B AV10 0 - B AV10 3 HD DL10 MINI MELF Glass-Encapsulate Diodes Small Signal Fast Switching Diodes Features ●VR ●IF MINI MELF(SOD- 8 0 / LL- 3 4 ) 50-200V 250mA Applications ● Extreme fast switches B AV Item Symbol Unit Conditions 10 0 10 1 10 2 10 3 Repetitive Peak Reverse Voltage VRRM V 50 100 150 200 Repetitive Peak Reverse Voltage VR V 60 120 200 250 IF mA 60Hz Half-sine wave, Resistance load, Ta=25℃ IFSM A 60Hz Half-sine Ta=25℃ TJ ℃ -55~+175 Storage Temperature TSTG ℃ -55 ~ +175 Power Dissipation P tot mW Forward current Surge(Non-repetitive)Forward Current Junction Temperature wave,1 cycle, High Diode Semiconductor 250 1 400 1 Electrical Characteristics (TA=25℃ unless otherwise noted) Symbol Unit Peak Forward Voltage VFM V Peak Reverse Current IRRM uA Reverse recovery time trr ns Diode capacitance Cd pF Item Test Condition IFM=1 00 mA IFM=2 00 mA V RM=VR Ta=25℃ IF=30mA to IR=30mA, Irr=3mA,RL=100.Ω VR=0,f=1MHZ High Diode Semiconductor Max 1.00 1.25 0.1 50 5 2 Typical Characteristics Figure 1. Reverse Current vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage 1000 IF – Forward Current ( mA ) I R – Reverse Current ( mA ) 1000 100 Scattering Limit 10 1 VR = VRRM 0.1 0.01 Tj = 25°C 100 Scattering Limit 10 1 0.1 0 40 80 120 160 200 Tj – Junction Temperature ( °C ) 0 0.4 0.8 1.2 1.6 2.0 VF – Forward Voltage ( V ) rf – Differential Forward Resistance (W ) Figure 3. Differential Forward Resistance vs. Forward Current 1000 100 Tj = 25°C 10 1 0.1 1 10 100 IF – Forward Current ( mA ) High Diode Semiconductor 3 MINI MELF 0.063(1.6) 0.055(1.4) 0.020(0.5) 0.012(0.3) 0.020(0.5) 0.012(0.3) 0.146(3.7) 0.130(3.3) Dimensions in millimeters MINI MELF 1.8 3.5 0.7 JSHD JSHD High Diode Semiconductor 4 Packaging Specifications for Surface Mounted Glass Diodes 1. The method of packaging and dimension are shown as below figure. (Dimension in mm) LS-31 (MicroMELF) LS-34 (QuadroMELF) LL-34 (MiniMELF) DO-213AA(MiniMELF) 2,500 pcs per reel 20,000 pcs per box 8 reels per box 5 54 100,000 pcs per carton 5 boxes per carton 185 202 105 2 20 185 High Diode Semiconductor 5