TOSHIBA 2SK4018

2SK4018
2
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
−π−MOS V)
2SK4018
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
1.5 ± 0.2
Unit: mm
6.5 ± 0.2
5.2 ± 0.2
z 4-V gate drive
0.6 MAX.
z High forward transfer admittance: |Yfs| = 3.5 S (typ.)
1.6
z Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Drain−source voltage
VDSS
100
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
100
V
Gate−source voltage
VGSS
±20
V
(Note 1)
ID
3
A
Pulse (Note 1)
IDP
12
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
140
mJ
Avalanche current
IAR
3
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
1
0.8 MAX.
5.7
4.1 ± 0.2
Unit
2
2.3 ± 0.2
Rating
0.6 MAX.
2.3
2.3
Symbol
DC
1.1 ± 0.2
0.9
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
5.5 ± 0.2
z Low drain−source ON-resistance: RDS (ON) = 0.28 Ω (typ.)
3
0.6 ± 0.15
1.1 MAX.
0.6 ± 0.15
2
1.
2.
GATE
DRAIN
(HEAT SINK)
3. SOURSE
1
3
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25 mH, RG = 25 Ω, IAR = 3 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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2SK4018
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
—
±10
μA
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
—
—
100
μA
Drain−source breakdown
voltage
Gate threshold voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
—
—
V
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 2 A
—
0.36
0.45
VGS = 10 V, ID = 2 A
—
0.28
0.35
VDS = 10 V, ID = 2 A
1.5
3.5
—
—
280
—
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
50
—
Drain−source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
—
105
—
tr
—
20
—
ton
—
50
—
Rise time
Turn−on time
Switching time
Ω
S
pF
ns
Fall time
tf
—
40
—
—
170
—
—
13.5
—
—
8.5
—
—
5
—
≈
Turn−off time
toff
Total gate charge (gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs
Gate−drain (“Miller”) charge
Qgd
≤
VDD ≈ 80 V, VGS = 10 V, ID = 3 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
3
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
12
A
Forward voltage (diode)
VDSF
—
—
−1.5
V
Reverse recovery time
trr
—
100
—
ns
Reverse recovery charge
Qrr
—
0.2
—
μC
IDR = 3 A, VGS = 0 V
IDR = 3 A, VGS = 0 V, dIDR / dt = 50 A / μs
Marking
K4018
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead (Pb)-Free Finish
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2SK4018
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2SK4018
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2SK4018
RG = 25 Ω
VDD = 25 V, L = 25 mH
5
EAS =
B VDSS
1
⎛
⎞
⋅ L ⋅ I2 ⋅ ⎜
⎟
2
⎝ B VDSS − VDD ⎠
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2SK4018
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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