2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z 4-V gate drive １．６ z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.) ２．３ (VDS = −10 V, ID = −1 mA) １ Maximum Ratings (Ta = 25°C) ０．８ MAX． １．1 MAX． Symbol Rating Unit Drain−source voltage VDSS −60 V Drain−gate voltage (RGS = 20 kΩ) VDGR −60 V Gate−source voltage VGSS ±20 V ID −5 A IDP −20 A Drain power dissipation PD 20 W Single pulse avalanche energy (Note 2) EAS 40.5 mJ Avalanche current IAR −5 A Repetitive avalenche energy (Note 3) EAR 2 mJ Drain current (Note 1) Pulse(Note 1) Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W ５．７ ４．１±０．２ ２．３ ０．６ MAX ２ ３ ２．３±０．２ z Enhancement mode: Vth = −0.8 to −2.0 V DC １．１±０．２ ０．９ z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V) Characteristics ０．６ MAX． ５．５±０．２ ６．５±０．２ ０．６±０．１５ ０．６±０．１５ JEDEC ― JEITA ― TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-06-30 2SJ681 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cut−off current IDSS VDS = −60 V, VGS = 0 V — — −100 µA V (BR) DSS ID = −10 mA, VGS = 0 V −60 — — V V (BR) DSX ID = −10 mA, VGS = 20 V −35 — — V Vth VDS = −10 V, ID = −1 mA −0.8 — −2.0 V Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time — 0.16 0.25 — 0.12 0.17 VDS = −10 V, ID = −2.5 A 2.5 5.0 — — 700 — — 60 — — 90 — — 14 — — 24 — — 14 — — 95 — — 15 — — 11 — — 4 — VDS = −10 V, VGS = 0 V, f = 1 MHz Turn−on time Fall time ID = −2.5 A 0V VGS −10 V tr ton 4.7 Ω Rise time VGS = −4 V, ID = −2.5 A VGS = −10 V, ID = −2.5 A RL = 12 Ω tf Turn−off time Total gate charge (Gate−source plus gate−drain) toff Output Duty < = 1%, tw = 10 µs Qgs Gate−drain (“miller”) charge Qgd S pF ns VDD ∼ − −30 V Qg Gate−source charge Ω VDD ≈ −48 V, VGS = −10 V, ID = −5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — −5 A Pulse drain reverse current (Note 1) IDRP — — — −20 A Forward voltage (diode) VDSF IDR = −5 A, VGS = 0 V — — 1.7 V Reverse recovery time trr IDR = −5 A, VGS = 0 V dlDR / dt = 50 A / µS — 40 — ns — 32 — nC Reverse recovery charge Qrr Marking J681 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-06-30 2SJ681 ID – VDS −10 −6 −4. ID – VDS −3.5 Common source Tc = 25°C Pulse test −8 −4 −10 −3 Drain current ID (A) Drain current ID (A) −5 −3 −2.8 −2 VGS = −2.5V −1 0 0 −0.4 −0.8 −1.2 Drain−source voltage −1.6 −8 −6 −4 −8 −6 −4 −3 −2 VGS = −2.5 V 0 VDS (V) −2 −4 ID – VGS VDS (V) (V) VDS −6 25 −4 −2 100 0 −2 −1 Tc = −55°C −3 −4 −1.2 −0.8 −5 −0.4 0 −5 −2.5 ID = −1.2 A 0 (V) −4 −8 10 Common source VDS = −10 V Pulse test Tc = −55°C 100 25 1 0.1 −0.1 −1 −16 −20 (V) RDS (ON) − ID 0.5 Drain−source ON resistance RDS (ON) (Ω) 100 −12 Gate−source voltage VGS ⎪Yfs⎪ − ID (S) −10 Common source Tc = 25°C Pulse test −1.6 Drain−source voltage Drain current ID (A) Common source VDS = −10 V Pulse test −8 −8 VDS – VGS −2.0 Gate−source voltage VGS Forward transfer admittance ⎪Yfs⎪ −6 Drain−source voltage −10 0 Common source Tc = 25°C Pulse test −3.5 0 −2.0 −10 −10 Common source Tc = 25°C Pulse test 0.4 0.3 0.2 −4 V 0.1 VGS = −10V 0 −100 0 Drain current ID (A) −2 −4 −6 −8 −10 Drain current ID (A) 3 2006-06-30 2SJ681 RDS (ON) − Tc IDR − VDS 10 Common source Pulse test −0.3 Drain reverse current IDR (A) Drain−source ON resistance RDS (ON) (Ω) −0.4 ID = −5 A −2.5 −1.2 −0.2 −5 VGS = −4 V −1.2 −2.5 −0.1 VGS = −10 V 0 −80 Common source Tc = 25°C Pulse test −3 0 40 80 120 Case temperature Tc −1 1 0.1 −40 −10 −5 160 0 (°C) 0.2 0.4 VGS = 0 V 0.6 0.8 Drain−source voltage 1.0 1.2 VDS (V) Capacitance – VDS Vth − Tc Common source −2.0 Gate threshold voltage Vth (V) Tc = 25°C 1000 Ciss 100 Coss Crss 10 −0.1 −1 −10 Drain−source voltage Common source VDS = −10 V ID = 1 mA Pulse test −1.6 −1.2 −0.8 −0.4 0 −80 −100 −40 40 80 Case temperature VDS (V) Tc 160 (°C) −25 −50 40 VDS Common source (V) Drain−source voltage VDS 30 20 10 0 120 Dynamic input/output characteristics PD − Tc Drain power dissipation PD (W) 0 ID = −5 A −40 40 80 160 120 Case temperature Tc 200 −30 −15 −12V −20 −24V 4 −10 VDD = −48 V −10 −5 VGS 0 5 10 15 Total gate charge (°C) −20 Pulse test 0 0 Ta = 25°C (V) Capacitance C (pF) VGS = 0 V f = 1 MHz 20 Qg 25 30 Gate−source voltage VGS 10000 0 (nC) 2006-06-30 2SJ681 rth − tw 1 rth (t)/Rth (ch-c) Normalized transient thermal impedance 10 Duty = 0.5 0.2 Single Pulse PDM 0.1 0.1 t 0.05 T 0.02 0.01 0.01 10 µ Duty = t/T Rth (ch-c) = 6.25°C/W 100 µ 1m 10 m Pulse width 100 m tw 1 (s) Safe operating area EAS – Tch 50 (mJ) −100 EAS ID max (continuous) 100 µs * 1 ms * Avalanche energy Drain current ID (A) ID max (pulsed) * −10 DC operation Tc = 25°C −1 10 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.1 −0.1 −1 Drain-source voltage VDSS max −10 40 30 20 10 0 25 −100 50 75 100 125 Channel temperature (initial) Tch 150 (°C) VDS (V) BVDSS 0V IAR −15 V VDD Wave form Test circuit RG = 25 Ω VDD = −25 V, L = 2.2 mH 5 VDS Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V DD ⎠ ⎝ VDSS 2006-06-30 2SJ681 RESTRICTIONS ON PRODUCT USE 060116EAA • The information contained herein is subject to change without notice. 021023_D • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. 021023_A • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 021023_B • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 021023_C 6 2006-06-30