2SK4016 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4016 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V (Note 1) ID 13 Pulse (t = 1 ms) (Note 1) IDP 52 Drain power dissipation (Tc = 25°C) PD 50 W Single-pulse avalanche energy (Note 2) EAS 1033 mJ Avalanche current IAR 13 A Repetitive avalanche energy (Note 3) EAR 5.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C DC Drain current A 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 2.5 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω 1 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2005-05-30 2SK4016 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Gate leakage current Gate-source breakdown voltage Test Condition Drain cutoff current V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 6.5 A ⎯ 0.33 0.50 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 6.5 A 5.0 10 ⎯ S Input capacitance Ciss ⎯ 3100 ⎯ Reverse transfer capacitance Crss ⎯ 20 ⎯ Output capacitance Coss ⎯ 270 ⎯ VOUT ⎯ 60 ⎯ RL = 30Ω ⎯ 110 ⎯ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr Turn-on time ton 15 Ω Switching time Fall time ID = 6.5 A 10 V VGS 0V tf Turn-off time VDD ∼ − 200 V Duty < = 1%, tw = 10 μs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 13 A pF ns ⎯ 50 ⎯ ⎯ 215 ⎯ ⎯ 62 ⎯ ⎯ 40 ⎯ ⎯ 22 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 13 A (Note 1) IDRP ⎯ ⎯ ⎯ 52 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 13 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 13 A, VGS = 0 V, ⎯ 220 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 0.8 ⎯ μC Marking 2SK4016 Part No. (or abbreviation code) Lot No. A line indicates a lead (Pb)-free package or lead (Pb)-free finish. 2 2005-05-30 2SK4016 ID – VDS ID – VDS 20 6.3 10 DRAIN CURRENT ID (A) 7 8 10 COMMON SOURCE Tc = 25°C PULSE TEST 8 7 6 5.7 4 5.4 2 16 6.3 12 6 8 5.7 4 5.4 VGS = 5 V 0 0 0 2 4 6 8 10 VGS = 5 V 0 DRAIN−SOURCE VOLTAGE VDS (V) 10 20 DRAIN−SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 16 12 8 100 Tc = −55°C 4 25 0 0 4 2 6 ID = 13 A 4 2 6 3 0 4 8 12 16 20 (V) RDS (ON) – ID 10 DRAIN−SOURCE ON-RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 6 GATE−SOURCE VOLTAGE VGS COMMON SOURCE VDS = 10 V PULSE TEST Tc = −55°C 10 25 100 1 1 COMMON SOURCE Tc = 25°C PULSE TEST (V) |Yfs| – ID 0.1 0. 1 50 8 0 10 GATE−SOURCE VOLTAGE VGS 100 40 VDS – VGS 10 COMMON SOURCE VDS = 10 V PULSE TEST 20 30 DRAIN−SOURCE VOLTAGE VDS (V) ID – VGS 24 COMMON SOURCE Tc = 25°C PULSE TEST 6.6 8 6 DRAIN CURRENT ID (A) 10 10 1 VGS = 10 V V 0.1 0.1 100 DRAIN CURRENT ID (A) COMMON SOURCE Tc = 25°C PULSE TEST 1 10 100 DRAIN CURRENT ID (A) 3 2005-05-30 2SK4016 RDS (ON) − Tc IDR − VDS 100 COMMON SOURCE VDS = 10 V PULSE TEST 1.2 0.8 ID = 10 A 3 6 0.4 −40 0 40 80 CASE TEMPERATURE 120 160 10 5 10 1 0.1 Tc (°C) VGS = 0 V 1 3 0 0.4 0.8 C − VDS Vth (V) 10000 GATE THRESHOLD VOLTAGE (pF) Ciss CAPACITANCE C 1000 Coss 100 COMMON SOURCE VGS = 0 V Crss f = 1 MHz 10 Tc = 25°C 1 10 ID = 1 mA 3 2 1 0 −80 100 600 DRAIN−SOURCE VOLTAGE VDS (V) PD (W) DRAIN POWER DISSIPATION 0 40 80 120 160 Tc (°C) DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 60 40 20 80 −40 CASE TEMPERATURE PD − Tc 40 COMMON SOURCE VDS = 10 V DRAIN−SOURCE VOLTAGE VDS (V) 0 0 1.6 Vth − Tc 4 0.1 1.2 DRAIN−SOURCE VOLTAGE VDS (V) 120 160 CASE TEMPERATURE Tc (°C) 500 12.5 Tc = 25°C VDD = 100V VDS 200V 10 400V 300 7.5 VGS 200 5 100 2.5 0 0 200 ID = 13 A PULSE TEST 400 15 COMMON SOURCE 20 40 (V) 0 −80 COMMON SOURCE Tc = 25°C PULSE TEST GATE−SOURCE VOLTAGE VGS 1.6 DRAIN REVERSE CURRENT IDR (A) DRAIN−SOURCE ON-RESISTANCE RDS (ON) (Ω) 2.0 0 80 60 TOTAL GATE CHARGE Qg (nC) 4 2005-05-30 2SK4016 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 0.01 SINGLE PULSE T Duty = t/T Rth (ch-c) = 2.5°C/W 0.001 10μ 1ｍ 100μ 100ｍ 10ｍ PULSE WIDTH 10 1 tw (s) EAS – Tch SAFE OPERATING AREA 100 1200 ID max (PULSED) * 1000 100 μs * DRAIN CURRENT ID (A) ID max (CONTINUOUS) * 800 10 1 ms * 600 400 DC OPERATION Tc = 25°C 1 200 0 *SINGLE NONREPETITIVE 25 PULSE Tc = 25°C 0.1 CURVES MUST BE 50 75 100 125 150 Channel temperature (initial) Tch (°C) DERATED LINEARLY WITH INCREASE IN TEMPERATURE VDSS max 0.01 1 10 100 DRAIN−SOURCE VOLTAGE 1000 VDS 15 V (V) BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 90 V, L = 10.7 mH 5 Waveform EAS = Ε ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V DD ⎠ ⎝ VDSS 2005-05-30 2SK4016 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2005-05-30