave soldering footprint SOT89 (SC-62/TO-243)
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
19 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
2.1
1.3
0.5 (2×)
0.4 (2×)
0.5 (2×)
0.6 (2×)
1.05
2.3
0.6
0.55
0.25
1.1
0.25
1.2
0.25
0.4
0.5
1.6
1.7
Dimensions in mm
solder paste = solder lands
solder resist
occupied area
sot1061_fr
Reflow soldering is the only recommended soldering method.
Fig 30. Reflow soldering footprint SOT1061 (HUSON3)
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
20 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice Supersedes
BCP69_BC869_BC69PA v.7
20111012
Product data sheet
-
Modifications:
BC869_6
BCP69_6
•
The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
•
•
•
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Type number BC69PA added
Type number BCP69-16/DG and BCP69-16/IN removed
Section 1 “Product profile”: updated
Section 2 “Pinning information”: updated
Section 3 “Ordering information”: updated
Section 4 “Marking”: updated
Section 10 “Packing information”:updated
Table 6, 7 and 8: updated according to latest measurements
Figure 1, 15 to 18 updated
Figure 2 to 14, 24 to 25, 28 to 30: added
BC869_6
20041108
Product data sheet
-
BC869_5
BC869_5
20031202
Product specification
-
BC869_4
BC869_4
19990408
Product specification
-
BC869_3
BC869_3
19980716
Product specification
-
BC869_CNV_2
BC869_CNV_2
19970401
Product specification
-
-
BCP69_6
20081202
Product data sheet
-
BCP69_5
BCP69_5
20031125
Product specification
-
BCP69_4
BCP69_4
20021115
Product specification
-
BCP69_3
BCP69_3
19990408
Product specification
-
BCP69_CNV_2
BCP69_CNV_2
19970312
Product specification
-
-
BCP69_BC869_BC69PA
Product data sheet
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Rev. 7 — 12 October 2011
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BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
22 of 24
BCP69; BC869; BC69PA
NXP Semiconductors
20 V, 2 A PNP medium power transistors
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BCP69_BC869_BC69PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 12 October 2011
© NXP B.V. 2011. All rights reserved.
23 of 24
NXP Semiconductors
BCP69; BC869; BC69PA
20 V, 2 A PNP medium power transistors
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 13
Test information . . . . . . . . . . . . . . . . . . . . . . . . 16
Quality information . . . . . . . . . . . . . . . . . . . . . 16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16
Packing information . . . . . . . . . . . . . . . . . . . . 17
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 21
Legal information. . . . . . . . . . . . . . . . . . . . . . . 22
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Contact information. . . . . . . . . . . . . . . . . . . . . 23
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 October 2011
Document identifier: BCP69_BC869_BC69PA
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