Diotec BC857S Surface mount general purpose si-epi-planar double-transistor Datasheet

BC856S ... BC859S
BC856S ... BC859S
Surface Mount General Purpose Si-Epi-Planar Double-Transistors
Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage
PNP
PNP
Version 2006-08-01
±0.1
2 x 0.65
5
4
±0.1
6
0.9±0.1
2
2.1
Type
Code
1
1.25±0.1
2
3
2.4
Dimensions - Maße [mm]
6 = C1
5 = B2
4 = E2
1 = E1
2 = B1
3 = C2
Power dissipation
Verlustleistung
300 mW
Plastic case
Kunststoffgehäuse
SOT-363
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
per transistor – pro Transistor
BC856S
BC857S
BC858S
BC859S
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open
- VCBO
65 V
45 V
30 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCEO
80 V
50 V
30 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEB0
5V
Power dissipation – Verlustleistung
Ptot
300 mW 1)
Collector current – Kollektorstrom (dc)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
IEM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
per transistor – pro Transistor
Min.
Typ.
Max.
hFE
hFE
–
110
90 ... 270
–
–
800
Small signal current gain – Kleinsignal-Stromverstärkung
hfe
–
220 ... 600
–
Input impedance – Eingangs-Impedanz
hie
1.6 kΩ
–
15 kΩ
Output admittance – Ausgangs-Leitwert
hoe
18 µS
–
110 µS
Reverser voltage transfer ratio – Spannungsrückwirkung
hre
–
1.5 ... 3*10-4
–
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
- VCE = 5 V, - IC = 2 mA
h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC856S ... BC859S
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
per transistor – pro Transistor
Min.
Typ.
Max.
- VCEsat
- VCEsat
–
–
90 mV
200 mV
250 mV
600 mV
- VBEsat
- VBEsat
–
–
700 mV
900 mV
–
–
- VBE
- VBE
600 mV
–
650 mV
–
750 mV
820 mV
- ICB0
- ICB0
–
–
–
–
15 nA
5 µA
- IEB0
–
–
100 nA
fT
100 MHz
–
–
CCBO
–
–
6 pF
CEB0
–
10 pF
–
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCE = 30 V, Tj = 125°C, (E open)
Emitter-Base cutoff current
- VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
RthA
< 420 K/W 1)
BC846S ... BC849S
Pinning – Anschlussbelegung
6
T1: E1 = 1, C1 = 6, B1 = 2
T2: E2 = 4, C2 = 3, B2 = 5
2
4
T2
T1
1
2
1
5
2
3
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
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