SUM110P04-04L Vishay Siliconix P-Channel 40-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0042 at VGS = - 10 V - 110 0.0062 at VGS = - 4.5 V - 110 VDS (V) - 40 • TrenchFET® Power MOSFET • New Package with Low Thermal Resistance Available RoHS* COMPLIANT S TO-263 G G D S Top View Ordering Information: SUM110P04-04L SUM110P04-04L (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)d TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °Cb Operating Junction and Storage Temperature Range ID V - 110 - 110 IDM - 240 IAS - 75 EAS 281 PD Unit 375c 3.75 A mJ W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient PCB Mountb RthJA 40 Junction-to-Case RthJC 0.4 °C/W Notes: a. Duty cycle ≤ 1 %. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72437 S-61964-Rev. C, 09-Oct-06 www.vishay.com 1 SUM110P04-04L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = - 250 µA - 40 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 40 V, VGS = 0 V -1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS VDS = - 40 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 40 V, VGS = 0 V, TJ = 175 °C - 250 ID(on) VDS = - 5 V, VGS = - 10 V - 120 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) Forward Transconductance VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.0063 0.0076 Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 15 V, ID = - 30 A 0.005 11200 VGS = 0 V, VDS = - 25 V, f = 1 MHz 1200 Qg Gate-Drain Chargec Gate Resistance Qgd Rg 3 Turn-On Delay Timec td(on) 25 Turn-Off Delay tr Fall Timec pF 1650 Qgs td(off) Ω S Gate-Source Chargec Timec µA 0.0062 20 Total Gate Chargec Rise Timec nA 0.0042 VGS = - 10 V, ID = - 30 A, TJ = 175 °C gfs V A 0.0034 VGS = - 4.5 V, ID = - 20 A a -3 235 VDS = - 20 V, VGS = - 10 V, ID = - 110 A 350 nC 45 65 VDD = - 20 V, RL = 0.18 Ω ID ≅ - 110 A, VGEN = - 10 V, Rg = 2.5 Ω tf Ω 40 30 45 190 300 110 165 ns b Source-Drain Diode Ratings and Characteristics (TC = 25 °C) IS Continuous Current Pulsed Current ISM Forward Voltagea Reverse Recovery Time VSD Peak Reverse Recovery Current Reverse Recovery Charge - 240 IF = - 85 A, VGS = 0 V trr IRM(REC) Qrr - 110 IF = - 85 A, di/dt = 100 A/µs A - 1.0 - 1.5 V 65 100 ns - 3.7 - 5.6 A 0.12 0.28 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72437 S-61964-Rev. C, 09-Oct-06 SUM110P04-04L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 200 240 175 VGS = 10 thru 5 V 200 160 I D - Drain Current (A) I D - Drain Current (A) 150 4V 120 80 125 100 75 TC = 125 °C 50 25 °C 40 25 3V - 55 °C 0 0.0 0 0 2 4 6 8 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 0.010 240 200 25 °C 160 125 °C 0.008 r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 120 80 40 VGS = 4.5 V VGS = 10 V 0.004 0.002 0.000 0 0 15 30 45 60 75 0 90 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 120 20 14000 12000 Ciss V GS - Gate-to-Source Voltage (V) C - Capacitance (pF) 0.006 10000 8000 6000 4000 Coss Crss 2000 VDS = 20 V ID = 110 A 16 12 8 4 0 0 0 5 10 15 20 25 30 35 40 0 50 100 150 200 250 300 350 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 72437 S-61964-Rev. C, 09-Oct-06 400 450 www.vishay.com 3 SUM110P04-04L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless noted 2.0 100 VGS = 10 V ID = 30 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 1.7 1.4 1.1 0.8 0.5 - 50 TJ = 25 °C TJ = 150 °C 10 1 - 25 0 25 50 75 100 125 150 175 0.0 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 48 ID = 250 µA 46 V (BR)DSS (V) I Dav (a) 100 IAV (A) at TA = 25 °C 10 44 42 1 IAV (A) at TA = 150 °C 40 38 0.1 0.0001 www.vishay.com 4 0.001 0.01 0.1 1 10 - 50 - 25 0 25 50 75 100 125 tin (Sec) TJ - Junction Temperature (°C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 150 175 Document Number: 72437 S-61964-Rev. C, 09-Oct-06 SUM110P04-04L Vishay Siliconix THERMAL RATINGS 300 1000 Limited by rDS(on) 10 µs 100 µs 100 I D - Drain Current (A) I D - Drain Current (A) 250 200 Limited by Package 150 100 1 ms 10 1 50 0 10 ms 100 ms dc TC = 25 °C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 TC - Case Temperature (°C) 1 10 100 VDS - Drain-to-Source Voltage (V) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 Single Pulse t1 t2 2. Per Unit Base = R thJA = 62.5 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72437. Document Number: 72437 S-61964-Rev. C, 09-Oct-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1