GOOD-ARK BAV303 Switching diode Datasheet

BAV300 / 301 / 302 / 303
Switching Diode
Features
Silicon Epitaxial Planar Diodes
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BAV100...BAV103 / BAV200...BAV203
Applications
General purposes
Mechanical Data
Case: MicroMELF Glass Case
Weight: approx. 12 mg
Cathode Band Color: Black
Absolute Maximum Ratings
Parameter
Test Condition
Peak reverse voltage
Reverse voltage
( Tamb=25oC unless otherwise specified )
Part
Symbol
Value
Unit
BAV300
VRRM
60
V
BAV301
VRRM
120
V
BAV302
VRRM
200
V
BAV303
VRRM
250
V
BAV300
VR
50
V
V
BAV301
VR
100
BAV302
VR
150
V
BAV303
VR
200
V
mA
IF
250
Peak forward surge current
Forward current
tp= 1 s, Tj=25oC
IFSM
1
A
Forward peak current
f=50Hz
IFM
625
mA
Thermal Characteristics
Parameter
Junction ambient
( Tamb=25oC unless otherwise specified )
Test Condition
mounted on epoxy-glass
hard tissue, Fig 4.
35 um copper clad, 0.9m2
copper area per electrode
Junction temperature
Stroage temperature range
Symbol
Value
Unit
RthJA
500
K/W
Tj
175
o
C
Tstg
-65 to +175
o
C
Electrical Characteristics
Parameter
( Tamb=25oC unless otherwise specified )
Test Condition
Forward voltage
IF=100mA
Reverse current
VR=50V
Breakdown voltage
Diode capacitance
Part
Symbol
Min.
Typ.
Max.
Unit
VF
1
V
BAV300
IR
100
nA
VR=100V
BAV301
IR
100
nA
VR=150V
BAV302
IR
100
nA
VR=200V
BAV303
IR
100
nA
Tj=100oC, VR=50V
BAV300
IR
15
uA
Tj=100oC, VR=100V
BAV301
IR
15
uA
Tj=100oC, VR=150V
BAV302
IR
15
uA
Tj=100oC, VR=200V
BAV303
IR
15
uA
IR=100uA, tp/T=0.01, tp=0.3ms
BAV300
V(BR)
60
IR=100uA, tp/T=0.01, tp=0.3ms
BAV301
V(BR)
120
V
IR=100uA, tp/T=0.01, tp=0.3ms
BAV302
V(BR)
200
V
IR=100uA, tp/T=0.01, tp=0.3ms
BAV303
V(BR)
250
VR=0, f=1MHz
V
CD
1.5
5
Differential forward resistance
IF=10mA
rf
Reverse recovery time
IF=IR=30mA, iR=3mA, RL=100Ω
trr
654
V
pF
Ω
50
ns
Typical characteristics
( Tamb=25oC unless otherwise specified )
Package Dimensions in mm (inches)
655
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