2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 kΩ) VDGR 900 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 9 Pulse (Note 1) IDP 27 Drain power dissipation (Tc = 25°C) PD 150 W Single pulse avalanche energy (Note 2) EAS 778 mJ Avalanche current IAR 9 A Repetitive avalanche energy (Note 3) EAR 15 mJ TOSHIBA Channel temperature Tch 150 °C Weight: 4.6 g (typ.) Storage temperature range Tstg −55~150 °C Drain current A 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE JEDEC ― JEITA SC-65 2−16C1B Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 0.833 °C/W Thermal resistance, channel to ambient Rth (ch-a) 50 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. 1 Note 2: VDD = 90 V, Tch = 25°C, L = 17.6 mH, RG = 25 Ω, IAR = 9 A Note 3: Repetitive rating: pulse width limited by max junction temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-13 2SK3878 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Typ. Max Unit VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 720 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cutoff current Drain-source breakdown voltage Min IGSS Gate leakage current Drain-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 900 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 4 A ⎯ 1.0 1.3 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 15 V, ID = 4 A 3.5 7.0 ⎯ S Input capacitance Ciss ⎯ 2200 ⎯ Reverse transfer capacitance Crss ⎯ 45 ⎯ Output capacitance Coss ⎯ 190 ⎯ ⎯ 25 ⎯ ⎯ 65 ⎯ ⎯ 20 ⎯ ⎯ 120 ⎯ ⎯ 60 ⎯ ⎯ 34 ⎯ ⎯ 26 ⎯ Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz tr 0V ton 4.7 Ω Turn-on time Switching time Fall time tf Turn-off time VOUT RL = 100 Ω Duty < = 1%, tw = 10 μs toff Total gate charge (gate-source plus gate-drain) ID = 4 A 10 V VGS Qgs Gate-drain (“Miller”) charge Qgd ns VDD ∼ − 400 V Qg Gate-source charge pF VDD ∼ − 400 V, VGS = 10 V, ID = 9 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 9 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 27 A (Note 1) Forward voltage (diode) VDSF IDR = 9 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 9 A, VGS = 0 V, ⎯ 1.4 ⎯ μs Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 16 ⎯ μC Marking TOSHIBA K3878 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-13 2SK3878 ID – VDS ID – VDS 20 COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST 15 8 10 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 10 6 5.5 5.25 6 5 4 4.75 2 VGS = 4.5 V 16 15 10 12 6 5.5 8 5 4 VGS = 4.5 V 0 0 2 4 6 8 0 10 0 DRAIN−SOURCE VOLTAGE VDS (V) 4 8 DRAIN−SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) 16 25 8 Tc = −55°C 100 4 0 0 2 4 6 8 GATE−SOURCE VOLTAGE VGS 8 4.5 4 2.3 0 4 8 12 16 20 (V) RDS (ON) − ID 10 COMMON SOURCE DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) ID = 9 A GATE−SOURCE VOLTAGE VGS COMMON SOURCE VDS = 20 V PULSE TEST Tc = −55°C 100 25 1 12 (V) 10 1 0.1 COMMON SOURCE Tc = 25°C PULSE TEST 16 0 10 ⎪Yfs⎪ − ID 100 20 VDS – VGS 20 COMMON SOURCE VDS = 20 V PULSE TEST 12 16 DRAIN−SOURCE VOLTAGE VDS (V) ID – VGS 20 12 10 Tc = 25°C PULSE TEST VGS = 10 V 1 0.1 100 DRAIN CURRENT ID (A) 1 10 100 DRAIN CURRENT ID (A) 3 2006-11-13 2SK3878 RDS (ON) − Tc IDR − VDS 100 COMMON SOURCE VGS = 10 V PULSE TEST 4 DRAIN REVERSE CURRENT IDR (A) 3 ID = 9 A 2 4.5 2.3 1 0 −80 −40 0 40 80 CASE TEMPERATURE 120 COMMON SOURCE Tc = 25°C PULSE TEST 10 1 1 5 VGS = 0 V 3 0.1 160 10 −0.4 0 Tc (°C) −0.8 C − VDS Vth − Tc Vth (V) 1000 GATE THRESHOLD VOLTAGE Coss 100 Crss COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 1 0.1 1 10 4 3 2 1 COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST 0 −80 100 −40 DRAIN−SOURCE VOLTAGE VDS (V) 200 500 DRAIN−SOURCE VOLTAGE VDS (V) PD (W) 40 160 120 80 40 40 80 120 CASE TEMPERATURE 80 120 160 Tc (°C) DYNAMIC INPUT/OUTPUT CHARACTERISTICS PD − Tc DRAIN POWER DISSIPATION 0 CASE TEMPERATURE 160 Tc 400 (°C) VDS 300 VDS = 400 V 200 20 16 12 100 200 8 VGS 100 0 0 200 COMMON SOURCE ID = 9 A Tc = 25°C PULSE TEST (V) CAPACITANCE C (pF) Ciss 0 0 −1.6 5 10000 10 −1.2 DRAIN−SOURCE VOLTAGE VDS (V) 4 20 40 60 80 GATE−SOURCE VOLTAGE VGS DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) 5 0 100 TOTAL GATE CHARGE Qg (nC) 4 2006-11-13 2SK3878 rth − tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-a) 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t SINGLE PULSE T Duty = t/T Rth (ch-c) = 0.833°C/W 0.001 10 μ 100 μ 1m 10 m 100 m PULSE WIDTH tw 1 (S) SAFE OPERATING AREA EAS – Tch 100 1000 AVALANCHE ENERGY EAS (mJ) DRAIN CURRENT ID (A) ID max (PULSE) * 10 100 μs * ID max (CONTINUOUS) 1 ms * DC OPERATION Tc = 25°C 1 0.1 * SINGLE NONPETITIVE PULSE Tc = 25°C Curves must be derated linearly with 10 100 1000 800 600 400 200 0 25 VDSS max increase in temperature. 0.01 1 10 10000 50 75 100 CHANNEL TEMPERATURE (INITIAL) 125 150 Tch (°C) DRAIN−SOURCE VOLTAGE VDS (V) 15 V BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 17.6 mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-13 2SK3878 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-13