TOSHIBA TLP747G

TLP747G
TOSHIBA Photocoupler
GaAs Ired & Photo−Thyristor
TLP747G
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
Unit in mm
The TOSHIBA TLP747G consists of a photo−thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
•
Peak off−state voltage: 400 V (min.)
•
Trigger LED current: 15 mA (max.)
•
On−state current: 150 mA (max.)
•
UL recognized: UL1577, file No. E67349
•
BSI approved: BS EN60065: 2002
Certificate No. 7364
BS EN60950-1: 2002
Certificate No. 7365
•
SEMCO approved:EN60065,EN60950-1,EN60335-1
•
Certificate no.302586
Isolation voltage: 4000 Vrms (min.)
•
Option (D4) type
TOSHIBA
11−7A8
Weight: 0.42 g
VDE approved: DIN EN 60747-5-2,
Certificate No. 40009373
Maximum operating insulation voltage: 630, 890 VPK
Highest permissible over voltage: 6000, 8000 VPK
(Note)
•
When a EN 60747-5-2 approved type is needed,
please designate the “option (D4)”
Creepage distance
7.62mm pich
standard type
: 7.0mm (min.)
10.16mm pich
TLP×××F type
8.0mm (min.)
Clearance
: 7.0mm (min.)
8.0mm (min.)
Insulation thickness : 0.5mm (min.)
0.5mm (min.)
1
Pin Configuration (top view)
1
6
2
5
3
4
1 : Anode
2 : Cathode
3 : NC
4 : Cathode
5 : Anode
6 : Gate
2007-10-01
TLP747G
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
60
mA
ΔIF / °C
−0.7
mA / °C
Peak forward current (100μs pulse, 100pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Peak forward voltage (RGK = 27kΩ)
VDRM
400
V
Peak reverse voltage (RGK = 27kΩ)
VRRM
400
V
On−state current
IT(RMS)
150
mA
On−state current derating (Ta ≥ 25°C)
ΔIT / °C
−2.0
mA / °C
ITP
3
A
Peak one cycle surge current
ITSM
2
A
Peak reverse gate voltage
VGM
5
V
PD
150
mW
ΔPD / °C
−2.0
mW / °C
Tj
100
°C
Storage temperature range
Tstg
−55~125
°C
Operating temperature range
Topr
−40~100
°C
Lead soldering temperature (10s)
Tsol
260
°C
Total package power dissipation
PT
250
mW
ΔPT / °C
−3.3
mW / °C
BVS
4000
Vrms
Forward current
Detector
LED
Forward current derating (Ta ≥ 39°C)
Peak on−state current (100 μs pulse, 120pps)
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
Junction temperature
Total package power dissipation derating (Ta ≥ 25°C)
Isolation voltage (AC, 1min., R.H. ≤ 60%)
(Note)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note)
Device considered a two terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
―
―
120
Vac
Forward current
IF
20
―
25
mA
Operating temperature
Topr
−25
―
85
°C
Gate to cathode resistance
RGK
―
27
33
kΩ
Gate to cathode capacity
CGK
―
0.01
0.1
μF
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
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TLP747G
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5V
―
―
10
μA
Capacitance
CT
V = 0, f = 1MHz
―
30
―
pF
Ta = 25°C
―
10
5000
nA
Ta = 100°C
―
1
100
μA
Ta = 25°C
―
10
5000
nA
Ta = 100°C
―
1
100
μA
ITM = 100mA
―
0.9
1.3
V
RGK = 27kΩ
―
0.2
―
mA
VAK = 280V, RGK = 27kΩ
5
10
―
V / μs
Anode to gate
―
20
―
Gate to cathode
―
350
―
Min.
Typ.
Max.
Unit
Off−state current
IDRM
VAK = 400V
RGK = 27kΩ
Reverse current
IRRM
VKA = 400V
RGK = 27kΩ
On−state voltage
VTM
Holding current
IH
Off−state dv / dt
dv / dt
Capacitance
Cj
V = 0,
f = 1MHz
pF
Coupled Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Trigger LED current
IFT
VAK = 6V, RGK = 27kΩ
―
―
15
mA
Turn−on time
ton
IF = 30mA, VAA = 50V
RGK = 27kΩ
―
10
―
μs
500
―
―
V / μs
―
0.8
―
pF
―
Ω
Coupled dv / dt
Capacitance (input to output)
Isolation resistance
dv / dt
CS
RS
VS = 500V, RGK = 27kΩ
VS = 0, f = 1MHz
VS = 500V, R.H. ≤ 60%
AC, 1 minute
Isolation voltage
BVS
1×10
12
10
14
4000
―
―
AC, 1 second, in oil
―
10000
―
DC, 1 minute, in oil
―
10000
―
3
Vrms
Vdc
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TLP747G
IT (RMS) – Ta
250
80
200
R.M.S. on-state current
IT (RMS) (mA)
Allowable forward current
IF (mA)
IF – Ta
100
60
40
20
0
−20
150
100
50
0
60
40
20
80
100
0
−20
120
0
Ambient temperature Ta (°C)
Ta = 25°C
50
30
(mA)
500
Forward current IF
Allowable pulse forward current IFP (mA)
Pulse width ≦ 100μs
1000
300
100
50
30
10
5
3
1
0.5
0.3
10−3
10−2
3
10−1
3
Duty cycle ratio
3
0.1
0.6
100
0.8
1.0
1.2
∆VF / ∆Ta - IF
1.6
1.8
(V)
IFP – VFP
1000
−2.8
Pulse forward current IFP (mA)
Forward voltage temperature
coefficient ∆VF / ∆Ta (mV / °C)
1.4
Forward voltage VF
DR
−3.2
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
0.1
120
IF – V F
100
Ta = 25°C
10
3
100
80
Ambient temperature Ta (°C)
IFP – DR
3000
60
40
20
500
300
100
50
30
10
Pulse width ≦ 10μs
5
Repetitive
3
frequency = 100Hz
Ta = 25°C
0.3 0.5
1
3
5
Forward current IF
10
1
0.6
30 50
(mA)
1.0
1.4
1.8
Pulse forward voltage
4
2.2
2.6
VFP (V)
2007-10-01
TLP747G
ton – IF
dv / dt - RGK
200
Ta = 25°C
RL = 100Ω
VAA = 50V
20
Critical rate of rise of
off-state voltage dv / dt (V / μs)
Turn-on time ton (μs)
30
RGK = 10kΩ
10
0
0
27kΩ
10
20
40
30
Forward current IF
(mA)
Ta = 25°C
100
VAK = 200V
50
400V
30
10
5
1
30
50
100
RGK (KΩ)
RL = 100Ω
RGK = 10kΩ
10
IFT - RGK
27kΩ
100
5
Ta = 25°C
VAK = 6V
3
0
20
40
80
60
100
IH – Ta
0.7
(mA)
10
VAK = 6V
Ambient temperature Ta (°C)
Holding current IH
5
Gate-cathode resistance
20
0.5
RL = 100Ω
50
30
10
5
RGK = 10kΩ
2
1
0.3
0.1
0
Trigger led current IFT (mA)
Trigger led current IFT (mA)
IFT – Ta
3
27kΩ
20
40
60
3
5
10
Gate-cathode resistance
80
30
50
100
200
RGK (KΩ)
100
IH - RGK
Ambient temperature Ta (°C)
5
Ta = 25°C
3
(mA)
Holding current IH
Critical rate of rise of
off-state voltage dv / dt (V / μs)
dv / dt - CGK
Ta = 85°C
500
VAK = 400V
300 R
GK = 27kΩ
100
50
30
1
0.5
0.3
10
5
0.001
0.003
0.005
Gate-cathode capacitance
0.1
1
0.01
CGK (μF)
3
5
10
Gate-cathode resistance
5
30
50
100
200
RGK (KΩ)
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TLP747G
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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