Cypress CYU01M16ZFCU-70BVXI 16-mbit (1m x 16) pseudo static ram Datasheet

CYU01M16ZFC
MoBL3™
PRELIMINARY
16-Mbit (1M x 16) Pseudo Static RAM
Features
• Wide voltage range: 1.7V–1.95V
• Access Time: 70 ns
• Ultra-low active power
— Typical active current: 3 mA @ f = 1 MHz
— Typical active current: 18 mA @ f = fmax
• Ultra low standby power
• 16-word Page Mode
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Deep Sleep Mode
• Offered in a Lead-Free 48-ball BGA Package
• Operating Temperature: –40°C to +85°C
Functional Description[1]
The CYU01M16ZFC is a high-performance CMOS Pseudo
Static RAM organized as 1M words by 16 bits that supports an
asynchronous memory interface. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL®) in
portable applications such as cellular telephones. The device
Logic Block Diagram
Reading from the device is accomplished by taking Chip
Enables (CE LOW) and Output Enable (OE) LOW while
forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE)
is LOW, then data from the memory location specified by the
address pins will appear on I/O0 to I/O7. If Byte High Enable
(BHE) is LOW, then data from memory will appear on I/O8 to
I/O15. Refer to the truth table for a complete description of read
and write modes.
Deep Sleep Mode is enabled by driving ZZ LOW. See the Truth
Table for a complete description of Read, Write, and Deep
Sleep mode.
1M × 16
RAM Array
SENSE AMPS
A11
A12
A13
A14
A15
A16
A17
A18
A19
Writing to the device is accomplished by taking Chip Enable
(CE LOW) and Write Enable (WE) input LOW. If Byte Low
Enable (BLE) is LOW, then data from I/O pins (I/O0 through
I/O7), is written into the location specified on the address pins
(A0 through A19). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A19).
DATA IN DRIVERS
ROW DECODER
A8
A9
A10
can be put into standby mode when deselected (CE HIGH or
both BHE and BLE are HIGH). The input/output pins (I/O0
through I/O15) are placed in a high-impedance state when:
deselected (CE HIGH), outputs are disabled (OE HIGH), both
Byte High Enable and Byte Low Enable are disabled (BHE,
BLE HIGH), or during a write operation (CE LOW and WE
LOW).
I/O0–I/O7
I/O8–I/O15
BHE
WE
A6
A5
A4
A3
A2
A1
A0
A7
COLUMN DECODER
CE
OE
BLE
Power-Down
Circuit
BHE
BLE
ZZ
CE
Refresh/Power-down
Circuit
Note:
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05604 Rev. *F
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised January 16, 2006
CYU01M16ZFC
MoBL3™
PRELIMINARY
Pin Configuration[2, 3]
VFBGA
Top View
4
3
1
2
BLE
OE
A0
A1
A2
ZZ
A
I/O8
BHE
A3
A4
CE
I/O0
B
I/O9
I/O10
A5
A6
I/O1
I/O2
C
VSS
I/O11
A17
A7
I/O3
VCC
D
VCC
I/O12 NC
A16
I/O4
VSS
E
I/O14
I/O13
A14
A15
I/O5
I/O6
F
I/O15
A19
A12
A13
WE
I/O7
G
A18
A8
A9
A10
A11
NC
H
5
6
Product Portfolio[4]
Power Dissipation
Product
CYU01M16ZFC
Speed
(ns)
VCC Range (V)
Min.
Typ.[4]
Max.
1.7
1.8
1.95
Low-Power Modes
At power-up, all four sections of the die are activated and the
PSRAM enters into its default state of full memory size and
refresh space. This device provides four different Low-Power
Modes.
1. Reduced Memory Size Operation
2. Partial Array Refresh
3. Deep Sleep Mode
4. Temperature Controlled Refresh
Reduced Memory Size Operation
In this mode, the 16 Mb PSRAM can be operated as a 12-Mbit,
8-Mbit or a 4-Mbit memory block. Please refer to “Variable
Address Space Register (VAR)” on page 4 for the protocol to
turn on/off sections of the memory. The device remains in RMS
mode until changes to the Variable Address Space register are
made to revert back to a complete 16-Mbit PSRAM.
Partial Array Refresh
The Partial Array Refresh mode allows customers to turn off
sections of the memory block in the Stand-by mode (with ZZ
70
Operating ICC (mA)
f = 1MHz
Typ.[4]
3
f = fmax
Standby ISB2 (µA)
Max.
Typ.[4]
Max.
Typ.[4]
Max.
5
18
25
55
70
tied low) to reduce standby current. In this mode the PSRAM
will only refresh certain portions of the memory in the Stand-By
Mode, as configured by the user through the settings in the
Variable Address Register.
Once ZZ returns high in this mode, the PSRAM goes back to
operating in full address refresh. Please refer to “Variable
Address Space Register (VAR)” on page 4 for the protocol to
turn off sections of the memory in Stand-By mode. If the VAR
register is not updated after the power up, the PSRAM will be
in its default state. In the default state the whole memory array
will be refreshed in the Stand-By Mode. The 16-Mbit MoBL3 is
divided into four 4-Mbit sections allowing certain sections to be
active (i.e., refreshed).
Deep Sleep Mode
In this mode, the data integrity in the PSRAM is not
guaranteed. This mode can be used to lower the power
consumption of the PSRAM in an application. This mode can
be enabled and disabled through VAR similar to the RMS and
PAR mode. Deep Sleep Mode is activated by driving ZZ LOW.
The device stays in the deep sleep mode until ZZ is driven
HIGH.
Notes:
2. Ball H6, E3 can be used to upgrade to 32M and 64M density respectively.
3. NC “no connect” - not connected internally to the die.
4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ.), TA = 25°C. Tested initially and
after any design changes that may affect the parameter.
Document #: 38-05604 Rev. *F
Page 2 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
Variable Address Mode Register (VAR) Update[5, 6]
tWC
ADDRESS
Lower-order address (A0-A4) Low Power Modes
CE
tAW
tHA
t BW
BHE / BLE
t SA
t
WE
t
PWE
ZZWE
ZZ
tZZMIN
Deep Sleep Mode—Entry/Exit [7]
t ZZMIN
ZZ
Deep Sleep Mode
t
t
CDR
R
CE
VAR Update and Deep Sleep Mode Timing[5, 6]
Parameter
Description
tZZWE
ZZ LOW to Write Start
tCDR
Chip deselect to ZZ LOW
tR[7]
Operation Recovery Time (Deep Sleep Mode only)
tZZMIN
Deep Sleep Mode Time
Min.
Max.
Unit
1
µs
0
ns
200
µs
8
µs
Notes:
5. OE and the data pins are in a don’t care state while the device is in variable address mode.
6. All other timing parameters are as shown in the data sheets.
7. tR applies only in the deep sleep mode.
Document #: 38-05604 Rev. *F
Page 3 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
Variable Address Space Register (VAR)
I
A19–A5
A4
A3
A2
A1
A0
Memory Array Selection
00 – 16M(Default)
01 – 12M
10 – 8M
11 – 4M
Top/Bottom
Half Selection
Reserved
0 – Bottom (Default)
1 – Top
Array On/Off on ZZ
ZZ Enable/Disable 0 – PAR Mode (Default)
0 – Deep Sleep Enabled (Default) 1 – RMS Mode
1 – Deep Sleep Disabled
Variable Address Space—Address Patterns
Partial Array Refresh Mode (A3 = 0, A4 = 1)
A2
A1, A0
Size
Density
0
11
1/4th of the array
Refresh Section
00000h - 3FFFFh (A19 = A18 = 0)
Address
256K x 16
4M
0
10
1/2th of
00000h - 7FFFFh (A19 = 0)
512K x 16
8M
0
01
3/4th of the array
00000h - BFFFFh (A19:A18 not equal to 1 1)
768K x 16
12M
1
11
1/4th of the array
C0000h - FFFFFh (A19 = A18= 1)
256K x 16
4M
1
10
1/2th of the array
80000h - FFFFFh (A19 = 1)
512K x16
8M
01
3/4th of
40000h - FFFFFh (A19:A18 not equal to 0 0)
786K x16
12M
1
the array
the array
Reduced Memory Size Mode (A3 = 1, A4 = 1)
0
11
1/4th of the array
00000h - 3FFFFh (A19 = A18 = 0)
256K x 16
4M
0
10
1/2th of the array
00000h - 7FFFFh (A19 = 0)
512K x 16
8M
0
01
3/4th of the array
00000h - BFFFFh (A19:A18 not equal to 1 1)
768K x 16
12M
0
00
Full array
00000h - FFFFFh (Default)
1M x 16
16M
1
11
1/4th of
C0000h - FFFFFh (A19 = A18 = 1)
256K x 16
4M
1
10
1/2th of the array
80000h - FFFFFh (A19 = 1)
512K x 16
8M
40000h - FFFFFh (A19:A18 not equal to 0 0)
768K x 16
12M
1M x 16
16M
h of
the array
the array
1
01
3/4
1
00
Full array
00000h - FFFFFh (Default)
Page Mode
This device can be operated in a page read mode. This is
accomplished by initiating a normal read of the device.
In order to operate the device in page mode, the upper order
address bits should be fixed for four-word page access
operation, all address bits except for A1 and A0 should be
fixed until the page access is completed. For an eight-word
page access, all address bits, except for A2, A1, and A0,
Page Mode Feature
should be fixed. For a sixteen-word page mode all address
bits, except for A3, A2, A1, and A0, should be fixed.
The supported page lengths are four, eight, and sixteen words.
Random page read is supported for all three four, eight, and
sixteen-word page read options. Therefore, any address can
be used as the starting address.
Please, refer to the table below for an overview of the page
read modes.
4-Word Mode
8-Word Mode
16-Word Mode
Page Length
4 words
8 words
16 words
Page Read Corresponding Addresses
A1, A0
A2, A1, A0
A3, A2, A1, A0
Page Read Start Address
Don't Care
Don't Care
Don’t Care
Page Direction
Don't Care
Don't Care
Don’t Care
Document #: 38-05604 Rev. *F
Page 4 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
Power-up Characteristics
The initialization sequence is shown in the figure below. Chip
Select (CE) should be HIGH for at least 200 µs after VCC has
reached a stable value. No access must be attempted during
this period of 200 µs.The state of ZZ has to be high (H) for the
duration of power-up.
Stable Power
VCC
Logic (HIGH)
ZZ
First Access
Tpu
CE
Parameter
Description
Min.
Tpu
Chip Enable Low After Stable VCC
200
Document #: 38-05604 Rev. *F
Typ.
Max.
Unit
µs
Page 5 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
DC Input Voltage[8, 9, 10] .................. –0.2V to VCCMAX + 0.3V
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential .–0.2V to VCCMAX + 0.3V
DC Voltage Applied to Outputs
in High Z State[8, 9, 10] ......................–0.2V to VCCMAX + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... > 200 mA
Device
Range
Operating
Temperature
(TA)
VCC
CYU01M16ZFC Industrial –40°C to +85°C 1.7V to 1.95V
DC Electrical Characteristics Over the Operating Range [8, 9, 10]
CYU01M16ZFC-70
Parameter
Description
Test Conditions
VCC
Supply Voltage
VOH
Output HIGH Voltage
IOH = –0.1 mA
VCC= 1.7V to 1.95V
VOL
Output LOW Voltage
IOL = 0.1 mA
VCC= 1.7V to 1.95V
VIH
Input HIGH Voltage
1.7V < VCC < 1.95
VIL
Input LOW Voltage
VCC= 1.7V to 1.95V
IIX
Input Leakage Current
GND < VIN < VCC
IOZ
Output Leakage Current GND < VOUT < VCC
ICC
VCC Operating Supply
Current
Min.
Typ.[4]
Max.
Unit
1.7
1.8
1.95
V
VCC – 0.2
V
0.2
V
0.8 * VCC
VCC + 0.3
V
–0.2
0.2 * VCC
V
–1
+1
µA
+1
µA
18
25
mA
f = 1 MHz
3
5
mA
f = fMAX =
1/tRC
–1
VCC= VCCmax
IOUT = 0 mA
CMOS levels
ISB1
Automatic CE
Power-Down
Current —
CMOS Inputs
CE > VCC – 0.2V,
VI > VCC – 0.2V, VIN < 0.2V
f = fMAX (Address and Data Only),
f = 0 (OE, WE, BHE and BLE),
VCC = 1.95V, ZZ >= VCC – 0.2V
55
70
µA
ISB2
Automatic CE
Power-Down
Current —
CMOS Inputs
CE > VCC – 0.2V, VIN > VCC – 0.2V
or VIN < 0.2V, f = 0, VCC = VCCMAX
ZZ>= VCC – 0.2V
55
70
µA
IZZ
Deep Sleep Current
VCC = VCCMAX, ZZ < 0.2V,
CE = HIGH or BHE and BLE = HIGH
10
µA
Capacitance[11]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
Max.
Unit
8
pF
8
pF
Notes:
8. VIL(MIN) = –0.5V for pulse durations less than 20 ns.
9. VIH(Max) = VCC + 0.5V for pulse durations less than 20 ns.
10. Overshoot and undershoot specifications are characterized and are not 100% tested.
11. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05604 Rev. *F
Page 6 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
Thermal Resistance[11]
Parameter
Description
ΘJA
Thermal Resistance
(Junction to Ambient)
ΘJC
Thermal Resistance
(Junction to Case)
Test Conditions
V FBGA
Unit
56
°C/W
11
°C/W
Test conditions follow standard test methods and
procedures for measuring thermal impedence, per
EIA / JESD51.
AC Test Loads and Waveforms
R1
VCC
OUTPUT
VCC
GND
30 pF
INCLUDING
JIG AND
SCOPE
R2
10%
Rise Time = 1 V/ns
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
Equivalent to:
THEVENIN EQUIVALENT
RTH
OUTPUT
VTH
Parameters
1.8V (VCC)
Unit
R1
14000
Ω
R2
14000
Ω
RTH
7000
Ω
VTH
0.90
V
Document #: 38-05604 Rev. *F
Page 7 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
Switching Characteristics Over the Operating Range[12, 13, 14, 15, 18]
70 ns
Parameter
Description
Min.
Max.
Unit
40000
ns
Read Cycle
tRC [17]
Read Cycle Time
70
tCD
Chip Deselect Time
CE, BLE/BHE High Pulse Time
15
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
tDOE
tLZOE
ns
70
ns
CE LOW to Data Valid
70
ns
OE LOW to Data Valid
35
ns
[13, 14, 16]
OE LOW to Low Z
5
5
[13, 14, 16]
tHZOE
OE HIGH to High Z
tLZCE
CE LOW to Low Z[13, 14, 16]
ns
ns
25
10
ns
ns
tHZCE
CE HIGH to High
Z[13, 14, 16]
25
ns
tDBE
BLE/BHE LOW to Data Valid
70
ns
25
ns
40000
ns
35
ns
40000
ns
Z[13, 14, 16]
tLZBE
BLE/BHE LOW to Low
tHZBE
BLE/BHE HIGH to High Z[13, 14, 16]
5
ns
Page Read Cycle
tPC
Page Mode Read Cycle Time
tPA
Page Mode Address Access
35
Write Cycle[15]
tWC
Write Cycle Time
70
tSCE
CE LOW to Write End
60
ns
tCD
Chip Deselect Time
CE, BLE/BHE High Pulse Time
15
ns
tAW
Address Set-Up to Write End
60
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Set-Up to Write Start
0
ns
tPWE
WE Pulse Width
50
ns
tBW
BLE/BHE LOW to Write End
60
ns
tSD
Data Set-Up to Write End
25
ns
tHD
Data Hold from Write End
0
ns
tHZWE
tLZWE
WE LOW to
High-Z[13, 14, 16]
WE HIGH to
Low-Z[13, 14, 16]
25
10
ns
ns
Notes:
12. Test conditions for all parameters other than tri-state parameters assume signal transition time of 1 ns/V, timing reference levels of VCC/2, input pulse levels of
0V to VCC, and output loading of the specified IOL/IOH as shown in the “AC Test Loads and Waveforms” section.
13. At any given temperature and voltage conditions tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWEfor any
given device. All low-Z parameters will be measured with a load capacitance of 30 pF (1.8V)
14. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.
15. The internal Write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals must be ACTIVE to initiate a write and any
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates
the write.
16. High-Z and Low-Z parameters are characterized and are not 100% tested.
17. If invalid address signals shorter than min. tRC are continuously repeated for 40 µs, the device needs a normal read timing (tRC) or needs to enter standby state
at least once in every 40 µs.
18. In order to achieve 70ns performance, the read access must be CE controlled. That is, the addresses must be stable prior to CE going active.
Document #: 38-05604 Rev. *F
Page 8 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
Switching Waveforms
Read Cycle 1 (Address Transition Controlled)[20, 21]
tRC
ADDRESS
tOHA
DATA OUT
tAA
DATA VALID
PREVIOUS DATA VALID
Read Cycle 2 (OE Controlled)[19, 21]
ADDRESS
tRC
CE
tCD
tHZCE
tACE
BHE/BLE
tLZBE
tDBE
tHZBE
OE
tHZOE
tDOE
DATA OUT
tLZOE
HIGH IMPEDANCE
HIGH
IMPEDANCE
DATA VALID
tLZCE
VCC
SUPPLY
CURRENT
50%
50%
ICC
ISB
Notes:
19. Whenever CE, BHE/BLE are taken inactive, they must remain inactive for a minimum of 15 ns
20. Device is continuously selected. OE, CE = VIL.
21. WE is HIGH for Read Cycle.
Document #: 38-05604 Rev. *F
Page 9 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
Switching Waveforms (continued)
Page Read Cycle (ZZ = WE = VIH, 16 word access)[17, 21]
t RC
A4-A19
tOHA
tAA
A0-A3
t PC
CE
t ACE
tHZBE
t
DOE
OE
t HZCE
BHE/BLE
tDBE
t PAA
t LZCE
DATA OUT
DATA VALID
High Z
DATA VALID
DATA VALID
DATA VALID
DATA VALID
DATA VALID
DATA VALID
DATA VALID
Write Cycle 1 (WE Controlled)[15, 16, 19, 22, 23]
t WC
ADDRESS
tSCE
CE
tCD
tSA
tAW
tPWE
tHA
WE
tBW
BHE/BLE
OE
tSD
DATA I/O
tHD
VALID DATA
DON’T CARE
tHZOE
Notes:
22. Data I/O is high-impedance if OE > VIH.
23. During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.
Document #: 38-05604 Rev. *F
Page 10 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
Switching Waveforms (continued)
Write Cycle 2 (CE Controlled)[15, 16, 19, 22, 23]
t WC
ADDRESS
tSCE
CE
tSA
tHA
tAW
tPWE
WE
tBW
BHE/BLE
OE
tSD
t HZOE
DATA I/O
tHD
VALID DATA
DON’T CARE
Write Cycle 3 (WE Controlled, OE LOW)[ 19, 23]
tWC
ADDRESS
tSCE
CE
tBW
BHE/BLE
tAW
tSA
tHA
tPWE
WE
tSD
DATA I/O
DON’T CARE
VALID DATA
tHZWE
Document #: 38-05604 Rev. *F
tHD
tLZWE
Page 11 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
Switching Waveforms (continued)
Write Cycle 4 (BHE/BLE Controlled, OE LOW)[15, 19, 22, 23]
tWC
ADDRESS
CE
tSCE
tAW
tHA
tBW
BHE/BLE
tSA
tPWE
WE
tSD
DON’T CARE
DATA I/O
tHD
VALID DATA
Truth Table[24, 25]
ZZ
CE
WE
OE
BHE
BLE
Inputs/Outputs
Mode
Power
H
H
X
X
X
X
High Z
Deselect/Power-down
Standby (ISB)
H
X
X
X
H
H
High Z
Deselect/Power-down
Standby (ISB)
H
L
X
X
H
H
High Z
Deselect/Power-down
Standby (ISB)
H
L
H
L
L
L
Data Out (I/O0–I/O15)
Read
Active (ICC)
H
L
H
L
H
L
Data Out (I/O0–I/O7);
I/O8–I/O15 in High Z
Read
Active (ICC)
H
L
H
L
L
H
Data Out (I/O8–I/O15);
I/O0–I/O7 in High Z
Read
Active (ICC)
H
L
H
H
L
L
High Z
Output Disabled
Active (ICC)
H
L
H
H
H
L
High Z
Output Disabled
Active (ICC)
H
L
H
H
L
H
High Z
Output Disabled
Active (ICC)
H
L
L
X
L
L
Data In (I/O0–I/O15)
Write (Upper Byte and Lower
Byte)
Active (ICC)
H
L
L
X
H
L
Data In (I/O0–I/O7);
I/O8–I/O15 in High Z
Write (Lower Byte Only)
Active (ICC)
H
L
L
X
L
H
Data In (I/O8–I/O15);
I/O0 –I/O7 in High Z
Write (Upper Byte Only)
Active (ICC)
L
H
X
X
H
H
Data in (A0–A4)
Write (Variable Address Mode Active (ICC)
Register)
L
H
X
X
X
X
High Z
Deep Power-down / PAR
Deep Sleep (IZZ) /
Stand by
Notes:
24. H = Logic HIGH, L = Logic LOW, X = Don’t Care.
25. During ZZ = L and CE = H, Mode depends on how the VAR is set up either in PAR or Deep Sleep Modes.
Document #: 38-05604 Rev. *F
Page 12 of 14
CYU01M16ZFC
MoBL3™
PRELIMINARY
Ordering Information
Speed
(ns)
Ordering Code
Package
Name
Package Type
Operating
Range
70
CYU01M16ZFCU-70BVXI
BV48
48-ball Fine Pitch VFBGA (6 mm × 8 mm × 1 mm) Lead-Free
Industrial
Please contact your local Cypress Sales representative for availability of other parts.
Package Diagram
48-Lead VFBGA (6 x 8 x 1 mm) BV48
BOTTOM VIEW
TOP VIEW
A1 CORNER
Ø0.05 M C
Ø0.25 M C A B
A1 CORNER
Ø0.30±0.05(48X)
2
3
4
5
6
6
4
5
3
2
1
C
C
E
F
G
D
E
2.625
D
0.75
A
B
5.25
A
B
8.00±0.10
8.00±0.10
1
F
G
H
H
A
1.875
A
B
0.75
6.00±0.10
3.75
6.00±0.10
0.10 C
0.21±0.05
0.25 C
0.55 MAX.
B
0.15(4X)
51-85150-*D
C
1.00 MAX
0.26 MAX.
SEATING PLANE
MoBL is a registered trademark and MoBL3 and More Battery Life are trademarks of Cypress Semiconductor Corporation. All
product and company names mentioned in this document may be the trademarks of their respective holders.
Document #: 38-05604 Rev. *F
Page 13 of 14
© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
PRELIMINARY
CYU01M16ZFC
MoBL3™
Document History Page
Document Title: CYU01M16ZFC MoBL3™ 16-Mbit (1M x 16) Pseudo Static RAM
Document Number: 38-05604
REV.
ECN NO.
Issue
Date
Orig. of
Change
Description of Change
**
278869
See ECN
SYT
New Data Sheet
*A
280850
See ECN
REF
Updated Ordering information to incorporate lead-free parts.
*B
314034
See ECN
PCI
Corrected Part Number
Added Operating Range in Features Section
Moved address lines A8 - A10 from Column decoder to Row decoder in the
Logic Block Diagram
Changed Pin Configuration Diagram Name from FBGA to VFBGA
Added pin E3 in note #2
Modified description on Deep Sleep Mode
Changed tZZWE description
Changed ΘJA and ΘJC from 55 and 17 °C/W to 56 and 11°C/W respectively
Modified Test Condition for IIX and IOZ
Changed VCC(typ) to VCC in note # 12
Changed tOHA from 10 ns to 5 ns
Changed tSCE, tAW and tBW from 45 to 50 ns
Changed tRC and tWC from 6000 ns to 40000 ns
Changed tPC and tPA from 15 ns to 20 ns
Added Parameter tCD in AC Table and its corresponding footnote in Notes
Section
Changed R1 and R2 from 13500 and 10800 Ω to 14000 Ω
Changed RTH from 6000 to 7000 Ω
Parameter tCD added in Read Cycle 2 and Write Cycle 1 Timing Diagrams
Changed from Advance Information to Preliminary
*C
351780
See ECN
PCI
Modified Logic Block Diagram
Modified description on Deep Sleep Mode
Deleted Page Write in the Page Mode Feature Table
Added CE, BHE and BLE in test conditions for IZZ in DC Table
Modified condition in the third row of the Truth Table for ZZ Pin from X to H
*D
386551
See ECN
PCI
Changed tPC and tPA from 20 to 25 ns
Replaced TBDs with appropriate values
*E
406266
See ECN
NXR
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Removed 55 ns Speed Bin.
Removed Reference to BHE/ BLE from DPD wave form on page # 3.
Added ZZ in Power Up characteristics on page# 5.
Added ISB1 specification in the DC characteristics table on page #6.
Added test condition ZZ>= VCC-0.2V for ISB2
Updated the Truth Table for DPD / PAR and Write (Variable Address Mode
Register) Modes.
*F
420604
See ECN
HRT
Changed TCD value to 15 ns from 5 ns on Read and Write Cycles
Changed TPC and TPAA values to 35 ns from 25 ns
Included “Chip Enable Access” footnote in AC Parameters
Changed Isb2 value from 60µA to 70µA
Document #: 38-05604 Rev. *F
Page 14 of 14
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