TOSHIBA TPC6201

TPC6201
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6201
HDD Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
·
Low drain-source ON resistance: RDS (ON) = 80 mΩ (typ.)
·
High forward transfer admittance: |Yfs| = 3.8 S (typ.)
·
Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
·
Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kW)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain
current
DC
(Note 1)
ID
2.5
Pulse
(Note 1)
IDP
10
PD (1)
0.9
Drain power Single-device operation
(Note 3a)
dissipation
(t = 5 s)
Single device value at
(Note 2a) dual operation (Note 3b)
A
W
PD (2)
0.76
JEITA
―
2-3T1B
Weight: 0.011 g (typ.)
PD (1)
0.4
PD (2)
0.31
Single pulse avalanche energy (Note 4)
EAS
1.0
mJ
Avalanche current
IAR
1.25
A
EAR
0.16
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
(Note 5)
―
TOSHIBA
Drain power Single-device operation
(Note 3a)
dissipation
(t = 5 s)
Single device value at
(Note 2b) dual operation (Note 3b)
Repetitive avalanche energy
JEDEC
W
Circuit Configuration
6
5
4
1
2
3
Thermal Characteristics
Marking (Note 6)
Characteristics
Symbol
Max
Single-device operation
Rth (ch-a) (2)
Thermal Resistance
(Note 3a)
(channel-to-ambient)
(t = 5 s)
(Note 2a) Single device value at
R
(2)
dual operation (Note 3b) th (ch-a)
Unit
139
°C/W
S4A
165
Single-device operation
Rth (ch-a) (2)
Thermal Resistance
(Note 3a)
(channel-to-ambient)
(t = 5 s)
(Note 2b) Single device value at
Rth (ch-a) (2)
dual operation (Note 3b)
310
°C/W
400
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page.
This transistor is an electrostatically sensitive device. Please handle it with caution.
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TPC6201
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
¾
¾
10
mA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
¾
¾
V (BR) DSX
ID = 10 mA, VGS = -20 V
15
¾
¾
Vth
VDS = 10 V, ID = 1 mA
1.3
¾
2.5
RDS (ON)
VGS = 4.5 V, ID = 1.3 A
¾
128
145
RDS (ON)
VGS = 10 V, ID = 1.3 A
¾
80
95
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1.3 A
1.25
3.8
¾
Input capacitance
Ciss
¾
170
¾
¾
25
¾
¾
40
¾
¾
2.4
¾
¾
8
¾
¾
2
¾
¾
11
¾
¾
4.7
¾
¾
3.4
¾
¾
1.3
¾
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Reverse transfer capacitance
Crss
Output capacitance
Coss
tr
Turn-ON time
ton
4.7 W
Switching time
Fall time
tf
Turn-OFF time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
ID = 1.3 A
VOUT
10 V
VGS
0V
RL = 11.5 W
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
V
V
mW
S
pF
ns
VDD ~
- 15 V
Duty <
= 1%, tw = 10 ms
VDD ~
- 24 V, VGS = 10 V,
ID = 2.5 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Pulse drain reverse current
Forward voltage (diode)
(Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
¾
¾
¾
10
A
¾
¾
-1.2
V
VDSF
IDR = 2.5 A, VGS = 0 V
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
FR-4
25.4 ´ 25.4 ´ 0.8
Unit: (mm)
FR-4
25.4 ´ 25.4 ´ 0.8
Unit: (mm)
(a)
(b)
Note 3: (a) Single-device operation; values of PD (1) and Rth (ch-a) (1) for a single device during single-device
operation
(b) Dual operation; values of PD (2) and Rth (ch-a) (2) for a single device during dual operation
Note 4: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 W, IAR = 1.25 A
Note 5: Repetitive rating; pulse width limited by maximum channel temperature
Note 6: Black round marking “·” locates on the left lower side of parts number marking “S4A” indicates terminal
No.1.
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TPC6201
ID – VDS
ID – VDS
5
10
Common source
Ta = 25°C
Pulse test
4
8
6
Common source
Ta = 25°C Pulse test
5
4.5
8
8
ID
(A)
4.5
(A)
3
Drain current
ID
Drain current
6
10
10
3.5
2
3
1
4
6
4
3.5
2
3
VGS = 2.5 V
0
0
0.1
0.2
0.3
Drain-source voltage
0.4
VDS
VGS = 2.5 V
0
0
0.5
1
(V)
2
Drain-source voltage
ID – VGS
(V)
Common source
VDS = 10 V
Pulse test
(V)
Common source
Ta = 25°C
Pulse test
0.8
VDS
Ta = -55°C
1
Drain-source voltage
Drain current
2
100°C
0.6
0.4
ID = 2.5 A
0.2
1.2 A
0.6 A
25°C
0
0
1
2
3
Gate-source voltage
4
VDS
0
0
5
2
(V)
4
VDS = 10 V
Pulse test
Ta = -55°C
5
Drain-source on resistance
RDS (ON) (mW)
(S)
Common source
25°C
100°C
3
0.3
0.5
1
Drain current
3
ID
8
VGS
10
(V)
RDS (ON) – ID
1000
1
0.1
6
Gate-source voltage
|Yfs| – ID
10
ïYfsï
VDS
5
1.0
(A)
ID
3
Forward transfer admittance
4
VDS – VGS
5
4
3
5
Common source
Ta = 25°C
Pulse test
300
VGS = 4.5 V
100
30
10
0.1
10
(A)
10 V
0.3
1
3
Drain current
3
10
ID
30
100
(A)
2002-01-17
TPC6201
RDS (ON) – Ta
IDR – VDS
100
250
Common source
Ta = 25°C
Pulse test
Common source
(A)
Drain reverse current IDR
Drain-source on resistance
RDS (ON) (mW)
Pulse test
200
ID = 2.5 A, 1.2 A, 0.6 A
150
VGS = 4.5 V
100
ID = 2.5 A, 1.2 A, 0.6 A
50
VGS = 10 V
0
-80
-40
0
40
120
80
Ambient temperature Ta
160
30
10
10 V
3
1
5V
1V
0.3
3V
0.1
0
-0.2
VGS = 0 V
-0.4
-0.6
-0.8
Drain-source voltage
(°C)
-1
VDS
-1.2
-1.4
(V)
Vth – Ta
Capacitance – VDS
1000
2.8
Gate threshold voltage Vth (V)
Common source
Ciss
100
Coss
30
Crss
10
10
Drain-source voltage
VDS
30
1.6
1.2
0.8
-80
100
(V)
Drain power dissipation
0.6
0.4
(3)
VDS
(V)
12 V
t=5s
(4)
0.2
0
0
25
50
75
100
120
80
160
Dynamic input/output characteristics
Drain-source voltage
(W)
(2)
PD
0.8
40
40
Device mounted on a glass-epoxy
board (a) (Note 2a)
(1) Single-device operation
(Note 3a)
(2) Dual operation (per device)
(Note 3b)
Device mounted on a glass-epoxy
board (b) (Note 2b)
(3) Single-device operation
(Note 3a)
(4) Dual operation
(per device) (Note 3b)
(1)
0
Ambient temperature Ta (°C)
PD – Ta
1
-40
125
150
175
6V
30
Ambient temperature Ta (°C)
16
12
VDS = 24 V
VDD = 24 V
20
8
12 V
10
4
VGS
6V
0
0
200
Common source
ID = 2.5 A
Ta = 25°C
Pulse test
(V)
3
2
2
4
6
8
VGS
Common source
3 VGS = 0 V
f = 1 MHz
Ta = 25°C
1
0.1
0.3
1
VDS = 10 V
ID = 1 mA
Pulse test
2.4
Gate-source voltage
Capacitance C
(pF)
300
0
10
Total gate charge Qg (nC)
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TPC6201
rth - tw
Transient thermal impedance
rth (°C/W)
1000
(4)
(3)
300
(2)
(1)
100
30
Device mounted on a glass-epoxy board (a) (Note 2a)
10
(1) Single-device operation (Note 3a)
(2) Single device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single device value at dual operation (Note 3b)
3
Single pulse
1
0.001
0.01
0.1
1
10
Pulse tw
100
1000
(S)
Safe operating area
100
Single device value at dual
operation (Note 3b)
30
Drain current
ID
(A)
10
ID max (pulse)*
1 ms*
3
1
0.3
0.1
0.03
0.01
0.003
*: Curves must be derated
linearly with increase in
temperature
0.001
0.01
0.03
0.1
0.3
VDSS
max
1
Drain-source voltage
3
VDS
10
30
100
(V)
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2002-01-17
TPC6201
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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