GT15Q311 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q311 High Power Switching Applications Motor Control Applications · The 3rd generation · Enhancement-mode · High speed: tf = 0.32 µs (max) · Low saturation voltage: VCE (sat) = 2.7 V (max) · FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 1200 V Gate-emitter voltage VGES ±20 V DC IC 15 1 ms ICP 30 IF 15 IFM 30 PC 160 W Tj 150 °C Tstg −55 to 150 °C Collector current DC Emitter-collector forward current 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range A A JEDEC ― JEITA ― TOSHIBA 2-16H1A Weight: 3.65 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2002-10-29 GT15Q311 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ― ― ±500 nA Collector cut-off current ICES VCE = 1200 V, VGE = 0 ― ― 1.0 mA VGE (OFF) IC = 1.5 mA, VCE = 5 V 4.0 ― 7.0 V Gate-emitter cut-off voltage Collector-emitter saturation voltage VCE (sat) Input capacitance Cies Rise time IC = 15 A, VGE = 15 V ― 2.1 2.7 V VCE = 50 V, VGE = 0, f = 1 MHz ― 950 ― pF ― 0.05 ― ― 0.12 ― ― 0.16 0.40 ― 0.56 ― tr Turn-on time ton Inductive load µs VCC = 600 V, IC = 15 A Switching time Fall time tf Turn-off time VGG = ±15 V, RG = 56 Ω (Note) toff Peak forward voltage VF IF = 15 A, VGE = 0 ― ― 3.0 V Reverse recovery time trr IF = 15 A, di/dt = −200 A/µs ― ― 350 ns Thermal resistance (IGBT) Rth (j-c) ― ― ― 0.78 °C/W Thermal resistance (diode) Rth (j-c) ― ― ― 1.60 °C/W Note: Switching time measurement circuit and input/output waveforms VGE RG 90% 10% 0 −VGE IC RG L IC VCC 90% VCE 0 VCE 10% 10% td (off) 90% 10% td (on) 10% tr tf toff 2 ton 2002-10-29 GT15Q311 IC – VCE VCE – VGE 20 50 Common emitter (V) Common emitter 20 30 15 10 20 VGE = 9 V 10 0 0 Tc = −40°C VCE 40 Collector-emitter voltage Collector current IC (A) Tc = 25°C 1 2 3 Collector-emitter voltage 4 VCE 16 12 30 8 15 4 0 0 5 (V) IC = 6 A 4 8 VCE – VGE (V) VCE – VGE Common emitter (V) (V) 20 20 Common emitter Tc = 25°C Tc = 125°C VCE 16 Collector-emitter voltage VCE 16 Gate-emitter voltage VGE 20 12 8 30 4 IC = 6 A 15 16 12 8 30 15 4 IC = 6 A ) Collector-emitter voltage 12 0 0 4 8 12 Gate-emitter voltage VGE 16 0 0 20 (V) 4 8 IC – VGE Common emitter Collector-emitter saturation voltage VCE (sat) (V) (A) (V) VCE (sat) – Tc VCE = 5 V IC 20 4 Common emitter Collector current 16 Gate-emitter voltage VGE 50 40 30 20 25 10 Tc = 125°C 0 0 12 4 8 −40 12 Gate-emitter voltage VGE 16 3 15 2 (V) IC = 6 A 1 0 −60 20 30 VGE = 15 V −20 20 60 Case temperature Tc 3 100 140 (°C) 2002-10-29 GT15Q311 Switching Time ton, tr – RG (µs) ton Switching time tr 0.1 0.05 0.03 0.01 3 5 10 30 50 100 Gate resistance RG 0.3 ton 0.1 tr 0.03 0.01 0 300 500 (Ω) 15 IC 20 (A) (µs) toff 1 Common emitter VCC = 600 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C toff, tf (µs) toff, tf 0.5 0.3 Switching time Switching time 1 10 Switching Time toff, tf – IC 3 Common emitter VCC = 600 V VGG = ±15 V IC = 15 A : Tc = 25°C : Tc = 125°C 5 Collector current Switching Time toff, tf – RG 3 Common emitter VCC = 600 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C ton, tr 0.3 Common emitter VCC = 600 V VGG = ±15 V IC = 15 A : Tc = 25°C : Tc = 125°C ton, tr (µs) 0.5 Switching Time ton, tr – IC 1 Switching time 1 tf 0.1 toff 0.3 tf 0.1 0.05 0.03 3 5 10 30 50 100 Gate resistance RG 0.05 0 300 500 (Ω) Eon, Eoff (mJ) 3 Eon Eoff 1 Switching loss Eon, Eoff (mJ) Switching loss 5 0.5 0.3 0.1 3 5 10 30 50 100 Gate resistance RG 15 IC 20 (A) Switching Loss Eon, Eoff – IC 10 Common emitter VCC = 600 V VGG = ±15 V IC = 15 A : Tc = 25°C : Tc = 125°C 10 Collector current Switching Loss Eon, Eoff – RG 10 5 3 1 Eoff (Ω) Eon 0.3 0.1 0 300 500 Common emitter VCC = 600 V VGG = ±15 V RG = 56 Ω : Tc = 25°C : Tc = 125°C 5 10 Collector current 4 15 IC 20 (A) 2002-10-29 GT15Q311 VCE, VGE – QG VCE Cies 300 100 Coes Common emitter VGE = 0 f = 1 MHz Tc = 25°C 30 10 1 3 Cres 10 30 100 Collector-emitter voltage 300 VCE 800 16 400 600 12 600 400 8 VCE = 200 V 4 200 0 0 1000 20 Common emitter RL = 40 Ω Tc = 25°C 40 80 (V) 120 Gate charge IF – VF QG (V) (V) 1000 Collector-emitter voltage (pF) Capacitance C 1000 Gate-emitter voltage VCE C – VCE 3000 0 200 160 (nC) trr, Irr – IF 50 100 1000 Common collector 25 20 Tc = 125°C −40 10 0 0 1 2 3 Forward voltage 4 VF trr Irr 10 : Tc = 25°C : Tc = 125°C 5 (V) Safe Operating Area 15 IF 10 20 (A) Reverse Bias SOA 100 50 IC max (pulsed)* (A) 1 ms* DC operation 3 10 ms* *: Single nonrepetitive pulse Tc = 25°C Curves must be 0.5 derated linearly with 0.3 increase in temperature. 1 0.1 1 3 10 IC 100 µs* 10 5 30 50 µs* IC max (continuous) 10 Collector current Collector current IC (A) 30 10 Forward current 100 50 100 Common collector di/dt = −200 A/µs VGE = 0 3 1 0 5 trr 30 Reverse recovery time Reverse recovery current Irr (A) Forward current IF 30 (ns) (A) VGE = 0 40 5 3 1 0.5 0.3 30 100 Collector-emitter voltage 300 VCE 1000 0.1 1 3000 (V) Tj ≤ 125°C VGE = ±15 V RG = 56 Ω 3 10 30 100 Collector-emitter voltage 5 300 VCE 1000 3000 (V) 2002-10-29 GT15Q311 rth (t) – tw 102 Transient thermal resistance rth (t) (°C/W) Tc = 25°C 101 Diode stage 100 IGBT stage 10 −1 10−2 10−3 10−4 −5 10 10−4 10−3 10−2 Pulse width 10−1 tw 100 101 102 (s) 6 2002-10-29 GT15Q311 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 7 2002-10-29