VISHAY V12WM100C-M3I

V12WM100C-M3
www.vishay.com
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.48 V at IF = 3 A
FEATURES
• Trench MOS Schottky technology
TMBS®
• Ideal for automated placement
TO-252 (D-PAK)
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
A
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
A
V12WM100C
A
A
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
K
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2x6A
VRRM
100 V
IFSM
90 A
VF at IF = 6 A (TA = 125 °C)
0.57 V
TJ max.
150 °C
Package
TO-252 (D-PAK)
Diode variation
Dual common cathode
Case: TO-252 (D-PAK)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
SYMBOL
V12WM100C
UNIT
VRRM
100
V
12
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
IF(AV)
A
6
IFSM
90
A
TJ, TSTG
-40 to +150
°C
Revision: 04-Dec-13
Document Number: 89973
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12WM100C-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 3 A
MAX.
0.56
-
0.65
0.75
0.48
-
0.57
0.66
-
300
μA
3
15
mA
VF (1)
IF = 3 A
TA = 125 °C
IF = 6 A
VR = 100 V
Reverse current per diode
TYP.
TA = 25 °C
IF = 6 A
Instantaneous forward voltage per diode
SYMBOL
TA = 25 °C
IR (2)
TA = 125 °C
UNIT
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V12WM100C
per diode
Typical thermal resistance
UNIT
2.4
RJC
per device
1.2
RJA (1) (2)
per device
°C/W
65
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2) Free air, without heatsink
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V12WM100C-M3/I
0.38
I
2500/reel
13" diameter plastic tape and reel
14
RthJA=RthJC=1.2oC/W
12
Average Power Loss (W)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10
8
6
RthJA=65oC/W
4
2
0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
D = 0.8
D = 0.5
D = 0.3
D = 0.2
D = 1.0
D = 0.1
T
D = tp/T
0
0.4
0.8
1.2
1.6
2
2.4
tp
2.8
3.2
3.6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 04-Dec-13
Document Number: 89973
2
For technical questions within your region: DiodesAmerica[email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12WM100C-M3
www.vishay.com
Vishay General Semiconductor
10 000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
Instantaneous Forward Voltage (V)
TA = 150 °C
1
TA = 125 °C
TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
20
30
40
50
60
70
80
Fig. 5 - Typical Junction Capacitance Per Diode
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
100
0.1
90
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
10
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 04-Dec-13
Document Number: 89973
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V12WM100C-M3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-252 (D-PAK)
A
E
Mounting Pad Layout
in inches (millimeters)
0.002"
c
-A-
0.244 MIN.
(6.2)
0.05 mm
b3
L3
1.55 mm REF.
0.256
(6.5) MIN.
D
H
A1
L4
b2
0.39 (9.9)
0.488 (12.4)
b
e
See detail A
0.094 MIN.
(2.4)
c
0.051 MIN.
(1.3)
0.086 (2.19)
0.094 (2.39)
L2
D1
E1
θ
L
0.004"
0.1 mm
SYMBOL
INCHES
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
A
0.086
0.094
2.19
2.38
A1
-
0.005
-
0.13
b
0.025
0.035
0.64
0.89
b2
0.033
0.045
0.84
1.14
b3
0.205
0.215
5.21
5.46
c
0.018
0.024
0.46
0.61
D
0.235
0.250
5.97
6.22
D1
0.205
-
5.21
-
E
0.250
0.265
6.35
6.73
E1
0.190
-
4.83
-
e
0.090 BSC.
2.29 BSC.
H
0.380
0.410
9.65
10.41
L
0.055
0.070
1.40
1.78
L2
0.020 BSC.
0.51 BSC.
L3
0.035
0.050
0.89
1.27
L4
0.025
0.039
0.64
1.01

0°
8°
0°
8°
Note
• Conforms to JEDEC TO-252 variation AA except dimension “D”
Revision: 04-Dec-13
Document Number: 89973
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000