TB6561NG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561NG Dual Full-Bridge Driver IC The TB6561NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current control circuitry, the driver achieves high efficiency. Features • Power supply voltage: 40 V (max) • Output current: 1.5 A (max) • Low ON-resistance: 1.5 Ω (upper and lower transistors/typ.) • Direct PWM current control system • Power-saving function • Forward/reverse/short brake/stop modes • Over-current protection: Ilim = 2.5A (typ.) • Thermal shutdown • Package: SDIP-24-Ｐ-300-1.78 Weight: 1.62 g (typ.) The TB6561NG is a Pb-free product. The following conditions apply to solderability: *Solderability 1. Use of Sn-37Pb solder bath *solder bath temperature = 230ºC *dipping time = 5 seconds *number of times = once *use of R-type flux 2. Use of Sn-3.0Ag-0.5Cu solder bath *solder bath temperature = 245ºC *dipping time = 5 seconds *number of times = once *use of R-type flux 1 2006-3-6 TB6561NG Block Diagram S-GND Vreg SB VCC OUT2A Vcc 24 2 3 23 11 7 OUT1A OUT2B 8 14 Vcc OUT1B S-GND 18 17 13 5V Over-current detection circuit Control logic 1 S-GND 5 6 4 IN1A IN2A PWMA 20 19 21 IN1B IN2B PWMB 22 10 CLD P-GNDA 15 12 P-GNDB S-GND N.C.: 9pin, 16pin 2 2006-3-6 TB6561NG Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power supply voltage VCC 40 V Output voltage VO Output current IO (Peak) 40 (Note 1) 1.5 V A Power dissipation PD Operating temperature Topr −20 to 85 2.5 (Note 2) °C W Storage temperature Tstg −55 to 150 °C Note 1: Please use output voltage within the above absolute maximum rating, 40 V, in which includes back-EMF voltage. Note 2: When mounted on a board (50 mm × 50 mm × 1.6 mm, Cu area: 50%) Operating Range (Ta = 25°C) Characteristics Power supply voltage Symbol Rating Unit VCC, VM 10 to 36 V Pin Description Pin No. Symbol Function Description Remarks 1 S-GND Signal ground ⎯ 2 Vreg 5-V output pin Connect a capacitor (0.1μF) between this pin and S-GND pin. 3 SB Standby pin High: Start, Low: Standby 4 PWMＡ Rotation direction control pin (chA) Apply a 0-V/5-V signal. 5 IN1A Input pin 1 (chA) Apply a 0-V/5-V signal. 6 IN1Ｂ Input pin 2 (chA) Apply a 0-V/5-V signal. Power supply voltage input pin for motor drive (chA) VMA (opr) = 10 V to 36 V Output pin 1 (chA) Connect to a motor coil pin. 7 Vcc 8 OUT1A 9 N.C. 10 P-GND Power ground for chA output 11 OUT2 A Output pin 2 (chA) 12 S-GND Signal ground ⎯ 13 S-GND Signal ground ⎯ 14 OUT2B Output pin 2 (chB) 15 P-GND Power ground 16 N.C. 17 OUT1Ｂ 18 ⎯ ⎯ ⎯ Connect to a motor coil pin. Connect to a motor coil pin. ⎯ ⎯ ⎯ Output pin 1 (chB) Connect to a motor coil pin. Vcc Power supply voltage input pin for motor drive (chB) VMB (opr) = 10 V to 36 V 19 IN2B Input pin used to set output current level (chB) Input 0-V/5-V signal. 20 IN1B Input pin used to set output current level (chB) Input 0-V/5-V signal. 21 PWM B Rotation direction control pin (chB) Input 0-V/5-V signal. 22 CLD Output signal pin of current limiter detection 23 VCC Power supply voltage input pin 24 S-GND ⎯ VCC (opr) = 10 V to 36 V ⎯ Signal ground 3 2006-3-6 TB6561NG Electrical Characteristics (VCC = VMA = VMB = 24 V, Ta = 25°C) Characteristics Symbol Test Circuit ICC1 ICC2 Supply current ICC3 ⎯ Input voltage Control circuit Hysteresis voltage Input current VINL VIN (HYS) IINH VPWMH Typ. Max Stop mode ⎯ 5.5 10 Forward/reverse mode ⎯ 5.0 9 Short break mode ⎯ 5.5 10 ⎯ ⎯ PWM input circuit Input current VPWM (HYS) ⎯ 1.5 3 ⎯ 5.5 ⎯ -0.2 ⎯ 0.8 (Design guarantee) ⎯ 0.4 ⎯ VIN = 5 V 30 50 75 VIN = 0 V ⎯ ⎯ 5 ⎯ 2.3 ⎯ 5.5 ⎯ -0.2 ⎯ 0.8 (Design guarantee) ⎯ 0.4 ⎯ VPWM = 5 V 30 50 75 VPWM = 0 V ⎯ ⎯ 5 Duty: 50 % ⎯ ⎯ 100 kHz ⎯ 2.0 ⎯ ⎯ µs ⎯ 2.3 ⎯ 5.5 ⎯ -0.2 ⎯ 0.8 0.4 ⎯ ⎯ IPWMH ⎯ ⎯ IPWML PWM frequency Minimum clock pulse width Input voltage fPWM ⎯ tw(PWM) VINSH ⎯ VINSL Standby circuit Hysteresis voltage Input current VIN (HYS) IINSH ⎯ ⎯ IINSL Output ON resistance Output leakage current Diode forward voltage Internal reference voltage Output signal of current limiter detection Offset time for current limiter Thermal shutdown circuit operating temperature Ron (U + L) IL (U) IL (L) VF (U) VF (L) ⎯ ⎯ ⎯ mA 2.3 VPWML Hysteresis voltage Unit ⎯ ⎯ IINL Input voltage Min Standby mode ICC4 VINH Test Condition (Design guarantee) VIN = 5 V 30 50 75 VIN = 0 V ⎯ ⎯ 5 Io = 0.2 A ⎯ 1.5 2.0 Io = 1.5 A ⎯ 1.5 2.0 VCC = 40 V ⎯ ⎯ 10 VCC = 40 V ⎯ ⎯ 10 Io = 1.5 A ⎯ 1.3 2.0 Io = 1.5 A ⎯ 1.3 2.0 Ireg = 1mA 4.75 5 5.25 Io = 50μA 4.25 ⎯ Vreg ⎯ 0.5 V µA V µA V µA Ω µA V Vreg ⎯ VCLDH ⎯ VCLDL ⎯ ISD (OFF) ⎯ (Design guarantee) ⎯ 50 ⎯ µs TSD ⎯ (Design guarantee) ⎯ 160 ⎯ °C 4 V V 2006-3-6 TB6561NG Component Desctiption 1. Control Input/PWM Input Circuit Vreg IN, PWM 100 kΩ • The input signals are shown below. Input at the CMOS and TTL levels can be provided. Note that the input signals have a hysteresis of 0.2 V (typ.). VINH/VPWMH: 2 to 5.5 V VINL/VPWML: GND to 0.8 V • The PWM input frequency should be 100 kHz or less. Input/Output Function Input Output IN1 IN2 SB H H H L H H H L H L L H H/L H/L L • PWM OUT1 OUT2 Mode L L Short brake H L H CW/CCW L L L Short brake H H L CCW/CW L L L Short brake H L H L H L OFF (high-impedance) Stop OFF (high-impedance) Standby PWM control function The IC enters CW (CCW) mode and short brake mode alternately in PWM current control. To prevent shoot-through current caused by simultaneous conduction of upper and lower transistors in the output stage, a dead time is internally generated for 300 ns (target spec) when switching the upper and lower transistors. Therefore, synchronous rectification for high efficiency in PWM current control can be achieved without an off-time that is generated via an external input. Even when toggling between CW and CCW modes, and CW (CCW) and short brake modes, the off-time is not required due to the internally generated dead time. 5 2006-3-6 TB6561NG VM OUT1 VM M OUT1 VM M OUT1 M P-GND P-GND P-GND PWM ON → OFF t2 = 500ns (typ.) PWM ON t1 PWM OFF t3 VM VM OUT1 OUT1 M M P-GND P-GND PWM OFF → ON t4 = 500 ns (typ.) PWM ON t5 VM t1 t5 Output voltage waveform (OUT1) t3 P-GND t2 t4 2. Thermal Shutdown Circuit (TSD) The IC incorporates a thermal shutdown circuit. When the junction temperature (Tj) reaches 160°C (typ.), the output transistors are turned off. After 50 µs (typ.), the output transistors are turned on automatically. The IC has 20°C of temperature hysteresis. TSD = 160°C (target spec) ∆TSD = 20°C (target spec) 6 2006-3-6 TB6561NG 3. Overcurrent Protection Circuit (ISD) The IC incorporates an overcurrent protection circuit to detect voltage that flows through the output transistors. The overcurrent threshold is 2.5 A (typ.). Currents that flow through the output transistors are monitored individually. If overcurrent is detected in at least one of the transistors, all transistors are turned off. The IC incorporates a timer to count 50 µs (typ.) for which the transistors are off. After 50 µs, they are turned on automatically. If an overcurrent occurs again, the same operation is repeated. To prevent false detection due to glitch, the circuit turns off the transistors only when current that exceeds the overcurrent threshold flows for 10 µs or longer. ILIM Output current 0 50 µs (typ.) 10 µs (typ.) 50 µs (typ.) 10 µs (typ.) Not detected The over-current threshold is a target spec. It varies in a range from approximately 1.5 A to 3.5 A. 7 2006-3-6 TB6561NG 4. Current Limiter Detection Circuit (CLD) Vreg CLD The CLD pin outputs the states of the current limiter and thermal shutdown circuits. If the current limiter for either channel A or B or the thermal shutdown circuit (shared for both channels) operates, the CLD pin state changes from low (normal state) to high. The CLD circuit supports automatic recovery; its output returns to low once the current decreases to a value below the limit or once the thermal shutdown state is released. Mode CLD Output Under TSD operation and current detection H Normal L ＜When current limiter operated＞ ILIM Output current 0 OFF time OFF time 50 µs (typ.) 50 µs (typ.) 10 µs (typ.) Not detected 10 µs (typ.) Ｈ CLD output Ｌ ＜When TSD circuit operated＞ 160℃(typ.) Chip temperature 120℃(typ.) TSD Ｈ CLD output Ｌ Current noise and other factors may cause false pulse output. To avoid this, Toshiba recommends a user to insert a filter or to carry out detection using a sampling monitor. When inserting a filter, please set the filter time-constant, considering the 50-µs CLD output. 8 2006-3-6 TB6561NG PD – Ta 4 ① PD MAX (W) ② Single unit Rth(j-a) = 90°C/W At substrate installation 50×50×1.6 mm Copper foil area 70% 3 POWER DISSIPATION ② 2 ① 1 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta 150 (°C) OUTPUT LOWER SIDE Iout – VCE(sat) <Reference data> 2.0 <Reference data> VCE(sat) (V) 2.0 1.5 SATURATION VOLTAGE SATURATION VOLTAGE VCE(sat) (V) OUTPUT UPPER SIDE Iout – VCE(sat) 125 1.0 0.5 0 0 0.25 0.50 0.75 1.00 OUTPUT CURRENT Iout 1.25 1.50 (A) 1.5 1.0 0.5 0 0 0.25 0.50 0.75 1.00 OUTPUT CURRENT Iout 9 1.25 1.50 (A) 2006-3-6 TB6561NG Application Circuit (Note 1) C1 C2 (Note 4) 2 Vreg VDD 23 VCC 7 Vcc 24 V (Note 2) 5V 18 Vcc PORT1 3 SB OUT1A 8 PORT2 4 PWMA OUT2A 11 PORT3 5 IN1A PORT4 6 IN2A PORT5 21 PWMB PORT6 20 IN1B PORT7 19 IN2B Motor P-GNDA 10 (Note 3) TB6561NG OUT1B 17 Motor OUT2BA 14 P-GNDB 15 GND CLD S-GND 22 1, 12, 13, 24 (Note 3) Microcontroller Note 1: A power supply capacitor should be connected between VCC and P-GND as close as possible to the IC. Note 2: C2 should be connected as close as possible to S-GND. Note 3: Avoid connecting the resistor to detect the motor current. If necessary, connect the resistor to VM line. Note 4: VCC (7 pin, 18 pin, 23 pin) should be shorted externally. Note 5: When the power is turned on, set SB for low (standby mode) or IN1 and IN2 for low (stop mode). Caution for using ・Utmost care is necessary in the design of the output, VCC, VM, and GND lines since the IC may be destroyed by short-circuiting between outputs, air contamination faults, or faults due to improper grounding, or by short-circuiting between contiguous pins. ・The IC may be destroyed when mounted in the wrong orientation. Thus, please mount it with great care. 10 2006-3-6 TB6561NG Package Dimensions Weight: 1.62 g (typ.) 11 2006-3-6 TB6561NG Notes on Contents 1. Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. 2. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 3. Timing Charts Timing charts may be simplified for explanatory purposes. 4. Application Circuits The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits. 5. Test Circuits Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment. IC Usage Considerations Notes on handling of ICs [1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. [2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. [3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. [4] Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time. 12 2006-3-6 TB6561NG Points to remember on handling of ICs (1) Over current Protection Circuit Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all circumstances. If the Over current protection circuits operate against the over current, clear the over current status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the over current protection circuit to not operate properly or IC breakdown before operation. In addition, depending on the method of use and usage conditions, if over current continues to flow for a long time after operation, the IC may generate heat resulting in breakdown. (2) Thermal Shutdown Circuit Thermal shutdown circuits do not necessarily protect ICs under all circumstances. If the thermal shutdown circuits operate against the over temperature, clear the heat generation status immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum ratings can cause the thermal shutdown circuit to not operate properly or IC breakdown before operation. (3) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (TJ) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (4) Back-EMF When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. 13 2006-3-6 TB6561NG 14 2006-3-6