TOSHIBA 2SK3844

2SK3844
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
2SK3844
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
•
Low drain-source ON resistance: RDS (ON) = 4.1 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 63 S (typ.)
•
Low leakage current: IDSS = 100 μA (max)(VDS = 60 V)
•
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
45
Pulse
(Note 1)
IDP
180
Drain power dissipation (Tc=25℃)
PD
45
W
JEDEC
Single pulse avalanche energy
(Note 2)
EAS
527
mJ
JEITA
Avalanche current
IAR
45
A
Repetitive avalanche energy (Note 3)
EAR
4.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Drain current
A
TOSHIBA
―
SC-67
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 353 μH, IAR = 45 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2SK3844
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-off current
IDSS
VDS = 60 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
⎯
⎯
V
V (BR) DSX
Drain-source breakdown voltage
ID = 10 mA, VGS = −20 V
35
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 23 A
⎯
4.1
5.8
mΩ
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 23 A
32
63
⎯
S
Input capacitance
Ciss
⎯
12400
⎯
Reverse transfer capacitance
Crss
⎯
700
⎯
Output capacitance
Coss
⎯
1100
⎯
⎯
18
⎯
⎯
45
⎯
⎯
35
⎯
⎯
200
⎯
⎯
196
⎯
⎯
148
⎯
⎯
48
⎯
Rise time
tr
VGS
ton
Switching time
Fall time
tf
Turn-off time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
ID = 23 A
10 V
0V
4.7 Ω
Turn-on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
RL = 1.3Ω
Gate threshold voltage
VOUT
VDD ∼
− 30 V
Duty <
= 1%, tw = 10 μs
VDD ∼
− 48 V, VGS = 10 V,ID = 45 A
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR1
⎯
⎯
⎯
45
A
(Note 1)
IDRP
⎯
⎯
⎯
180
A
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
VDSF
IDR = 45 A, VGS = 0 V
⎯
⎯
−1.5
V
Reverse recovery time
trr
⎯
67
⎯
ns
Reverse recovery charge
Qrr
IDR = 45 A, VGS = 0 V,
dIDR/dt = 50 A/μs
⎯
70
⎯
nC
Marking
K3844
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SK3844
ID – VDS
50
7 6
10
5.2
5.5
8
Common source
Tc = 25°C
Pulse test
7
10
Common Source
Tc = 25°C
Pulse test
6
5.7
8
80
5.5
(A)
(A)
40
ID – VDS
100
ID
Drain current
Drain current
ID
5
30
4.8
20
10
VGS = 4.5 V
60
5.2
40
5
20
4.8
VGS = 4.5 V
0
0
0.2
0.4
0.6
Drain−source voltage
0.8
VDS
0
1.0
0
(V)
0.4
0.8
VDS (V)
(A)
Drain−source voltage
ID
Drain current
25
10
Tc = −55°C
100
0
0
2
4
6
Gate−source voltage
VGS
0.8
0.6
0.4
45
0.2
ID = 11 A
0
8
0
(V)
23
4
8
Common source
VDS = 20 V
Pulse test
Drain−source ON resistance
RDS (ON) (mΩ)
(S)
⎪Yfs⎪
Forward transfer admittance
16
VGS
20
(V)
RDS (ON) − ID
100
25
100
10
1
1
12
Gate−source voltage
Tc = −55°C
100
(V)
Common source
Tc = 25°C
Pulse test
⎪Yfs⎪ − ID
1000
2.0
VDS – VGS
30
20
VDS
1.0
Common source
VDS = 20 V
Pulse test
40
1.6
Drain−source voltage
ID – VGS
50
1.2
Common source
Tc = 25°C
Pulse test
10
VGS = 10, 15 V
1
10
Drain current
100
ID
1
(A)
Drain current
3
100
10
ID
(A)
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2SK3844
RDS (ON) − Tc
IDR − VDS
100
IDR
8
ID = 45 A
23
6
11
4
2
0
−80
10
1
1
−40
3
5
10
(A)
Common source
VGS = 10 V
Pulse test
Drain reverse current
Drain−source ON resistance
RDS (ON) (mΩ)
10
0
40
Case temperature
80
Tc
120
160
VGS = 0 V
Common source
Tc = 25°C
Pulse test
0
(°C)
0.2
0.4
0.6
0.8
Drain−source voltage
1.0
VDS
1.2
(V)
Capacitance – VDS
Vth − Tc
100000
Vth (V)
Ciss
10000
Gate threshold voltage
Coss
1000
Common source
VGS = 0 V
Crss
f = 1 MHz
1
10
Drain−source voltage
3
2
1
0
−80
100
VDS
4
(V)
40
80
120
Tc
160
(°C)
Dynamic input/output characteristics
25
50
40
Drain−source voltage
30
20
10
VDS
(V)
VDS (V)
(W)
50
PD
0
Case temperature
PD − Tc
Drain power dissipation
−40
20
40
30
15
VDD = 12 V
24V
20
VGS
48V
10
10
Common source
ID = 45 A
5
Tc = 25°C
VGS
Tc = 25°C
100
0.1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
Gate−source voltage
Capacitance
C
(pF)
5
Pulse test
0
0
40
80
Case temperature
120
Tc
0
160
(°C)
0
80
160
Total gate charge
4
0
320
240
Qg
(nC)
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2SK3844
rth − tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01 0.01
t
T
Single pulse
Duty = t/T
Rth (ch-c) = 2.78°C/W
0.001
10 μ
100 μ
1m
10 m
Pulse width
100 m
1
tw (s)
EAS – Tch
Safe operating area
1000
600
ID max (Pulse) *
100
ID max (Continuous)
EAS (mJ)
300
100 μs *
1ms *
Avalanche energy
ID
(A)
500
Drain current
10
30
10
DC Operation
Tc = 25°C
5
500
400
300
200
100
3
0
25
1
0.5
* Single nonrepetitive pulse
Tc = 25°C
0.3 Curves
linearly
0.1
must
be
with
increase
50
derated
in
temperature.
1
Drain−source voltage
75
100
Channel temperature (initial)
15 V
VDSS max
10
VDS
IAR
VDD
(V)
Test circuit
RG = 25 Ω
VDD = 25 V, L = 353 μH
5
150
(°C)
BVDSS
0V
100
125
Tch
VDS
Wave form
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
⎝ VDSS VDD ⎠
2006-11-17
2SK3844
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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