Rohm BR35H160-WC Silicon monolithic integrated circuit Datasheet

1/4
◇ STRUCTURE
Silicon Monolithic Integrated Circuit
◇ PRODUCT
SPI BUS 16Kbit (2,048×8bit) EEPROM
◇
PART NUMBER
BR35H160-WC series
PART NUMBER
BR35H160F-WC
BR35H160FJ-WC
BR35H160FVT-WC
BR35H160FVM-WC
◇ FEATURES
PACKAGE
SOP8
SOP-J8
TSSOP-B8
MSOP8
Serial Peripheral Interface
Single power supply (2.5V~5.5V)
1,000,000 erase/write cycles endurance (85℃)
500,000 erase/write cycles endurance (105℃)
300,000 erase/write cycles endurance (125℃)
◇ ABSOLUTE MAXIMUM RATING (Ta=25℃)
Parameter
Symbol
Supply Voltage
Vcc
Rating
Unit
V
-0.3~6.5
560 (BR35H160F-WC) *1
560 (BR35H160FJ-WC) *2
Pd
mW
Power Dissipation
410 (BR35H160FVT-WC) *3
380 (BR35H160FVM-WC) *4
Tstg
-65~150
℃
Storage Temperature
Topr
-40~125
℃
Operating Temperature
Terminal Voltage
-
-0.3~Vcc+0.3
V
* Degradation is done at 4.5mW/℃(※1,2), 3.3mW/℃(※3), 3.1mW/℃(※4) for operation above 25℃
◇ RECOMMENDED OPERATING CONDITION
Parameter
Symbol
Rating
Supply Voltage
Vcc
2.5~5.5
Input Voltage
VIN
0~Vcc
Unit
V
V
REV. B
2/4
◇MEMORY CELL CHARACTERISTICS(Vcc=2.5~5.5V)
Specification
Parameter
Write/Erase Cycle
Data Retention
Min.
Test
Condition
Unit
Typ.
Max.
1,000,000
-
-
Cycle
Ta≦85℃
500,000
-
-
Cycle
Ta≦105℃
300,000
-
-
Cycle
Ta≦125℃
40
-
-
Year
Ta≦25℃
20
-
-
Year
Ta≦125℃
*1
*1
○Initial Data:Memory array FFh
*1 Not 100% TESTED
◇DC OPERATING CHARACTERISTICS
◇AC OPERATING CHARACTERISTICS
(Unless otherwise specified Ta=-40~125℃, CL=100pF)
(Unless otherwise specified Ta=-40~125℃, Vcc=2.5~5.5V)
Parameter
Symbol
Specification
Min. Typ. Max.
Unit
test condition
Parameter
Symbol
2.5V≦VCC≦5.5V
Min.
Typ.
Max.
Unit
“H” Input Voltage
VIH1
0.7xVcc
-
Vcc+0.3
V
2.5V≦Vcc≦5.5V
SCK clock Frequency
fSCK
-
-
5
“L” Input Voltage
VIL1
-0.3
-
0.3xVcc
V
2.5V≦Vcc≦5.5V
SCK High Time
tSCKWH
85
-
-
ns
“L” Output Voltage
VOL
0
-
0.4
V
IOL=2.1mA (Vcc=2.5V~5.5V)
SCK Low Time
tSCKWL
85
-
-
ns
“H” Output Voltage
V
IOH=-0.4mA (Vcc=2.5V~5.5V)
CS High Time
ns
MHz
VOH
Vcc-0.5
-
Vcc
tCS
85
-
-
Input Leakage Current
ILI
-10
-
10
μA VIN=0V~Vcc
CS Setup Time
tCSS
90
-
-
ns
Output Leakage Current
ILO
-10
-
10
μA VOUT=0V~Vcc , CSB=Vcc
CS Hold Time
tCSH
85
-
-
ns
ICC1
-
-
2
mA
ICC2
-
-
3
mA
ICC3
-
-
1.5
mA
Operating Current
Write
Operating Current
Read
ICC4
Standby Current
ISB
-
-
-
-
2
10
mA
Vcc=2.5V , fSCK=5MHz , tE/W=5ms
SCK Setup Time
tSCKS
90
-
-
ns
Byte Write,Page Write
SCK Hold Time
tSCKH
90
-
-
ns
Vcc=5.5V , fSCK=5MHz , tE/W=5ms
SI Setup Time
tDIS
20
-
-
ns
Byte Write,Page Write
SI Hold Time
tDIH
30
-
-
ns
Vcc=2.5V , fSCK=5MHz
Output Data Delay Time1
tPD1
-
-
70
ns
Read,Read Status Register
Output Data Delay Time2 (CL=30pF)
tPD2
-
-
55
ns
Vcc=5.5V , fSCK=5MHz
Output Hold Time
tOH
0
-
-
ns
Read,Read Status Register
Output Disable Time
Vcc=5.5V
SCK Rise Time
*1
SCK Fall Time
*1
Output Rise Time
*1
Output Fall Time
*1
tFO
μA CSB=Vcc
SCK=SI=Vcc or GND, SO=OPEN
○This product is not designed for protection against
○radioactive rays.
tOZ
-
-
100
ns
tRC
-
-
1
μs
tFC
-
-
1
μs
tRO
-
-
50
ns
-
-
50
ns
-
-
5
ms
tE/W
Write Cycle Time
※1 Not 100% TESTED
◇ BLOCK DIAGRAM
CSB
◇PIN No. / PIN NAME
1
8 VCC
VOLTAGE
INSTRUCTION DECODE
DETECTION
CONTROL CLOCK
GENERATION
SO
2
WRITE
HIGH VOLTAGE
INHIBITION
GENERATOR
7 NC
INSTRUCTION
REGISTER
NC
3
STATUS REGISTER
ADDRESS
REGISTER
11bit
ADDRESS
6 SCK
11bit
DECODER
16,384bit
EEPROM
READ/WRITE
DATA
GND
4
REGISTER
8bit
8bit
AMP
5 SI
Fig.1 BLOCK DIAGRAM
REV. B
PIN No.
1
2
3
4
5
6
7
8
PIN NAME
CSB
SO
NC
GND
SI
SCK
NC
VCC
3/4
◇NOTES FOR POWER SUPPLY
In order to prevent an inadvertent write, the device has the feature of P.O.R.
After the power is on, the device is in the write disable mode. P.O.R. works only during power up. The noise may force
the device write enable mode with CS=“H”during power ON/OFF. In the case of power up, keep the following
conditions to ensure to make the function of P.O.R.
tR
◇RECOMMENDED CONDITIONS OF tR, tOFF, Vbot
Vcc
tR
tOFF
Vbot
Below 10ms
Above 10ms
Below 0.3V
tOFF
Vbot
Below 100ms
Above 10ms
Below 0.2V
0
Fig.2
Vcc waveform
Please keep CS “H” during power ON/OFF.
The device is an active state during CS is low. The extraordinary function or data collaption may occur because of
noise etc., if power-up is done with CS “L”. In order to prevent above errors from happening, keep CS “H” (=Vcc)
during power ON. (The device does not receive any command during CS is high.)
It may continue at low Vcc by capacitance of Vcc line during power off.
Please keep CS “H” during power off because of the device may make malfunction and inadvertent write.
Vcc
(Good example)
CS follows Vcc. (CS is pull up to Vcc)
Vcc
GND
Vcc
CS
GND
Good
Bad
Fig.3 CS TIMING DURING POWER ON/OFF
(Bad example)
CS is low during power ON/OFF.
Please take more than 10ms between power ON and power OFF,
or the internal circuit is not always reset.
◇CAUTIONS ON USE
(1) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case
of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it
that conditions exceeding the absolute maximum ratings should not be impressed to LSI.
(2) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltages is lower than
that of GND terminal.
(3) Heat design
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.
(4) Terminal to terminal shortcircuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging
may destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal
and GND owing to foreign matter, LSI may be destructed.
(5) Strong electromagnetic field
Use in a strong electromagnetic field may cause malfunction, therefore, evaluated design sufficiently.
REV. B
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◇PHYSICAL DIMENSION
Product Name:BR35H160F-WC
5.0±0.2
8
7
6
Product Name:BR35H160FJ-WC
+6゜
MAX5.35 (include.BURR)
4゜ -4゜
5
16H
0.3MIN
0.9±0.15
6.2±0.3
4.4±0.2
16H
1
2
3
4
LOT NO.
LOT NO.
+0.1
0.17 -0.05
1.27
0.42±0.1
Drawing No. : EX111-5002
(UNIT:mm)
Drawing No. : EX112-5002
(UNIT:mm)
Fig.4-(a) PHYSICAL DIMENSION SOP-8 (BR35H160F-WC)
Fig.4-(b) PHYSICAL DIMENSION SOP-J8 (BR35H160FJ-WC)
Product Name: BR35H160FVT-WC
3.0±0.1
Product Name:BR35H160FVM-WC
2.9±0.1
+6゜
4゜ -4゜
MAX3.25 (include.BURR)
6
L6
6
2
3
5
5
H
1
2
3
1PIN MARK
4
LOT NO.
1
+0.05
0.525
0.145 -0.03
1.2MAX
0.1±0.05 1.0±0.05
0.75±0.05
0.08±0.05
0.475
0.5±0.15
0.29±0.15
0.6±0.2
4.0±0.2
2.8±0.1
1
7
16H
7
8
6.4±0.2
4.4±0.1
8
4°±4°
MAX3.35 (include.BURR)
+0.05
0.22 -0.04
Drawing No. :181-5002
(UNIT:mm)
Fig.4-(c) PHYSICAL DIMENSION MSOP8(BR35H160FVM-WC)
4
LOT NO.
0.145 +0.05
-0.03
1PIN MARK
0.65
1.0±0.2
0.11
1.5±0.1
0.595
0.08 S
0.245 +0.05
0.08 M
-0.04
Drawing No. :165-5002
(UNIT:mm)
Fig.4-(d) PHYSICAL DIMENSION TSSOP-B8(BR35H160FVT-WC)
REV. B
Notice
Notes
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R1010A
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