Comchip CZRB3011 Surface mount zener diode Datasheet

Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
CZRB3011 Thru CZRB3100
Voltage: 11 - 100 Volts
Power: 3.0 Watt
Features
- For surf ace mounted applications in order to
optimize board space
- Low profile package
- Built-in strain relief
- Glass passivated junction
- Low inductance
- Excellent clamping capability
- Typical ID less than 1uA above 11V
- High temperature soldering 260°C /10
seconds at terminals
- Plastic package has underwriters laboratory
flammability classification 94V-O
SMB/DO-214AA
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
0.008(0.20)
0.203(0.10)
Mechanical data
- Case: JEDEC DO-214AA, Molded plastic
over passivated junction
- Terminals: Solder plated, solderable per MILSTD-750, method 2026
- Polarity: Color band denotes positive end
(cathode) except Bidirectional
- Standard Packaging: 12mm tape (EIA-481)
- Weight: 0.002 ounce, 0.064 gram
Dimensions in inches and (maillimeter)
Maximum Ratings and Electrical Characterics
Ratings at 25°C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation (Note A)
Derate above 75
Peak forward Surge Current 8.3ms single half s ine-wave superimposed
on rated load (JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
MDS0303002A
Symbol
Value
3
24
Units
Watts
mW/°C
IFSM
15
Amps
TJ,TSTG
-55 to +150
°C
PD
Page 1
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) (V F=1.2Volts Max, IF=500mA for all types.)
Device
(Note 1.)
CZRB3011
CZRB3012
CZRB3013
CZRB3014
CZRB3015
CZRB3016
CZRB3017
CZRB3018
CZRB3019
CZRB3020
CZRB3022
CZRB3024
CZRB3027
CZRB3028
CZRB3030
CZRB3033
CZRB3036
CZRB3039
CZRB3043
CZRB3047
CZRB3051
CZRB3056
CZRB3062
CZRB3068
CZRB3075
CZRB3082
CZRB3091
CZRB3100
Nominal
Zener
Voltage VZ
@ IZT
(Note 2.)
Test
current
IZT
(Volts)
11
12
13
14
15
16
17
18
19
20
22
24
27
28
30
33
36
39
43
47
51
56
62
68
75
82
91
100
Maximum Zener Impedance
(Note 3.)
Leakage Current
Surge
Maximum
Current
Zener
@TA=25°C
Current IZM
(Note 4.)
ZZT @ IZT
ZZK @ IZK
(mA)
(Ohms)
(Ohms)
(mA)
(uA)
(Volts)
Madc
Ir - mA
68
63
58
53
50
47
44
42
40
37
34
31
28
27
25
23
21
19
17
16
15
13
12
11
10
9.1
8.2
7.5
4
4.5
4.5
5
5.5
5.5
6
6
7
7
8
9
10
12
16
20
22
28
33
38
45
50
55
70
85
95
115
160
700
700
700
700
700
700
750
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
8.4
9.1
9.9
10.6
11.4
12.2
13
13.7
14.4
15.2
16.7
18.2
20.6
21
22.5
25.1
27.4
29.7
32.7
35.6
38.8
42.6
47.1
51.7
56
62.2
69.2
76
225
246
208
193
180
169
150
159
142
135
123
112
100
96
90
82
75
69
63
57
53
48
44
40
36
33
30
27
1.82
1.66
1.54
1.43
1.33
1.25
1.18
1.11
1.05
1.00
0.91
0.83
0.74
0.71
0.67
0.61
0.56
0.51
0.45
0.42
0.39
0.36
0.32
0.29
0.27
0.24
0.22
0.20
IZK
IR
VR
NOTE:
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms +- 10ms
from the diode body, and an ambient temperature of 25 °C (+8°C , -2°C ).
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having
an rms falue equal to 10% of the dc zener current (I ZT or IZK) is superimposed on IZT or IZK.
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge
current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards,
however, actual device capability is as described in Figure 3.
MDS0303002A
Page 2
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CZRB3011 Thru CZRB3100)
30
D = 0.5
TRANSIENT THERMAL
RESISTANCE
JUNCTION-TO-LEAD(°C/W)
20
10
0.2
7
5
0.1
3
2
0.05
1
0.02
0.7
0.5
0.01
0.3
0.0001 0.0002
NOTE BELOW 0.1 SECOND,
THERMAL RESPONSE
CURVE IS APPLICABLE TO
ANY LEAD LENGTH (L)
D=0
0.0005
0.001
0.002
0.005
0.01
0.02
0.05
SINGLE PULSE
TJL = JL(t)PPK
REPETITIVE PULSES TJL =
JL(t,D)PPK
0.1
0.2
0.5
1
2
5
10
Fig. 2-TYPICAL THERMAL RESPONSE L,
300
IR, REVERSE LEADAGE(uAdc)
@VR AS SPECIFIED IN ELEC.
CHAR. TABLE
500
RECTANGULAR NONREPETITIVE
WAVEFORM TJ = 25°C PRIOR TO
INITIAL PULSE
200
100
50
30
20
10
.1
.2 .3
5
1
2 3 5
10
20
50
100
0.1
0.05
0.03
0.02
0.01
0.005
0.003
0.002
0.001
0.0005
0.0003
0.0002
0.0001
1
2
5
10
20
50
100
200
500
1K
P.W. PULSE WIDTH (ms)
NOMINAL VZ (VOLTS)
Fig. 3-MAXIMUM SURGE POWER
Fig. 4-TYPICAL REVERSE LEAKAGE
8
6
4
2
0
RANGE
-2
-4
3
4
6
8
10
12
VZ, ZENER VOLTAGE @IZT (VOLTS)
TEMPERATURE
COEFFICIENT(mV/°C) @ IZT
TEMPERATURE
COEFFICIENT(mV/°C ) @ IZT
PPK, PEAK SURGE POWER(WATTS)
1K
200
100
RANGE
50
40
30
20
10
0
20
40
60
80
100
VZ, ZENER VOLTAGE @IZT (VOLTS)
Fig. 5 - UNITS TO 12 VOLTS
MDS0303002A
Fig. 6 - UNITS 10 TO 100 VOLTS
Page 3
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CZRB3011 Thru CZRB3100)
100
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2 3
4
5
6 7
8
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
9 10
10
20 30 40 50 60
JUNCTION-LEAD THERMAL
RESISTANCE (°C/W)
100
VZ, ZENER VOLTAGE (VOLTS)
VZ, ZENER VOLTAGE (VOLTS)
80
70
60
70 80 90
PRIMARY PATH OF
CONDUCTION IS THROUGH
THE CATHODE LEAD
50
40
30
20
10
0
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
TYPICAL THERMAL RESISTANCE
MDS0303002A
Page 4
Surface Mount Zener Diode
COMCHIP
www.comchip.com.tw
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, T L, should be determined from:
TL = șLAPD + TA
șLA is the lead-to-ambient thermal resistance (°C/W)
and PD is the power dissipation. The value for șLA will
vary and depends on the device mounting method.
șLA is generally 30-40 °C/W for the various chips and
tie points in common use and for printed circuit board
wiring.
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible to
the tie point. The thermal mass connected to the tie point
is normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result
of pulsed operation once steady-state conditions are
achieved. Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL + ¨TJL
MDS0303002A
¨TJL is the increase in junction temperature above the
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
¨TJL = șLAPD
For worst-case design, using expected limits of Iz, limits
of PD and the extremes of TJ (¨TJL ) may be estimated.
Changes in voltage, Vz, can then be found from:
¨V = șVZ ¨TJ
șVZ , the zener voltage temperature coefficient, is
found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage
will vary with time and may also be affected significantly
be the zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 2 should not be used to compute surge
capability. Surge limitations are given in Figure 3. They
are lower than would be expected by considering only
junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting
in device degradation should the limits of Figure 3 be
exceeded.
Page 5
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