GT40G121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40G121 The 4th Generation Current Resonance Inverter Switching Applications · Enhancement-mode · High speed: tf = 0.30 µs (typ.) (IC = 60 A) · Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V Gate-emitter voltage VGES ±25 V DC IC 40 1 ms ICP 100 Collector power dissipation (Tc = 25°C) PC 100 W Junction temperature Tj 150 °C Tstg -55~150 °C Collector current Storage temperature range A JEDEC TO-220AB JEITA ― TOSHIBA Weight: 2 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics 2-10P1C Symbol Test Condition Min Typ. Max Unit IGES VGE = ±25 V, VCE = 0 ¾ ¾ ±500 nA Collector cut-off current ICES VCE = 400 V, VGE = 0 ¾ ¾ 1.0 mA VGE (OFF) IC = 60 mA, VCE = 5 V 3.0 ¾ 6.0 V VCE (sat) IC = 60 A, VGE = 15 V ¾ 1.8 2.5 V VCE = 10 V, VGE = 0, f = 1 MHz ¾ 3900 ¾ pF ¾ 0.33 ¾ ¾ 0.43 ¾ ¾ 0.30 0.40 Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Cies Rise time Switching time Turn-on time Fall time Turn-off time Thermal resistance tr 39 W ton tf 15 V 0 3.33 9 Gate leakage current 200 V toff -15 V ¾ 0.54 ¾ Rth(j-c) ¾ ¾ ¾ 1.25 1 ms °C/W 2003-03-18 GT40G121 IC – VCE VCE – VGE 10 20 9 80 Collector-emitter voltage VCE 15 (A) IC Collector current Common emitter 8 10 (V) 100 60 VGE = 7 V 40 20 Common emitter Tc = -40°C 8 6 80 4 60 30 2 Tc = 25°C 0 0 1 2 3 Collector-emitter voltage IC = 10 A 4 VCE 0 0 5 4 (V) 8 12 VCE – VGE (V) VCE – VGE Common emitter (V) (V) Tc = 25°C VCE 8 Collector-emitter voltage VCE Collector-emitter voltage 24 10 Common emitter 6 4 80 60 30 2 Tc = 125°C 8 6 80 4 60 30 2 IC = 10 A 0 0 4 8 IC = 10 A 12 16 Gate-emitter voltage VGE 20 0 0 24 4 8 12 16 20 Gate-emitter voltage VGE (V) IC – VGE 24 (V) VCE (sat) – Tc 100 4 Common emitter Common emitter Gate-emitter saturation voltage VCE (sat) (V) VCE = 5 V IC (A) 80 60 Collector current 20 Gate-emitter voltage VGE 10 40 25 20 0 16 Tc = 125°C 0 2 4 -40 6 Gate-emitter voltage VGE 8 VGE = 15 V 3 60 30 1 IC = 10 A 0 -40 10 80 2 0 40 80 Case temperature Tc (V) 2 120 160 (°C) 2003-03-18 GT40G121 VCE, VGE – QG C – VCE 10000 RL = 3.3 W Tc = 25°C 3000 12 VCE = 200 V 8 100 150 4 1000 500 300 Coes 100 50 30 Cres 0 10 0 40 80 120 Gate charge QG 160 200 1 3 100 (A) (ms) VGG = ±15 V IC = 60 A Tc = 25°C IC 1 toff Collector current ton tr 0.5 tf 0.3 10 30 50 1000 3000 (V) Safe operating area VCC = 200 V 5 300 VCE 300 Common emitter 3 3 100 (nC) Switching time – RG 0.1 30 10 Collector-emitter voltage 5 Switching time Common emitter VGE = 0 V f = 1 MHz Tc = 25°C cies (pF) 5000 C 16 Common emitter Collector current Collector-emitter voltage VCE (´25 V) Gate-emitter voltage VGE (V) 20 300 100 Gate resistance RG (9) 50 IC max (pulse) 10 ms* IC max (continuous) 100 ms* 1 ms* 30 10 DC operation 5 *Single non-repetitive 3 pulse Tc = 25°C Curves must be 1 derated linearly with increase in 0.5 temperature. 0.3 1 3 10 ms* (pulse) 10 30 Collector-emitter voltage 100 VCE 300 1000 (V) Switching time – IC 1 toff ton tr Switching time (ms) 0.5 0.3 tf 0.1 0.05 Common emitter VCC = 200 V VGG = ±15 V RG = 39 W Tc = 25°C 0.03 0.01 0 10 20 30 40 Collector current 50 IC 60 70 (A) 3 2003-03-18 GT40G121 Reverse bias safe operating area Transient thermal impedance rth (t) (°C/W) 300 Collector current IC (A) 100 50 30 10 5 Tj < = 125°C 3 10 Tc = 25°C 10 10 10 10 VGE = ±15 V RG = 39 W 1 1 3 10 30 Collector-emitter voltage 100 VCE 300 10 1000 1 0 -1 -2 -3 10 (V) rth (t) – tw 2 -5 10 -4 10 -3 10 -2 10 -1 Pulse Width tw 4 10 0 10 1 10 2 (s) 2003-03-18 GT40G121 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2003-03-18