AOSMD AO3434 30v n-channel mosfet Datasheet

AO3434
30V N-Channel MOSFET
General Description
Product Summary
The AO3434 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or
in PWM applications. It is ESD protected.
VDS (V) = 30V
ID = 4.2A
RDS(ON) < 52mΩ
RDS(ON) < 75mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
ESD protected
SOT23
Top View
D
Bottom View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol 10 sec
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current A,F
Pulsed Drain Current
TA=70°C
ID
B
±20
3.5
3.3
2.8
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
A
30
PD
TA=70°C
Units
V
V
4.2
IDM
TA=25°C
Power Dissipation
Maximum
Steady-State
30
RθJA
RθJL
1.4
1.0
0.9
0.64
-55 to 150
Typ
70
100
63
Max
90
125
80
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
AO3434
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±16V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
On state drain current
VGS=10V, VDS=5V
30
TJ=55°C
VGS=10V, ID=4.2A
5
10
uA
1.8
V
43
52
58
74
75
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=2A
59
gFS
Forward Transconductance
VDS=5V, ID=4.2A
8.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.77
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
269
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=4.2A
µA
1.32
RDS(ON)
Coss
Units
V
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
Crss
Max
30
IDSS
ID(ON)
Typ
mΩ
mΩ
S
1
V
1.8
A
340
pF
65
pF
41
pF
1
1.5
Ω
5.7
7.2
nC
3
nC
1.37
nC
Qgd
Gate Drain Charge
0.65
tD(on)
Turn-On DelayTime
2.6
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Body Diode Reverse Recovery Time
Qrr
nC
3.8
ns
VGS=10V, VDS=15V, RL=3.6Ω,
RGEN=3Ω
5.5
8
ns
15.2
23
ns
3.7
5.5
ns
IF=4.2A, dI/dt=100A/µs
15.5
21
Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs
7.1
ns
nC
Turn-Off Fall Time
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤10s thermal resistance rating.
Rev3:Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
15
8V
10V
VDS=5V
12
6V
20
4.5V
15
4V
9
ID(A)
ID (A)
25
6
3.5V
10
125°C
3
5
25°C
VGS=3V
0
0
0
1
2
3
4
5
0
1
VDS (Volts)
Fig 1: On-Region Characteristics
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics
80
1.8
Normalized On-Resistance
VGS=4.5V
70
RDS(ON) (mΩ )
2
60
50
40
VGS=10V
30
VGS=10V
Id=4.2A
1.6
1.4
VGS=4.5V
Id=3.5A
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
102
1.0E+01
ID=4.2A
1.0E+00
125°C
78
1.0E-01
IS (A)
RDS(ON) (mΩ )
90
66
125°C
1.0E-02
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-03
54
COMPONENTS
IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS25°C
OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-04
42 AND RELIABILITY WITHOUT NOTICE.
FUNCTIONS
1.0E-05
30
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
www.aosmd.com
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
500
10
VDS=15V
ID=4.2A
400
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
300
200
Coss
100
0
1
2
3
4
5
6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10µs
RDS(ON)
limited
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
25
100µ
1.0
1m
10ms
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
30
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
20
15
10
5
10s
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
TJ(Max)=150°C
TA=25°C
0.1s
DC
1
VDS (Volts)
Power (W)
ID (Amps)
5
30
10.0
Zθ JA Normalized Transient
Thermal Resistance
Crss
0
0
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS
NOT ASSUME ANY LIABILITY ARISING
D
0.1 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOSPDOES
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Similar pages