TC74HCT4053AF/AFN/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT4053AF,TC74HCT4053AFN,TC74HCT4053AFT Triple 2-Channel Analog Multiplexer/Demultiplexer Note: The TC74HCT4053A are high speed CMOS ANALOG MULTIPLEXER/DEMULTIPLEXER fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. This inputs are compatible with TTL, NMOS and CMOS output voltage levels. The TC74HCT4053A has a 2 channel × 3 configuration. The digital signal to the control terminal turns “ON” the corresponding switch of each channel a large amplitude signal (VCC − VEE) can then be switched by the small logical amplitude (VCC − GND) control signal. For example, in the case of VCC = 5 V, GND = 0 V, VEE = −5 V, signals between −5 V and +5 V can be switched from the logical circuit with a single power supply of 5 V. As the ON-resistance of each switch is low, they can be connected to circuits with low input impedance. All inputs are equipped with protection circuits against static discharge or transient excess voltage. xxxFN (JEDEC SOP) is not available in Japan. TC74HCT4053AF TC74HCT4053AFN TC74HCT4053AFT Features • High speed: tpd = 30 ns (typ.) at VCC = 5 V VEE = 0 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • Compatible with TTL output: VIH = 2.0 V (min) VIL = 0.8 V (max) • Wide interfacing ability: LSTTL, NMOS, CMOS • Low ON resistance: RON = 50 Ω (typ.) at VCC − VEE = 9 V • High noise immunity: THD = 0.02% (typ.) at VCC − VEE = 9 V • Pin and function compatible with 4053B Weight SOP16-P-300-1.27A SOL16-P-150-1.27 TSSOP16-P-0044-0.65A : 0.18 g (typ.) : 0.13 g (typ.) : 0.06 g (typ.) Pin Assignment 1Y 1 16 VCC 0Y 2 15 Y-COM 1Z 3 14 X-COM Z-COM 4 13 1X 0Z 5 12 0X INH 6 11 A VEE 7 10 B GND 8 9 C (top view) 1 2007-10-01 TC74HCT4053AF/AFN/AFT Truth Table Control Inputs “ON” Channel Inhibit C B A HCT4053A L L L L 0X, 0Y, 0Z L L L H 1X, 0Y, 0Z L L H L 0X, 1Y, 0Z L L H H 1X, 1Y, 0Z L H L L 0X, 0Y, 1Z L H L H 1X, 0Y, 1Z L H H L 0X, 1Y, 1Z L H H H 1X, 1Y, 1Z H X X X NONE X: Don’t care System Diagram Y-COM X-COM A Logic Level Converter OUT B C C IN 0X 1X 0Y 1Y 0Z OUT INH C IN 1Z Z-COM IEC Logic Symbol INH A X-COM B Y-COM C Z-COM (6) (11) (14) (10) MUXDMUX G2 2×0 2×1 0, 1 0 1 (12) (13) (2) (15) (1) (9) (5) (4) (3) 2 0X 1X 0Y 1Y 0Z 1Z 2007-10-01 TC74HCT4053AF/AFN/AFT Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5 to 13 V Supply voltage range VCC − VEE −0.5 to 13 V Control input voltage VIN −0.5 to VCC + 0.5 V Switch I/O voltage VI/O VEE − 0.5 to VCC + 0.5 V Control input diode current IICK ±20 mA I/O diode current IIOK ±20 mA IT ±25 mA DC VCC or ground current ICC ±50 mA Power dissipation PD 180 mW Storage temperature Tstg −65 to 150 °C Switch through current Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage range VCC 4.5 to 12 V Supply voltage range VEE −7.5 to 0 V Supply voltage range VCC − VEE 4.5 to 12 V Control input voltage VIN 0 to VCC V Switch I/O voltage VI/O VEE to VCC V Operating temperature Topr −40 to 85 °C Control input rise and fall time tr, tf 0 to 500 ns Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused control inputs must be tied to either VCC or GND. 3 2007-10-01 TC74HCT4053AF/AFN/AFT Electrical Characteristics DC Characteristics Characteristics VEE (V) High-level control input voltage VIHC Low-level control input voltage VILC VCC (V) Min Typ. Max Min Max 4.5 to 5.5 2.0 ⎯ ⎯ 2.0 ⎯ 9.0 2.5 ⎯ ⎯ 2.5 ⎯ 4.5 to 5.5 ⎯ ⎯ 0.8 ⎯ 0.8 9.0 ⎯ ⎯ 0.8 ⎯ 0.8 GND 4.5 ⎯ 85 180 ⎯ 225 −4.5 4.5 ⎯ 55 120 ⎯ 150 −5.5 5.5 ⎯ 50 110 ⎯ 140 GND 9.0 ⎯ 55 120 ⎯ 150 GND 4.5 ⎯ 70 150 ⎯ 190 −4.5 4.5 ⎯ 50 100 ⎯ 125 −5.5 5.5 ⎯ 45 90 ⎯ 115 GND 9.0 ⎯ 50 100 ⎯ 125 VIN = VILC or VIHC GND 4.5 ⎯ 10 30 ⎯ 35 VI/O = VCC to VEE −4.5 4.5 ⎯ 5 12 ⎯ 15 −5.5 5.5 ⎯ 5 11 ⎯ 14 GND 5.5 ⎯ ⎯ ±60 ⎯ ±600 −5.5 5.5 ⎯ ⎯ ±100 ⎯ ±1000 VIN = VILC or VIHC VI/O = VCC to VEE II/O ≤ 2 mA ON resistance RON VIN = VILC or VIHC VI/O = VCC or VEE II/O ≤ 2 mA Difference of ON resistance between switches ΔRON II/O ≤ 2 mA VOS = VCC or GND Input/output leakage current (switch OFF) IOFF Switch input leakage current (switch ON) IIZ Control input current Ta = −40 to 85°C Ta = 25°C Test Condition Symbol VIS = GND or VCC VIN = VILC or VIHC GND 5.5 ⎯ ⎯ ±60 ⎯ ±600 VIN = VILC or VIHC −5.5 5.5 ⎯ ⎯ ±100 ⎯ ±1000 IIN VIN = VCC or GND GND 5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 ICC VIN = VCC or GND GND 5.5 ⎯ ⎯ 4.0 ⎯ 40.0 −5.5 5.5 ⎯ ⎯ 8.0 ⎯ 80.0 IC Per input: VIN = 0.5 V or 2.4 V Other input: VCC or GND GND 5.5 ⎯ ⎯ 2.0 ⎯ 2.9 Quiescent supply current VOS = VCC or GND 4 Unit V V Ω Ω nA nA μA μA mA 2007-10-01 TC74HCT4053AF/AFN/AFT AC Characteristics (CL = 50 pF, Input tr = tf = 6 ns, GND = 0 V) Characteristics Symbol VEE (V) VCC (V) Phase difference between input and output Output enable time Output disable time φI/O tpZL tpZH tpLZ tpHZ (Note 1) (Note 1) Ta = −40 to 85°C Ta = 25°C Test Condition Min Typ. Max Min Max GND 4.5 ⎯ 6 12 ⎯ 15 GND 5.5 ⎯ 5 11 ⎯ 14 GND 9.0 ⎯ 4 ⎯ ⎯ ⎯ GND 4.5 ⎯ 33 50 ⎯ 63 GND 5.5 ⎯ 26 45 ⎯ 57 GND 9.0 ⎯ 17 ⎯ ⎯ ⎯ GND 4.5 ⎯ 45 65 ⎯ 81 GND 5.5 ⎯ 37 59 ⎯ 73 GND 9.0 ⎯ 26 ⎯ ⎯ ⎯ Unit ns ns ns Control input capacitance Cin ⎯ ⎯ ⎯ 5 10 ⎯ 10 pF COMMON terminal capacitance CIS −5.0 5.0 ⎯ 11 20 ⎯ 20 pF SWITCH terminal capacitance COS −5.0 5.0 ⎯ 7 15 ⎯ 15 pF Feedthrough capacitance CIOS −5.0 5.0 ⎯ 0.75 2 ⎯ 2 pF Power dissipation capacitance CPD GND 5.0 ⎯ 67 ⎯ ⎯ ⎯ pF Note 1 (Note 2) RL = 1 kΩ Note 2: CPD is defined as the value of the internal equivalent capacitance of IC which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD · VCC · fIN + ICC 5 2007-10-01 TC74HCT4053AF/AFN/AFT Analog Switch Characteristics (GND = 0 V, Ta = 25°C) (Note 1) Characteristics VEE (V) VCC (V) RL = 10 kΩ Sine wave distortion (T.H.D) Frequency response (switch ON) Test Condition Symbol CL = 50 pF fIN = 1 kHz fMAX Typ. VIN = 8.0 Vp-p −4.5 4.5 0.020 VIN = 11.0 Vp-p −5.5 5.5 0.019 −4.5 4.5 Adjust fIN voltage to obtain 0dBm at VOS (Note 2) Increase fIN frequency until dB meter reads −3dB (Note 3) RL = 50 Ω, CL = 10 pF (Note 2) fIN = 1 MHz, Sine wave (Note 3) −5.5 5.5 % 190 150 200 MHz 180 Vin is centered at (VCC − VEE)/2 Feed through attenuation (switch OFF) Adjust input for 0dBm −4.5 4.5 −50 RL = 600 Ω, CL = 50 pF −5.5 5.5 −50 Crosstalk (control input to signal output) RL = 600 Ω, CL = 50 pF −4.5 4.5 140 fIN = 1 MHz, Square wave (tr = tf = 6 ns) −5.5 5.5 180 −4.5 4.5 −50 −5.5 5.5 −50 −4.5 4.5 −90 dB fIN = 1 MHz, Sine wave Adjust VIN to obtain 0dBm at input Crosstalk (between any switches) Unit RL = 600 Ω, CL = 50 pF fIN = 1 MHz, Sine wave RL = 50 Ω, CL = 15 pF fIN = 100 kHz, VSWITCH = 1 VRMS mV dB dB Note 1: These characteristics are determined by design of devices. Note 2: Input COMMON terminal, and measured at SWITCH terminal. Note 3: Input SWITCH terminal, and measured at COMMON terminal. 6 2007-10-01 TC74HCT4053AF/AFN/AFT Switching Characteristics Test Circuits 1. tpLZ, tpHZ, tpZL, tpZH 6 ns VCC VC C I/O S1 10% 3V 1.3 V GND VCC 1 kΩ O/I VO/I (S1 = VCC, S2 = GND) S2 VEE GND 1.3 V tpZH 50 pF from P.G 90% 6 ns VO/I (S1 = GND, S2 = VCC) tpHZ 1.3 V tpZL 90% VOH VOL VOH 10% tpLZ VOL 2. Cross Talk (control input − switch output) fIN = 1 MHz duty = 50% tr = tf = 6 ns VCC −VCC VCC 600 Ω I/O O/I VEE GND 50 pF C 600 Ω GND from P.G 3. Feedthrough Attenuation VCC O/I I/O VEE GND 50 pF VIN 600 Ω 0.1 μF VCC 600 Ω C 4. CIOS, CIS, COS CIOS VCC C COS I/O (COMMON) O/I VEE GND CIS (SWITCH) VCC 7 2007-10-01 TC74HCT4053AF/AFN/AFT 5. Cross Talk (between any two switches) VCC C VCC VIN O/I 600 Ω 0.1 μF 600 Ω C VEE GND 50 pF O/I 600 Ω 600 Ω I/O 50 pF I/O VCC COM C 15 pF I/O 10 pF VIN VCC 50 Ω C 50 Ω 1 VRMS I/O VEE GND 6. Frequency Response (switch ON) VCC C VIN VCC O/I I/O 0.1 μF VEE GND 8 2007-10-01 TC74HCT4053AF/AFN/AFT Package Dimensions Weight: 0.18 g (typ.) 9 2007-10-01 TC74HCT4053AF/AFN/AFT Package Dimensions (Note) Note: This package is not available in Japan. Weight: 0.13 g (typ.) 10 2007-10-01 TC74HCT4053AF/AFN/AFT Package Dimensions Weight: 0.06 g (typ.) 11 2007-10-01 TC74HCT4053AF/AFN/AFT RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 12 2007-10-01