Renesas CR03AM-12 Thyristor low power use Datasheet

CR03AM-12
Thyristor
Low Power Use
REJ03G0352-0200
Rev.2.00
Mar.01.2005
Features
• IT (AV) : 0.3 A
• VDRM : 600 V
• IGT : 100 µA
• Non-Insulated Type
• Glass Passivation Type
Outline
PRSS0003EA-A
(Package name:TO-92)
2
1. Cathode
2. Anode
3. Gate
3
1
3
2
1
Applications
Leakage protector, timer, and gas igniter
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
DC off-state voltageNote1
Rev.2.00,
Mar.01.2005,
page 1 of 7
Symbol
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
Voltage class
12
600
800
480
600
800
480
Unit
V
V
V
V
V
V
CR03AM-12
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
0.47
0.3
Unit
A
A
ITSM
20
A
I2 t
1.6
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.5
0.1
6
6
0.3
– 40 to +110
– 40 to +125
0.23
W
W
V
V
A
°C
°C
g
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine half wave
180° conduction, Ta = 47°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Symbol
IRRM
IDRM
Min.
—
—
Typ.
—
—
Max.
0.1
0.1
Unit
mA
mA
On-state voltage
VTM
—
—
1.8
V
Ta = 25°C, ITM = 4 A,
instantaneous value
Gate trigger voltage
VGT
—
—
0.8
V
Tj = 25°C, VD = 6 V,
Note3
IT = 0.1 A
Gate non-trigger voltage
VGD
0.2
—
—
V
Tj = 110°C, VD = 1/2 VDRM,
RGK = 1 kΩ
Gate trigger current
IGT
1
—
100Note2
µA
Tj = 25°C, VD = 6 V,
Note3
IT = 0.1 A
Holding current
IH
—
1.5
3
mA
Rth (j-a)
—
—
180
°C/W
Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
Junction to ambient
Thermal resistance
Test conditions
Tj = 110°C, VRRM applied
Tj = 110°C, VDRM applied,
RGK = 1 kΩ
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
3 IGT, VGT measurement circuit.
A1
3V
DC
IGS
IGT
A3
A2
RGK
1
1kΩ
Switch
2
60Ω
TUT
V1
6V
DC
VGT
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
Rev.2.00,
Mar.01.2005,
page 2 of 7
CR03AM-12
Performance Curves
101
7
5
3
2
Rated Surge On-State Current
20
Ta = 25°C
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
100
7
5
3
2
10–1
7
5
3
2
7
5
3
2
10–1
7
5
3
2
PG(AV) = 0.1W
VGT = 0.8V
(Tj = 25°C)
IGT = 100µA
(Tj = 25°C)
VGD = 0.2V
IFGM = 0.3A
6
4
2
2 3 4 5 7 101
2 3 4 5 7 102
103
7
5
3
2
Typical Example
102
7
5
3
2
101
7
5
3
2
100
–40 –20
0
20
40
60
80 100 120
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
1.0
0.9
Gate Trigger Voltage (V)
× 100 (%)
PGM = 0.5W
VFGM = 6V
5 710–12 3 5 7 100 2 3 5 7 101 2 3 5 7 1022 3 5
Distribution
0.7
Typical Example
IGT (25°C) = 35µA
0.6
0.5
0.4
0.3
0.2
0.1
0
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.2.00,
8
Gate Trigger Current vs.
Junction Temperature
10–2
0.8
10
Gate Characteristics
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
100
12
Conduction Time (Cycles at 60Hz)
Mar.01.2005,
page 3 of 7
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
7
5
3
2
14
On-State Voltage (V)
102
101
16
0
100
10–2
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
7
5
3
2
18
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
200
180
160
140
120
100
80
60
40
20
0
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
Time (s)
CR03AM-12
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
160
θ = 30°
0.3
0.2
θ
360°
0.1
0
Resistive,
inductive loads
0
0.1
0.2
0.4
0.3
120
Resistive,
inductive loads
Natural convection
100
80
60
40
θ = 30° 90° 180°
60° 120°
20
0
0.5
0
0.1
0.2
0.3
0.5
0.4
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
60°
θ = 30°
0.4
90°
120°
160
180°
0.3
0.2
θ
0.1
θ
360°
0
0.1
0.2
Ambient Temperature (°C)
Average Power Dissipation (W)
θ
360°
Average On-State Current (A)
0
Resistive loads
0.3
0.4
0.5
140
θ
120
360°
θ
Resistive loads
Natural convection
100
80
60
40
20
0
θ = 30° 60° 90° 120° 180°
0
0.1
0.2
0.3
0.4
0.5
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
0.5
Average Power Dissipation (W)
140
Average On-State Current (A)
0.5
0.4
θ = 30°
270°
180°
120°
90°
DC
60°
0.3
0.2
θ
360°
0.1
Resistive,
inductive loads
0
0
0.1
0.2
0.3
0.4
Average On-State Current (A)
Rev.2.00,
Ambient Temperature (°C)
0.4
180°
120°
90°
60°
Mar.01.2005,
page 4 of 7
0.5
160
Ambient Temperature (°C)
Average Power Dissipation (W)
0.5
Resistive,
inductive loads
Natural convection
140
θ
360°
120
θ = 30°
100
60°
90°
80
120°
180°
270°
DC
60
40
20
0
0
0.1
0.2
0.3
0.4
Average On-State Current (A)
0.5
RGK = 1kΩ
140
120
100
80
60
40
20
0
–40 –20
0
20
40
60
80 100 120
Tj = 110°C
Typical Example
140
120
100
80
60
40
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
RGK = 1kΩ
160
140
120
100
Tj = 25°C
80
Tj = 110°C
20
102
7
5
3
2
101
7
5
3
2
RGK = 1kΩ
Distribution
Typical Example
IGT (25°C) = 35µA
100
7
5
3
2
10–1
–60 –40 –20 0 20 40 60 80 100 120 140
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Repetitive Peak Reverse Voltage vs.
Junction Temperature
500
Typical Example
IGT(25°C) IH(1kΩ)
10µA
1.0mA
#1
26µA
1.1mA
#2
400
300
#1
#2
200
100
VD = 12V, Tj = 25°C
0
10–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
Mar.01.2005,
page 5 of 7
× 100 (%)
Rate of Rise of Off-State Voltage (V/µs)
Gate to Cathode Resistance (kΩ)
Rev.2.00,
160
Gate to Cathode Resistance (kΩ)
180
40
Breakover Voltage vs.
Gate to Cathode Resistance
Junction Temperature (°C)
200
60
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 1kΩ)
Typical Example
Holding Current (mA)
160
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
× 100 (%)
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
Breakover Voltage vs.
Junction Temperature
× 100 (%)
CR03AM-12
160
Typical Example
140
120
100
80
60
40
20
0
–40 –20
0
20
40
60
80 100 120
Junction Temperature (°C)
CR03AM-12
Gate Trigger Current (µA)
Gate Trigger Current vs.
Gate Current Pulse Width
104
7
5
4
3
2
Typical Example
IGT(DC)
# 1 16µA
# 2 65µA
#1
103
7
5
4
3
2
#2
Tj = 25°C
102
100
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Rev.2.00,
Mar.01.2005,
page 6 of 7
CR03AM-12
Package Dimensions
JEITA Package Code
RENESAS Code
SC-43A
PRSS0003EA-A
Package Name
MASS[Typ.]
TO-92
Unit: mm
0.23g
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Vinyl sack
500 Type name
Lead form
Vinyl sack
500 Type name – Lead forming code
Form A8
Taping
2000 Type name – TB
Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Mar.01.2005,
page 7 of 7
Standard order
code example
CR03AM-12
CR03AM-12-A6
CR03AM-12-TB
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