Infineon BCP54 Npn silicon af transistor Datasheet

BCP54...BCP56
NPN Silicon AF Transistors
For AF driver and output stages
4
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51 ... BCP53 (PNP)
3
2
1
Type
Marking
Pin Configuration
BCP54
BCP 54
1=B
2=C
3=E
4=C
SOT223
BCP54-10
BCP 54-10 1 = B
2=C
3=E
4=C
SOT223
BCP54-16
BCP 54-16 1 = B
2=C
3=E
4=C
SOT223
BCP55
BCP 55
1=B
2=C
3=E
4=C
SOT223
BCP55-10
BCP 55-10 1 = B
2=C
3=E
4=C
SOT223
BCP55-16
BCP 55-16 1 = B
2=C
3=E
4=C
SOT223
BCP56
BCP 56
1=B
2=C
3=E
4=C
SOT223
BCP56-10
BCP 56-10 1 = B
2=C
3=E
4=C
SOT223
BCP56-16
BCP 56-16 1 = B
2=C
3=E
4=C
SOT223
1
VPS05163
Package
Nov-29-2001
BCP54...BCP56
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Unit
BCP54
BCP55
BCP56
VCEO
45
60
80
Collector-emitter voltage RBE 1k
VCER
45
60
100
Collector-base voltage
VCBO
45
60
100
Emitter-base voltage
VEBO
5
5
5
DC collector current
IC
Peak collector current
ICM
1.5
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 124 °C
Ptot
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
1
V
A
mA
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
17
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
Nov-29-2001
BCP54...BCP56
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCP54
45
-
-
BCP55
60
-
-
BCP56
80
-
-
BCP54
45
-
-
BCP55
60
-
-
BCP56
100
-
-
V(BR)EBO
5
-
-
ICBO
-
-
100
nA
ICBO
-
-
20
µA
hFE
25
-
-
BCP54...56
40
-
250
hFE-grp.10
63
100
160
hFE-grp.16
100
160
250
25
-
-
VCEsat
-
-
0.5
VBE(ON)
-
-
1
fT
-
100
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V
V(BR)CEO
V(BR)CBO
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
-
IC = 5 mA, VCE = 2 V
DC current gain 1)
IC = 150 mA, VCE = 2 V
hFE
DC current gain 1)
hFE
IC = 500 mA, VCE = 2 V
Collector-emitter saturation voltage1)
V
IC = 500 mA, IB = 50 mA
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V
AC Characteristics
Transition frequency
MHz
IC = 50 mA, VCE = 10 V, f = 100 MHz
1) Pulse test: t ≤=300µs, D = 2%
3
Nov-29-2001
BCP54...BCP56
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC)
VCE = 10V
10 3
1800
mA
fT
BCP 54...56
EHP00267
MHz
1500
5
1350
IF
1200
1050
10 2
900
750
5
600
450
300
150
0
0
15
30
45
60
75
90 105 120 °C
10 1
10 0
150
5 10 1
5 10 2
TS
mA
ΙC
DC current gain hFE = f (IC )
Collector cutoff current ICBO = f (T A)
VCE = 2V
VCB = 30V
10 3
h FE
BCP 54...56
EHP00268
10 4
5
Ι CBO
BCP 54...56
EHP00269
nA
max
10 3
10
2
10 3
100 C
25 C
-50 C
10 2
5
typ
10 1
10 1
5
10 0 0
10
10 0
10
1
10
2
10
3
mA 10
ΙC
10 -1
4
0
50
100
C
150
TA
4
Nov-29-2001
BCP54...BCP56
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC = f (VBEsat ), hFE = 10
IC = f (VCEsat), h FE = 10
10 4
ΙC
BCP 54...56
EHP00270
10 4
ΙC
mA
EHP00271
mA
10 3
10 3
100 C
25 C
-50 C
10 2
100 C
25 C
-50 C
10 2
10 1
10 1
10 0
BCP 54...56
0
0.2
0.4
0.6
0.8
V
10 0
1.2
0
0.2
0.4
0.6
V
0.8
V CEsat
V BEsat
Permissible pulse load
Ptotmax / PtotDC = f (tp )
5
BCP 54...56
Ptot max
Ptot DC
EHP00272
D=
tp
T
tp
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 0
tp
5
Nov-29-2001
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