Intersil ACS147MS Radiation hardened 10-to-4 line priority encoder Datasheet

ACS147MS
Data Sheet
Radiation Hardened 10-to-4 Line Priority
Encoder
These nine-input priority encoders accept data from nine
active LOW inputs and provide a binary representation on
the four active LOW outputs. A priority is assigned to each
input so that when two or more inputs are simultaneously
active, the input with the highest priority is represented on
the output. Input line I9 has the highest priority.
These devices provide the 10-to-4-line priority encoding
function by use of the implied decimal “zero”. The “zero” is
encoded when all nine data inputs are HIGH, forcing all four
outputs HIGH.
The ACS147MS is fabricated on a CMOS Silicon on
Sapphire (SOS) process, which provides an immunity to
Single Event Latch-up and the capability of highly reliable
performance in any radiation environment.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
July 1999
File Number
4761
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under Any Conditions
- Total Dose (Max.) . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si)
- SEU Immunity . . . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . . >100MeV/(mg/cm2)
• Input Logic Levels. . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC)
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . ±12mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . . . . 20µA (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . . 17ns (Max)
Applications
• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs
Detailed Electrical Specifications for the ACS147MS are
contained in SMD 5962-98633. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/spaceselect.htm
Ordering Information
INTERNAL MARKETING
NUMBER
ORDERING NUMBER
5962F9863301VCC
ACS147DMSR-03
ACS147D/SAMPLE-03
ACS147D/SAMPLE-03
5962F9863301VXC
ACS147KMSR-03
ACS147K/SAMPLE-03
5962F9863301V9A
TEMP. RANGE (oC)
PACKAGE
DESIGNATOR
-55 to 125
16 Ld SBDIP
CDIP2-T16
25
16 Ld SBDIP
CDIP2-T16
-55 to 125
16 Ld Flatpack
CDFP4-F16
ACS147K/SAMPLE-03
25
16 Ld Flatpack
CDFP4-F16
ACS147HMSR-03
25
Die
NA
Pinouts
ACS147MS
(SBDIP)
TOP VIEW
ACS147MS
(FLATPACK)
TOP VIEW
I4 1
16 VCC
I4
1
16
VCC
I5 2
15 NC
I5
2
15
NC
I6 3
14 Y3
I6
3
14
Y3
I7 4
13 I3
I7
4
13
I3
12 I2
I8
5
12
I2
Y2
6
11
I1
Y1
7
10
I9
GND
8
9
Y0
I8 5
11 I1
Y2 6
10 I9
Y1 7
9 Y0
GND 8
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
ACS147MS
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
Size: 2390µm x 2390µm (94 mils x 94 mils)
Thickness: 525µm ±25µm (20.6 mils ±1 mil)
Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm ±0.15µm
SPECIAL INSTRUCTIONS
METALLIZATION: AI
Bond VCC First
Metal 1 Thickness: 0.7µm ±0.1µm
Metal 2 Thickness: 1.0µm ±0.1µm
ADDITIONAL INFORMATION:
Worst Case Current Density: <2.0 x 105 A/cm2
Transistor Count: 233
SUBSTRATE POTENTIAL
Unbiased Insulator
Metallization Mask Layout
ACS147MS
I5
(2)
I4
(1)
VCC
(16)
NC
(14) Y3
I6 (3)
(13) I3
I7 (4)
(12) I2
I8 (5)
(11) I1
Y2 (6)
(7)
Y1
(8)
GND
(9)
Y0
(10)
I9
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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