APTM10HM05FG Full - Bridge MOSFET Power Module VBUS Q3 Q1 S1 OUT2 G3 OUT1 G1 S3 Q4 Q2 G2 G4 S2 0/VBUS S4 VDSS = 100V RDSon = 4.5mΩ typ @ Tj = 25°C ID = 278A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration OUT1 G2 0/VBUS S2 S3 S4 G3 G4 OUT2 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 278 207 1100 ±30 5 780 100 50 3000 Unit V A V mΩ W A July, 2006 VBUS S1 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM10HM05FG– Rev 1 G1 APTM10HM05FG All ratings @ Tj = 25°C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C VGS = 10V, ID = 125A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 4.5 2 Min VGS = 10V VBus = 50V ID = 250A Typ 20 8 2.9 700 Unit Max Unit µA mΩ V nA nF nC 360 80 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 250A R G = 2.5 Ω 165 Test Conditions ns 280 135 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 250A, R G =2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 250A, R G = 2.5Ω 1.1 mJ 1.2 1.22 mJ 1.28 Min Typ Tj = 25°C Max 278 207 1.3 5 190 Tj = 125°C 370 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 250A IS = - 250A VR = 50V diS/dt = 200A/µs Max 200 1000 5 4 ±200 120 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C 0.8 Tj = 125°C 3.4 Unit A V V/ns ns µC July, 2006 Symbol X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 278A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2-6 APTM10HM05FG– Rev 1 Electrical Characteristics APTM10HM05FG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.16 150 125 100 5 3.5 280 Unit °C/W V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM10HM05FG– Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM10HM05FG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics 240 VGS =15V, 10V & 9V 1000 ID, Drain Current (A) 800 600 8V 400 7V 6V 200 0 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 200 160 120 80 T J=25°C 40 T J=125°C 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 125A 1.1 V GS=10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 300 RDS(on) vs Drain Current ID, DC Drain Current (A) 0.8 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C 0 4-6 APTM10HM05FG– Rev 1 ID, Drain Current (A) Low Voltage Output Characteristics 1200 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 0.7 VGS=10V ID= 125A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 0.6 1000 100µs limited by RDSon 100 1ms Single pulse TJ=150°C TC=25°C 10ms 10 -50 -25 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=250A TJ=25°C 14 V DS =20V 12 VDS=50V 10 V DS =80V 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 www.microsemi.com 5-6 APTM10HM05FG– Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10HM05FG APTM10HM05FG Delay Times vs Current Rise and Fall times vs Current 250 350 250 t d(off) VDS=66V RG=2.5Ω T J=125°C L=100µH 200 150 td(on) 100 150 tf 100 0 0 0 100 200 300 ID, Drain Current (A) 400 0 100 200 300 ID, Drain Current (A) 400 Switching Energy vs Gate Resistance Switching Energy vs Current 5 VDS=66V RG=2.5Ω TJ=125°C L=100µH 2.5 2 Switching Energy (mJ) 3 Eoff 1.5 Eon 1 0.5 Eoff 0 VDS=66V ID=200A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 100 200 300 400 0 5 I D, Drain Current (A) Operating Frequency vs Drain Current ZCS Hard switching 60 ZVS VDS=66V D=50% RG=2.5Ω T J=125°C T C=75°C 40 20 0 50 100 150 15 20 25 30 200 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 80 10 Gate Resistance (Ohms) 100 Frequency (kHz) tr 50 50 Eon and Eoff (mJ) V DS =66V RG =2.5Ω T J=125°C L=100µH 200 tr and t f (ns) t d(on) and td(off) (ns) 300 250 I D, Drain Current (A) 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM10HM05FG– Rev 1 July, 2006 VSD, Source to Drain Voltage (V)