Dynex DSF8035SK35 Fast recovery diode Datasheet

DSF8035SK
DSF8035SK
Fast Recovery Diode
Replaces March 1998 version, DS4412-1.3
DS4412-2.0 January 2000
APPLICATIONS
KEY PARAMETERS
VRRM
3500V
IF(AV)
335A
IFSM
3500A
Qr
400µC
trr
4.0µs
■ Snubber Diode For GTO Applications
FEATURES
■ Double side cooling
■ High surge capability
■ Low recovery charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
DSF8035SK35
3500
Conditions
VRSM = VRRM + 100V
Lower voltage grades available.
Outline type code: K.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
335
A
IF(RMS)
RMS value
Tcase = 65oC
529
A
Continuous (direct) forward current
Tcase = 65oC
490
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
226
A
IF(RMS)
RMS value
Tcase = 65oC
355
A
Continuous (direct) forward current
Tcase = 65oC
317
A
IF
1/8
DSF8035SK
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Conditions
Parameter
Max.
Units
3.0
kA
45 x 103
A2s
2.4
kA
28.8 x 103
A2s
Surge (non-repetitive) forward current
10ms half sine; with 0% VRRM, Tj = 150oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 150oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Conditions
Parameter
Symbol
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.048
o
Anode dc
-
0.090
o
Cathode dc
-
0.103
o
Double side
-
0.01
o
Single side
-
0.02
o
-
150
o
o
C/W
C/W
Single side cooled
Rth(c-h)
Thermal resistance - case to heatsink
Clamping force 8.0kN
with mounting compound
C/W
C/W
C/W
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
175
Clamping force
7.0
9.0
kN
Typ.
Max.
Units
-
Forward (conducting)
C
C
CHARACTERISTICS
Symbol
Conditions
VFM
Forward voltage
At 400A peak, Tcase = 25oC
-
3.5
V
IRRM
Peak reverse current
At VRRM, Tcase = 150oC
-
50
mA
-
4.0
µs
trr
Reverse recovery time
Recovered charge (50% chord)
IF = 1000A, diRR/dt = 100A/µs
-
400
µC
IRM
Reverse recovery current
Tcase = 150oC, VR = 100V
-
220
A
K
Soft factor
1.4
-
-
QRA1
VTO
Threshold voltage
At Tvj = 150oC
-
1.8
V
rT
Slope resistance
At Tvj = 150oC
-
3.7
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
-
140
V
VFRM
2/8
Parameter
DSF8035SK
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
CURVES
1600
Measured under
pulse conditions
Instantaneous forward current IF - (A)
1400
1200
Tj = 150˚C
1000
800
600
Min. Limit
Max. Limit
400
200
0
0
2.0
4.0
6.0
Instantaneous forward voltage VF - (V)
8.0
Fig.1 Maximum (limit) forward characteristics
3/8
DSF8035SK
500
Measured under
pulse conditions
Instantaneous forward current IF - (A)
400
Tj = 150˚C
300
200
Min. Limit
Max. Limit
100
0
0.5
1.5
2.5
3.5
4.5
Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
500
Current
waveform
VFR
Voltage
waveform
400
Transient forward votage VFP - (V)
A: Tj = 150˚C
B: Tj = 125˚C
C: Tj = 25˚C
δy
di = δy
dt δx
δx
300
A
B
200
C
100
0
0
500
1000
1500
2000
2500
Rate of rise of forward current dIF/dt - (A/µs)
4/8
Fig.3 Transient forward voltage vs rate of rise of forward current
DSF8035SK
100000
QS = ∫
IF
Conditions:
50µs
0
Tj = 150˚C,
VR = 100V
Reverse recovered charge QS - (µC)
QS
tp = 1ms
dIR/dt
10000
IRR
IF = 2000
IF = 1000
1000
IF = 200
IF = 500
IF = 100
100
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig. 4 Recovered charge
1000
Conditions:
Tj = 150˚C,
IF = 2000A
VR = 100V
IF = 1000A
Reverse recovery current IRR - (A)
IF = 500A
IF = 200A
IF = 100A
100
10
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig. 5 Typical reverse recovery current vs rate of rise of reverse current
5/8
DSF8035SK
0.1
Thermal impedance - (˚C/W)
Single side cooled
Double side cooled
0.01
0.001
0.001
0.01
0.1
Time - (s)
1
Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
6/8
10
DSF8035SK
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 Holes Ø3.6 x 2.0 deep (One in each electrode)
Cathode
Ø42 max
27.0
25.4
Ø25 nom
Ø25 nom
Anode
Nominal weight: 160g
Clamping force: 8kN ±10%
Package outine type code: K
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
AN4839
Thyristor and diode measurement with a multi-meter
AN4853
Use of V , r on-state characteristic
AN5001
TO
T
7/8
DSF8035SK
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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SALES OFFICES
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Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
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UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4412-2 Issue No. 2.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
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