TPC6501 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6501 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC IC 2.0 Pulse ICP 3.5 IB 200 PC 0.8 Collector current Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range (Note) A mA 1.6 W JEDEC ― ― Tj 150 °C JEITA Tstg −55 to 150 °C TOSHIBA Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) 2-3T1A Weight: 0.011 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 100 nA V (BR) CEO IC = 10 mA, IB = 0 10 V hFE (1) VCE = 2 V, IC = 0.2 A 400 1000 hFE (2) VCE = 2 V, IC = 0.6 A 200 Collector-emitter saturation voltage VCE (sat) IC = 0.6 A, IB = 12 mA 0.12 V Base-emitter saturation voltage VBE (sat) IC = 0.6 A, IB = 12 mA 1.10 V See Figure 1 circuit diagram. 60 VCC ∼ − 6 V, RL = 10 Ω 215 IB1 = −IB2 = 12 mA 25 Collector-emitter breakdown voltage DC current gain Rise time Switching time tr Storage time tstg Fall time tf 1 ns 2001-12-18 TPC6501 Circuit Configuration Marking VCC 6 IB1 Input IB1 5 4 RL 20 µs Output H2A IB2 IB2 Duty cycle < 1% Figure 1 1 2 3 Switching Time Test Circuit & Timing Chart 2 2001-12-18 TPC6501 IC – VCE hFE – IC 2.4 10000 40 2.0 60 (A) 10 20 6 1.2 4 hFE 8 1.6 DC current gain IC Collector current 30 IB = 2 mA 0.8 Common emitter Ta = 25°C Single nonrepetitive l 0 0.4 0 0 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage VCE Common emitter VCE = 2 V Single nonrepetitive pulse Ta = 100°C 1000 −55 25 100 10 0.001 1.2 (V) 0.01 0.1 Collector current VCE (sat) – IC Common emitter IC/IB = 50 Single nonrepetitive pulse Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) 10 25 −55 Ta = 100°C 0.01 0.001 0.001 0.01 0.1 Collector current 1 IC IC 10 (A) VBE (sat) – IC 1 0.1 1 Common emitter IC/IB = 50 Single nonrepetitive pulse Ta = 100°C 25 0.1 0.001 10 (A) −55 1 0.01 0.1 Collector current 1 IC 10 (A) IC – VBE 1.6 Common emitter VCE = 2 V Single nonrepetitive pulse IC (A) 2.0 Collector current 1.2 0.8 Ta = 100°C −55 0.4 25 0 0 0.4 0.8 Base-emitter voltage VBE 1.2 1.6 (V) 3 2001-12-18 TPC6501 Transient Thermal Resistance rth – tw Transient thermal resistance rth (j-a) (°C/W) 1000 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 10 IC max (pulsed) ♦ 10 ms♦ 1 ms♦ 100 µs♦ 1 10 s♦ DC operation (Ta = 25°C) ♦: Single nonrepetitive pulse Ta = 25°C 0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 VCEO max Collector current IC (A) IC max (continuous)100 ms♦ 10 Collector-emitter voltage VCE 100 (V) 4 2001-12-18 TPC6501 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 5 2001-12-18