Renesas CA3338M Cmos video speed, 8-bit, 50 msps, r2r d/a converter Datasheet

DATASHEET
CA3338, CA3338A
FN1850
Rev 4.00
July 2004
CMOS Video Speed, 8-Bit, 50 MSPS, R2R D/A Converters
The CA3338 family are CMOS/SOS high speed R2R voltage
output digital-to-analog converters. They can operate from a
single +5V supply, at video speeds, and can produce
“rail-to-rail” output swings. Internal level shifters and a pin for
an optional second supply provide for an output range below
digital ground. The data complement control allows the
inversion of input data while the latch enable control
provides either feedthrough or latched operation. Both ends
of the R2R ladder network are available externally and may
be modulated for gain or offset adjustments. In addition,
“glitch” energy has been kept very low by segmenting and
thermometer encoding of the upper 3 bits.
The CA3338 is manufactured on a sapphire substrate to
give low dynamic power dissipation, low output capacitance,
and inherent latch-up resistance.
Features
• CMOS/SOS Low Power
• R2R Output, Segmented for Low “Glitch”
• CMOS/TTL Compatible Inputs
• Fast Settling: (Typ) to 1/2 LSB . . . . . . . . . . . . . . . . . . 20ns
• Feedthrough Latch for Clocked or Unclocked Use
• Accuracy (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 LSB
• Data Complement Control
• High Update Rate (Typ) . . . . . . . . . . . . . . . . . . . . . 50MHz
• Unipolar or Bipolar Operation
• Pb-free Available
Applications
Ordering Information
• TV/Video Display
PART
NUMBER
LINEARITY
(INL, DNL)
TEMP.
RANGE (°C)
PKG.
PACKAGE DWG. #
CA3338E
1.0 LSB
-40 to 85
16 Ld PDIP E16.3
CA3338EZ
(Note)
1.0 LSB
-40 to 85
16 Ld PDIP E16.3
(Pb-free)
CA3338AE
0.75 LSB
-40 to 85
16 Ld PDIP E16.3
CA3338AEZ
(Note)
0.75 LSB
-40 to 85
16 Ld PDIP E16.3
(Pb-free)
CA3338M
1.0 LSB
-40 to 85
CA3338MZ
(Note)
1.0 LSB
-40 to 85
CA3338AM
0.75 LSB
CA3338AMZ
(Note)
0.75 LSB
• Digital Waveform Generator
• Direct Digital Synthesis
Pinout
CA3338, CA3338A
(PDIP, SOIC)
TOP VIEW
D7
1
16 VDD
16 Ld SOIC M16.3
D6
2
15 LE
16 Ld SOIC M16.3
(Pb-free)
D5
3
14 COMP
D4
4
13 VREF+
-40 to 85
16 Ld SOIC M16.3
D3
5
12 VOUT
-40 to 85
16 Ld SOIC M16.3
(Pb-free)
D2
6
11 VREF -
D1
7
10 VEE
VSS
8
9 D0
Intersil Pb-free products employ special Pb-free material sets;
molding compounds/die attach materials and 100% matte tin plate
termination finish, which is compatible with both SnPb and Pb-free
soldering operations. Intersil Pb-free products are MSL classified at
Pb-free peak reflow temperatures that meet or exceed the Pb-free
requirements of IPC/JEDEC J Std-020B.
FN1850 Rev 4.00
July 2004
• High Speed Oscilloscope Display
Page 1 of 10
CA3338, CA3338A
Functional Diagram
16
13
VDD
VREF+
8R
LE
15
8R
12
8R
3-BIT
TO 7-LINE
THERMOMETER
ENCODER
14
COMP
D7
D6
D5
D4
D3
D2
D1
D0
VSS
VOUT
8R
4R
R
1
2
3
4
5
4R
LEVEL
SHIFTERS
FEEDTHROUGH
LATCHES
2R
2R
2R
6
2R
R
R
R
R
7
9
8
2R
2R
R
R
2R
11
VREF-
10
R 160
FN1850 Rev 4.00
July 2004
VEE
Page 2 of 10
CA3338, CA3338A
Absolute Maximum Ratings
Thermal Information
DC Supply-Voltage Range . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +8V
(VDD - VSS or VDD - VEE, Whichever is Greater)
Input Voltage Range
Digital Inputs (LE, COMP D0 - D7). . . . VSS - 0.5V to VDD + 0.5V
Analog Pins (VREF+, VREF -, VOUT) . . . .VDD - 8V to VDD + 0.5V
DC Input Current
Digital Inputs (LE, COMP, D0 - D7) . . . . . . . . . . . . . . . . . . 20mA
Recommended Supply Voltage Range . . . . . . . . . . . . . 4.5V to 7.5V
Thermal Resistance (Typical, Note 1)
JA (oC/W)
JC (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . .
90
N/A
SOIC Package . . . . . . . . . . . . . . . . . . .
100
N/A
Maximum Junction Temperature
Plastic Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .150oC
Maximum Storage Temperature Range, TSTG . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range (TA)
Plastic Package, E suffix, M suffix . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. JA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
PARAMETER
TA = 25oC, VDD = 5V, VREF+ = 4.608V, VSS = VEE = VREF - = GND, LE Clocked at 20MHz, RL  1 M,
Unless Otherwise Specified
TEST CONDITIONS
MIN
TYP
MAX
UNITS
8
-
-
Bits
-
-
1
LSB
-
-
0.75
LSB
CA3338
-
-
0.75
LSB
CA3338A
-
-
0.5
LSB
CA3338
-
-
0.75
LSB
CA3338A
-
-
0.5
LSB
-
-
0.25
LSB
-
MHz
ACCURACY
Resolution
Integral Linearity Error
See Figure 4
CA3338
CA3338A
Differential Linearity Error
Gain Error
Offset Error
See Figure 4
Input Code = FFHEX , See Figure 3
Input Code = 00HEX; See Figure 3
DIGITAL INPUT TIMING
Update Rate
To Maintain 1/2 LSB Settling
DC
50
Update Rate
VREF - = VEE = -2.5V, VREF+ = +2.5V
DC
20
-
MHz
Set Up Time tSU1
For Low Glitch
-
-2
-
ns
Set Up Time tSU2
For Data Store
-
8
-
ns
Hold Time tH
For Data Store
-
5
-
ns
Latch Pulse Width tW
For Data Store
-
5
-
ns
VREF - = VEE = -2.5V, VREF+ = +2.5V
-
25
-
ns
Latch Pulse Width tW
OUTPUT PARAMETERS
RL Adjusted for 1VP-P Output
Output Delay tD1
From LE Edge
-
25
-
ns
Output Delay tD2
From Data Changing
-
22
-
ns
Rise Time tr
10% to 90% of Output
-
4
-
ns
Settling Time tS
10% to Settling to 1/2 LSB
Output Impedance
VREF+ = 6V, VDD = 6V
Glitch Area
Glitch Area
FN1850 Rev 4.00
July 2004
VREF - = VEE = -2.5V,VREF+ = +2.5V
-
20
-
ns
120
160
200

-
150
-
pV/s
-
250
-
pV/s
Page 3 of 10
CA3338, CA3338A
TA = 25oC, VDD = 5V, VREF+ = 4.608V, VSS = VEE = VREF - = GND, LE Clocked at 20MHz, RL  1 M,
Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
REFERENCE VOLTAGE
VREF+ Range
(+) Full Scale, Note 2
VREF - + 3
-
VDD
V
VREF - Range
(-) Full Scale, Note 2
VEE
-
VREF+ - 3
V
VREF+ Input Current
VREF+ = 6V, VDD = 6V
-
40
50
mA
SUPPLY VOLTAGE
Static IDD or IEE
Dynamic IDD or IEE
LE = Low, D0 - D7 = High
-
100
220
A
LE = Low, D0 - D7 = Low
-
-
100
A
VOUT = 10MHz, 0V to 5V Square Wave
-
20
-
mA
Dynamic IDD or IEE
VOUT = 10MHz, 2.5V Square Wave
-
25
-
mA
VDD Rejection
50kHz Sine Wave Applied
-
3
-
mV/V
50kHz Sine Wave Applied
-
1
-
mV/V
2
-
-
V
VEE Rejection
DIGITAL INPUTS
D0 - D7, LE, COMP
High Level Input Voltage
Note 2
Low Level Input Voltage
Note 2
-
-
0.8
V
Leakage Current
-
1
5
A
Capacitance
-
5
-
pF
-
200
-
ppm/×oC
TEMPERATURE COEFFICIENTS
Output Impedance
NOTE:
2. Parameter not tested. but guaranteed by design or characterization.
FN1850 Rev 4.00
July 2004
Page 4 of 10
CA3338, CA3338A
Pin Descriptions
PIN
NAME
1
D7
2
D6
Input
3
D5
Data
4
D4
Bits
5
D3
(High = True)
6
D2
7
D1
8
VSS
9
D0
10
VEE
11
VREF -
12
VOUT
DESCRIPTION
INPUT
DATA
Most Significant Bit
LATCH
ENABLE
tD2
OUTPUT
VOLTAGE
Digital Ground
10%
1/ LSB
2
Latch Operation
Analog Output
Data is fed from input to output while LE is low: LE should be
tied low for non-clocked operation.
COMP
15
LE
16
VDD
Data Complement Control input. Active High
Latch Enable Input. Active Low
Digital Power Supply, +5V
Digital Signal Path
The digital inputs (LE, COMP, and D0 - D7) are of TTL
compatible HCT High Speed CMOS design: the loading is
essentially capacitive and the logic threshold is typically 1.5V.
The 8 data bits, D0 (weighted 20) through D7 (weighted 27),
are applied to Exclusive OR gates (see Functional Diagram).
The COMP (data complement) control provides the second
input to the gates: if COMP is high, the data bits will be inverted
as they pass through.
The input data and the LE (latch enable) signals are next
applied to a level shifter. The inputs, operating between the
levels of VDD and VSS , are shifted to operate between VDD
and VEE . VEE optionally at ground or at a negative voltage, will
be discussed under bipolar operation. All further logic elements
except the output drivers operate from the VDD and VEE
supplies.
The upper 3 bits of data, D5 through D7, are input to a 3-to-7
line bar graph encoder. The encoder outputs and D0 through
D4 are applied to a feedthrough latch, which is controlled by LE
(latch enable).
INPUT DATA
tW
DATA
FEEDTHROUGH
tH
tSU2
LATCHED
FIGURE 1. DATA TO LATCH ENABLE TIMING
FN1850 Rev 4.00
July 2004
90%
Reference Voltage Negative Input
14
LATCHED
1/ LSB
2
FIGURE 2. DATA AND LATCH ENABLE TO OUTPUT TIMING
Analog Ground
VREF+ Reference Voltage Positive Input
LATCH
ENABLE
tS
tr
Least Significant Bit. Input Data Bit
13
tSU1
tD1
Non-clocked operation or changing data while LE is low is not
recommended for applications requiring low output “glitch”
energy: there is no guarantee of the simultaneous changing of
input data or the equal propagation delay of all bits through the
converter. Several parameters are given if the converter is to
be used in either of these modes: tD2 gives the delay from the
input changing to the output changing (10%), while tSU2 and tH
give the set up and hold times (referred to LE rising edge)
needed to latch data. See Figures 1 and 2.
Clocked operation is needed for low “glitch” energy use. Data
must meet the given tSU1 set up time to the LE falling edge,
and the tH hold time from the LE rising edge. The delay to the
output changing, tD1 , is now referred to the LE falling edge.
There is no need for a square wave LE clock; LE must only
meet the minimum tW pulse width for successful latch
operation. Generally, output timing (desired accuracy of
settling) sets the upper limit of usable clock frequency.
Output Structure
The latches feed data to a row of high current CMOS drivers,
which in turn feed a modified R2R ladder network.
The “N” channel (pull down) transistor of each driver plus the
bottom “2R” resistor are returned to VREF - this is the (-) fullscale reference. The “P” channel (pull up) transistor of each
driver is returned to VREF+, the (+) full-scale reference.
In unipolar operation, VREF- would typically be returned to
analog ground, but may be raised above ground (see
specifications). There is substantial code dependent current
that flows from VREF+ to VREF - (see VREF+ input current in
specifications), so VREF - should have a low impedance path to
ground.
In bipolar operation, VREF - would be returned to a negative
voltage (the maximum voltage rating to VDD must be
Page 5 of 10
CA3338, CA3338A
observed). VEE , which supplies the gate potential for the
output drivers, must be returned to a point at least as negative
as VREF -. Note that the maximum clocking speed decreases
when the bipolar mode is used.
STRAIGHT LINE
FROM “0” SCALE
TO FULL SCALE
VOLTAGE
= IDEAL TRANSFER CURVE
= ACTUAL TRANSFER CURVE
The ideal 8-bit D/A would have an output equal to VREF - with an
input code of 00HEX (zero scale output), and an output equal to
255/256 of VREF+ (referred to VREF -) with an input code of
FFHEX (full scale output). The difference between the ideal and
actual values of these two parameters are the OFFSET and
GAIN errors, respectively; see Figure 3.
If the code into an 8-bit D/A is changed by 1 count, the output
should change by 1/255 (full scale output - zero scale output). A
deviation from this step size is a differential linearity error, see
Figure 4. Note that the error is expressed in fractions of the ideal
step size (usually called an LSB). Also note that if the (-)
differential linearity error is less (in absolute numbers) than 1 LSB,
the device is monotonic. (The output will always increase for
increasing code or decrease for decreasing code).
If the code into an 8-bit D/A is at any value, say “N”, the output
voltage should be N/255 of the full scale output (referred to the
zero scale output). Any deviation from that output is an integral
linearity error, usually expressed in LSBs. See Figure 4.
OUTPUT VOLTAGE AS A FRACTION OF VREF+ - VREF -
Note that OFFSET and GAIN errors do not affect integral
linearity, as the linearity is referenced to actual zero and full
scale outputs, not ideal. Absolute accuracy would have to also
take these errors into account.
GAIN ERROR
(SHOWN -)
255/256
= IDEAL TRANSFER CURVE
= ACTUAL TRANSFER CURVE
254/256
253/256
OFFSET
ERROR
(SHOWN +)
3/256
2/256
1/256
0
00
01
02
03
FD
FE
FF
INPUT CODE IN HEXADECIMAL (COMP = LOW)
FIGURE 3. D/A OFFSET AND GAIN ERROR
FN1850 Rev 4.00
July 2004
OUTPUT VOLTAGE
Static Characteristics
INTEGRAL LINEARITY
ERROR (SHOWN -)
A
B
C
0
00
A = IDEAL STEP SIZE (1/255 OF FULL
SCALE -“0” SCALE VOLTAGE)
B - A = +DIFFERENTIAL LINEARITY ERROR
C - A = -DIFFERENTIAL LINEARITY ERROR
INPUT CODE
FIGURE 4. D/A INTEGRAL AND DIFFERENTIAL LINEARITY
ERROR
Dynamic Characteristics
Keeping the full-scale range (VREF+ - VREF -) as high as
possible gives the best linearity and lowest “glitch” energy
(referred to 1V). This provides the best “P” and “N” channel
gate drives (hence saturation resistance) and propagation
delays. The VREF+ (and VREF - if bipolar) terminal should be
well bypassed as near the chip as possible.
“Glitch” energy is defined as a spurious voltage that occurs as
the output is changed from one voltage to another. In a binary
input converter, it is usually highest at the most significant bit
transition (7FHEX to 80HEX for an 8 bit device), and can be
measured by displaying the output as the input code alternates
around that point. The “glitch” energy is the area between the
actual output display and an ideal one LSB step voltage
(subtracting negative area from positive), at either the positive or
negative-going step. It is usually expressed in pV/s.
The CA3338 uses a modified R2R ladder, where the 3 most
significant bits drive a bar graph decoder and 7 equally weighted
resistors. This makes the “glitch” energy at each 1/8 scale
transition (1FHEX to 20HEX , 3FHEX to 40HEX , etc.) essentially
equal, and far less than the MSB transition would otherwise
display.
For the purpose of comparison to other converters, the output
should be resistively divided to 1V full scale. Figure 5 shows a
typical hook-up for checking “glitch” energy or settling time.
The settling time of the A/D is mainly a function of the output
resistance (approximately 160 in parallel with the load
resistance) and the load plus internal chip capacitance. Both
“glitch” energy and settling time measurements require very
good circuit and probe grounding: a probe tip connector such as
Tektronix part number 131-0258-00 is recommended.
Page 6 of 10
CA3338, CA3338A
CA3338
+5V
15 LE
CLOCK
+2.5V
-2.5V
1-7, 9
D0 - D7
8 DATA BITS
12
VOUT
16
+5V
REMOTE
VOUT
13
VREF+
VDD
R1
+
14
8
R3
PROBE TIP
OR BNC
CONNECTOR
+
VSS
R2
11
VREF -
COMP
10
VEE
+
DIGITAL
GROUND
ANALOG
GROUND
FUNCTION
CONNECTOR
R1
R2
R3
VOUT (P-P)
Probe Tip
82
62
N/C
1V
Match 93 Cable
BNC
75
160
93
1V
Match 75 Cable
BNC
18
130
75
1V
Match 50Cable
BNC
Short
75
50
0 79V
Oscilloscope Display
NOTES:
3. VOUT(P-P) is approximate, and will vary as ROUT of D/A varies.
4. All drawn capacitors are 0.1F multilayer ceramic/4.7F tantalum.
5. Dashed connections are for unipolar operation. Solid connection are for bipolar operation.
FIGURE 5. CA3338 DYNAMIC TEST CIRCUIT
+6V
4.7F TAN
+
0.1F
CER.
CA3338
15
LE
VOUT 12
1-7, 9
8 DATA
BITS
+
4.7F
TAN
0.1F
CER.
14
8
VDD
VREF+
COMPVREF VSS
+3.00V AT 25mA 14
392
1%
3
13
11
+
10k
9
+
1. Both VREF+ pin and 392 resistor should be
bypassed within 1/4 inch.
2. Keep nodal capacitance at CA3450 pin 3 as
low as possible.
UP TO 5 OUTPUT LINES
FOR R = 75, 3 LINES
FOR R = 50
R
VOUT1
6
R
VOUT = 1.5VPEAK
4, 5, 12, 13
R
392
1%
NOTES:
11
CA3450
-
1k
VEE 10
4.7F TAN
16
+5V
5pF
7, 8
D0 - D7
0.1F CER.
CLOCK
0.1F CER.
+
ADJUST
OFFSET
VOUTN
R
4.7F
TAN
-6V
3. VOUT Range = 3V at CA3450.
FIGURE 6. CA3338 AND CA3450 FOR DRIVING MULTIPLE COAXIAL LINES
FN1850 Rev 4.00
July 2004
Page 7 of 10
CA3338, CA3338A
TABLE 1. OUTPUT VOLTAGE vs INPUT CODE AND VREF
VREF+
VREF STEP SIZE
2.50V
5.00V 4.608V 2.56V
5.12V
-2.56V -2.50V
0
0
0
0.0200V 0.0195V 0.0180V 0.0200V 0.0195V
Input Code
111111112=FFHEX1 5.1000V 4.9805V 4.5900V 2.5400V 2.4805V
11111102=FEHEX
5.0800 4.9610 4.5720 2.5200 2.4610
•
•
•
100000012=81HEX
100000002=80HEX
011111112=7FHEX
HANDLING
All inputs and outputs of CMOS devices have a network for
electrostatic protection during handling. Recommended
handling practices for CMOS devices are described in
AN6525. “Guide to Better Handling and Operation of CMOS
Integrated Circuits.”
OPERATING
2.5800
2.5600
2.5400
2.5195
2.5000
2.4805
2.3220 0.0200 0.0195
2.3040 0.0000 0.0000
2.2860 - 0.0200 -0.0195
0.0200
0.0000
0.0195
0.0000
0.0180
0.0000
•
•
•
000000012=01HEX
000000002=00HEX
Operating and Handling Considerations
-2.5400 -2.4805
-2.5600 -2.5000
Applications
The output of the CA3338 can be resistively divided to match a
doubly terminated 50 or 75 line, although peak-to-peak swings
of less than 1V may result. The output magnitude will also vary
with the converter’s output impedance. Figure 5 shows such an
application. Note that because of the HCT input structure, the
CA3338 could be operated up to +7.5V VDD and VREF+ supplies
and still accept 0V to 5V CMOS input voltages.
OPERATING VOLTAGE
During operation near the maximum supply voltage limit, care
should be taken to avoid or suppress power supply turn-on and
turn-off transients, power supply ripple, or ground noise; any of
these conditions must not cause the absolute maximum ratings
to be exceeded.
INPUT SIGNALS
To prevent damage to the input protection circuit, input signals
should never be greater than VDD nor less than VSS . Input
currents must not exceed 20mA even when the power supply
is off.
UNUSED INPUTS
A connection must be provided at every input terminal. All
unused input terminals must be connected to either VCC or
GND, whichever is appropriate.
If larger voltage swings or better accuracy is desired, a high
speed output buffer, such as the HA-5033, HA-2542, or
CA3450, can be employed. Figure 6 shows a typical
application, with the output capable of driving 2V into multiple
50terminated lines.
FN1850 Rev 4.00
July 2004
Page 8 of 10
CA3338, CA3338A
Dual-In-Line Plastic Packages (PDIP)
E16.3 (JEDEC MS-001-BB ISSUE D)
N
16 LEAD DUAL-IN-LINE PLASTIC PACKAGE
E1
INDEX
AREA
1 2 3
INCHES
N/2
-B-
-AE
D
BASE
PLANE
-C-
SEATING
PLANE
A2
A
L
D1
e
B1
D1
B
0.010 (0.25) M
A1
eC
C A B S
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
-
0.210
-
5.33
4
A1
0.015
-
0.39
-
4
A2
0.115
0.195
2.93
4.95
-
B
0.014
0.022
0.356
0.558
-
C
L
B1
0.045
0.070
1.15
1.77
8, 10
eA
C
0.008
0.014
C
D
0.735
0.775
eB
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between English and
Metric dimensions, the inch dimensions control.
0.355
19.68
5
D1
0.005
-
0.13
-
5
E
0.300
0.325
7.62
8.25
6
E1
0.240
0.280
6.10
7.11
5
e
0.100 BSC
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
eA
0.300 BSC
3. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication No. 95.
eB
-
4. Dimensions A, A1 and L are measured with the package seated in JEDEC seating plane gauge GS-3.
L
0.115
N
5. D, D1, and E1 dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 inch (0.25mm).
6. E and eA are measured with the leads constrained to be perpendicular to datum -C- .
0.204
18.66
16
2.54 BSC
7.62 BSC
0.430
-
0.150
2.93
16
6
10.92
7
3.81
4
9
Rev. 0 12/93
7. eB and eC are measured at the lead tips with the leads unconstrained.
eC must be zero or greater.
8. B1 maximum dimensions do not include dambar protrusions. Dambar
protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3, E28.3,
E42.6 will have a B1 dimension of 0.030 - 0.045 inch (0.76 - 1.14mm).
FN1850 Rev 4.00
July 2004
Page 9 of 10
CA3338, CA3338A
Small Outline Plastic Packages (SOIC)
M16.3 (JEDEC MS-013-AA ISSUE C)
N
16 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE
INDEX
AREA
0.25(0.010) M
H
B M
INCHES
E
-B-
1
2
3
L
SEATING PLANE
-A-
h x 45o
A
D
-C-
e
A1
B
0.25(0.010) M
C
0.10(0.004)
C A M
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.0926
0.1043
2.35
2.65
-
A1
0.0040
0.0118
0.10
0.30
-
B
0.013
0.0200
0.33
0.51
9
C
0.0091
0.0125
0.23
0.32
-
D
0.3977
0.4133
10.10
10.50
3
E
0.2914
0.2992
7.40
7.60
4
e
µ
B S
0.050 BSC
1.27 BSC
-
H
0.394
0.419
10.00
10.65
-
h
0.010
0.029
0.25
0.75
5
L
0.016
0.050
0.40
1.27
6
N

NOTES:
MILLIMETERS
16
0o
16
8o
0o
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
7
8o
Rev. 0 12/93
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm (0.024
inch)
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.
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FN1850 Rev 4.00
July 2004
Page 10 of 10
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