DMP4065S 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits ID max TA = 25°C RDS(ON) max 80mΩ @ VGS = -10V -3.4A 100mΩ @ VGS = -4.5V -3.0A -40V Description and Applications Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors SOT23 Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) D D G S G S Top View Internal Schematic Top View Ordering Information (Note 4) Notes: Part Number Case Packaging DMP4065S-7 SOT23 3,000/Tape & Reel DMP4065S-13 SOT23 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information P65 Date Code Key Year Code Month Code 2014 B Jan 1 YM SOT23 P65 = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: B = 2014) M = Month (ex: 9 = September) 2015 C Feb 2 DMP4065S Document number: DS37646 Rev. 2 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov Dec N D February 2015 © Diodes Incorporated DMP4065S Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Steady State Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -40 ±20 -2.4 -1.9 ID Units V V A IDM -3.4 -2.7 -20 Symbol PD RθJA PD RθJA TJ, TSTG Value 0.72 171 1.4 90 -55 to +150 ID Pulsed Drain Current A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Unit W °C/W W °C/W °C Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -40 - - -1.0 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 - -3.0 V RDS (ON) - 64 85 80 100 mΩ VSD - -0.7 -1.2 V VDS = VGS, ID = -250μA VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -3.3A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 587 88 40 4 6.1 12.2 1.8 2.4 3.6 2.9 36.3 15.3 - pF pF pF Ω nC nC nC nC ns ns ns ns VDS = -20V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -20V, ID = -4.2A VDD = -15V, VGS = -10V, ID = -1.0A, RG = 6Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP4065S Document number: DS37646 Rev. 2 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP4065S 15 15 Vgs = -10.0V Vgs = -5.0V T A =-55°C VDS= -5V Vgs = -3.5V 12 ID, DRAIN CURRENT (A) 12 ID , DRAIN CURRENT (A) TA =150°C 9 Vgs = -3.0V 6 Vgs = -2.5V T A =25°C TA =125°C 9 T A =85°C 6 3 3 Vgs = -2.0V 0 1 2 3 4 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0 5 0.5 0.18 0.45 I R, Reverse Leakage Current ( Ω) 0.2 0.16 0.14 0.12 VGS = -4.5 0.1 0.08 0.06 VGS = -10V 0.04 0.02 0 0 3 4 1 2 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0 5 VDS= -4.5V 0.4 ID = -4.2A 0.35 0.3 0.25 0.2 0.15 0.1 ID = -3.3A 0.05 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 0 0.2 0.18 0.14 TA =150°C T A =125°C 0.1 TA =85°C 0.08 0.06 0.04 2 4 6 8 10 12 14 16 18 VGS , GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 VGS = -4.5V 0.16 0.12 0 1.8 RD S(ON ), DRAIN-SOURCE ON-RESISTANCE (NO RMALIZED) RD S(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) RD S(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 T A =25°C T A =-55°C VGS = -10V 1.6 I D = -10A 1.4 VGS = -5V I D = -5A 1.2 1 0.8 0.02 0 0 3 6 9 12 I D, DRAIN-CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP4065S Document number: DS37646 Rev. 2 - 2 15 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP4065S 2 VGS(th ), GATE THRESHOLD VOLTAGE (V) R DS(ON), DRAIN-SOURCE ON-RESI STANCE (Ω) 0.15 0.12 VGS = -5.0V I D = -5.0A 0.09 VGS = -10V 0.06 ID = -10A 0.03 1.8 1.6 I D = -1mA 1.4 1.2 ID = -250µA 1 0.8 0.6 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( °C) Figure 7 On-Resistance Variation with Temperature 15 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Junction Temperature 1000 T A = 85°C CT , JUNCTION CAPACITANCE (pF) f = 1MHz I S, SOURCE CURRENT (A) 12 T A = 125°C TA = 25°C 9 T A = 150°C T A = -55°C 6 3 0 0 150 0.3 0.6 0.9 1.2 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current Ciss 100 Coss Crss 10 1.5 0 5 10 15 20 25 30 35 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 100 10 PW = 100µs 8 -ID , DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) RDS(on) Limited VDS = -20V 6 I D = -4.2A 4 2 0 0 10 1 PW = DC PW = 10s PW = 1s 0.1 PW = 100ms TJ (m ax ) = 150°C 0.01 TA = 25°C 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMP4065S Document number: DS37646 Rev. 2 - 2 12 PW = 10ms PW = 1ms VGS = 10V Single Pulse 0.001 DUT on 1 * MRP Board 0.1 4 of 6 www.diodes.com 1 10 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMP4065S 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA (t) = r(t) * R JA RJA = 173°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7° H K1 GAUGE PLANE 0.25 J K a M A L1 L C B D SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 8° All Dimensions in mm G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMP4065S Document number: DS37646 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP4065S IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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