Vishay DG419BDY-T1 Precision monolithic quad spst cmos analog switch Datasheet

DG417B/418B/419B
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
FEATURES
The DG417B/418B/419B monolithic CMOS analog switches
were designed to provide high performance switching of
analog signals. Combining low power, low leakages, high
speed, low on-resistance and small physical size, the
DG417B series is ideally suited for portable and battery
powered industrial and military applications requiring high
performance and efficient use of board space.
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To achieve high-voltage ratings and superior switching
performance, the DG417B series is built on Vishay
Siliconix’s high voltage silicon gate (HVSG) process.
Break-before-make is guaranteed for the DG419B, which is
an SPDT configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
The DG417B and DG418B respond to opposite control logic
levels as shown in the Truth Table.
± 15 V Analog Signal Range
On-Resistance - rDS(on): 15 Ω
Fast Switching Action - tON: 110 ns
TTL and CMOS Compatible
MSOP-8 and SOIC-8 Package
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
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Widest Dynamic Range
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
Reduced Board Space
Improved Reliability
APPLICATIONS
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Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample-and-Hold Circuits
Military Radios
Guidance and Control Systems
Hard Disk Drivers
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417B
Dual-In-Line, SOIC-8 and MSOP-8
S
1
8
D
NC
2
7
V-
GND
3
6
IN
V+
4
5
VL
Top View
TRUTH TABLE
Logic
0
1
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
DG417B
ON
OFF
DG418B
OFF
ON
DG419B
Dual-In-Line, SOIC-8 and MSOP-8
D
1
8
S2
S1
2
7
V-
GND
V+
6
3
5
4
IN
VL
Top View
TRUTH TABLE - DG419B
Logic
SW1
SW2
0
ON
OFF
1
OFF
ON
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72107
S-71009–Rev. C, 14-May-07
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1
DG417B/418B/419B
Vishay Siliconix
ORDERING INFORMATION
Temp Range
DG417B/418B
Package
Part Number
8-Pin Plastic MiniDIP
- 40 to 85 °C
8-Pin Narrow SOIC
DG417BDJ
DG417BDJ-E3
DG418BDJ
DG418BDJ-E3
DG417BDY
DG417BDY-E3
DG417BDY-T1
DG417BDY-T1-E3
DG418BDY
DG418BDY-E3
DG418BDY-T1
DG418BDY-T1-E3
DG417BDQ-T1-E3
8-Pin MSOP
DG418BDQ-T1-E3
DG419B
8-Pin Plastic MiniDIP
DG419BDJ
DG419BDJ-E3
8-Pin Narrow SOIC
DG419BDY
DG419BDY-E3
DG419BDY-T1
DG419BDY-T1-E3
8-Pin MSOP
DG419BDQ-T1-E3
- 40 to 85 °C
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
V-
- 20
V+
20
GND
VL
Unit
25
Digital Inputsa, VS, VD
Current, (Any Terminal) Continuous
Current (S or D) Pulsed at 1 ms, 10 % duty cycle
100
Storage Temperature
- 65 to 150
8-Pin Plastic MiniDIP
b
Power Dissipation (Package)
8-Pin Narrow SOICc
8-Pin MSOP
V
(GND - 0.3 V) to (V+) + 0.3
(V-) - 2 V to (V+) + 2
or 30 mA, whichever occurs first
30
d
8-Pin CerDIPe
c
mA
°C
400
400
400
mW
600
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 5.3 mW/°C above 75 °C.
d. Derate 4 mW/°C above 70 °C.
e. Derate 8 mW/°C above 75 °C.
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Document Number: 72107
S-71009–Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
VL
VLevel
Shift/
Drive
VIN
V+
GND
D
V-
Figure 1.
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Analog Switch
Symbol
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
rDS(on)
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
IS = - 10 mA, VD = ± 12.5 V
V+ = 13.5 V, V- = - 13.5 V
Room
Full
Full
IS(off)
Switch Off Leakage Current
ID(off)
V+ = 16.5, V- = - 16.5 V
DG417B
VD = ± 15.5 V, VS = ± 15.5 V DG418B
DG419B
Channel On Leakage Current
ID(on)
Typc
V+ = 16.5 V, V- = - 16.5 V
VS = VD = ± 15.5 V
DG417B
DG418B
DG419B
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
- 15
15
- 15
25
34
15
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
Maxd
Unit
15
V
25
29
Ω
nA
- 0.25
- 20
- 0.25
- 20
- 0.75
- 60
- 0.4
- 40
- 0.75
- 60
0.25
20
0.25
20
0.75
60
0.4
40
0.75
60
- 0.25
-5
- 0.25
-5
- 0.75
- 12
- 0.4
- 10
- 0.75
- 12
0.25
5
0.25
5
0.75
12
0.4
10
0.75
12
Digital Control
Input Current, VIN Low
IIL
Full
- 0.5
0.5
- 0.5
0.5
Input Current, VIN High
IIH
Full
- 0.5
0.5
- 0.5
0.5
µA
Dynamic Characteristics
Turn-On Time
tON
RL = 300 Ω, CL = 35 pF
Turn-Off Time
tOFF
VS = ± 10 V, See Switching
Time Test Circuit
Transition Time
tTRANS
RL = 300 Ω, CL = 35 pF
VS1 = ± 10 V, VS2 = ± 10 V
RL = 300 Ω, CL = 35 pF
DG417B
DG418B
DG417B
DG418B
Room
Full
Room
Full
DG419B
Room
Full
60
DG419B
Room
16
62
53
Break-Before-Make
Time Delay
tD
Charge Injection
Q
CL = 10 nF
Vgen = 0 V, Rgen = 0 Ω
Room
4
OIRR
RL = 50 Ω, CL = 5 pF,
f = 1 MHz
Room
- 86
Room
- 87
Off Isolatione
Channel-to-Channel
Crosstalke
Document Number: 72107
S-71009–Rev. C, 14-May-07
XTALK
VS1 = VS2 = ± 10 V
DG419B
3
89
106
80
88
89
99
80
86
87
96
87
93
ns
3
pC
dB
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DG417B/418B/419B
Vishay Siliconix
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
Parameter
Source Off Capacitance
Symbol
CS(off)
Drain Off Capacitancee
CD(off)
e
Channel On Capacitancee
CD(on)
VL = 5 V, VIN = 2.4 V, 0.8 Vf
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
DG417B
DG418B
DG417B
DG418B
DG419B
Tempb
Room
Typc
Room
12
Room
50
Room
57
Room
Full
Room
Full
Room
Full
Room
Full
0.001
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Mind
Maxd
Maxd
Unit
12
pF
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
Logic Supply Current
IL
Ground Current
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
IGND
- 0.001
1
5
-1
-5
0.001
- 0.001
1
5
-1
-5
1
5
-1
-5
1
5
µA
-1
-5
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
Parameter
Analog Switch
Symbol
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
rDS(on)
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Tempb
IS = - 10 mA, VD = 3.8 V
V+ = 10.8 V,
Room
Full
Typc
Full
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Mind
Maxd
Mind
Maxd
Unit
0
12
0
26
12
V
35
52
35
45
Ω
125
155
66
73
125
143
66
69
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
tON
RL = 300 Ω, CL = 35 pF
tOFF
VS = 8 V, See Switching
Time Test Circuit
tD
Transition Time
tTRANS
Charge Injection
Q
RL = 300 Ω, CL = 35 pF
Room
Full
Room
Full
100
38
DG419B Room
62
VS1 = 0 V, 8 V, VS2 = 8 V, 0 V
Room
Full
95
CL = 10 nF, Vgen = 0 V, Rgen = 0 Ω
Room
3
Room
Full
0.001
Room
- 0.001
Room
0.001
Room
- 0.001
RL = 300 Ω, CL = 35 pF
25
ns
25
119
153
119
141
pC
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
Logic Supply Current
IL
Ground Current
IGND
V+ = 13.2 V, VL = 5.25 V
VIN = 0 or 5 V
1
5
-1
-5
1
5
-1
-5
1
5
-1
-5
1
5
µA
-1
-5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72107
S-71009–Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
40
TA = 25 °C
VL = 5 V
250
200
V+ = 3.0 V
VL = 3 V
150
V+ = 12.0 V
100
V+ = 5.0 V
50
V+ = 15.0 V
V+ = 8.0 V
TA = 25 °C
rDS(on) – Drain-Source On-Resistance ( )
rDS(on) – Drain-Source On-Resistance ( )
300
V+ = 20.0 V
35
30
25
±8V
20
4
8
12
16
± 10 V
± 12 V
± 15 V
15
10
± 20 V
0
0
±5V
5
- 20
20
- 15
- 10
-5
VD – Drain Voltage (V)
rDS(on) – Drain-Source On-Resistance ( )
rDS(on) – Drain-Source On-Resistance ( )
25
125 °C
20
85 °C
15
25 °C
- 55 °C
10
125 °C
40
35
85 °C
30
25 °C
25
- 55 °C
20
15
V+ = 12 V
V- = 0 V
VL = 5 V
10
5
- 10
-5
0
5
10
0
15
2
4
6
8
10
12
VD – Drain Voltage (V)
VD – Drain Voltage (V)
On-Resistance vs. VD and Temperature
100 m
100
V ± = ± 15 V
VL = 5 V
TA = 25 °C
I+ – Supply Current (nA)
10 m
40
ID, IS (pA)
20
45
On-Resistance vs. VD and Temperature
ID(on)
ID(off)
20
0
IS(off)
- 20
- 40
V ± = ± 15 V
VL = 5 V
1m
100 µ
I+, I-
10 µ
IL
1µ
100 n
10 n
- 60
- 80
- 100
-15
15
50
V ± = ± 15 V
VL = 5 V
60
10
On-Resistance vs. VD and Dual Supply Voltage
30
80
5
VD – Drain Voltage (V)
On-Resistance vs. VD and Unipolar Power Supply Voltage
5
- 15
0
1n
- 10
-5
0
5
10
VD or VS – Drain or Source Voltage (V)
Leakage vs. Analog Voltage
Document Number: 72107
S-71009–Rev. C, 14-May-07
15
100 p
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
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DG417B/418B/419B
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
140
VL = 5 V
V ± = ± 15 V
VL = 5 V
90
120
80
tON V = 12 V
80
tON V = ± 15 V
tOFF V = ± 15 V
60
t ON , t OFF (ns)
t ON , t OFF (ns)
100
70
tTRANS-
60
tTRANS+
50
40
tOFF V = 12 V
40
30
20
- 55
- 35
- 15
5
25
45
65
85
105
20
- 55
125
- 35
- 15
5
140
65
85
105
125
10
V+ = 12 V
V– = 0 V
VL = 5 V
- 10
Loss, OIRR, X TALK (dB)
120
t ON , t OFF (ns)
45
Transition Time vs. Temperature
Switching Time vs. Temperature
tTRANS-
100
80
tTRANS+
60
Loss
- 30
XTALK
OIRR
- 50
- 70
V+ = 3 V
V– = 0 V
RL = 50
- 90
40
20
- 55
- 110
- 35
- 15
5
25
45
65
85
105
125
100 k
1M
10 M
Temperature ( C)
100 M
1G
Frequency (Hz)
Insertation Loss, Off -Isolation Crosstalk vs. Frequency
Transition Time vs. Temperature
30
3.0
25
VL = 5 V
C = 10 nF
20
Q – Charge Injection (pC)
2.5
VT – Switching Threshold (V)
25
Temperature ( C)
Temperature ( C)
2.0
1.5
1.0
15
10
V = ± 15 V
5
0
V+ = 12 V
-5
- 10
- 15
- 20
0.5
- 25
0.0
4
6
8
10
12
14
16
18
V+ – Supply Voltage (V)
Switching Threshold vs. Supply Voltage
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6
20
- 30
- 15 - 12
-9
-6
-3
0
3
6
9
12
15
VS – Analog Voltage (V)
Charge Injection vs. Analog Voltage
Document Number: 72107
S-71009–Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
TEST CIRCUITS
VO is the steady state output with the switch on.
+5V
+ 15 V
3V
Logic
Input
VL
tr < 5 ns
tf < 5 ns
50 %
V+
S
0V
D
VO
10 V
tOFF
IN
CL
35 pF
RL
300
V–
GND
- 15 V
CL (includes fixture and stray capacitance)
Switch
Input
VS
Switch
Output
0V
Note:
RL
VO = VS
VO
90 %
tON
Logic input waveform is inverted for switches that have the
opposite logic sense.
RL + rDS(on)
Figure 2. Switching Time (DG417B/418B)
+5V
+1V
Logic
Input
VL
VS1
VS2
V+
S1
tr < 5 ns
tf < 5 ns
3V
0V
D
VO
S2
RL
300
IN
Switch
Output
V-
GND
VS1 = VS2
VO
CL
35 pF
90 %
0V
tD
tD
CL (includes fixture and stray capacitance)
- 15 V
Figure 3. Break-Before-Make (DG419B)
+5V
VL
VS1
VS2
+ 15 V
V+
S1
D
VO
Logic
Input
50 %
0V
S2
RL
300
IN
GND
tr < 5 ns
tf < 5 ns
3V
tTRANS
CL
35 pF
tTRANS
VS1
V01
V-
- 15 V
90 %
Switch
Output
VS2
V02
10 %
CL (includes fixture and stray capacitance)
VO = VS
RL
RL + rDS(on)
Figure 4. Transition Time (DG419B)
Document Number: 72107
S-71009–Rev. C, 14-May-07
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DG417B/418B/419B
Vishay Siliconix
TEST CIRCUITS
Rg
+5V
+ 15 V
VL
V+
VO
VO
D
S
VO
IN
INX
OFF
CL
10 nF
3V
ON
V-
GND
OFF
Q = VO x CL
- 15 V
Figure 5. Charge Injection
+5V
+ 15 V
C
C
VL
VL
50
VO
D
Rg = 50
S2
RL
IN
0 V, 2.4 V
IN
GND
0.8 V
GND
V+
S
VS
RL
C
D
Rg = 50
VO
+ 15 V
C
V+
S1
VS
+5V
V-
C
C
V-
- 15 V
- 15 V
XTALK Isolation = 20 log
C = RF bypass
Off Isolation = 20 log
VO
VO
VS
VS
Figure 7. Off isolation
Figure 6. Crosstalk
+5V
+ 15 V
C
C
VL
V+
S
VS
D
VO
Rg = 50
0 V, 2.4 V
RL
IN
GND
V-
C
- 15 V
Figure 8. Insertion Loss
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Document Number: 72107
S-71009–Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
TEST CIRCUITS
+5V
+ 15 V
+ 15 V
C
C
VL
V+
V+ S2
S
DG417B/418B
IN
HP4192A
Impedance
Analyzer
or Equivalent
D
GND
V-
C
f = 1 MHz
S1
DG419B
Meter
0 V, 2.4 V
NC
C
0 V, 2.4 V
Meter
IN
D2
GND
HP4192A
Impedance
Analyzer
or Equivalent
D1
V-
C
f = 1 MHz
- 15 V
- 15 V
Figure 9. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72107.
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Document Number: 72107
S-71009–Rev. C, 14-May-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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