Infineon BTS3410G Smart low side power switch Datasheet

Smart Low Side Power Switch
HITFET BTS 3410G
Features
Product Summary
· Logic Level Input
Drain source voltage
VDS
· Input Protection (ESD)
On-state resistance
RDS(on)
200
mW
· Thermal shutdown with auto restart
Nominal load current
ID(Nom)
1.3
A
• Green product (RoHS compliant)
Clamping energy
EAS
150
mJ
42
V
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
Vbb
M
HITFET â
In1
Pin 2
Drain1
Pin 7and 8
Logic
Channel 1
Pin 1
Source1
Drain2
Pin 5and 6
In2
Pin 4
Logic
Channel 2
Pin 3
Source2
Complete product spectrum and additional information http://www.infineon.com/hitfet
Datasheet
1
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Pin Description
Pin Configuration (Top view)
Pin
Symbol
Function
1
S1
Source Channel 1
2
IN1
Input Channel 1
3
S2
4
S1
1·
8
D1
Source Channel 2
IN1
2
7
D1
IN2
Input Channel 2
S2
3
6
D2
5
D2
Drain Channel 2
IN2
4
5
D2
6
D2
Drain Channel 2
7
D1
Drain Channel 1
8
D1
Drain Channel 1
HITFET
Drain1
â
Current
Limitation
In1
PG- DSO-8-25
OvervoltageProtection
Pin 7, 8
Vbb
Gate-Driving Unit
Pin 2
M
ESD
Overload
Protection
Over- temperature
Protection
Short circuit Protection
Pin 1
Source1
Drain2
Current
Limitation
In2
OvervoltageProtection
Pin 5, 6
Vbb
Gate-Driving Unit
Pin 4
M
ESD
Overload
Protection
Over- temperature
Protection
Short circuit Protection
Pin 3
Source2
Datasheet
2
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Value
Drain source voltage
VDS
42
Drain source voltage for short circuit protection 1)
VDS(SC)
18
Unit
V
Tj = -40...150 °C
IIN
Continuous input current1)
mA
-0.2V £ VIN £ 10V
no limit
VIN < -0.2V or VIN > 10V
| IIN | £ 2
Operating temperature
Tj
-40 ...+150
Storage temperature
Tstg
-55 ... +150
Power dissipation2)5)
Ptot
0.8
W
EAS
150
mJ
VLD
50
V
2
kV
°C
TA = 85 °C
Unclamped single pulse inductive energy1)
each channel
Load dump protection VLoadDump1)3) = VA + VS
VIN = 0 and 10 V, t d = 400 ms, RI = 2 W,
RL = 9 W, VA = 13.5 V
Electrostatic discharge voltage1)
(Human Body Model)
VESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
Thermal resistance
junction - ambient:
R thJA
per channel
@ 6 cm 2 cooling area2)
K/W
one channel on
100
both channels on
160
1not subject to production test, specified by design
2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
3V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5 not subject to production test, calculated by R
THJA and Rds(on)
Datasheet
3
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
42
-
55
V
-
1.5
10
µA
Characteristics
VDS(AZ)
Drain source clamp voltage
Tj = - 40 ...+ 150, ID = 10 mA
Off-state drain current Tj = -40 ... +150°C
IDSS
VDS = 32 V, VIN = 0 V
VIN(th)
Input threshold voltage
V
ID = 0.3 mA, Tj = 25 °C
1.3
1.7
2.2
ID = 0.3 mA, Tj = 150 °C
0.8
-
-
-
10
30
On state input current
IIN(on)
On-state resistance
R DS(on)
VIN = 5 V, ID = 1.4 A, Tj = 25 °C
VIN = 5 V, ID = 1.4 A, Tj = 150 °C
µA
mW
-
190
240
-
350
480
-
150
200
-
280
400
R DS(on)
On-state resistance
VIN = 10 V, I D = 1.4 A, T j = 25 °C
VIN = 10 V, I D = 1.4 A, T j = 150 °C
ID(Nom)
Nominal load current per channel5)
A
VDS = 0.5 V, Tj < 150°C, VIN = 10 V, T A = 85 °C,
one channel on
both channels on
Current limit (active if VDS>2.5 V)2)
ID(lim)
1.3
1.65
-
1
1.3
-
5
7.5
10
VIN = 10 V, VDS = 12 V, t m = 200 µs
1not subject to production test, specified by design
2Device switched on into existing short circuit (see diagram Determination of I
D(lim) ). If the device is in on cond
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5 not subject to production test, calculated by R
THJA and Rds(on)
Datasheet
4
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Electrical Characteristics
Symbol
Parameter
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
ton
-
45
100
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID:
toff
-
60
100
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
-dVDS/dt on
-
0.4
1.5
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
dVDS/dtoff
-
0.6
1.5
150
175
-
°C
-
10
-
K
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
µs
V/µs
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions1)
Thermal overload trip temperature
Tjt
Thermal hysteresis2)
DT jt
Input current protection mode
IIN(Prot)
25
50
300
Input current protection mode
IIN(Prot)
-
40
300
EAS
150
-
-
mJ
VSD
-
1
-
V
µA
Tj = 150 °C
Unclamped single pulse inductive energy2)
each channel
ID = 0.9 A, Tj = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
IF = 7 A, tm = 250 µs, VIN = 0 V,
tP = 300 µs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
Datasheet
5
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Block diagram
Inductive and overvoltage
output clamp
Terms
RL
V
I IN
D
Z
D
IN
ID
VDS
Vbb
HITFET
S
S
VIN
HITFET
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Input
VIN
Source/
Ground
IIN
IDS
Tj
Datasheet
6
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
1 Overall maximum allowable power
2 On-state resistance
dissipation; P tot = f(TS) resp.
P tot = f(TA) @ R thJA=80 K/W
R ON = f(Tj ); ID=1.4A; V IN=10V
3
500
mW
W
max.
RDS(on)
400
T
S
Ptot
2
T
350
300
typ.
A
1.5
250
200
1
150
100
0.5
50
0
-50
-25
0
25
50
75
100
°C
Tj
0
-50
150
-25
0
25
50
75
100 125 °C
Tj
3 On-state resistance
4 Typ. input threshold voltage
R ON = f(T j); ID= 1.4A; V IN=5V
VIN(th) = f(Tj); ID = 0.15 mA; VDS = 12V
500
2
max.
mW
V
400
1.6
VGS(th)
RDS(on)
175
typ.
350
300
1.4
1.2
250
1
200
0.8
150
0.6
100
0.4
50
0.2
0
-50
-25
0
25
50
75
100 125 °C
0
-50
175
Tj
Datasheet
-25
0
25
50
75
100
°C
150
Tj
7
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
5 Typ. transfer characteristics
6 Typ. short circuit current
I D=f(V IN); VDS=12V; T Jstart=25°C
ID(lim) = f(Tj); VDS=12V
Parameter: V IN
10
8
A
A
8
7
ID(lim)
ID
6
5
6
Vin=10V
5
4
5V
4
3
3
2
2
1
0
0
1
1
2
3
4
5
6
7
8
V
0
-50
10
-25
0
25
50
75
100 125 °C
VIN
7 Typ. output characteristics
8 Typ. off-state drain current
I D=f(V DS); T Jstart=25°C
Parameter: V IN
IDSS = f(T j)
10
Vin=10V
A
175
Tj
11
µA
7V
max.
9
8
6V
8
5V
6
IDSS
ID
7
4V
7
6
5
5
4
4
3
3
3V
2
2
1
0
0
1
1
2
3
4
V
0
-50
6
VDS
Datasheet
typ.
-25
0
25
50
75
100 125 °C
175
Tj
8
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
9 Typ. overload current
10 Typ. transient thermal impedance
ID(lim) = f(t), Vbb=12 V, no heatsink
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: Tjstart
Parameter: D=tp/T ; one channel on
10 2
12
K/W
A
-40°C
25°C
ZthJA
ID(lim)
10 1
8
85°C
10 0
6
150°C
4
10 -1
2
0
0
0.5
1
1.5
2
2.5
3
ms
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0
10 -2 -6
-5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10 10
4
s
10
4
tP
t
11 Determination of ID(lim)
12 Typ. transient thermal impedance
ID(lim) = f(t); t m = 200µs
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: TJstart
Parameter: D=tp/T ; both channels on
10 3
12
K/W
A
-40°C
ZthJA
ID(lim)
10 2
8
25°C
10 1
85°C
6
10 0
4
150°C
10 -1
2
0
0
0.1
0.2
0.3
0.4
ms
10 -2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
0.55
s
10
4
tP
t
Datasheet
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D=0
9
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Package Outlines
1
Package Outlines
0.1
2)
0.41+0.1
-0.06
0.2
8
5
1
4
5 -0.2
1)
M
0.19 +0.06
4 -0.2
C
B
8 MAX.
1.27
1.75 MAX.
0.175 ±0.07
(1.45)
0.35 x 45˚
1)
0.64 ±0.25
6 ±0.2
A B 8x
0.2
M
C 8x
A
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area
GPS01181
Figure 1
PG-DSO8-25 (Plastic Green Dual Small Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Datasheet
10
Dimensions in mm
Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Revision History
2
Revision History
Version
Rev. 1.3
Date
Changes
2007-11-06
updated package drawing of green package
Rev. 1.2
2007-06-18
released automotive green version
Package parameter (humidity and climatic) removed in Maximum ratings
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green package naming
Green explanation added
Rev. 1.1
2004-03-05
released production version
Datasheet
11
Rev. 1.3, 2007-11-06
Edition 2007-11-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
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characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
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