BFG 235 NPN Silicon RF Transistor For low-distortion broadband output amplifier 4 stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA 3 Power amplifiers for DECT and PCN systems 2 Integrated emitter ballast resistor 1 fT = 5.5 GHz VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFG 235 BFG235 Pin Configuration 1=E 2=B 3=E Package 4=C SOT-223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 300 Base current IB 40 Total power dissipation, TS 80 °C F) Ptot Junction temperature Value Unit V mA 2 W Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point RthJS 35 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-27-1999 BFG 235 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 - - V ICES - - 200 µA ICBO - - 100 nA IEBO - - 2 µA hFE 50 120 250 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 25 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 200 mA, VCE = 8 V 2 Oct-27-1999 BFG 235 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 4 5.5 - Ccb - 2.6 3.6 Cce - 1.5 - Ceb - 15 - F - 2.7 - Gma - 12 - |S21e|2 - 6 - IP3 - 40 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 200 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB IC = 60 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz Power gain, maximum available F) IC = 200 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Transducer gain IC = 200 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz Third order intercept point IC = 200 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz 1G ma dBm = |S21 / S12 | (k-(k2-1)1/2 ) 3 Oct-27-1999 BFG 235 Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 2200 mW TS 1800 P tot 1600 1400 1200 TA 1000 800 600 400 200 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 2 RthJS K/W 10 1 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Oct-27-1999 BFG 235 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 6.0 7 5V GHz pF 5.0 5 fT Ccb 4.5 4 1V 4.0 3.5 3 3.0 0.7V 2.5 2 2.0 1 1.5 0 0 4 8 12 16 V 1.0 0 22 50 100 150 200 mA VCB IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 9 13 dB dB 10V 5V 5V 3V 6 2V 2V G 10 10V 7 3V 11 G 300 5 9 4 1V 1V 8 3 7 2 0.7V 6 1 0.7V 5 0 50 100 150 200 mA 0 0 300 IC 50 100 150 200 mA 300 IC 5 Oct-27-1999 BFG 235 Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 14 42 dBm IC=200mA 0.9GHz dB 10V 8V 36 34 IP 3 G 10 1.8GHz 8 5V 32 30 3V 28 0.9GHz 26 6 2V 24 22 4 20 18 2 1V 16 14 0 0 2 4 6 V 8 12 0 12 50 100 150 200 VCE mA 300 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 30 30 IC =200mA IC=200mA dB dB 20 G S21 20 15 15 10 5 10V 2V 1V 0.7V 10 10V 2V 1V 0.7V 0 5 -5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz -10 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 6 Oct-27-1999