SSM3K102TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K102TU High Speed Switching Applications Unit: mm Ron = 154mΩ (max) (@VGS = 1.8 V) Ron = 99mΩ (max) (@VGS = 2.5 V) Ron = 71mΩ (max) (@VGS = 4.0 V) 2.1±0.1 Symbol Rating Unit Drain-Source voltage VDS 20 V Gate-Source voltage VGSS ± 12 V DC ID 2.6 Pulse IDP 5.2 PD (Note 1) 800 PD (Note 2) 500 Drain current Drain power dissipation 1 3 2 A 0.7±0.05 Characteristic 2.0±0.1 Absolute Maximum Ratings (Ta = 25°C) +0.1 0.3 -0.05 1.7±0.1 0.166±0.05 1.8V drive Low on-resistance: 0.65±0.05 • • mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C 1: Gate 2: Source 3: Drain Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. 2 (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain-Source breakdown voltage Symbol Test Conditions Min Typ. Max V (BR) DSS ID = 1 mA, VGS = 0 20 ⎯ ⎯ V (BR) DSX ID = 1 mA, VGS = −12 V 10 ⎯ ⎯ Unit V Drain cut-off current IDSS VDS = 20 V, VGS = 0 ⎯ ⎯ 1 μA Gate leakage current IGSS VGS = ±12V, VDS = 0 ⎯ ⎯ ±1 μA Vth VDS = 3 V, ID = 1 mA 0.4 ⎯ 1.0 V Forward transfer admittance ⏐Yfs⏐ VDS = 3 V, ID = 1.0 A (Note3) 3.6 6 ⎯ S ID = 1.0 A, VGS = 4.0 V (Note3) ⎯ 63 71 Drain-Source on-resistance RDS (ON) ID = 0.5 A, VGS = 2.5 V (Note3) ⎯ 80 99 ID = 0.2 A, VGS = 1.8 V (Note3) Gate threshold voltage mΩ ⎯ 115 154 Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 268 ⎯ pF Output capacitance Coss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 44 ⎯ pF Reverse transfer capacitance Crss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 34 ⎯ pF ton VDD = 10 V, ID = 0.25 A, ⎯ 9 ⎯ toff VGS = 0~2.5 V, RG = 4.7 Ω ⎯ 16 ⎯ ⎯ −0.85 −1.2 Switching time Turn-on time Turn-off time Drain-Source forward voltage VDSF ID = −2.6A, VGS = 0 V (Note3) ns V Note3: Pulse test 1 2007-11-01 SSM3K102TU Switching Time Test Circuit (a) Test Circuit (b) VIN 2.5 V OUT 2.5 V 90% IN 0V RG 0 10 μs VDD = 10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C Marking VDD (c) VOUT VDD 10% VDS (ON) 10% 90% tr ton tf toff Equivalent Circuit (top view) 3 3 KK2 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID=1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Take this into consideration when using the device. Handling Precaution When handling individual devices which are not yet mounted on a circuit board, be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 2 2007-11-01 SSM3K102TU ID - VDS 5 10 4.0 2.5 1 1.8 Drain Current ID (A) Drain current ID (A) 4 3 1.5 2 VGS=1.2V 1 Ta=85°C 0.1 25°C 0.01 -25°C 0.001 Common Source Ta=25°C Common Source VDS=3V 0.0001 0 0 0.2 0.4 0.6 0.8 Drain-Source voltage VDS (V) 1 0 RDS(ON) - VGS 200 Drain-Source on-resistance RDS(ON) (mΩ) 140 120 0.5A ID=0.2A 80 2 RDS(ON) - Ta Common Source 160 100 1 Gate-Source voltage VGS (V) 300 Common Source Ta=25°C 180 Drain-Source on-resistance RDS(ON) (mΩ) ID - VGS 10 1A 60 40 250 200 1.8V,0.2A 150 2.5V,0.5A 100 VGS=4V,ID=1A 50 20 0 0 0 1 2 3 4 5 6 7 8 Gate-Source voltage VGS (V) 9 10 -60 -40 -20 Vth - Ta 1 Common Source ID=1mA VDS=3V 160 Gate threshold voltage Vth(V) Drain-Source on-resistance RDS(ON) (mΩ) 180 140 1.8V 120 100 2.5V 80 VGS=4V 60 40 Common Source Ta=25°C 20 20 40 60 80 100 120 140 160 Ambient temperature Ta(℃) RDS(ON) - ID 200 0 0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 Ambient temperature Ta(°C) Drain current ID (A) 3 2007-11-01 SSM3K102TU |Yfs| - ID Drain reverse current IDR (A) |Yfs| (S) -25°C Ta=85°C 1.0 IDR - VDS 10 25°C Common Source VDS=3V Ta=25°C 0.1 Common Source VGS=0V Ta=25°C 1 D G IDR 0.1 -25°C S Ta=85°C 0.01 0.1 1 10 0 -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS (V) Drain current ID (A) C - VDS 1000 100 Common Source VGS=0V f=1MHz Ta=25°C Coss 100 tf 10 1 10 ton tr Crss 10 0.1 1 0.01 100 0.1 1 Drain current ID (A) Drain-Source voltage VDS (V) PD - Ta b 800 a: mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm b:mounted on ceramic board (25.4mm×25.4mm×0.8mm) Cu Pad :25.4mm×25.4mm 600 a 400 200 0 0 20 c 4 b a 100 Single pulse a:Mounted on ceramic board (25.4mm×25.4mm×0.8mm) Cu Pad :25.4mm×25.4mm b:Mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm c:Mounted on FR4 Board (25.4mm×25.4mm×1.6mm) Cu Pad :0.45mm×0.8mm×3 10 1 0.001 40 60 80 100 120 140 160 Ambient temperature Ta(°C) 10 Rth - tw 1000 Transient thermal impedance Rth(°C/W) 1000 Common Source VDD=10V VGS=0 to 2.5V Ta=25°C toff Ciss -1 t - ID 1000 Switching time t (ns) Capacitance C (pF) 25°C 0.001 0.01 Drain power dissipation PD(mW) Forward transfer admittance 10.0 0.01 0.1 1 10 Pulse w idth tw (S) 100 1000 2007-11-01 SSM3K102TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01