PHILIPS BLW30 Vhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW30
VHF power transistor
Product specification
September 1991
Philips Semiconductors
Product specification
VHF power transistor
FEATURES
• Emitter-ballasting resistors for an
optimum temperature profile
BLW30
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C in a common emitter test circuit.
MODE OF
OPERATION
• Excellent reliability
• Withstands full load mismatch.
f
(MHz)
c.w. class-B
175
12.5
PL
(W)
ηC
(%)
GP
(dB)
> 10
30
> 55
WARNING
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead 3⁄8 inch
SOT120 capstan envelope with a
ceramic cap. It is designed for
common emitter, class-B operation
mobile VHF transmitters with a supply
voltage of 12.5 V. All leads are
isolated from the stud.
PINNING - SOT120
PIN
VCE
(V)
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
PIN CONFIGURATION
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
halfpage
4
1
c
3
handbook, halfpage
b
MBB012
2
MSB056
Fig.1 Simplified outline and symbol.
September 1991
2
e
Philips Semiconductors
Product specification
VHF power transistor
BLW30
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
36
V
VCEO
collector-emitter voltage
open base
−
16
V
VEBO
emitter-base voltage
open collector
−
3
V
IC, IC(AV)
collector current
DC or average value
−
6
A
ICM
collector current
peak value
f > 1 MHz
−
18
A
Ptot
total power dissipation
RF operation;
f > 1 MHz;
Tmb = 25 °C
−
100
W
Tstg
storage temperature range
−65
150
°C
Tj
junction operating temperature
−
200
°C
MRA382
120
handbook,
halfpage
Ptot
(W)
100
II
80
I
60
40
20
0
0
20
40
60
80
100
120
o
Th ( C)
(I) Continuous RF operation (f > 1 MHz).
(II) Short time operation during mismatch
(f > 1 MHz).
Fig.2 Power/temperature derating curve.
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth j-mb(RF)
from junction to mounting base
Rth mb-h
from mounting base to heatsink
September 1991
CONDITIONS
Ptot = 100 W;
Tmb = 25 °C
3
MAX.
UNIT
1.75
K/W
0.45
K/W
Philips Semiconductors
Product specification
VHF power transistor
BLW30
CHARACTERISTICS
Tj = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter;
Ic = 10 mA
36
−
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base;
Ic = 25 mA
16
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector;
IE = 2 mA
3
−
−
V
ICES
collector-emitter leakage current
VBE = 0;
VCE = 16 V
−
−
10
mA
hFE
DC current gain
VCE = 5 V;
IC = 4 A
25
35
−
fT
transition frequency
VCE = 12.5 V;
IE = 4 A;
f = 500 MHz
−
1.6
−
GHz
Cc
collector capacitance
VCB = 12.5 V;
IE = Ie = 0;
f = 1 MHz
−
90
100
pF
Cre
feedback capacitance
VCE = 12.5 V;
IC = 0;
f = 1 MHz
−
60
70
pF
Cc-s
collector-stud capacitance
f = 1 MHz
−
2
−
pF
MRA378
MRA374.1
250
handbook,
halfpage
handbook, 50
halfpage
h
Cc
(pF)
FE
200
40
VCE =
12.5 V
150
30
VCE = 5 V
20
100
50
10
0
0
0
4
8
12
IC (A)
0
16
4
8
12
16
VCB (V)
IE = ie = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current, typical values.
September 1991
Fig.4
4
Collector capacitance as a function of
collector-base voltage, typical values.
Philips Semiconductors
Product specification
VHF power transistor
BLW30
MRA375
2
handbook, halfpage
fT
(GHz)
1.5
1
0.5
0
0
2
4
6
8
10
I E (A)
VCB = 12.5 V.
Fig.5
Transition frequency as a function of emitter
current, typical values.
September 1991
5
Philips Semiconductors
Product specification
VHF power transistor
BLW30
APPLICATION INFORMATION
RF performance at Tmb = 25 °C in a common emitter test circuit.
f
(MHz)
MODE OF OPERATION
c.w. class-B
VCE
(V)
175
PL
(W)
12.5
ηC
(%)
GP
(dB)
> 10
typ. 11
30
> 55
typ. 60
MRA376
16
MRA381
50
80
handbook, halfpage
handbook, halfpage
P
L
(W)
η
GP
(dB)
GP
(%)
η
12
40
60
30
40
8
20
20
4
10
0
10
20
30
40
P (W)
L
0
0
0
1
2
3
4
Class-B operation; VCE = 12.5 V; f = 175 MHz.
Class-B operation; VCE = 12.5 V; f = 175 MHz.
Fig.6
Fig.7
Gain and efficiency as functions of load
power, typical values.
5
6
P (W)
IN
Load power as a function of drive power,
typical values.
Ruggedness in class-B operation
The BLW30 is capable of withstanding a full load mismatch
corresponding to VSWR = 50:1 through all phases at rated
output power, up to a supply voltage of 15.5 V, and f =
175 MHz.
September 1991
6
Philips Semiconductors
Product specification
VHF power transistor
BLW30
handbook, full pagewidth
C1
L1
50 Ω
L4
C6
L8
L5
C3a
50 Ω
T.U.T.
C7
L6
C2
C3b
L2
C4
C5
R1
R2
L7
L3
MGP427
+VCC
Fig.8 Class-B test circuit at f = 175 MHz.
List of components (see test circuit)
COMPONENT
C1
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
film dielectric trimmer
2.5 to 20 pF
2222 809 07004
C2, C7
film dielectric trimmer
4 to 40 pF
2222 809 07008
C3a, C3b
500 V ceramic capacitor
47 pF
C4
ceramic capacitor
120 pF
C5
polyester capacitor
100 nF
C6
film dielectric trimmer
7 to 100 pF
L1
1⁄
L2
7 turns closely wound enamelled 0.5 mm
copper wire
L3, L7
grade 3B Ferroxcube wideband HF choke
L4, L5
stripline (note 1)
12 mm × 6 mm;
note 2
L6
31⁄2 turns closely wound enamelled
1.6 mm copper wire
int. dia. 6 mm;
leads 2 × 5 mm
L8
1 turn enamelled 1.6 mm copper wire
int. dia. 6 mm;
leads 2 × 5 mm
R1, R2
0.25 W carbon resistor
2
turn enamelled 1.6 mm copper wire
2222 809 07015
int. dia. 6 mm;
leads 2 × 5 mm
100 nH
int. dia. 3 mm;
leads 2 × 5 mm
4312 020 36640
10 Ω, 5%
Notes
1. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric, thickness 1⁄16 inch.
2. Taps for capacitors C3a and C3b are situated 5 mm from the transistor.
September 1991
7
Philips Semiconductors
Product specification
VHF power transistor
BLW30
150
handbook, full pagewidth
72
L7
L3
+VCC
C4
R1
L2
C1
C2
L1
C3a
C5
R2
L6
L4
L5
C6
L8
C7
C3b
rivet
MGP428
The circuit and components are situated on one side of an epoxy fibre-glass board; the other side is unetched
and serves as a ground plane. Earth connections are made by means of hollow rivets and copper straps under
the emitters, to provide a direct contact between the component side and the ground plane.
Fig.9 Component layout for 175 MHz class-B test circuit.
September 1991
8
Philips Semiconductors
Product specification
VHF power transistor
BLW30
MRA380
MRA379
3
4
handbook, halfpage
handbook, halfpage
ZL
(Ω)
Zi
3
(Ω)
2
RL
2
ri
1
1
0
xi
XL
-1
0
100
150
200
f (MHz)
-2
100
250
150
200
f (MHz)
250
Class-B operation; VCE = 12.5 V; PL = 30 W.
Class-B operation; VCE = 12.5 V; PL = 30 W.
Fig.10 Input impedance (series components) as a
function of frequency, typical values.
Fig.11 Load impedance (series components) as a
function of frequency, typical values.
MRA377
handbook,
GP halfpage
(dB)
15
10
handbook, halfpage
5
Zi
ZL
MBA451
0
100
150
200
f (MHz)
250
Class-B operation; VCE = 12.5 V; PL = 30 W.
Fig.12 Definition of transistor impedance.
September 1991
Fig.13 Power gain as a function of frequency,
typical values.
9
Philips Semiconductors
Product specification
VHF power transistor
BLW30
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT120A
D
A
Q
c
A
D1
N1
w1 M A
D2
N
M
W
N3
M1
X
H
detail X
b
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
D2
H
L
M
M1
N
N1
N3
Q
mm
5.97
4.74
5.90
5.48
0.18
0.14
9.73
9.47
8.39
8.12
9.66
9.39
27.44
25.78
9.00
8.00
3.41
2.92
1.66
1.39
12.83
11.17
1.60
0.00
3.31
2.54
4.35
3.98
0.065 0.505 0.063
0.055 0.440 0.000
0.130
0.100
0.171
0.157
inches 0.283
0.248
0.232 0.007
0.216 0.004
OUTLINE
VERSION
0.383 0.330 0.380 1.080
0.373 0.320 0.370 1.015
0.354 0.134
0.315 0.115
REFERENCES
IEC
JEDEC
EIAJ
w1
0.38
8-32
UNC
EUROPEAN
PROJECTION
0.015
ISSUE DATE
97-06-28
SOT120A
September 1991
W
10
Philips Semiconductors
Product specification
VHF power transistor
BLW30
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1991
11
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