DSEC 60-03A DSEC 60-03AR HiPerFREDTM Epitaxial Diode IFAV = 2x30 A VRRM = 300 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 300 300 300 300 A Type C A ISOPLUS 247TM TO-247 AD Version A Version AR A C A DSEC 60-03A DSEC 60-03AR A C A C (TAB) A = Anode, C = Cathode Symbol IFRMS IFAVM Conditions Maximum Ratings TC = 145°C; rectangular, d = 0.5 TC = 135°C (AR-Version) 70 30 A A IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 A EAS TVJ = 25°C; non-repetitive IAS = 3 A; L = 180 µH 1.2 mJ IAR VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A -55...+175 175 -55...+150 °C °C °C 165 W 0.8...1.2 20...120 Nm N TVJ TVJM Tstg Ptot TC = 25°C Md * FC mounting torque mounting force with clip VISOL ** 50/60 Hz, RMS, t = 1 minute, leads-to-tab Weight typical 2500 6 V~ g * Verson A only; ** Version AR only Symbol IR ① Conditions Characteristic Values typ. max. VR = VRRM; TVJ = 25°C TVJ = 150°C VF ② IF = 30 A; RthJC Version A Version AR 10 1 TVJ = 150°C TVJ = 25°C RthCH 0.91 1.25 V V 0.9 1.1 K/W K/W K/W 0.25 trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C µA mA 30 ns 7 Isolated back surface * * Patent pending Features • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 • Version AR isolated and UL registered E153432 Applications • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating • Uninterruptible power supplies (UPS) • Ultrasonic cleaners and welders Advantages • Avalanche voltage rated for reliable operation • Soft reverse recovery for low EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf A Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0% ② Pulse Width = 300 µs, Duty Cycle < 2.0% IXYS reserves the right to change limits, Conditions and dimensions. © 2005 IXYS All rights reserved 0519 Data according to IEC 60747 and per diode unless otherwise specified 1-2 DSEC 60-03A DSEC 60-03AR 60 800 30 TVJ = 100°C nC A VR = 150V 40 VR = 150V 25 600 IF TVJ = 100°C A IRM Qr 20 IF = 60A TVJ=150°C IF = 60A IF = 30A IF = 30A 400 TVJ=100°C IF = 15A 15 IF = 15A TVJ= 25°C 20 10 200 5 0 0.0 0.5 1.0 VF V 0 100 1.5 Fig. 1 Forward current IF versus VF 0 A/µs 1000 -diF/dt 0 90 1.2 trr 14 TVJ = 100°C ns 600 A/µs 800 1000 -diF/dt 400 Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 1.4 200 TVJ = 100°C V VR = 150V 80 IF = 30A VFR Kf 0.8 70 IRM 60 0.6 0.6 IF = 30A IF = 15A Qr 10 0.4 50 0.4 0.2 40 0 40 80 120 °C 160 8 0 200 400 TVJ 600 800 1000 A/µs 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ tfr VFR IF = 60A 0.8 µs 1.0 tfr 12 1.0 1.2 Fig. 5 Recovery time trr versus -diF/dt 0.0 600 A/µs 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt 1 Constants for ZthJC calculation: K/W i 0.1 1 2 3 ZthJC Rthi (K/W) ti (s) 0.465 0.179 0.256 0.005 0.0003 0.04 0.01 0.001 0.0001 0.00001 DSEP30-03A/DSEC 60-03A 0.0001 0.001 0.01 s 0.1 NOTE: Fig. 2 to Fig. 6 shows typical values 1 t IXYS reserves the right to change limits, Conditions and dimensions. © 2005 IXYS All rights reserved 0519 Fig. 7 Transient thermal resistance junction to case 2-2