2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Unit: mm · High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) · Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) · High-speed switching: tf = 45 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEX 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V DC IC 1.5 Pulse ICP 2.5 IB 150 PC 2.0 (Note 1) 1.0 Tj Tstg Collector current Base current Collector power dissipation t = 10 s DC Junction temperature Storage temperature range A mA JEDEC ― W JEITA SC-62 150 °C TOSHIBA 2-5K1A -55 to 150 °C Weight: 0.05 g (typ.) Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 40 V, IE = 0 ¾ ¾ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ¾ ¾ 100 nA V (BR) CEO IC = 10 mA, IB = 0 20 ¾ ¾ V hFE (1) VCE = 2 V, IC = 0.15 A 400 ¾ 1000 hFE (2) VCE = 2 V, IC = 0.5 A 200 ¾ ¾ Collector-emitter saturation voltage VCE (sat) IC = 0.5 A, IB = 10 mA ¾ ¾ 0.12 V Base-emitter saturation voltage VBE (sat) IC = 0.5 A, IB = 10 mA ¾ ¾ 1.10 V Cob VCB = 10 V, IE = 0, f = 1 MHz ¾ 18 ¾ pF Rise time tr See Figure 1 circuit diagram. ¾ 43 ¾ Storage time tstg VCC ~ - 12 V, RL = 24 W ¾ 295 ¾ Fall time tf IB1 = -IB2 = 17 mA ¾ 45 ¾ Collector-emitter breakdown voltage DC current gain Collector output capacitance Switching time 1 ns 2001-12-17 2SC5819 Marking VCC 20 ms Input IB2 IB1 3D RL IB1 Output IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart 2 2001-12-17 2SC5819 IC – VCE hFE – IC 10000 1.5 20 15 10 8 hFE 4 1 DC current gain Collector current IC (A) 6 IB = 2 mA 0.5 0.2 0.4 0.6 Collector-emitter voltage VCE Ta = 100°C 1000 25 100 10 0.001 Common emitter Ta = 25°C Single nonrepetitive pulse 0 0 Common emitter VCE = 2 V Single nonrepetitive pulse 0.01 0.1 Collector current Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Ta = 100°C -55 25 0.01 0.1 1 Collector current IC (A) VBE (sat) – IC 10 0.1 0.01 IC 10 (V) Common emitter IC/IB = 50 Single nonrepetitive pulse 0.001 0.001 1 0.8 VCE (sat) – IC 1 -55 Common emitter IC/IB = 50 Single nonrepetitive pulse Ta = 100°C 0.1 0.001 10 (A) -55 25 1 0.01 0.1 Collector current 1 IC 10 (A) IC – VBE Collector current IC (A) 1.5 Common emitter VCE = 2 V Single nonrepetitive 1.2 pulse 0.9 0.6 Ta = 100°C -55 0.3 25 0 0 0.3 0.6 0.9 Base-emitter voltage VBE 1.2 1.5 (V) 3 2001-12-17 2SC5819 rth – tw Transient thermal resistance rth (°C/W) 1000 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 10 IC max (pulsed) ¨ (A) 100 ms¨ 1 10 s¨* DC operation * (Ta = 25°C) ¨: Single nonrepetitive pulse Ta = 25°C 0.1 Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 VCEO max IC Collector current 10 ms¨ 1 ms¨ IC max (continuous) 100 ms¨* 10 Collector-emitter voltage VCE 100 (V) 4 2001-12-17 2SC5819 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-12-17 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.