BCW66F / BCW66G / BCW66H 0.8A , 75V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 Complementary to BCW68 A L 3 MARKING Part Number 3 C B Top View Marking Code 1 1 BCW66F EF BCW66G EG BCW66H EH 2 K E 2 D F PACKAGE INFORMATION Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. Package MPQ Leader Size SOT-23 3K 7 inch H G A B C D E F J REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 75 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 800 mA Collector Power Dissipation PC 200 mW TJ, TSTG 150, -55~150 °C Junction, Storage Temperature http://www.SeCoSGmbH.com/ 02-Jan-2013 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 BCW66F / BCW66G / BCW66H 0.8A , 75V NPN Plastic Encapsulated Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO 75 - - V IC=10µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 45 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=10µA, IC=0 Collector Cut-Off Current ICBO - - 0.02 µA VCB=45V, IE=0 Emitter Cut-Off Current IEBO - - 0.02 µA VEB=4V, IC=0 35 - - 50 - - BCW66H 80 - - BCW66F 75 - - 110 - - BCW66H 180 - - BCW66F 100 - 250 160 - 400 BCW66H 250 - 630 BCW66F 35 - - 60 - - 100 - - - - 0.3 Parameter BCW66F BCW66G BCW66G DC Current Gain 1 BCW66G BCW66G hFE (1) hFE (2) hFE (3) hFE (4) BCW66H Collector to Emitter Saturation Voltage VCE(sat) Test Conditions VCE=10V, IC=0.1mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IC=500mA IC=100mA, IB=10mA V - - 0.7 VBE(sat) - - 2 V fT 100 - - MHz Collector output capacitance Cob - - 12 pF VCB=10V, IE=0, f=1MHz Input Capacitance Cib - - 80 pF VEB=0.5V, IE=0, f=1MHz Noise Figure NF - - 10 dB VCE=5V, IC=0.2mA, f=1KHz, RS=1KΩ, BW=200Hz Base to Emitter Saturation Voltage Transition Frequency IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=20mA, f=100MHz Note: 1. Pulse test. http://www.SeCoSGmbH.com/ 02-Jan-2013 Rev. A Any changes of specification will not be informed individually. Page 2 of 2