BILIN BC807W Pnp silicon epitaxial planar transistor Datasheet

Production specification
PNP Silicon Epitaxial Planar Transistor
BC807W
FEATURES
Pb
z
For general AF applications.
z
High collector current.
z
High current gain.
z
Low collector-emitter saturation voltage.
z
Complements the BC817W.
Lead-free
APPLICATIONS
z
SOT-323
For general purpose amplification and switching.
ORDERING INFORMATION
Type No.
BC807-16W/25W/40W
Marking
Package Code
5A/5B/5C
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
ICM
Peak Collector Current
-1
A
IB
Base Current
-0.1
A
IBM
Peak Base Ccurrent
-0.2
A
PC
Collector Dissipation
250
mW
Tj,Tstg
Junction and Storage Temperature
-65 to +150
℃
F044
Rev.A
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1
Production specification
PNP Silicon Epitaxial Planar Transistor
BC807W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
IC=-10μA,IE=0
-50
V
Collector-emitter breakdown
voltage
V(BR)CEO
-45
V
Emitter-base breakdown voltage
V(BR)EBO
-5
V
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-10mA,IB=0
IE=-10μA,IC=0
TYP
MAX
UNIT
VCB=-20V,IE=0
-0.1
μA
VCB=-20V,IE=0,TA=150℃
-50
μA
VEB=-4V,IB=0
-0.1
μA
ICBO
IEBO
hFE
VCE=-1V,IC=-100mA
BC807-16W
BC807-25W
BC807-40W
100
160
250
VCE=-1V,IC=-300mA
BC807-16W
BC807-25W
BC807-40W
60
100
170
160
250
350
250
400
600
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB=-50mA
-0.7
V
Base-emitter voltage
VBE(sat)
IC=-500mA, IB=-50mA
-1.2
V
Transition frequency
fT
VCE=-5V, IC=-50mA
f=100MHz
200
MHz
Collector-base capacitance
Ccb
VCB=-10V,f=1MHz
10
pF
Emitter-base capacitance
Ceb
VEB=-0.5V,f=1MHz
60
pF
F044
Rev.A
www.gmicroelec.com
2
Production specification
PNP Silicon Epitaxial Planar Transistor
BC807W
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
F044
Rev.A
www.gmicroelec.com
3
Production specification
PNP Silicon Epitaxial Planar Transistor
F044
Rev.A
BC807W
www.gmicroelec.com
4
Production specification
PNP Silicon Epitaxial Planar Transistor
BC807W
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
A
SOT-323
E
K
B
C
D
J
G
Dim
Min
Max
A
2.00
2.20
B
1.15
1.35
C
0.95 Typical
D
0.30 Typical
E
0.25
0.40
G
1.2
1.4
H
0.02
0.10
H
J
K
0.10 Typical
2.20
2.40
All Dimensions in mm
SOLDERING FOOTPRINT
0.65
0.65
1.90
0.90
0.70
Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
BC807W
SOT-323
3000/Tape&Reel
F044
Rev.A
www.gmicroelec.com
5
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