TPCF8302 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8302 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.) • High forward transfer admittance: |Yfs| = 6.2 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Gate-source voltage VGSS ±10 V Drain current DC (Note 1) ID −3.0 Pulse (Note 1) IDP −12 PD (1) 1.35 PD (2) 1.12 Single-device operation (Note 3a) Drain power dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single pulse avalanche energy (Note 4) A 0.53 PD (2) 0.33 ― JEITA ― TOSHIBA 2-3U1B Weight: 0.011 g (typ.) W PD (1) JEDEC EAS 0.58 mJ Avalanche current IAR −1.5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Circuit Configuration 8 7 6 5 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 TPCF8302 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 92.6 Rth (ch-a) (2) 111.6 Rth (ch-a) (1) 235.8 Rth (ch-a) (2) 378.8 Unit °C/W °C/W Marking (Note 6) Lot code (month) Part No. (or abbreviation code) Pin #1 Lot No. F5B Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) 25.4 25.4 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −1.5 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: ● on the lower left of the marking indicates Pin 1. 2 2006-11-16 TPCF8302 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Symbol IGSS Test Condition VGS = ±10V, VDS = 0 V Min Typ. Max Unit ⎯ ⎯ ±10 μA μA IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 10 V −10 ⎯ ⎯ Vth VDS = −10 V, ID = −200 μA −0.5 ⎯ −1.2 RDS (ON) VGS = −2.0 V, ID = −1.5 A ⎯ 100 200 RDS (ON) VGS = −2.5 V, ID = −1.5 A ⎯ 68 95 RDS (ON) VGS = −4.5 V, ID = −1.5 A ⎯ 44 59 Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.5 A 3.1 6.2 ⎯ Input capacitance Ciss ⎯ 800 ⎯ Reverse transfer capacitance Crss ⎯ 120 ⎯ Output capacitance Coss ⎯ 160 ⎯ ⎯ 6.2 ⎯ ⎯ 15 ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-on time ton Fall time Turn-off time Total gate charge (gate-source plus gate-drain) tf toff Qg Gate-source charge1 Qgs1 Gate-drain (“miller”) charge Qgd −5 V 4.7 Ω Switching time ID = −1.5 A VOUT 0V RL = 6.7 Ω Drain cut-off current VDD ∼ − −10 V < Duty = 1%, tw = 10 μs VDD ∼ − −16 V, VGS = −5 V, ID = −3 A V V mΩ S pF ns ⎯ 17 ⎯ ⎯ 51 ⎯ ⎯ 11 ⎯ ⎯ 1.1 ⎯ ⎯ 3.3 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −12 A ⎯ ⎯ 1.2 V VDSF IDR = −3.0 A, VGS = 0 V 3 2006-11-16 TPCF8302 ID – VDS -5 -2.5 -10 -6 -1.8 -2.0 -10 Common source Ta = 25°C Pulse Test -2.5 -3.0 -3.0 -8 -3 -1.6 -2 -6 (A) ID Common source Ta = 25°C Pulse Test Drain current Drain current ID (A) -4 ID – VDS -10 -2.0 -6 -1.8 -4 -1.6 -2 -1 VGS = -1.4 VGS = -1.4 V 0 0 -0.2 -0.4 -0.6 Drain-source voltage -0.8 VDS 0 0 -1.0 -1.0 (V) -2.0 -3.0 Drain-source voltage ID – VGS VDS Common source (V) Pulse Test Ta = 25℃ -1.6 Pulse Test VDS (A) Drain-source voltage ID Drain current VDS = -10 V -3 -2 Ta = −55°C 100 25 0 0 (V) VDS – VGS Common source -1 -5.0 -2.0 -5 -4 -4.0 -1 -2 Gate-source voltage VGS -1.2 -0.8 -0.4 0 0 -3 (V) -1.5 -0.75 ID = -3A -2 -4 -6 Gate-source voltage ⎪Yfs⎪ – ID VGS -8 -10 (V) RDS (ON) – ID 100 1000 Common Source 10 Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) Ta = 25°C Ta = −55°C 100 25 1 Common Source Pulse Test VGS = -2.0V 100 -2.5 -4.5 VDS = -10 V 0.1 0.1 Pulse Test -1 Drain current 10 0.1 -10 ID (A) -1 -10 Drain current ID (A) 4 2006-11-16 TPCF8302 RDS (ON) – Ta IDR – VDS 160 -10 Common Source VGS = -2.0V Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) (m Ω) 120 -10 ID = -3A Pulse Test -1.5A,-0.75A VGS = -2.5V 80 ID = -3A,-1.5A,-0.75A VGS = -4.5V 40 ID = -3A,-1.5A,-0.75A -3.0 -5 -5.0 -1.0 -3 VGS = 0 V -1 -0.5 -0.3 Common Source Ta = 25°C Pulse Test 0 −80 −40 0 40 80 120 -0.1 0 160 0.2 Ambient temperature Ta (°C) 0.4 0.6 Drain-source voltage Capacitance – VDS 1.0 0.8 VDS 1.2 (V) Vth – Ta 10000 -2.0 Gate threshold voltage Vth (V) Capacitance C (pF) -1.6 Ciss 1000 Coss 100 Crss Common Source -1.2 -0.8 Common Source VDS = -10 V -0.4 VGS = 0 V ID = -200μA f = 1 MHz Pulse Test Ta = 25°C 10 -0.1 -1 -3 -5 Drain-source voltage -10 VDS 0 −80 -30 -50 -100 −40 (V) 40 80 120 160 Ambient temperature Ta (°C) Dynamic input / output characteristics PD – Ta 2.0 0 -20 Device mounted on a glass-epoxy board (a) (Note 2a) -10 (1) (4) Single-device value at dual operation (Note 3b) ｔ＝5S 1.2 -16 VDS (2) 0.8 (3) 0.4 VGS VDD = -16V VDS (3) Single-device operation (Note 3a) VDD=-4V -12 -8 -4 Common source -4 -16 -4 ID = -3 A Ta = 25°C (4) 0 0 -6 -8 -8 -8 -2 Gate-source voltage Device mounted on a glass-epoxy board (b) (Note 2b) Drain-source voltage Drain power dissipation PD (W) (V) (2) Single-device value at dual operation (Note 3b) 1.6 VGS (V) (1) Single-device operation (Note 3a) Pulse Test 40 80 120 160 0 0 200 Ambient temperature Ta (°C) 4 8 12 0 16 Total gate charge Qg (nC) 5 2006-11-16 TPCF8302 rth – tw 1000 (4) Single pulse (3) Transient thermal impedance rth (°C/W) (2) (1) 100 10 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe Operating Area Drain current ID (A) 100 ID max (pulse) * 100 μs * 10 1 ms * 1 ※ Single pulse Ta=25℃ Curves must be derated linearly with VDSS max increase in temperature. 0.1 0.1 1 Drain-source voltage 10 100 VDS (V) 6 2006-11-16 TPCF8302 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-16