Catalyst CAT25C65GLSATE13 32k/64k-bit spi serial cmos eeprom Datasheet

CAT25C33/65
32K/64K-Bit SPI Serial CMOS EEPROM
FEATURES
■ 1,000,000 program/erase cycles
■ 10 MHz SPI compatible
■ 100 year data tetention
■ 1.8 to 6.0 volt operation
■ Self-timed write cycle
■ Hardware and software protection
■ 8-pin DIP/SOIC and 14-pin TSSOP
■ Low power CMOS technology
■ 64-byte page write buffer
■ SPI modes (0,0 &1,1)
DESCRIPTION
required to access the device. The HOLD pin may be
used to suspend any serial communication without
resetting the serial sequence. The CAT25C32/64 is
designed with software and hardware write protection
features including Block write protection. The device is
available in 8-pin DIP, 8-pin SOIC, 14-pin TSSOP and
20-pin TSSOP packages.
The CAT25C33/65 is a 32K/64K-Bit SPI Serial CMOS
EEPROM internally organized as 4Kx8/8Kx8 bits.
Catalyst’s advanced CMOS Technology substantially
reduces device power requirements. The CAT25C33/
65 features a 64-byte page write buffer. The device
operates via the SPI bus serial interface and is enabled
though a Chip Select (CS). In addition to the Chip Select,
the clock input (SCK), data in (SI) and data out (SO) are
1
2
3
4
CS
SO
WP
VSS
8
7
6
5
VCC
HOLD
SCK
SI
c
s
DIP Package (P, L, GL)
1
2
3
4
CS
SO
WP
VSS
8
7
6
5
i
D
VCC
HOLD
SCK
SI
PIN FUNCTIONS
Pin Name
SO
SCK
u
n
TSSOP Package (U14, Y14)
CS
SO
NC
NC
NC
WP
VSS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
d
e
BLOCK DIAGRAM
VCC
HOLD
NC
NC
NC
SCK
SI
SENSE AMPS
SHIFT REGISTERS
WORD ADDRESS
BUFFERS
SO
SI
CS
WP
HOLD
SCK
I/O
CONTROL
SPI
CONTROL
LOGIC
BLOCK
PROTECT
LOGIC
Function
Serial Data Output
Write Protect
VCC
+1.8V to +6.0V Power Supply
VSS
Ground
CS
Chip Select
SI
Serial Data Input
HOLD
Suspends Serial Input
NC
No Connect
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
XDEC
COLUMN
DECODERS
E2PROM
ARRAY
DATA IN
STORAGE
Serial Clock
WP
CONTROL LOGIC
it
n
o
PIN CONFIGURATION
s
t
r
– Protect first page, last page, any 1/4 or lower
1/2 of EEPROM array
temperature ranges
SOIC Package (S, V, GV)
a
P
■ Block write protection
■ Commercial, industrial, automotive and extended
HIGH VOLTAGE/
TIMING CONTROL
STATUS
REGISTER
1
Doc. No. 1000, Rev. H
CAT25C33/65
ABSOLUTE MAXIMUM RATINGS*
*COMMENT
Temperature Under Bias ................. –55°C to +125°C
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum
rating for extended periods may affect device performance and reliability.
Storage Temperature ....................... –65°C to +150°C
Voltage on any Pin with
Respect to VSS1) ................... –2.0V to +VCC +2.0V
VCC with Respect to VSS ................................ –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(2) ........................ 100 mA
a
P
RELIABILITY CHARACTERISTICS
Symbol
NEND
TDR
(3)
(3)
VZAP(3)
ILTH
(3)(4)
Parameter
Endurance
Min.
100
ESD Susceptibility
2000
Latch-up
100
D.C. OPERATING CHARACTERISTICS
VCC = +1.8V to +6.0V, unless otherwise specified.
ICC1
ICC2
ISB(5)
ILI
ILO
it
n
o
Parameter
Power Supply Current
(Operating Write)
Power Supply Current
(Operating Read)
Power Supply Current
(Standby)
Input Leakage Current
Output Leakage Current
c
s
i
D
Max.
1,000,000
Data Retention
Symbol
Typ.
VIL(3)
VIH(3)
VOL1
VOH1
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
VOL2
VOH2
Output Low Voltage
Output High Voltage
Min.
-1
VCC x 0.7
d
e
Max.
Units
10
mA
2
mA
1
µA
2
3
µA
µA
VCC x 0.3
VCC + 0.5
0.4
V
V
V
V
0.2
V
V
VCC - 0.8
VCC-0.2
Units
Cycles/Byte
u
n
Limits
Typ.
s
t
r
Years
Volts
mA
Test Conditions
VCC = 5V @ 10MHz
SO=open; CS=Vss
VCC = 5.0V
FCLK = 10MHz
CS = VCC
VIN = VSS or VCC
VOUT = 0V to VCC,
CS = 0V
4.5V≤VCC<5.5V
IOL = 3.0mA
IOH = -1.6mA
1.8V≤VCC<2.7V
IOL = 150µA
IOH = -100µA
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) These parameter are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
(5) Maximum standby current (ISB ) = 10µA for the Automotive and Extended Automotive temperature range.
Doc. No. 1000, Rev. H
2
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT25C33/65
PIN CAPACITANCE (1)
Applicable over recommended operating range from TA=25˚C, f=1.0 MHz, VCC=+5.0V (unless otherwise noted).
Symbol
Test Conditions
Max.
Units
Conditions
COUT
Output Capacitance (SO)
8
pF
VOUT=0V
CIN
Input Capacitance (CS, SCK, SI, WP, HOLD)
6
pF
VIN=0V
A.C. CHARACTERISTICS
Limits
VCC =
2.5V-6.0V
Vcc=
1.8V-6.0V
SYMBOL PARAMETER
Min.
Max.
Min.
Max.
VCC =
4.5V-5.5V
Min.
a
P
Max.
UNITS Conditions
tSU
Data Setup Time
50
50
20
tH
Data Hold Time
50
50
20
tWH
SCK High Time
250
125
tWL
SCK Low Time
250
125
fSCK
Clock Frequency
DC
tLZ
HOLD to Output Low Z
tRI(1)
Input Rise Time
tFI(1)
Input Fall Time
tHD
HOLD Setup Time
100
tCD
HOLD Hold Time
100
tWC
Write Cycle Time
tV
Output Valid from Clock Low
tHO
Output Hold Time
tDIS
Output Disable Time
250
250
75
ns
tHZ
HOLD to Output High Z
150
100
50
ns
tCS
CS High Time
tCSS
CS Setup Time
tCSH
CS Hold Time
u
n
50
it
n
o
d
e
DC
2
c
s
i
D
1
2
100
40
40
3
ns
ns
ns
ns
10
MHz
50
50
ns
2
2
µs
2
2
µs
100
DC
40
ns
40
ns
10
10
5
ms
250
250
80
ns
0
0
s
t
r
Test
0
CL = 50pF
ns
500
250
200
ns
500
250
100
ns
500
250
100
ns
NOTE:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
3
Doc No. 1000, Rev. H
CAT25C33/65
FUNCTIONAL DESCRIPTION
PIN DESCRIPTION
The CAT25C33/65 supports the SPI bus data
transmission protocol. The synchronous Serial Peripheral
Interface (SPI) helps the CAT25C33/65 to interface
directly with many of today’s popular microcontrollers.
The CAT25C33/65 contains an 8-bit instruction register.
(The instruction set and the operation codes are detailed
in the instruction set table)
SI: Serial Input
SI is the serial data input pin. This pin is used to input all
opcodes, byte addresses, and data to be written to the
25C33/65. Input data is latched on the rising edge of the
serial clock.
SO: Serial Output
SO is the serial data output pin. This pin is used to
transfer data out of the 25C33/65. During a read cycle,
data is shifted out on the falling edge of the serial clock.
After the device is selected with CS going low, the first
byte will be received. The part is accessed via the SI pin,
with data being clocked in on the rising edge of SCK.
The first byte contains one of the six op-codes that define
the operation to be performed.
Figure 1. Sychronous Data Timing
VIH
CS
d
e
VIL
tCSS
VIH
VIL
tH
tSU
VIH
VALID IN
SI
VIL
VOH
SO
it
n
o
HI-Z
VOL
Note: Dashed Line= mode (1, 1) — — — —
INSTRUCTION SET
c
s
Instruction
WREN
i
D
WRDI
RDSR
WRSR
READ
WRITE
tWL
tWH
SCK
u
n
tRI
tFI
tV
a
P
s
t
r
tCS
tCSH
tHO
tDIS
HI-Z
Opcode
Operation
0000 0110
Enable Write Operations
0000 0100
Disable Write Operations
0000 0101
Read Status Register
0000 0001
Write Status Register
0000 0011
Read Data from Memory
0000 0010
Write Data to Memory
Power-Up Timing(2)(3)
Symbol
Parameter
Max.
Units
tPUR
Power-up to Read Operation
1
ms
tPUW
Power-up to Write Operation
1
ms
Note:
(1) X=0 for 25010, 25020. X=A8 for 25040
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
Doc. No. 1000, Rev. H
4
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT25C33/65
SCK: Serial Clock
SCK is the serial clock pin. This pin is used to synchronize the communication between the microcontroller
and the 25C33/65. Opcodes, byte addresses, or data
present on the SI pin are latched on the rising edge of the
SCK. Data on the SO pin is updated on the falling edge
of the SCK.
CS
CS: Chip Select
CS is the Chip select pin. CS low enables the CAT25C33/
65 and CS high disables the CAT25C33/65. CS high
takes the SO output pin to high impedance and forces
the devices into a Standby Mode (unless an internal
write operation is underway). The CAT25C33/65 draws
ZERO current in the Standby mode. A high to low
transition on CS is required prior to any sequence being
initiated. A low to high transition on CS after a valid write
sequence is what initiates an internal write cycle.
WP
WP: Write Protect
WP is the Write Protect pin. The Write Protect pin will allow
normal read/write operations when held high. When WP is
tied low and the WPEN bit in the status register is set to “1”,
all write operations to the status register are inhibited. WP
going low while CS is still low will interrupt a write to the status
register. If the internal write cycle has already been initiated,
WP going low will have no effect on any write operation to the
status register. The WP pin function is blocked when the
WPEN bit is set to 0.
d
e
STATUS REGISTER
7
6
5
4
WPEN
X
X
BP2
MEMORY PROTECTION
BP2
BP1
BP0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
it
n
o
c
s
i
D
1
1
0
1
1
1
Non-Protection
3
u
n
BP1
2
a
P
BP0
1
0
WEL
RDY
MEMORY PROTECTION
CAT25C33
CAT25C65
Q1
0000-03FF
0000-07FF
Q2
0400-07FF
0800-0FFF
Q3
0800-0BFF
1000-17FF
Q3 Protected
Q4
0C00-0FFF
1800-1FFF
Q4 Protected
H1
0000-07FF
0000-0FFF
H1 Protected
P0
0000-003F
0000-003F
P0 Protected
Pn
0FC0-0FFF
0FC0-1FFF
Q1 Protected
Q2 Protected
s
t
r
HOLD
HOLD: Hold
The HOLD pin is used to pause transmission to the
CAT25C33/65 while in the middle of a serial sequence
without having to re-transmit entire sequence at a later time.
To pause, HOLD must be brought low while SCK is low. The
SO pin is in a high impedance state during
the time the part is paused, and transitions on the SI pins
will be ignored. To resume communication, HOLD is brought
high, while SCK is low. (HOLD should be held high any time
this function is not being used.) HOLD may be tied high
Pn Protected
WRITE PROTECT ENABLE OPERATION
WPEN
WP
WEL
Protected
Blocks
Unprotected
Blocks
Status
Register
0
X
0
Protected
Protected
Protected
0
X
1
Protected
Writable
Writable
1
Low
0
Protected
Protected
Protected
1
Low
1
Protected
Writable
Protected
X
High
0
Protected
Protected
Protected
X
High
1
Protected
Writable
Writable
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
5
Doc No. 1000, Rev. H
CAT25C33/65
directly to Vcc or tied to Vcc through a resistor. Figure
9 illustrates hold timing sequence.
lower half of the memory, the first page or the last page by
setting these bits. Once protected the user may only
STATUS REGISTER
read from the protected portion of the array. These bits are
non-volatile.
The Status Register indicates the status of the device.
The WPEN (Write Protect Enable) is an enable bit for the WP
pin. The WP pin and WPEN bit in the status register control
the programmable hardware write protect feature.Hardware
write protection is enabled when WP is low and WPEN bit
is set to high. The user cannot write to the status register
(including the block protect bits and the WPEN bit) and the
block protected sections in thememory array when the chip
is hardware write protected. Only the sections of the
memory array that are not block protected can be written.
Hardware write protection is disabled when either WP pin is
high or the WPEN bit is zero.
The RDY (Ready) bit indicates whether the CAT25C33/
65 is busy with a write operation. When set to 1 a write
cycle is in progress and when set to 0 the device
indicates it is ready. This bit is read only.
The WEL (Write Enable) bit indicates the status of the
write enable latch . When set to 1, the device is in a
Write Enable state and when set to 0 the device is in
a Write Disable state. The WEL bit can only be set by
the WREN instruction and can be reset by the WRDI
instruction.
DEVICE OPERATION
The BP0, BP1 and BP2 (Block Protect) bits indicate
which blocks are currently protected. These bits are
set by the user issuing the WRSR instruction. The user
is allowed to protect any quarter of the memory, the
Write Enable and Disable
The CAT25C33/65 contains a write enable latch. This latch
must be set before any write operation. The device powers
Figure 2. WREN Instruction Timing
CS
it
n
o
SK
0
SI
0
0
0
c
s
SO
i
D
d
e
a
P
s
t
r
u
n
0
1
1
0
HIGH IMPEDANCE
Note: Dashed Line= mode (1, 1) — — — —
Figure 3. WRDI Instruction Timing
CS
SK
SI
SO
0
0
0
0
0
1
0
0
HIGH IMPEDANCE
Note: Dashed Line= mode (1, 1) — — — —
Doc. No. 1000, Rev. H
6
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT25C33/65
and FFFh for 25C33) is reached, the address counter rolls
over to 0000h allowing the read cycle to be continued
indefinitely. The read operation is terminated by pulling the
CS high. To read the status register, RDSR instruction
should be sent. The contents of the status register are
shifted out on the SO line. The status register may be read
READ Sequence
at any time even during a write cycle. Read sequece is
The part is selected by pulling CS low. The 8-bit read illustrated in Figure 4. Reading status register is illustrated
instruction is transmitted to the CAT25C33/65, followed in Figure 5.
by the 16-bit address(the three Most Significant Bits are
don’t care for 25C65 and four most significant bits are WRITE Sequence
don't care for 25C33). After the correct read instruction The CAT25C33/65 powers up in a Write Disable state. Prior
and address are sent, the data stored in the memory at to any write instructions, the WREN instruction must be
the selected address is shifted out on the SO pin. The sent to CAT25C33/65. The device goes into Write enable
data stored in the memory at the next address can be state by pulling the CS low and then clocking the WREN
read sequentially by continuing to provide clock pulses. instruction into CAT25C33/65. The CS must be brought
The internal address pointer is automatically incremented high after the WREN instruction to enable writes to the
to the next higher address after each byte of data is device.
shifted out. When the highest address (1FFFh for 25C65
up in a write disable state when Vcc is applied. WREN
instruction will enable writes (set the latch) to the device.
WRDI instruction will disable writes (reset the latch) to
the device. Disabling writes will protect the device
against inadvertent writes.
d
e
Figure 4. Read Instruction Timing
CS
0
1
2
3
4
5
6
7
8
9
SK
it
n
o
OPCODE
SI
0
0
0
0
0
0
1
20
21
BYTE ADDRESS*
1
HIGH IMPEDANCE
SO
u
n
10
22
23
24
25
a
P
26
27
28
29
30
2
1
s
t
r
DATA OUT
7
6
5
4
3
0
MSB
*Please check the instruction set table for address
c
s
Note: Dashed Line= mode (1, 1) — — — —
i
D
Figure 5. RDSR Instruction Timing
CS
SCK
SI
0
0
1
2
3
4
5
6
7
1
0
1
8
9
10
11
7
6
5
4
12
13
14
2
1
OPCODE
0
0
0
0
DATA OUT
SO
HIGH IMPEDANCE
3
0
MSB
Note: Dashed Line= mode (1, 1) — — — —
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
7
Doc No. 1000, Rev. H
CAT25C33/65
If the write operation is initiated immediately after the
WREN instruction without CS being brought high,
the data will not be written to the array because the
write enable latch will not have been properly set.
Also, for a successful write operation the address of
the memory location(s) to be programmed must be
outside the protected address field location selected
by the block protection level.
The Status Register can be read to determine if the write cycle
is still in progress. If Bit 0 of the Status Register is set at 1, write
cycle is in progress. If Bit 0 is set at 0, the device is ready for
the next instruction.
Page Write
The CAT25C33/65 features page write capability. After the first
initial byte the host may continue to write up to 64 bytes of data
to the CAT25C33/65. After each byte of data is received, six
lower order address bits are internally incremented by one; the
high order bits of address will remain constant. The only
restriction is that the 64 bytes must reside on the same page.
If the address counter reaches the end of the page and clock
continues, the counter will “roll over” to the first address of the
page and overwrite any data that may have been written. The
CAT25C33/65 is automatically returned to the write disable
state at the completion of the write cycle. Figure 8 illustrates the
page write sequence.
s
t
r
Byte Write
Once the device is in a Write Enable state, the user
may proceed with a write sequence by setting the CS
low, issuing a write instruction via the SI line, followed
by the 16-bit address (the three Most Significant Bits
are don’t care for 25C65 and four most significant bits
are don't care for 25C33), and then the data to be
written. Programming will start after the CS is
brought high. Figure 6 illustrates byte write sequence.
To write to the status register, the WRSR instruction should be
During an internal write cycle, all commands will be sent. Only Bit 2, Bit 3 and Bit 7 of the status register can be
ignored except the RDSR (Read Status Register) written using the WRSR instruction. Figure 7 illustrates the
sequence of writing to status register.
instruction.
Figure 6. Write Instruction Timing
it
n
o
CS
0
1
2
3
4
SK
5
6
7
8
OPCODE
SI
0
0
0
0
0
0
1
0
d
e
u
n
21
22
23
a
P
24
25
26
27
28
29
30
31
DATA IN
D7 D6 D5 D4 D3 D2 D1 D0
ADDRESS
c
s
HIGH IMPEDANCE
SO
i
D
Note: Dashed Line= mode (1, 1) – – – –
Figure 7. WRSR Instruction Timing
CS
0
1
2
3
4
5
6
7
8
9
10
11
1
7
6
5
4
12
13
14
15
2
1
0
SCK
SI
0
OPCODE
0
0
0
0
DATA IN
0
0
3
MSB
SO
HIGH IMPEDANCE
Note: Dashed Line= mode (1, 1) — — — —
Doc. No. 1000, Rev. H
8
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT25C33/65
DESIGN CONSIDERATIONS
The CAT25C33/65 powers up in a write disable state
and in a low power standby mode. A WREN instruction
must be issued to perform any writes to the device after
power up. Also,on power up CS should be brought low
to enter a ready state and receive an instruction. After
a successful byte/page write or status register write the
CAT25C33/65 goes into a write disable mode. CS must
be set high after the proper number of clock cycles to
start an internal write cycle. Access to the array during
an internal write cycle is ignored and program-ming
is continued. On power up, SO is in a high impedance.
When powering down, the supply should be taken down
to 0V, so that the CAT25C33/65 will be reset when power
is ramped back up. If this is not possible, then, following
a brown-out episode, the CAT25C33/65 can be reset by
refreshing the contents of the Status Register (See Application Note AN10).
Figure 8. Page Write Instruction Timing
CS
0
1
2
3
4
5
6
7
8
21
22
d
e
23 24-31
SK
OPCODE
SI
0
0
0
0
0
0
1
0
it
n
o
HIGH IMPEDANCE
SO
Note: Dashed Line = mode (1, 1) – – – –
Figure 9. HOLD Timing
CS
c
s
i
D
SCK
HOLD
u
n
ADDRESS
Data
Byte 1
32-39
24+(N-1)x8-1..24+(N-1)x8 24+Nx8-1
DATA IN
Data
Byte 2
tCD
a
P
s
t
r
Data
Byte 3
Data Byte N
0
7..1
tCD
tHD
tHD
tHZ
HIGH IMPEDANCE
SO
tLZ
Note: Dashed Line= mode (1, 1) — — — —
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
9
Doc No. 1000, Rev. H
CAT25C33/65
ORDERING INFORMATION
Prefix
Device #
Suffix
25C65
CAT
Optional
Company ID
S
Product
Number
25C33: 32K
25C65: 64K
-1.8
I
Temperature Range
Package
P: PDIP
S: SOIC
U14: 14-pin TSSOP
L: PDIP (Lead free, Halogen free)
V: SOIC (Lead free, Halogen free)
Y14: 14-pin TSSOP (Lead free, Halogen free)
GL: PDIP (Lead-free, Halogen-free, NiPdAu lead plating)
GV: SOIC, JEDEC (Lead-free, Halogen-free, NiPdAu lead plating)
d
e
TE13
Tape & Reel
s
t
r
Operating Voltage
Blank = 2.5 to 6.0V
1.8 = 1.8 to 6.0V
a
P
Notes:
(1) The device used in the above example is a 25C65SI-1.8TE13 (SOIC, Industrial Temperature, 1.8 Volt to 6 Volt Operating Voltage,
Tape & Reel)
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Doc. No. 1000, Rev. H
10
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
REVISION HISTORY
Date
8/5/2004
Rev.
F
Reason
Updated Features
Updated DC Operating Characteristics table & notes
07/11/2005
G
Update Reliability Characteristic
Update Ordering Information
09/22/2005
H
Update Pin Configuration
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Copyrights, Trademarks and Patents
Trademarks and registered trademarks of Catalyst Semiconductor include each of the following:
DPP ™
AE2 ™
MiniPot™
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issued to Catalyst Semiconductor contact the Company’s corporate office at 408.542.1000.
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typical semiconductor applications and may not be complete.
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09/22/05
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