VISHAY V20120CHM3-4W

New Product
V20120C, VI20120C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
FEATURES
TMBS
®
• Trench MOS Schottky technology
TO-220AB
• Low forward voltage drop, low power losses
TO-262AA
• High efficiency operation
K
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
2
3
1
V20120C
1
2
3
• Halogen-free according to IEC 61249-2-21 definition
VI20120C
PIN 1
PIN 2
PIN 1
PIN 2
PIN 3
CASE
PIN 3
K
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
120 V
IFSM
120 A
VF at IF = 10 A
0.64 V
TJ max.
150 °C
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Document Number: 89159
Revision: 23-Mar-11
VI20120C
120
UNIT
V
20
per device
Maximum average forward rectified current (fig. 1)
V20120C
IF(AV)
A
10
IFSM
120
A
dV/dt
10 000
V/μs
TJ, TSTG
- 40 to + 150
°C
For technical questions within your region, please contact one of the following:
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[email protected], [email protected], [email protected]
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V20120C, VI20120C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5 A
TA = 25 °C
IF = 10 A
Instantaneous forward voltage per diode
SYMBOL
VF (1)
IF = 5 A
TA = 125 °C
IF = 10 A
TA = 25 °C
VR = 90 V
TA = 125 °C
Reverse current per diode
TA = 25 °C
VR = 120 V
IR (2)
TA = 125 °C
TYP.
MAX.
UNIT
0.62
-
0.81
0.90
0.54
-
0.64
0.72
8
-
μA
6
-
mA
-
700
μA
14
45
mA
VI20120C
UNIT
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
RθJC
V20120C
2.8
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
TO-220AB
V20120C-M3/4W
TO-262AA
VI20120C-M3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.88
4W
50/tube
Tube
1.45
4W
50/tube
Tube
TO-220AB
V20120CHM3/4W
(1)
1.88
4W
50/tube
Tube
TO-262AA
VI20120CHM3/4W (1)
1.45
4W
50/tube
Tube
Note
(1) AEC-Q101 qualified
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For technical questions within your region, please contact one of the following:
Document Number: 89159
[email protected], [email protected], [email protected]
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V20120C, VI20120C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
100
Resistive or Inductive Load
Instantaneous Reverse Current (mA)
Average Forward Rectified Current (A)
25
20
15
10
5
Mounted on Specific Heatsink
0
25
50
75
100
125
150
TA = 100 °C
0.1
TA = 25 °C
0.01
175
10
20
30
40
50
60
70
80
90
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
10
10 000
D = 0.5
8
D = 0.3
6
D = 0.2
D = 1.0
D = 0.1
4
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
Junction Capacitance (pF)
Average Power Loss (W)
TA = 125 °C
1
0.001
0
T
2
D = tp/T
tp
8
10
1000
100
10
0
0
2
4
6
12
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
10
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
TA = 150 °C
10
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Document Number: 89159
Revision: 23-Mar-11
Junction to Case
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
V20120C, VI20120C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.185 (4.70)
0.175 (4.44)
0.154 (3.91)
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
TO-262AA
0.185 (4.70)
0.175 (4.44)
0.411 (10.45) MAX.
30° (TYP.)
(REF.)
0.250 (6.35) MIN.
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
K
0.950 (24.13)
0.920 (23.37)
1
PIN
2
0.510 (12.95)
0.470 (11.94)
0.350 (8.89)
0.330 (8.38)
3
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
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0.401 (10.19)
0.381 (9.68)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.35)
0.205 (5.20)
0.195 (4.95)
For technical questions within your region, please contact one of the following:
Document Number: 89159
[email protected], [email protected], [email protected]
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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