MT4S100T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.72dB (@f=2GHz) · High Gain:|S21e| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking Type name 0.8±0.05 2 1 4 2 3 0.2±0.05 · 0.52±0.05 3 0.12±0.05 P 6 4 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-Base voltage VCBO 6 V Collector-Emitter voltage VCEO 3 V Emitter-Base voltage VEBO 1.2 V IC 15 mA Collector-Current Base-Current IB 7 mA Collector Power dissipation PC 45 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature Range 1 1. BASE 2. EMITTER 3. COLLECTOR 4. EMITTER TESQ JEDEC JEITA TOSHIBA Weight: 0.0015 g - 02-05-28 MT4S100T Microwave Characteristics (Ta = 25°C) Characteristics Transition Frequency Symbol fT 2 Test Condition Min Typ. Max Unit VCE=2V, IC=10mA, f=2GHz 19 23 - GHz Insertion Gain |S21e| VCE=2V, IC=10mA, f=2GHz 14 17 - dB Noise Figure NF VCE=2V, IC=5mA, f=2GHz - 0.72 1.0 dB Min Typ. Max Unit Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector Cut-off Current ICBO VCB=6V, IE=0 - - 1 µA Emitter Cut-off Current IEBO VEB=1V, IC=0 - - 1 µA DC Current Gain hFE VCE=2V, IC=10mA 200 - 400 - Output Capacitance Cob VCB=2V, IE=0, f=1MHz - 0.41 0.6 pF Reverse Transistor Capacitance Cre VCB=2V, IE=0, f=1MHz (Note 1) - 0.14 0.2 pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 2 02-05-28 MT4S100T 2 INSERTION GAIN |S21e| (dB) VCE=2V 20 2 15 1V 10 5 f=1GHz Ta=25℃ 0 15 10 1V 5 10 COLLECTOR CURRENT IC (mA) f=2GHz Ta=25℃ 100 1 REVERSE TRANSFER CAPACITANCE Cre(pF) OUTPUT CAPACITANCE Cob(pF) fT-I C 30 VCE=2V 25 20 15 10 1V 5 f=2GHz Ta=25℃ 0 1 10 COLLECTOR CURRENT I C (mA) NF,Ga-I C 2.0 16 1.4 14 1.2 12 1.0 10 NF 0.8 8 0.6 6 0.4 f=2GHz 4 VCE=2V 2 Ta=25℃ 0 10 100 COLLECTOR CURRENT I C (mA) 0.2 0.0 1 ASSOCIATED GAIN Ga(dB) 1.6 0.4 Cob 0.3 0.2 Cre 0.1 0 1 10 COLLECTOR-BASE VOLTAGE V CB (V) P C -Ta 80 60 45 40 20 0 0 3 IE=0 f=1MHz Ta=25℃ 0.5 100 18 Ga 100 Cre,Cob-V CB 0.6 0.1 20 1.8 10 COLLECTOR CURRENT I C (mA) 100 COLLECTOR POWER DISSIPATION PC(mW) 35 TRANSITION FREQUENCY fT(GHz) VCE=2V 0 1 NOISE FIGURE NF(dB) |S21e| -I C 20 2 INSERTION GAIN |S21e| (dB) 2 |S21e| -I C 25 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta(℃) 175 02-05-28 MT4S100T RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 4 02-05-28 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.