Renesas BCR8PM-12L Triac medium power use Datasheet

BCR8PM-12L
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
REJ03G0461-0200
Rev.2.00
Nov.08.2004
Features
• Viso : 2000 V
• Insulated Type
• Planar Passivation Type
• IT (RMS) : 8 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGTIII : 30 mA (20 mA)Note5
Outline
TO-220F
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2
3
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, and carpet, solenoid driver, small motor control,
copying machine, electric tool, electric heater control, and other general purpose control applications
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Rev.2.00,
Nov.08.2004,
page 1 of 7
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
8
Unit
A
Surge on-state current
ITSM
80
A
I2 t
26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
2000
W
W
V
A
°C
°C
g
V
Symbol
Min.
Typ.
Max.
Unit
IDRM
VTM
—
—
—
—
2.0
1.6
mA
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 113°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 12 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30Note5
30Note5
30Note5
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
0.2/0.1
—
—
V
Rth (j-c)
—
—
3.7
°C/W
Tj = 125°C/150°C,
VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10/1
—
—
V/µs
Tj = 125°C/150°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2.
3.
4.
5.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.2.00,
Nov.08.2004,
page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C)
Performance Curves
Maximum On-State Characteristics
3
2
Tj = 150°C
1
10
7
5
3
2
Tj = 25°C
100
7
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
50
40
30
20
10
0 0
10
2 3
5 7 101
2 3
5 7 102
Gate Trigger Current vs.
Junction Temperature
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
VGT = 1.5V
–1
7 IFGT I IRGT I, IRGT III
VGD = 0.1V
5
1
2
3
10 2 3 5 710 2 3 5 710 2 3 5 7104
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
60
Gate Characteristics (I, II and III)
103
7
5
3
2
102
7
5
Typical Example
IRGT III
IRGT I, IFGT I
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
Typical Example
3
2
2
10
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Rev.2.00,
80
70
Conduction Time (Cycles at 60Hz)
100
7
5
3
2
10
90
On-State Voltage (V)
3
2 VGM = 10V
101
7
5
3
2
Surge On-State Current (A)
100
Nov.08.2004,
page 3 of 7
Transient Thermal Impedance (°C/W)
On-State Current (A)
102
7
5
Rated Surge On-State Current
102 2 3 5 7103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 –1
0
1
2
10 2 3 5 710 2 3 5 710 2 3 5 710
Conduction Time (Cycles at 60Hz)
BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C)
No Fins
10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
2
4
6
8
10 12 14 16
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
Curves apply regardless
of conduction angle
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
2
4
6
8
160
Ambient Temperature (°C)
Case Temperature (°C)
14
Conduction Time (Cycles at 60Hz)
0
0
120 120 t2.3
120
100 100 t2.3
100
60 60 t2.3
80
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
20
0
0
10 12 14 16
All fins are black painted
aluminum and greased
140
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Ambient Temperature (°C)
16
On-State Power Dissipation (W)
10
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
–1
10 1
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
Rev.2.00,
Maximum On-State Power Dissipation
3
Nov.08.2004,
page 4 of 7
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
–1
10
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C)
3
103
Typical Example
Latching Current (mA)
7
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
10
7
5
3
2
Distribution
102
7
5
3
2
T2+, G–
Typical Example
1
10
7
5
3 T +, G+
2 2– – Typical Example
T2 , G
0
10
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
100
80
60
III Quadrant
40
20
I Quadrant
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj = 125°C)
160
140
Typical Example
Tj = 150°C
120
100
80
60
40
III Quadrant
20
I Quadrant
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Rev.2.00,
Latching Current vs.
Junction Temperature
Nov.08.2004,
page 5 of 7
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5 Minimum
Characteristics
3
2
0
Value
10
7 0
10
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C)
Gate Trigger Current vs.
Gate Current Pulse Width
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Commutation Characteristics (Tj = 150°C)
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
3
2
Minimum
Characteristics
Value
0
10
7 0
10
5 7 101
2 3
2 3
5 7 102
3
10
7
5
Typical Example
IFGT I
IRGT I
3
2
IRGT III
2
10
7
5
3
2
101 0
10
5 7 101
2 3
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
A
6V
330Ω
V
Test Procedure I
V
Test Procedure II
6Ω
A
6V
V
330Ω
Test Procedure III
Rev.2.00,
Nov.08.2004,
page 6 of 7
R1
A
6V
330Ω
C0
C1 = 0.1 to 0.47µF
R1 = 47 to 100Ω
R0
C0 = 0.1µF
R0 = 100Ω
BCR8PM-12L (The product guaranteed maximum junction temperature of 150°C)
Package Dimensions
TO-220F
EIAJ Package Code
JEDEC Code

Conforms
Mass (g) (reference value)
Lead Material
2.0
Cu alloy
10.5 max
2.8
17
8.5
5.0
1.2
5.2
3.6
φ 3.2 ± 0.2
13.5 min
1.3 max
0.8
0.5
2.54
2.6
Symbol
4.5
2.54
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
100 Type name +B
Lead form
Plastic Magazine (Tube)
50 Type name +B – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Nov.08.2004,
page 7 of 7
Standard order
code example
BCR8PM-12LB
BCR8PM-12LB-A8
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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