Diotec BCX70G Surface mount si-epitaxial planartransistor Datasheet

BCX 70
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung
1.3 ±0.1
2.5 max
3
Type
Code
2
1
250 mW
Plastic case
Kunststoffgehäuse
1.1
2.9 ±0.1
0.4
1.9
Dimensions / Maße in mm
1=B
2=E
3=C
NPN
SOT-23
(TO-236)
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BCX 70
Collector-Emitter-voltage
B open
VCE0
45 V
Collector-Base-voltage
E open
VCB0
45 V
Emitter-Base-voltage
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
250 mW 1)
Collector current – Kollektorstrom (DC)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 45 V
ICB0
–
–
20 nA
IE = 0, VCB = 45 V, Tj = 150/C
ICB0
–
–
20 :A
IEB0
–
–
20 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 4 V
2
Collector saturation volt. – Kollektor-Sättigungsspg. )
1
IC = 10 mA, IB = 0.25 mA
VCEsat
50 mV
–
350 mV
IC = 50 mA, IB = 1.25 mA
VCEsat
100 mV
–
550 mV
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
56
01.11.2003
General Purpose Transistors
BCX 70
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.25 mA
VBEsat
600 mV
–
850 mV
IC = 50 mA, IB = 1.25 mA
VBEsat
700 mV
–
1050 mV
1
DC current gain – Kollektor-Basis-Stromverhältnis )
VCE = 5 V, IC = 10 :A
VCE = 5 V, IC = 2 mA
VCE = 1 V, IC = 50 mA
BCX 70G
hFE
–
–
–
BCX 70H
hFE
30
–
–
BCX 70J
hFE
40
–
–
BCX 70K
hFE
100
–
–
BCX 70G
hFE
120
–
220
BCX 70H
hFE
180
–
310
BCX 70J
hFE
250
–
460
BCX 70K
hFE
380
–
630
BCX 70G
hFE
50
–
–
BCX 70H
hFE
70
–
–
BCX 70J
hFE
90
–
–
hFE
100
–
–
BCX 70K
1
Base-Emitter voltage – Basis-Emitter-Spannung )
VCE = 5 V, IC = 10 :A
VBEon
–
520 mV
–
VCE = 5 V, IC = 2 mA
VBEon
550 mV
650 mV
700 mV
VCE = 1 V, IC = 50 mA
VBEon
–
780 mV
–
100 MHz
250 MHz
–
–
1.7 pF
–
CEB0
–
11 pF
–
F
–
2 dB
6 dB
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking
Stempelung
BCX 70G = AG
BCX 70H = AH
420 K/W 2)
RthA
BCX 71 series
BCX 70J = AJ
BCX 70K = AD
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
57
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