BCD AZV832 Single/dual low bias current, low voltage, rail-to-rail input/output Datasheet

Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
AZV831/2
Input/Output CMOS Operational Amplifiers
MOS Operational
General Description
Features
The AZV831/AZV832 is single/dual channels
rail-to-rail input and output amplifier, which provides
a wide input common-mode voltage range and output
voltage swing capability for maximum signal swings
in low supply voltage applications. The device is
fully specified to operate from 1.6V to 5.0V single
supply, or ±0.8V and ±2.5V dual supply applications.
It features very low supply current dissipation 70µA
per channel, which is well suitable for today's
low-voltage and/or portable systems.
•
•
•
•
The AZV831/AZV832 features optimal performance
in very low bias current of 1pA, which enables the IC
to be used for integrators, photodiode amplifiers, and
piezoelectric sensors etc. The device has typical
0.5mV input offset voltage and provides 1MHz
bandwidth.
•
•
The AZV831/AZV832 adopts the latest packaging
technology to meet the most demanding
space-constraint applications. The AZV831 is
available in standard SOT-23-5 and SC-70-5
packages. The AZV832 is offered in the traditional
MSOP-8 and SOIC-8 packages.
Applications
SC-70-5
•
•
•
•
•
•
SOT-23-5
Single Supply Voltage Range: 1.6V to 5.5V
Ultra-low Input Bias Current: 1pA (Typ.)
Offset Voltage: 0.5mV (Typ.), 2.5mV (Max.)
Rail-to-Rail Input
VCM: 300mV beyond Rails @ VCC=5V
Rail-to-Rail Output Swing:
10kΩ Load: 4mV from Rail
1kΩ Load: 25mV from Rail
Supply Current: 70µA/Amplifier
Unity Gain Stable
Gain Bandwidth Product: 1.0MHz
Slew Rate: 0.45V/µs @ VCC=5.0V
Operation Ambient Temperature Range: -40ºC
to 85ºC
Sensors
Photodiode Amplification
Battery-Powered Instrumentation
Pulse Blood Oximeter, Glucose Meter
SOIC-8
MSOP-8
Figure 1. Package Types of AZV831/AZV832
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
1
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Pin Configuration
KS/K Package
(SC-70-5/SOT-23-5)
OUTPUT
1
VEE
2
IN+
3
5
VCC
4
IN-
AZV831
M/MM Package
(SOIC-8/MSOP-8)
OUTPUT 1
1
8
VCC
IN 1-
2
7
OUTPUT 2
IN 1+
3
6
IN 2-
VEE
4
5
IN 2+
AZV832
Figure 2. Pin Configuration of AZV831/2 (Top View)
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
2
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Function Block Diagram
5
VCC
1
OUTPUT
+
-
IN-
IN+
Class
AB
Control
4
3
+
-
2
VEE
For AZV831
8
VCC
+
-
IN1-/IN2-
IN1+/IN2+
Class
AB
Control
2,6
1,7
OUTPUT1/
OUTPUT2
3,5
+
-
4
VEE
For AZV832/Amplifier
Figure 3. Functional Block Diagram of AZV831/2
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
3
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Ordering Information
AZV831/2
-
Circuit Type
G1: Green
Package
KS: SC-70-5 (AZV831)
K: SOT-23-5 (AZV831)
M: SOIC-8 (AZV832)
MM: MSOP-8 (AZV832)
Blank: Tube
TR: Tape & Reel
Package
Temperature
Range
SC-70-5
SOT-23-5
-40 to 85°C
-40 to 85°C
SOIC-8
-40 to 85°C
MSOP-8
-40 to 85°C
Part Number
AZV831KSTR-G1
AZV831KTR-G1
AZV832M-G1
AZV832MTR-G1
AZV832MM-G1
AZV832MMTR-G1
Marking ID
L3
G4D
832M-G1
832M-G1
832MM-G1
832MM-G1
Packing
Type
Tape & Reel
Tape & Reel
Tube
Tape & Reel
Tube
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
4
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Power Supply Voltage
VCC
6.0
V
Differential Input Voltage
VID
6.0
V
Input Voltage
VIN
-0.3 to VCC+0.5
V
Operating Junction Temperature
TJ
150
ºC
Thermal Resistance
(Junction to Ambient)
θJA
SC-70-5
SOT-23-5
SOIC-8
MSOP-8
270
220
150
200
ºC /W
Storage Temperature Range
TSTG
-65 to 150
ºC
Lead Temperature (Soldering,10 Seconds)
TLEAD
260
ºC
ESD (Human Body Model)
4000
V
ESD (Machine Model)
300
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Operation Ambient Temperature
Range
Jul. 2012
Symbol
Min
Max
Unit
VCC
1.6
5.5
V
TA
-40
85
ºC
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
5
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
1.6V DC Electrical Characteristics
VCC=1.6V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Input Offset Voltage
Conditions
Min Typ Max Unit
VOS
0.5
Input Bias Current
IB
1.0
pA
Input Offset Current
IOS
1.0
pA
Input Common-mode Voltage Range
VCM
Common-mode Rejection Ratio
-0.2
2.5
1.8
mV
V
CMRR
VCM=-0.2V to 1.8V
55
75
dB
Large Signal Voltage Gain
GV
RL=10kΩ to VCC/2,
VOUT=0.2V to 1.4V
90
110
dB
Input Offset Voltage Drift
∆VOS/∆T
2.0
µV/ °C
Output Voltage Swing from Rail
VOL/VOH
Output Current
Sink
Source
RL=1kΩ to VCC/2
30
50
RL=10kΩ to VCC/2
3
15
ISINK
VOUT=VCC
8
10
ISOURCE
VOUT=0V
5
8.5
Closed-loop Output Impedance
ZOUT
f=10kHz, AV=1
Power Supply Rejection Ratio
PSRR
VCC=1.6V to 5.0V
Supply Current (Per Amplifier)
ICC
66
VOUT=VCC/2, IOUT=0
mV
mA
9
Ω
80
dB
70
90
µA
1.6V AC Electrical Characteristics
VCC=1.6V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Gain Bandwidth Product
Symbol
GBP
Conditions
Min Typ Max Unit
RL=100kΩ
1.0
MHz
0.32
V/µs
Slew Rate (Note 2)
SR
1V Step,
CL=100pF, RL=10kΩ
Phase Margin
φM
RL=100kΩ
67
Degrees
f=1kHz, AV=1, VIN=1Vpp
RL=10kΩ, CL=100pF
-70
dB
f=1kHz
27
nV/ Hz
Total Harmonic Distortion+Noise
Voltage Noise Density
THD+N
en
Note 2: Number specified is the positive slew rate.
.
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
6
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
1.8V DC Electrical Characteristics
VCC=1.8V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Input Offset Voltage
Conditions
Min Typ Max Unit
VOS
0.5
Input Bias Current
IB
1.0
pA
Input Offset Current
IOS
1.0
pA
Input Common-mode Voltage Range
VCM
Common-mode Rejection Ratio
-0.2
2.5
2.0
mV
V
CMRR
VCM=-0.2V to 2.0V
55
75
dB
Large Signal Voltage Gain
GV
RL=10kΩ to VCC/2,
VOUT=0.2V to 1.6V
90
112
dB
Input Offset Voltage Drift
∆VOS/∆T
2.0
µV/ °C
Output Voltage Swing from Rail
VOL/VOH
25
50
RL=10kΩ to VCC/2
3
15
ISINK
VOUT=VCC
12
16
ISOURCE
VOUT=0V
10
14
Closed-loop Output Impedance
ZOUT
f=10kHz
Power Supply Rejection Ratio
PSRR
VCC=1.6V to 5.0V
Supply Current (Per Amplifier)
ICC
Output Current
Sink
RL=1kΩ to VCC/2
Source
66
VOUT=VCC/2, IOUT=0
mV
mA
9
Ω
80
dB
70
90
µA
1.8V AC Electrical Characteristics
VCC=1.8V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Gain Bandwidth Product
Symbol
GBP
Conditions
Min Typ Max Unit
RL=100kΩ
1.0
MHz
0.34
V/µs
Slew Rate (Note 2)
SR
1V Step,
CL=100pF, RL=10kΩ
Phase Margin
φM
RL=100kΩ
67
Degrees
f=1kHz, AV=1, VIN=1Vpp
RL=10kΩ, CL=100pF
-70
dB
f=1kHz
27
nV/ Hz
Total Harmonic Distortion+Noise
Voltage Noise Density
THD+N
en
Note 2: Number specified is the positive slew rate.
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
7
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
3.0V DC Electrical Characteristics
VCC=3.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Input Offset Voltage
Conditions
Min Typ Max Unit
VOS
0.5
Input Bias Current
IB
1.0
pA
Input Offset Current
IOS
1.0
pA
Input Common-mode Voltage Range
VCM
Common-mode Rejection Ratio
Large Signal Voltage Gain
CMRR
GV
Input Offset Voltage Drift
∆VOS/∆T
Output Voltage Swing from Rail
VOL/VOH
3.3
VCM=-0.3V to 1.8V
62
80
VCM=-0.3V to 3.3V
58
75
90
110
95
115
RL=1kΩ to VCC/2 ,
VOUT=0.2V to 2.8V
RL=10kΩ to VCC/2,
VOUT=0.1V to 2.9V
V
dB
µV/ °C
2.0
RL=1kΩ to VCC/2
20
50
RL=10kΩ to VCC/2
3
15
VOUT=VCC
50
60
ISOURCE
VOUT=0V
50
65
Closed-loop Output Impedance
ZOUT
f=10kHz
Power Supply Rejection Ratio
PSRR
VCC=1.6V to 5.0V
Supply Current (Per Amplifier)
ICC
Source
mV
dB
ISINK
Output Current
Sink
-0.3
2.5
66
VOUT=VCC/2, IOUT=0
mV
mA
9
Ω
80
dB
70
90
µA
3.0V AC Electrical Characteristics
VCC=3.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Gain Bandwidth Product
Symbol
GBP
Conditions
Min Typ Max Unit
RL=100kΩ
1.0
MHz
0.40
V/µs
Slew Rate (Note 2)
SR
G=1, 2V Step,
CL=100pF, RL=10kΩ
Phase Margin
φM
RL=100kΩ
67
Degrees
f=1kHz, G=1, VIN=1Vpp
RL=10kΩ, CL=100pF
-70
dB
f=1kHz
27
nV/ Hz
Total Harmonic Distortion+Noise
Voltage Noise Density
THD+N
en
Note 2: Number specified is the positive slew rate.
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
8
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
5.0V DC Electrical Characteristics
VCC=5.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Symbol
Input Offset Voltage
Conditions
Min Typ Max Unit
VOS
0.5
Input Bias Current
IB
1.0
pA
Input Offset Current
IOS
1.0
pA
Input Common-mode Voltage Range
VCM
Common-mode Rejection Ratio
Large Signal Voltage Gain
CMRR
GV
Input Offset Voltage Drift
∆VOS/∆T
Output Voltage Swing from Rail
VOL/VOH
Output Current
Sink
Source
-0.3
5.3
VCM=-0.3V to 3.8V
70
85
VCM=-0.3V to 5.3V
65
90
80
92
85
98
RL=1kΩ to VCC/2,
VOUT=0.2V to 4.8V
RL=10kΩ to VCC/2,
VOUT=0.05V to 4.95V
25
50
RL=10kΩ to VCC/2
4
15
150
ISOURCE
VOUT=0V
110
185
f=1kHz, AV=1
Supply Current (Per Amplifier)
ICC
µV/°C
RL=1kΩ to VCC/2
100
PSRR
V
dB
2.0
VOUT=VCC
Power Supply Rejection Ratio
mV
dB
ISINK
Closed-loop Output Impedance
2.5
VCC=1.6V to 5.0V
66
VOUT=VCC/2, IOUT=0
mV
mA
9
Ω
80
dB
70
90
µA
5V AC Electrical Characteristics
VCC=5.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.
Parameter
Gain Bandwidth Product
Symbol
GBP
Conditions
Min Typ Max
Unit
RL=100kΩ
1.0
MHz
0.45
V/µs
Slew Rate (Note 2)
SR
2V Step,
CL=100pF, RL=10kΩ
Phase Margin
φM
RL=100kΩ
67
Degrees
f=1kHz, AV=1, VIN=1VPP
RL=10kΩ,CL=100pF
-70
dB
f=1kHz
27
nV/ Hz
THD+N
THD+N
Voltage Noise Density
en
Note 2: Number specified is the positive slew rate.
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
9
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Typical Performance Characteristics
250
260
No Load
VOUT=1/2VCC
Dual Amplifiers
Supply Current (µA)
220
200
Supply Current (µA)
240
VCC=1.8V
VCC=1.6V
180
160
200
O
TA=85 C
150
O
TA=25 C
100
O
TA=-40 C
VCC=5.0V
VCC=3.0V
140
120
Dual Amplifiers
VOUT=VCC/2
IOUT=0mA
50
100
0
80
-40
-20
0
20
40
60
80
100
1.5
120
2.0
2.5
3.0
Figure 4. Supply Current vs. Temperature
5.0
5.5
VCC=1.8V
0
0
Input Offset Voltage (mV)
Input Offset Voltage (mV)
4.5
1
VCC=1.6V
-1
-2
-3
-4
o
TA=-40 C
o
TA=25 C
-5
0.0
0.5
1.0
-1
-2
-3
o
-4
TA=-40 C
o
TA=25 C
-5
o
TA=85 C
1.5
-6
-0.5
2.0
Input Common Mode Voltage (V)
o
TA=85 C
0.0
0.5
1.0
1.5
2.0
2.5
Input Common Mode Voltage (V)
Figure 6. Input Offset Voltage vs.
Input Common Mode Voltage
Jul. 2012
4.0
Figure 5. Supply Current vs. Supply Voltage
1
-6
-0.5
3.5
Supply Voltage (V)
O
Temperature ( C)
Figure 7. Input Offset Voltage vs.
Input Common Mode Voltage
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
10
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Typical Performance Characteristics (Continued)
1
4
VCC=3.0V
VCC=5.0V
0
Input Offset Voltage (mV)
Input Offset Voltage (mV)
2
-1
-2
-3
-4
o
TA=-40 C
o
TA=25 C
-5
0
-2
o
TA=-40 C
-4
o
TA=25 C
o
TA=85 C
-6
0
1
2
3
o
TA=85 C
-6
4
Input Common Mode Voltage (V)
Output Voltage to Supply Rail (mV)
Output Voltage to Supply Rail (mV)
1000
100
10
Sink Current
Source Current
0.1
1
3
4
5
6
VCC=1.8V, VEE=0V
100
10
Sink Current
Source Current
1
10
Output Current (mA)
0.1
1
10
Output Current (mA)
Figure 10. Output Voltage vs. Output Current
Jul. 2012
2
Figure 9. Input Offset Voltage vs.
Input Common Mode Voltage
VCC=1.6V, VEE=0V
1
1
Input Common Mode Voltage (V)
Figure 8. Input Offset Voltage vs.
Input Common Mode Voltage
1000
0
Figure 11. Output Voltage vs. Output Current
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
11
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Typical Performance Characteristics (Continued)
1000
Output Voltage to Supply Rail (mV)
Output Voltage to Supply Rail (mV)
10000
VCC=3.0V, VEE=0V
100
10
Sink Current
Source Current
1
0.01
0.1
1
VCC=5.0V, VEE=0V
1000
100
10
Sink Current
Source Current
1
0.01
10
0.1
1
Output Current (mA)
Figure 12. Output Voltage vs. Output Current
Output Short Circuit Current (Source) (mA)
Output Short Circuit Current (Sink) (mA)
200
VCC=1.6V
VCC=1.8V
VCC=3.0V
VCC=5.0V
VEE=0V
VOUT short to VCC
120
100
80
60
40
20
0
-40
-20
0
20
40
100
Figure 13. Output Voltage vs. Output Current
160
140
10
Output Current (mA)
60
80
100
o
Temperature ( C)
180
VEE=0V
VOUT short to VEE
160
140
VCC=1.6V
VCC=1.8V
VCC=3.0V
VCC=5.0V
120
100
80
60
40
20
0
-40
-20
0
20
40
60
80
100
o
Temperature ( C)
Figure 14. Output Short Circuit Current vs. Temperature Figure 15. Output Short Circuit Current vs. Temperature
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
12
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Typical Performance Characteristics (Continued)
160
Output Short Circuit Current (Source) (mA)
Output Short Circuit Current (Sink) (mA)
120
VEE=0V
VOUT short to VCC
100
80
60
40
20
VEE=0V
VOUT short to VEE
140
120
100
80
60
40
20
0
0
1
2
3
4
1
5
2
3
Figure 16. Output Short Circuit Current
vs. Supply Voltage
27
Output Voltage to Supply Rail (mV)
Output Voltage to Supply Rail (mV)
RL=10kΩ
3.5
Positive Swing
Negative Swing
3.0
2.5
2.0
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
RL=1kΩ
26
Positive Swing
Negative Swing
25
24
23
22
21
20
0.8
2.6
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
Dual Supply Voltage (V)
Dual Supply Voltage (V)
Figure 18. Output Voltage Swing vs. Supply Voltage
Jul. 2012
5
Figure 17. Output Short Circuit Current
vs. Supply Voltage
4.0
1.5
0.8
4
Supply Voltage (V)
Supply Voltage (V)
Figure 19. Output Voltage Swing vs. Supply Voltage
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
13
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Typical Performance Characteristics (Continued)
48
10
VCC=0.8V,VEE=-0.8V
VCC=2.5V,VEE=-2.5V
VCC=0.8V,VEE=-0.8V
VCC=2.5V,VEE=-2.5V
36
RL=1kΩ
32
28
Positive Swing
24
Negative Swing
20
16
12
-40
-20
0
20
40
60
80
7
RL=10kΩ
6
5
4
Negative Swing
3
2
Positive Swing
1
0
-40
100
-20
o
0
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
Figure 20. Output Voltage Swing vs. Temperature
Figure 21. Output Voltage Swing vs. Temperature
100
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
20
50
RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω
10
0
40
30
VCC=0.8V, VEE=-0.8V
-10
-20
10k
100k
Open Loop Gain (dB)
70
Phase Margin (Degree)
Open Loop Gain (dB)
VCC=0.9V,VEE=-0.9V
VCC=1.5V,VEE=-1.5V
VCC=0.9V,VEE=-0.9V
VCC=1.5V,VEE=-1.5V
8
0
-10
10
-20
40
30
VCC=0.8V, VEE=-0.8V
RL=100kΩ
20
10
10k
Frequency (Hz)
100k
1M
Frequency (Hz)
Figure 22. Gain and Phase vs. Frequency
with Resistive Load
Jul. 2012
CL=100pF
CL=200pF
CL=300pF
10
20
1M
50
20
Phase Margin (Degree)
40
9
Output Voltage to Supply Rail (mV)
Output Voltage to Supply Rail (mV)
44
Figure 23. Gain and Phase vs. Frequency
with Capacitive Load
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
14
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
100
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
20
50
0
40
30
VCC=0.8V, VEE=-0.8V
RL=10kΩ
-10
-20
10k
100k
10
0
20
-10
10
-20
40
30
20
10
1M
10k
Frequency (Hz)
100k
1M
Frequency (Hz)
Figure 24. Gain and Phase vs. Frequency
with Capacitive Load
Figure 25. Gain and Phase vs. Frequency
with Resistive Load
100
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
20
50
CL=100pF
CL=200pF
CL=300pF
VCC=0.9V, VEE=-0.9V
RL=100kΩ
10
0
-10
40
30
-20
10k
100k
50
20
CL=100pF
CL=200pF
CL=300pF
10
0
20
-10
10
-20
40
30
VCC=0.9V, VEE=-0.9V
RL=10kΩ
20
10
10k
1M
100k
1M
Frequency (Hz)
Frequency (Hz)
Figure 26. Gain and Phase vs. Frequency
with Capacitive Load
Jul. 2012
Open Loop Gain (dB)
70
Phase Margin (Degree)
Open Loop Gain (dB)
50
RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω
VCC=0.9V, VEE=-0.9V
Phase Margin (Degree)
10
Open Loop Gain (dB)
CL=100pF
CL=200pF
CL=300pF
20
Phase Margin (Degree)
70
Phase Margin (Degree)
Open Loop Gain (dB)
Typical Performance Characteristics (Continued)
Figure 27. Gain and Phase vs. Frequency
with Capacitive Load
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
15
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
100
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
50
RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω
0
40
30
VCC=1.5V, VEE=-1.5V
-10
-20
10k
100k
20
50
CL=100pF
CL=200pF
CL=300pF
10
0
20
-10
10
-20
1M
30
VCC=1.5V, VEE=-1.5V
RL=100kΩ
20
10
10k
100k
Frequency (Hz)
1M
Frequency (Hz)
Figure 28. Gain and Phase vs. Frequency
with Resistive Load
Figure 29. Gain and Phase vs. Frequency
with Capacitive Load
100
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
20
50
CL=100pF
CL=200pF
CL=300pF
10
0
40
30
VCC=1.5V, VEE=-1.5V
RL=10kΩ
-10
-20
10k
100k
20
0
-10
10
-20
1M
50
RL=100kΩ
RL=10kΩ
RL=1kΩ
RL=8Ω
10
20
40
30
VCC=2.5V, VEE=-2.5V
20
10
10k
Frequency (Hz)
100k
1M
Frequency (Hz)
Figure 30. Gain and Phase vs. Frequency
with Capacitive Load
Jul. 2012
Open Loop Gain (dB)
70
Phase Margin (Degree)
Open Loop Gain (dB)
40
Phase Margin (Degree)
10
Open Loop Gain (dB)
20
Phase Margin (Degree)
70
Phase Margin (Degree)
Open Loop Gain (dB)
Typical Performance Characteristics (Continued)
Figure 31. Gain and Phase vs. Frequency
with Resistive Load
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
16
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
70
100
60
90
60
90
50
80
50
80
40
70
40
70
30
60
30
60
20
50
CL=100pF
CL=200pF
CL=300pF
10
0
40
30
VCC=2.5V, VEE=-2.5V
RL=100kΩ
-10
-20
10k
100k
20
10
0
20
-10
10
-20
50
CL=100pF
CL=200pF
CL=300pF
40
30
VCC=2.5V, VEE=-2.5V
RL=10kΩ
Phase Margin (Degree)
100
Open Loop Gain (dB)
70
Phase Margin (Degree)
Open Loop Gain (dB)
Typical Performance Characteristics (Continued)
20
10
1M
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
Figure 32. Gain and Phase vs. Frequency
with Capacitive Load
Figure 33. Gain and Phase vs. Frequency
with Capacitive Load
1000
10
100
1
THD+N (%)
Output Impedance (Ω)
VCC=1.6V to 5V
VEE=0V
10
AV=1
AV=10
AV=100
1
100
1k
10k
AV=1, RL=10kΩ, CL=100pF
VCC=0.8V,VEE=-0.8V
VCC=0.9V,VEE=-0.9V
VCC=1.5V,VEE=-1.5V
VCC=2.5V,VEE=-2.5V
0.1
0.01
1E-3
0.01
100k
0.1
1
Frequency (Hz)
Output Voltage (V)
Figure 34. Output Impedance vs. Frequency
Figure 35. THD+N vs. Output Voltage
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
17
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Typical Performance Characteristics (Continued)
1
Bandwidth<10Hz to 22kHz
Input Voltage Noise (V/ Hz)
0.1
THD+N (%)
VCC=5.0V, VEE=0V, AV=1
VCC=0.8V, VEE=-0.8V
VCC=0.9V, VEE=-0.9V
VCC=1.5V, VEE=-1.5V
VCC=2.5V, VEE=-2.5V
0.01
1E-3
100n
VOUT=100mVRMS, AV=1, RL=10kΩ, CL=100pF
100
1k
10n
10k
Frequency (Hz)
VCC=1.6V
VEE=0V
VOUT
50mV/div
10k
Figure 37. Input Voltage Noise Density
VCC=1.8V
VEE=0V
VIN
50mV/div
VOUT
50mV/div
CL=100pF, RL=100kΩ, AV=1
CL=100pF, RL=100kΩ, AV=1
Time (2µs/div)
Time (2µs/div)
Figure 38. Small Signal Pulse Response
Jul. 2012
1k
Frequency (Hz)
Figure 36. THD+N vs. Frequency
VIN
50mV/div
100
Figure 39. Small Signal Pulse Response
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
18
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Typical Performance Characteristics (Continued)
VCC=3.0V
VEE=0V
VIN
50mV/div
VOUT
50mV/div
VIN
50mV/div
VOUT
50mV/div
CL=100pF, RL=100kΩ, AV=1
CL=100pF, RL=100kΩ, AV=1
Time (2µs/div)
Time (2µs/div)
Figure 40. Small Signal Pulse Response
VCC=1.6V
VEE=0V
VIN
500mV/div
VOUT
500mV/div
Figure 41. Small Signal Pulse Response
VCC=1.8V
VEE=0V
VIN
500mV/div
VOUT
500mV/div
CL=200pF, RL=100kΩ, AV=1
CL=200pF, RL=100kΩ, AV=1
Time (10µs/div)
Time (10µs/div)
Figure 42. Large Signal Pulse Response
Jul. 2012
VCC=5.0V
VEE=0V
Figure 43. Large Signal Pulse Response
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
19
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Typical Performance Characteristics (Continued)
VCC=3.0V
VEE=0V
VIN
1V/div
VCC=5.0V
VEE=0V
VIN
2V/div
VOUT
1V/div
VOUT
2V/div
CL=200pF, RL=100kΩ, AV=1
CL=200pF, RL=100kΩ, AV=1
Time (10µs/div)
Time (10µs/div)
Figure 44. Large Signal Pulse Response
Figure 45. Large Signal Pulse Response
VCC=1.6V
VEE=0V
VIN
500mV/div
VIN
500mV/div
VOUT
500mV/div
VOUT
500mV/div
CL=200pF, RL=10kΩ, AV=1
Jul. 2012
VCC=1.8V
VEE=0V
CL=200pF, RL=10kΩ, AV=1
Time (10µs/div)
Time (10µs/div)
Figure 46. Large Signal Pulse Response
Figure 47. Large Signal Pulse Response
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
20
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Typical Performance Characteristics (Continued)
VCC=3.0V
VEE=0V
VIN
1V/div
VIN
2V/div
VOUT
1V/div
VOUT
2V/div
CL=200pF, RL=10kΩ, AV=1
CL=200pF, RL=10kΩ, AV=1
Time (10µs/div)
Time (10µs/div)
Figure 48. Large Signal Pulse Response
VIN
VCC=2.5V
VEE=-2.5V
VIN
1V/div
Figure 49. Large Signal Pulse Response
VCC=2.5V
VEE=-2.5V
VIN
50mV/div
VOUT
VOUT
1V/div
VOUT
1V/div
CL=100pF, RL=100kΩ, AV=-50
VIN=0 to -100mV
f=1kHz, RL=10kΩ, VIN=6VPP, AV=1
Time (200µs/div)
Time (20µs/div)
Figure 50. No Phase Reversal
Jul. 2012
VCC=5.0V
VEE=0V
Figure 51. Overload Recovery Time
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
21
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Typical Performance Characteristics (Continued)
VIN
50mV/div
VCC=2.5V
VEE=-2.5V
VOUT
1V/div
CL=100pF, RL=100kΩ, AV =-50,
VIN=0 to -100mV
Time (20µs/div)
Figure 52. Overload Recovery Time
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
22
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Mechanical Dimensions
SC-70-5
Unit: mm(inch)
0°
2.000(0.079)
8°
2.200(0.087)
0.150(0.006)
0.350(0.014)
0.200(0.008)
1.150(0.045)
1.350(0.053)
2.150(0.085)
2.450(0.096)
0.260(0.010)
0.460(0.018)
0.525(0.021)REF
0.650(0.026)TYP
0.000(0.000)
0.100(0.004)
1.200(0.047)
1.400(0.055)
0.080(0.003)
0.150(0.006)
0.900(0.035) 0.900(0.035)
1.000(0.039) 1.100(0.043)
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
23
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Mechanical Dimensions (Continued)
SOT-23-5
Unit: mm(inch)
1.500(0.059)
1.700(0.067)
0.300(0.012)
0.600(0.024)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
MAX
1.450(0.057)
0.950(0.037)
TYP
0.150(0.006)
0.900(0.035)
1.300(0.051)
Jul. 2012
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
24
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Mechanical Dimensions (Continued)
SOIC-8
Jul. 2012
Rev. 1. 0
Unit: mm(inch)
BCD Semiconductor Manufacturing Limited
25
Preliminary Datasheet
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail
Input/Output CMOS Operational Amplifiers
AZV831/2
Mechanical Dimensions (Continued)
Jul. 2012
2.900(0.114)
3.100(0.122)
Unit: mm(inch)
0.200(0.008)
0.000(0.000)
4.700(0.185)
5.100(0.201)
0.410(0.016)
0.650(0.026)
MSOP-8
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
26
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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