ATMEL AT28BV64-30SI 64k 8k x 8 battery-voltage cmos e2prom Datasheet

AT28BV64
Features
•
•
•
•
•
•
•
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2.7V to 3.6V Supply
Full Read and Write Operation
Low Power Dissipation
8 mA Active Current
50 µA CMOS Standby Current
Read Access Time - 300 ns
Byte Write - 3 ms
Direct Microprocessor Control
DATA Polling
READY/BUSY Open Drain Output
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
64K (8K x 8)
Battery-Voltage
CMOS
E2PROM
Description
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable
Read Only Memory specifically designed for battery powered applications. Its 64K of
memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the device offers access times to 200 ns with power
dissipation less than 30 mW. When the device is deselected the standby current is
less than 50 µA.
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Fol(continued)
Pin Configurations
PDIP, SOIC Top View
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
RDY/BUSY
Ready/Busy Output
NC
No Connect
DC
Don’t Connect
PLCC Top View
AT28BV64
TSOP Top View
0493A
2-127
Description (Continued)
lowing the initiation of a write cycle, the device will go to a
busy state and automatically clear and write the latched
data using an internal control timer. The device includes
two methods for detecting the end of a write cycle, level
detection of RDY/BUSY and DATA polling of I/O7. Once
the end of a write cycle has been detected, a new access
for a read or write can begin.
Atmel’s 28BV64 has additional features to ensure high
quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of
E2PROM are available for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias................. -55°C to +125°C
Storage Temperature...................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to VCC + 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
2-128
AT28BV64
*NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
AT28BV64
Device Operation
READ: The AT28BV64 is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual line
control gives designers increased flexibility in preventing
bus contention.
BYTE WRITE: Writing data into the AT28BV64 is similar
to writing into a Static RAM. A low pulse on the WE or CE
input with OE high and CE or WE low (respectively) initiates a byte write. The address location is latched on the
falling edge of WE (or CE); the new data is latched on the
rising edge. Internally, the device performs a self-clear before write. Once a byte write has been started, it will automatically time itself to completion. Once a programming
operation has been initiated and for the duration of tWC, a
read operation will effectively be a polling operation.
DATA POLLING: The AT28BV64 provides DATA
POLLING to signal the completion of a write cycle. During
a write cycle, an attempted read of the data being written
results in the complement of that data for I/O7 (the other
outputs are indeterminate). When the write cycle is finished, true data appears on all outputs.
WRITE PROTECTION: Inadvertent writes to the device
are protected against in the following ways. (a) VCC
sense— if VCC is below 1.8V (typical) the write function is
inhibited. (b) VCC power on delay— once VCC h a s
reached 2.0V the device will automatically time out 10 ms
(typical) before allowing a byte write. (c) Write Inhibit—
holding any one of OE low, CE high or WE high inhibits
byte write cycles.
READY/BUSY: Pin 1 is an open drain READY/BUSY
output that can be used to detect the end of a write cycle.
RDY/BUSY is actively pulled low during the write cycle
and is released at the completion of the write. The open
drain connection allows for OR-tying of several devices to
the same RDY/BUSY line.
2-129
DC and AC Operating Range
AT28BV64-30
Com.
Operating
Temperature (Case)
0°C - 70°C
Ind.
-40°C - 85°C
VCC Power Supply
2.7V to 3.6V
Operating Modes
Mode
CE
OE
WE
I/O
Read
VIL
VIL
VIH
DOUT
VIL
VIH
VIL
DIN
VIH
(1)
Write
(2)
Standby/Write Inhibit
X
X
Write Inhibit
X
X
VIH
Write Inhibit
X
VIL
X
Output Disable
X
VIH
X
High Z
High Z
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
DC Characteristics
Symbol
Parameter
Condition
Min
Max
Units
ILI
Input Load Current
VIN = 0V to VCC + 1.0V
5
µA
ILO
Output Leakage Current
VI/O = 0V to VCC
5
µA
ISB
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC + 1.0V
50
µA
ICC
VCC Active Current AC
f = 5 MHz; IOUT = 0 mA; CE = VIL
8
mA
VIL
Input Low Voltage
0.6
V
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
2-130
AT28BV64
2.0
V
IOL = 1 mA
0.3
V
IOL = 2 mA for RDY/BUSY
0.3
V
IOH = -100 µA
2.0
V
AT28BV64
AC Read Characteristics
AT28BV64-30
Symbol
Parameter
tACC
Min
Max
Units
Address to Output Delay
300
ns
tCE
(1)
CE to Output Delay
300
ns
tOE
(2)
OE to Output Delay
0
150
ns
tDF
(3, 4)
CE or OE High to Output Float
0
60
ns
Output Hold from OE, CE or Address,
whichever occurred first
0
tOH
ns
AC Read Waveforms (1, 2, 3, 4)
Notes: 1. CE may be delayed up to tACC - tCE after the address
transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling
edge of CE without impact on tCE or by tACC - tOE
after an address change without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first
(CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
Output Test Load
tR, tF < 20 ns
Pin Capacitance (f = 1 MHz, T = 25°C) (1)
CIN
COUT
Note:
Typ
Max
Units
Conditions
4
6
pF
VIN = 0V
8
12
pF
VOUT = 0V
1. This parameter is characterized and is not 100% tested.
2-131
AC Write Characteristics
Symbol
Parameter
Min
tAS, tOES
Address, OE Set-up Time
10
ns
tAH
Address Hold Time
100
ns
tWP
Write Pulse Width (WE or CE)
150
tDS
Data Set-up Time
100
ns
tDH, tOEH
Data, OE Hold Time
10
ns
tDB
Time to Device Busy
50
ns
tWC
Write Cycle Time
3
ms
AC Write Waveforms
WE Controlled
CE Controlled
2-132
AT28BV64
Max
1000
Units
ns
AT28BV64
Data Polling Characteristics (1)
Symbol
Parameter
tDH
Data Hold Time
tOEH
OE Hold Time
Min
OE to Output Delay
tWR
Write Recovery Time
Max
Units
10
ns
10
ns
(2)
tOE
Typ
ns
0
ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See AC Read Characteristics.
Data Polling Waveforms
2-133
Ordering Information (1)
tACC
ICC (mA)
(ns)
Active Standby
300
Note:
Operating
Voltage
Ordering Code
Package
8
0.05
2.7V to 3.6V
AT28BV64-30JC
AT28BV64-30PC
AT28BV64-30SC
AT28BV64-30TC
32J
28P6
28S
28T
Commercial
(0°C to 70°C)
8
0.05
2.7V to 3.6V
AT28BV64-30JI
AT28BV64-30PI
AT28BV64-30SI
AT28BV64-30TI
32J
28P6
28S
28T
Industrial
(-40°C to 85°C)
1. See Valid Part Number table below.
Valid Part Numbers
The following table lists standard Atmel products that can be ordered.
Device Numbers
AT28BV64
Speed
30
Package and Temperature Combinations
JC, JI, PC, PI, SC, SI, TC, TI
Package Type
32J
32 Lead, Plastic J-Leaded Chip Carrier (PLCC)
28P6
28 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
28S
28 Lead, 0.300" Wide, Plastic Gull Wing, Small Outline (SOIC)
28T
28 Lead, Plastic Thin Small Outline Package (TSOP)
2-134
Operation Range
AT28BV64
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