Fairchild FDMC510P P-channel powertrench mosfet Datasheet

FDMC510P
P-Channel PowerTrench® MOSFET
-20 V, -18 A, 8.0 mΩ
Features
General Description
„ Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been optimized for rDS(ON), switching performance and
ruggedness.
„ Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A
„ Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A
„ Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A
„ High performance trench technology for extremely low rDS(on)
Applications
„ High power and current handling capability in a widely used
surface mount package
„ Battery Management
„ Load Switch
„ 100% UIL Tested
„ Termination is Lead-free and RoHS Compliant
„ HBM ESD capability level >2 KV typical (Note 4)
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
TJ, TSTG
±8
V
-54
(Note 1a)
-Pulsed
PD
Units
V
-18
-12
A
-50
Single Pulse Avalanche Energy
EAS
Ratings
-20
37
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
41
(Note 1a)
Operating and Storage Junction Temperature Range
2.3
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
3
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC510P
Device
FDMC510P
©2010 Fairchild Semiconductor Corporation
FDMC510P Rev.C5
Package
MLP 3.3X3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC510P P-Channel PowerTrench® MOSFET
June 2010
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -16 V, VGS = 0 V
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±8 V, VDS = 0 V
±100
nA
-1.0
V
-20
V
-12
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 µA, referenced to 25 °C
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
-0.4
-0.5
3
mV/°C
VGS = -4.5 V, ID = -12 A
6.4
8.0
VGS = -2.5 V, ID = -10 A
7.6
9.8
VGS = -1.8 V, ID = -9.3 A
9.2
13
VGS = -1.5 V, ID = -8.3 A
11
17
VGS = -4.5 V, ID = -12 A, TJ = 125 °C
8.5
12
VDS = -5 V, ID = -12 A
75
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -10 V, VGS = 0 V,
f = 1 MHz
5910
7860
pF
840
1120
pF
738
1110
pF
15
27
ns
34
55
ns
338
540
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
170
272
ns
Qg(TOT)
Total Gate Charge
VGS = 0 V to -4.5 V
83
116
nC
VGS = 0 V to -2.5 V VDD = -10 V,
ID = -12 A
50
70
6.3
nC
20.4
nC
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -10 V, ID = -12 A,
VGS = -4.5 V, RGEN = 6 Ω
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -12 A
(Note 2)
-0.70
-1.3
VGS = 0 V, IS = -2 A
(Note 2)
-0.53
-1.2
IF = -12 A, di/dt = 100 A/µs
V
35
57
ns
20
32
nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined
by the user’s board design.
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: Starting TJ = 25oC; P-Ch: L = 3 mH, IAS = -5 A, VDD = -20 V, VGS = -4.5 V.
4: No gate overvoltage rating is implied.
FDMC510P Rev.C5
2
www.fairchildsemi.com
FDMC510P P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
50
5
40
VGS = -4.5 V
VGS = -2.5 V
30
VGS = -1.8 V
20
VGS = -1.2 V
10
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX
0
0.0
0.5
1.0
1.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = - 1.5 V
4
VGS = -1.2 V
3
VGS = -1.5 V
2
1
0
2.0
0
10
20
30
40
50
-ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.5
25
ID = -12 A
VGS = -4.5 V
1.4
rDS(on), DRAIN TO
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -4.5 V
VGS = -2.5 V
Figure 1. On Region Characteristics
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX
20
ID = -12 A
15
TJ = 125 oC
10
TJ = 25 oC
5
0
1.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
50
-IS, REVERSE DRAIN CURRENT (A)
100
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
VGS = -1.8 V
40
VDS = -5 V
30
TJ =
150 oC
20
TJ = 25 oC
10
TJ = -55 oC
0
0.0
0.5
1.0
1.5
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.0
2.0
0.2
0.4
0.6
0.8
1.0
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDMC510P Rev.C5
3
1.2
www.fairchildsemi.com
FDMC510P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
20000
ID = -12 A
10000
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
4.5
3.0
VDD = -12 V
VDD = -8 V
VDD = -10 V
1.5
Ciss
20
40
60
80
f = 1 MHz
VGS = 0 V
100
1
Figure 7. Gate Charge Characteristics
20
Figure 8. Capacitance vs Drain
to Source Voltage
60
-ID, DRAIN CURRENT (A)
20
-IAS, AVALANCHE CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
50
VGS = -4.5 V
40
VGS = -2.5 V
30
20
10
o
Limited by Package
1
0.1
1
10
100
0
25
1000
50
P(PK), PEAK TRANSIENT POWER (W)
10
1 ms
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RθJA = 125 oC/W
DC
TA = 25 oC
0.1
1
10
80
150
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
FDMC510P Rev.C5
125
1000
100 us
0.01
0.01
100
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
0.1
75
o
Figure 9. Unclamped Inductive
Switching Capability
1
RθJC = 3 C/W
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
-ID, DRAIN CURRENT (A)
Crss
400
0.1
0.0
0
Coss
1000
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC510P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
FDMC510P Rev.C5
5
www.fairchildsemi.com
FDMC510P P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMC510P P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
FDMC510P Rev.C5
6
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
FDMC510P Rev.C5
7
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FDMC510P P-Channel PowerTrench® MOSFET
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